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1. 发明公开

EP1459353A2 SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING 审中-公开
标题翻译： SELBSTIONISIERTES和电感耦合等离子体溅射和再溅射
公开(公告)号：EP1459353A2
公开(公告)日：2004-09-22
申请号：EP02784777.1
申请日：2002-12-10
申请人： Applied Materials, Inc.
发明人： DING, Peijun , XU, Zheng , MOSELY, Roderick, C. , RENGARAJAN, Suraj , MAITY, Nirmalya , CARL, Daniel, A. , CHIN, Barry , SMITH, Paul, F. , ANGELO, Darryl , TOLIA, Anish , FU, Jianming , CHEN, Fusen , GOPALRAJA, Praburam , TANG, Xianmin , FORSTER, John, C.
IPC分类号： H01J37/34 , H01J37/32
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/358 , H01J37/321 , H01J37/3408 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76865 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.

2. 发明公开

EP1034566A1 DAMAGE-FREE SCULPTURED COATING DEPOSITION 审中-公开
标题翻译：破坏性涂法
公开(公告)号：EP1034566A1
公开(公告)日：2000-09-13
申请号：EP98956259.0
申请日：1998-10-26
申请人： Applied Materials, Inc.
发明人： CHIANG, Tony , YAO, Gongda , DING, Peijun , CHEN, Fusen , CHIN, Barry , KOHARA, Gene , XU, Zheng , ZHANG, Hong
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/165 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L21/76883
摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, said method comprising the steps of: a) applying a first position of a sculptured layer with sufficiently low substrate bias that a surface onto which said sculptured layer is applied is not eroded away or contaminated in an amount which is harmful to said semiconductor device performance or longevity; and b) applying a subsequent portion of said sculptured layer with sufficiently high substrate bias to sculpture a shape from said first portion, while depositing additional layer material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces and is especially helpful when the conductive layer is copper. In the application of a barrier layer, a first portion of barrier layer material is deposited on the substrate surface using standard sputtering techniques or using an ion deposition plasma, but in combination with sufficiently low substrate bias voltage (including at no applied substrate voltage) that the surfaces impacted by ions are not sputtered in an amount which is harmful to device performance or longevity. Subsequently, a second portion of barrier material is applied using ion deposition sputtering at increased substrate bias voltage which causes resputtering (sculpturing) of the first portion of barrier layer material, while enabling a more anisotropic deposition of newly depositing material. A conductive material, and particularly a copper seed layer applied to the feature may be accomplished using the same sculpturing technique as that described above with reference to the barrier layer.

3. 发明公开

EP0981832A1 RELIABILITY BARRIER INTEGRATION FOR CU METALLISATION 失效
标题翻译：可靠的屏障层对Cu金属化
公开(公告)号：EP0981832A1
公开(公告)日：2000-03-01
申请号：EP98926038.5
申请日：1998-05-13
申请人： Applied Materials, Inc.
发明人： CHEN, Fusen , CHEN, Liang-Yuh , MOSELY, Roderick, Craig , EIZENBERG, Moshe
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： H01L21/76804 , C25D5/02 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76877 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a process sequence and related hardware for filling a hole with copper. The sequence comprises first forming a reliable barrier layer in the hole to prevent diffusion of the copper into the dielectric layer through which the hole is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the bottom of the hole, depositing a second barrier, and then filling the hole with copper. An alternative sequence comprises depositing a first barrier layer over a blanket dielectric layer, forming a hole through both the barrier layer and the dielectric layer, depositing a generally conformal second barrier layer in the hole, removing the barrier layer from the bottom of the hole, and selectively filling the hole with copper.

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