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1. 发明公开

EP1517357A3 Monitoring dimensions of features at different locations in the processing of substrates 审中-公开
标题翻译：处理的基材的过程中监测位于不同位置处的结构的尺寸
公开(公告)号：EP1517357A3
公开(公告)日：2009-04-15
申请号：EP04019809.5
申请日：2004-08-20
申请人： APPLIED MATERIALS, INC.
发明人： Barnes, Michael , Holland, John , Shan, Hongqing , Pu, Bryan Y. , Jain, Mohit , Sui, Zhifeng , Armacost, Michael D. , Hanson, Neil E. , Ma, Diana Xiaobing , Sinha, Ashok K. , Maydan, Dan
IPC分类号： H01J37/32
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67069
摘要： A substrate processing apparatus has a chamber having a substrate support (144), gas distributor (122), gas energizer (165), and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller (300) receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.

2. 发明授权

EP0421430B2 A plasma process, method and apparatus 有权
标题翻译：等离子体工艺，方法和装置
公开(公告)号：EP0421430B2
公开(公告)日：2003-12-10
申请号：EP90119065.2
申请日：1990-10-04
申请人： APPLIED MATERIALS, INC.
发明人： Mintz, Donald M. , Hanawa, Hiroji , Somekh, Sasson , Maydan, Dan
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32174 , H01J37/32082

3. 发明授权

EP0566220B1 Magnetic field enhanced plasma etch reactor 失效
标题翻译：等离子刻蚀与磁场增强
公开(公告)号：EP0566220B1
公开(公告)日：1997-04-02
申请号：EP93201991.2
申请日：1987-12-18
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/306 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862

4. 发明公开

EP0726593A1 A high power, plasma-based, reactive species generator 失效
标题翻译： Hochleistung-Reaktivespezieserzeuger auf der Basis von Plasma
公开(公告)号：EP0726593A1
公开(公告)日：1996-08-14
申请号：EP96101305.9
申请日：1996-01-31
申请人： APPLIED MATERIALS INC.
发明人： Shang, Quanyuan , Law, Kam S. , Maydan, Dan
IPC分类号： H01J37/32
CPC分类号： H01J37/32192 , H01J37/32357
摘要： A plasma-based generator (10) for use with a power source including a plasma tube (12) having a hollow tube body in which a plasma is generated by the power source; a first support structure (30, 32) supporting a downstream end of the plasma tube (12); and a second support structure (60, 70) holding an upstream end of the plasma tube (12), the second support structure (60, 70) connected to the first support structure (30, 32), the second support structure (60, 70) including an expansion joint (70) which changes its length to accommodate a lengthening and a shortening of the plasma tube (12) due to its thermal expansion and contraction when plasma processing is performed within the plasma tube (12).
摘要翻译：一种与电源一起使用的等离子体发生器（10），其包括具有中空管体的等离子体管（12），其中由电源产生等离子体; 支撑等离子体管（12）的下游端的第一支撑结构（30,32）; 以及保持等离子体管（12）的上游端的第二支撑结构（60,70），连接到第一支撑结构（30,32）的第二支撑结构（60,70），第二支撑结构（60， 70），其包括膨胀接头（70），所述膨胀接头（70）改变其长度以适应等离子体管（12）由于在等离子体管（12）内进行等离子体处理时由于其热膨胀和收缩而变长和缩短。

5. 发明授权

EP0441368B1 Method and device for removing excess material from a sputtering chamber 失效转让
标题翻译：用于去除多余的材料从一个溅射室的方法和装置
公开(公告)号：EP0441368B1
公开(公告)日：1996-05-08
申请号：EP91101670.7
申请日：1991-02-07
申请人： APPLIED MATERIALS INC.
发明人： Somekh, Sasson , Maydan, Dan
IPC分类号： C23C14/22 , C23C14/34 , C23C14/56
CPC分类号： H01J37/32862 , C23C14/22 , C23C14/564

6. 发明公开

EP0702392A2 Plasma reactor 失效
标题翻译：等离子反应器
公开(公告)号：EP0702392A2
公开(公告)日：1996-03-20
申请号：EP95305793.2
申请日：1995-08-18
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Mak, Steve S.Y. , Olgado, Donald , Yin, Gerald Z. , Driscoll, Timothy D. , Shieh, Brian , Papanu, James S.
IPC分类号： H01J37/32
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The disclosure relates to a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing (10), a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line (15), from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle (25) facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member (20a) surrounded by at least one annular member (35a) with a gap (25) therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明涉及一种用于将气体喷射到等离子体反应器真空室中的气体喷射装置，所述真空室具有腔室壳体（10），保持待处理的工件的基座，用于将RF能量施加到腔室中的装置，所述气体喷射装置具有气体包含在气体中的蚀刻剂物质的供应装置，腔室壳体中的开口，从腔室壳体中的供应到开口的气体供给管线（15）以及腔室壳体中的开口附近的气体分配装置，气体供给装置装置具有至少一个面向腔室内部的狭缝喷嘴（25）。在优选实施例中，气体分配装置包括由至少一个环形部件（35a）围绕的盘形部件（20a），其间具有间隙（25），包括狭缝喷嘴，盘形部件和环形部件阻止气体流过开口在腔室内。优选地，气体分配设备的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配设备的每个构件包括陶瓷，石英，蓝宝石，聚酰亚胺或阳极氧化铝中的一种，并且气体供给管线包括不锈钢。优选地，在组装气体分配设备之前，每个构件都具有其表面抛光。

