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1. 发明公开

EP1002331A1 PLASMA VAPOR DEPOSITION WITH COIL SPUTTERING 审中-公开
标题翻译：用蒸汽SPULENZERSTÄUBUNG等离子体相分离
公开(公告)号：EP1002331A1
公开(公告)日：2000-05-24
申请号：EP98938398.9
申请日：1998-08-06
申请人： APPLIED MATERIALS, INC.
发明人： HONG, Liubo
IPC分类号： H01J37/32 , H01J37/34
CPC分类号： H01J37/32082 , H01J37/3408
摘要： A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source. In order to place a deposition chamber of a physical vapor deposition apparatus in which metal or other material is sputtered from a target and a coil in condition to effect deposition of a layer consisting of the sputtered material on a substrate subsequent to deposition, in the apparatus, of a layer containing a reaction compound of the sputtered material, the chamber is filled with a non-reactive gas and a voltage is applied to sputter from the target and coil any reaction compound which has coated the target and coil during deposition of the layer containing the reaction compound of the sputtered metal.

2. 发明公开

EP0990251A2 CENTRAL COIL DESIGN FOR IONIZED METAL PLASMA DEPOSITION 失效
标题翻译：中央卷材涂料用于使用电离金属等离子体实现
公开(公告)号：EP0990251A2
公开(公告)日：2000-04-05
申请号：EP98922371.4
申请日：1998-05-13
申请人： Applied Materials, Inc.
发明人： HONG, Liubo , WANG, Hougong , YAO, Gongda , XU, Zheng
IPC分类号： H01J37/00
CPC分类号： H01J37/321 , H01J37/34 , H01J2237/3323
摘要： In a plasma generating apparatus, a coil is positioned between a target and a workpiece to inductively couple RF energy into a plasma so that the paths of a portion of the ionized deposition material are deflected from the center of the workpiece and toward the edges of the workpiece. As a consequence, it has been found that the uniformity of deposition may be improved. In the illustrated embodiment, the coil is a multi-turn coil formed in a generally planar spiral centered in the stream of deposition material.

3. 发明公开

EP1118094A1 METHOD AND APPARATUS FOR PRODUCING A UNIFORM DENSITY PLASMA ABOVE A SUBSTRATE 失效
标题翻译：方法和装置，生成等离子体密度均匀上方的衬底
公开(公告)号：EP1118094A1
公开(公告)日：2001-07-25
申请号：EP98922240.1
申请日：1998-05-13
申请人： Applied Materials, Inc.
发明人： TANAKA, Yoichiro , HONG, Liubo , WADA, Yuichi
IPC分类号： H01J37/32
CPC分类号： H01J37/321
摘要： An apparatus and method for processing a substrate in the presence of a plasma, the apparatus including: a chamber enclosing a region maintained at a low pressure; a substrate support disposed in the region and having a substantially horizontal substrate support surface for supporting a substrate; and a coil disposed in the chamber and for producing a radio frequency field within the chamber to create an ionizing plasma above the substrate support surface, the coil being disposed for maintaining a plasma having equipotential lines which extend substantially parallel to the upper surface of the substrate across substantially the entire upper surface of the substrate.

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