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1. 发明公开

EP3167472A1 EXTREME ULTRAVIOLET CAPPING LAYER AND METHOD OF MANUFACTURING AND LITHOGRAPHY THEREOF 审中-公开
标题翻译：极紫外覆盖层及其制造和光刻方法
公开(公告)号：EP3167472A1
公开(公告)日：2017-05-17
申请号：EP15818360.8
申请日：2015-07-03
申请人： Applied Materials, Inc.
发明人： BEASLEY, Cara , HOFMANN, Ralf , FOAD, Majeed A. , BECKSTROM III, Rudy
IPC分类号： H01L21/027
CPC分类号： G02B5/0891 , C23C14/083 , C23C14/14 , C23C14/568 , C23C14/5853 , C23C14/5873 , C23C28/32 , C23C28/3455 , G02B1/14 , G02B5/0816 , G02B5/085 , G03F1/24 , G03F1/48 , G03F7/20 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062
摘要： A method of manufacture of an extreme ultraviolet reflective element includes: providing a substrate; forming a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer and a second reflective layer for forming a Bragg reflector; and forming a capping layer on and over the multilayer stack, the capping layer formed from titanium oxide, ruthenium oxide, niobium oxide, ruthenium tungsten, ruthenium molybdenum, or ruthenium niobium, and the capping layer for protecting the multilayer stack by reducing oxidation and mechanical erosion.
摘要翻译：一种制造极紫外反射元件的方法包括：提供基板; 在所述衬底上形成多层堆叠，所述多层堆叠包括多个反射层对，所述多个反射层对具有用于形成布拉格反射器的第一反射层和第二反射层; 以及在所述多层叠层之上和之上形成覆盖层，所述覆盖层由氧化钛，氧化钌，氧化铌，钌钨，钌钼或钌铌形成，并且所述覆盖层用于通过减少氧化和机械侵蚀。

2. 发明公开

EP2047502A2 NANOCRYSTAL FORMATION 审中-公开
标题翻译：纳米晶体形成
公开(公告)号：EP2047502A2
公开(公告)日：2009-04-15
申请号：EP07812513.5
申请日：2007-06-29
申请人： Applied Materials, Inc.
发明人： KRISHNA, Nety M. , HOFMANN, Ralf , SINGH, Kaushal K. , ARMSTRONG, Karl J.
IPC分类号： H01L21/28 , H01L29/76
CPC分类号： H01L21/28273 , H01L29/42332 , H01L29/7881
摘要： In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5×1012 cm-2, preferably, at least about 8×1012 cm-2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer. Some of the examples include 10, 50, 100, 200, or more bi-layers.
摘要翻译：在一个实施例中，提供了用于在衬底上形成金属纳米晶体材料的方法，其包括将衬底暴露于预处理工艺，在衬底上形成隧道电介质层，将衬底暴露于后处理工艺，形成金属纳米晶体层形成在隧道介电层上，并且在金属纳米晶层上形成介电覆盖层。该方法还提供了形成具有至少约5×10 12 cm -2，优选至少约8×10 12 cm -2的纳米晶体密度的金属纳米晶体层。在一个例子中，金属纳米晶层包含铂，钌或镍。在另一个实施方案中，提供了用于在基底上形成多层金属纳米晶体材料的方法，其包括形成多个双层，其中每个双层包含沉积在金属纳米晶体层上的中间介电层。一些例子包括10,50,100,200或更多的双层。

3. 发明公开

EP3167474A1 EXTREME ULTRAVIOLET REFLECTIVE ELEMENT WITH MULTILAYER STACK AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：具有多层堆叠的极紫外反射元件及其制造方法
公开(公告)号：EP3167474A1
公开(公告)日：2017-05-17
申请号：EP15819522.2
申请日：2015-07-03
申请人： Applied Materials, Inc.
发明人： HOFMANN, Ralf , HASSAN, Vinayak Vishwanath , BEASLEY, Cara , FOAD, Majeed A.
IPC分类号： H01L21/027
CPC分类号： G03F7/702 , C23C14/0605 , C23C14/0635 , C23C14/14 , C23C16/44 , G02B1/14 , G02B5/085 , G02B5/0891 , G03F1/24 , G03F1/48 , G03F1/52 , G03F7/70033 , G03F7/70316 , G03F7/70916 , G03F7/70958 , G21K1/062 , H01J37/32798 , H01J37/3429
摘要： An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
摘要翻译：一种制造极紫外反射元件的装置和方法，包括：基板; 在所述衬底上的多层堆叠，所述多层堆叠包括多个反射层对，所述多个反射层对具有由硅形成的第一反射层和由铌或碳化铌形成的用于形成布拉格反射器的第二反射层; 以及多层叠层之上和之上的覆盖层，用于通过减少氧化和机械侵蚀来保护多层叠层。