7. 发明公开

EP0630990A3 Method of limiting sticking of body to a susceptor in a deposition treatment 失效
标题翻译：限制上在沉积处理的支撑体的粘附的方法。
公开(公告)号：EP0630990A3
公开(公告)日：1996-01-03
申请号：EP94109548.1
申请日：1994-06-21
申请人： APPLIED MATERIALS, INC.
发明人： Robertson, Robert , Kollrack, Marc Michael , Lee, Angela T. , Law, Kam , Maydan, Dan
IPC分类号： C23C16/44 , C23C16/50 , C23C16/56 , B05D3/06 , B05D3/04
CPC分类号： C23C16/56 , C23C16/509
摘要： A method of limiting sticking of a body (38, substrate) to a susceptor (18) after the body (38) has been coated with a layer in a deposition chamber (12) by plasma chemical vapor deposition includes subjecting the coated body (38) to a plasma of an inactive gas, e.g., hydrogen, nitrogen, argon or ammonia, which does not adversely affect the coating and does not add additional layers to the body (38). After the coated body (38) is subjected to the plasma of the inactive gas, the body (38) is separated from the susceptor (18).

8. 发明公开

EP0684630A2 Workpiece transport system and method of transporting workpiece in same 失效
标题翻译： Einrichtung zum Transportieren vonWerkstückenundzugehörigesTransportierungsverfahren。
公开(公告)号：EP0684630A2
公开(公告)日：1995-11-29
申请号：EP95112690.3
申请日：1990-05-18
申请人： APPLIED MATERIALS, INC.
发明人： Tepman, Avi , Grunes, Howard , Somekh, Sasson , Maydan, Dan
IPC分类号： H01L21/00
CPC分类号： H01L21/67167 , H01L21/67184 , H01L21/67742
摘要： A workpiece transport system, comprises first (24) and second (28) vacuum chambers and a pair of passages (30,32) interconnecting said first and second vacuum chambers and providing selectable isolation of, and separate workpiece transport paths between, said first and second chambers.
摘要翻译：工件输送系统包括第一（24）和第二（28）真空室和一对通道（30,32），其将所述第一和第二真空室互连，并提供所述第一和第二真空室之间的可选择隔离和分离工件传输路径第二室。

9. 发明公开

EP0472941A3 VHF/UHF plasma process for use in forming integrated circuit structures on semiconductor wafers 失效
标题翻译：用于在半导体晶片上形成集成电路结构的VHF / UHF等离子体工艺
公开(公告)号：EP0472941A3
公开(公告)日：1995-04-05
申请号：EP91112905.4
申请日：1991-07-31
申请人： APPLIED MATERIALS, INC.
发明人： Collins, Kenneth S. , Roderick, Craig A. , Yang, Chan-Lon , Wang, David N. K. , Maydan, Dan
IPC分类号： C23C16/50 , H01J37/32 , C23C16/34 , C23C16/40
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32091
摘要： A method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm. By carrying out plasma-assisted processes using plasma operated within a range of from about 50 to about 800 MHz, the electrode sheath voltages are maintained sufficiently low, so as to avoid damage to structures on the wafer, yet sufficiently high to preferably permit initiation of the processes without the need for supplemental power sources. Operating in this frequency range may also result in reduction or elimination of microloading effects.
摘要翻译：公开了一种使用等离子体辅助工艺在半导体晶片上制造集成电路结构的方法，其中等离子体由VHF / UHF电源以约50至约800MHz的频率范围产生。低压等离子体辅助蚀刻或沉积工艺，即工艺可以在不超过约500毫托的压力范围内进行; 阳极与阴极面积之比为约2:1至约20:1，电极间距约5cm。到约30厘米。高压等离子体辅助蚀刻或沉积工艺，即工艺可以在超过500毫托至50托或更高的压力下进行; 阳极与阴极的间距小于5厘米。通过使用在大约50MHz至大约800MHz范围内操作的等离子体进行等离子体辅助工艺，电极护套电压保持足够低，以避免损坏晶片上的结构，但仍足够高以优选允许开始这些过程不需要补充电源。在此频率范围内操作也可能导致微负载效应的减少或消除。

10. 发明授权

EP0339580B1 A vacuum processing reactor 失效
标题翻译：的真空处理反应器中。
公开(公告)号：EP0339580B1
公开(公告)日：1995-02-22
申请号：EP89107484.1
申请日：1989-04-25
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/00 , C23F4/00
CPC分类号： H01L21/67069 , H01J37/32431 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862

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