4. 发明公开

EP3167473A1 EXTREME ULTRAVIOLET MASK BLANK PRODUCTION SYSTEM WITH THIN ABSORBER AND MANUFACTURING SYSTEM THEREFOR 有权
标题翻译：系统与薄的吸收极紫外空白掩模制作与生产系统及其
公开(公告)号：EP3167473A1
公开(公告)日：2017-05-17
申请号：EP15819417.5
申请日：2015-07-08
申请人： Applied Materials, Inc.
发明人： HASSAN, Vinayak Vishwanath , FOAD, Majeed A. , BEASLEY, Cara , HOFMANN, Ralf
IPC分类号： H01L21/027
CPC分类号： G03F1/22 , C23C14/042 , C23C16/042 , C23C28/00 , C23C28/322 , C23C28/34 , C23C28/42 , C23C28/44 , G03F1/24 , G03F1/54 , G03F7/70033
摘要： An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80nm and less than 2% reflectivity.
摘要翻译：极紫外（EUV）掩模坯件的生产系统包括：真空室的基板处理用于产生真空; 在真空处理一个平台基板，用于在处理真空室中的基片加载超低膨胀基板输送; 和多个子腔室，通过处理平台，在EUV掩模形成基板访问的，包括：一多层堆叠，所述超低膨胀基板的上方形成，用于反射在极紫外（EUV）的光，并且在吸收层中，多层堆叠上方形成，在13.5 nm波长包括在吸收层吸收EUV光的厚度为小于80nm和小于2％的反射率。

5. 发明公开

EP3167476A1 EXTREME ULTRAVIOLET REFLECTIVE ELEMENT WITH AMORPHOUS LAYERS AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译：连同其主要产品为非层和方法极紫外反射元件
公开(公告)号：EP3167476A1
公开(公告)日：2017-05-17
申请号：EP15819695.6
申请日：2015-07-03
申请人： Applied Materials, Inc.
发明人： HASSAN, Vinayak Vishwanath , HOFMANN, Ralf , BEASLEY, Cara , FOAD, Majeed A.
IPC分类号： H01L21/027
CPC分类号： G02B5/0891 , C23C14/06 , C23C14/14 , C23C16/24 , C23C16/45525 , G02B5/0833 , G02B5/0875 , G03F7/7015 , G03F7/70316 , G03F7/70958 , G21K1/062 , G21K2201/067 , H05G2/008
摘要： An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
摘要翻译：极紫外反射元件及其制造方法包括：基板; 在衬底上的多层堆叠，所述多层堆叠包括具有由硅和具有预防性层分离下部非晶层和在上部非晶体层的第二反射层形成的第一反射层的反射层对多元化; 和上，并在通过减少氧化和机械侵蚀保护多层叠层的多层叠层覆盖层。

6. 发明公开

EP2550379A2 DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE 审中-公开
标题翻译：电介质沉积使用远程等离子体源
公开(公告)号：EP2550379A2
公开(公告)日：2013-01-30
申请号：EP11760073.4
申请日：2011-03-22
申请人： Applied Materials, Inc.
发明人： HOFMANN, Ralf , FOAD, Majeed, A.
IPC分类号： C23C14/34 , C23C14/50 , C23C14/35
CPC分类号： C23C14/3407 , C23C14/0036 , C23C14/06 , C23C14/354 , H01J37/32357 , H01J37/34 , H05H1/46 , H05H2001/4667
摘要： A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.

7. 发明授权

EP2494646B1 SHADOW MASK ALIGNMENT AND MANAGEMENT SYSTEM 有权
标题翻译：阴影遮罩对齐和管理系统
公开(公告)号：EP2494646B1
公开(公告)日：2017-12-06
申请号：EP10828765.7
申请日：2010-10-18
申请人： Applied Materials, Inc.
发明人： KWAK, Byung-Sung, Leo , BANGERT, Stefan , HOFMANN, Ralf , KOENIG, Michael
IPC分类号： H01M10/04 , H01M10/0562 , H01M6/18 , H01G9/025 , C23C14/04
CPC分类号： H01M6/40 , C23C14/042 , H01M4/02 , H01M4/13 , H01M4/139 , H01M4/5825 , H01M4/621 , H01M4/623 , H01M4/663 , H01M2004/028 , Y02E60/122 , Y10T29/49002 , Y10T29/5313
摘要： A magnetic handling assembly for thin-film processing of a substrate, a system and method for assembling and disassembling a shadow mask to cover a top of a workpiece for exposure to a processing condition. The assembly may include a magnetic handling carrier and a shadow mask disposed over, and magnetically coupled to, the magnetic handling carrier to cover a top of a workpiece that is to be disposed between the shadow mask and the magnetic handling carrier when exposed to a processing condition. A system includes a first chamber with a first support to hold the shadow mask, a second support to hold a handling carrier, and an alignment system to align the shadow mask a workpiece to be disposed between the carrier and shadow mask. The first and second supports are moveable relative to each other.

8. 发明公开

EP3234983A1 MONITORING SYSTEM FOR DEPOSITION AND METHOD OF OPERATION THEREOF 审中-公开
标题翻译：沉积监测系统及其操作方法
公开(公告)号：EP3234983A1
公开(公告)日：2017-10-25
申请号：EP15870910.5
申请日：2015-12-15
申请人： Applied Materials, Inc.
发明人： BUDIARTO, Edward W. , FOAD, Majeed A. , HOFMANN, Ralf , NOWAK, Thomas , EGAN, Todd , VAEZ-IRAVANI, Mehdi
IPC分类号： H01L21/027 , H01L21/66
CPC分类号： H01L21/67253 , G03F1/22 , G03F1/24 , H01L21/02631 , H01L21/0332 , H01L21/0337 , H01L21/2855 , H01L22/12 , H01L22/26
摘要： A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.
摘要翻译：一种监测和沉积控制系统及其操作方法，包括：用于在基底上沉积材料层的沉积室; 传感器阵列，用于在沉积期间监测材料层的沉积以改变材料层的层厚度; 以及用于基于沉积期间层厚度的变化来调整沉积参数的处理单元。

9. 发明公开

EP3167475A1 PLANARIZED EXTREME ULTRAVIOLET LITHOGRAPHY BLANK WITH ABSORBER AND MANUFACTURING SYSTEM THEREFOR 有权
标题翻译：平板电脑超紫外线照相机
公开(公告)号：EP3167475A1
公开(公告)日：2017-05-17
申请号：EP15819621.2
申请日：2015-07-08
申请人： Applied Materials, Inc.
发明人： HASSAN, Vinayak Vishwanath , FOAD, Majeed A. , BEASLEY, Cara , HOFMANN, Ralf
IPC分类号： H01L21/027
CPC分类号： G03F1/24 , C23C16/06 , C23C16/44 , G03F1/22 , G03F1/38
摘要： An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.
摘要翻译：极紫外（EUV）掩模坯生产系统包括：用于产生真空的基板处理真空室; 在真空中用于输送负载在基板处理真空室中的超低膨胀基板的基板处理平台; 以及用于形成EUV掩模坯料的由衬底处理平台接近的多个子室，包括：用于在超低膨胀衬底上方形成多层堆叠的第一子室，用于反射极紫外（EUV）光; 并且形成在多层叠层上方的用于吸收波长13.5nm的EUV光的双层吸收体的第二子室提供小于1.9％的反射率。

10. 发明公开

EP2494646A2 SHADOW MASK ALIGNMENT AND MANAGEMENT SYSTEM 有权
标题翻译： SYSTEM FOR孔掩模对准和管理
公开(公告)号：EP2494646A2
公开(公告)日：2012-09-05
申请号：EP10828765.7
申请日：2010-10-18
申请人： Applied Materials, Inc.
发明人： KWAK, Byung-Sung, Leo , BANGERT, Stefan , HOFMANN, Ralf , KOENIG, Michael
IPC分类号： H01M10/04 , H01M10/0562 , H01M6/18 , H01G9/025
CPC分类号： H01M6/40 , C23C14/042 , H01M4/02 , H01M4/13 , H01M4/139 , H01M4/5825 , H01M4/621 , H01M4/623 , H01M4/663 , H01M2004/028 , Y02E60/122 , Y10T29/49002 , Y10T29/5313
摘要： A magnetic handling assembly for thin-film processing of a substrate, a system and method for assembling and disassembling a shadow mask to cover a top of a workpiece for exposure to a processing condition. The assembly may include a magnetic handling carrier and a shadow mask disposed over, and magnetically coupled to, the magnetic handling carrier to cover a top of a workpiece that is to be disposed between the shadow mask and the magnetic handling carrier when exposed to a processing condition. A system includes a first chamber with a first support to hold the shadow mask, a second support to hold a handling carrier, and an alignment system to align the shadow mask a workpiece to be disposed between the carrier and shadow mask. The first and second supports are moveable relative to each other.

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