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1. 发明公开

EP0566220A2 Magnetic field enhanced plasma etch reactor 失效
标题翻译： PlasmaätzvorrichtungmitMagnetfeldverstärkung。
公开(公告)号：EP0566220A2
公开(公告)日：1993-10-20
申请号：EP93201991.2
申请日：1987-12-18
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/306 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强型单晶片等离子体蚀刻反应器（60）。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑基座/阴极（70,72）; 以及包括延伸穿过基座的晶片提升销（79）和晶片夹紧环（78）的整体晶片更换机构（74）。提升销和夹紧环通过单轴提升机构（140）垂直移动，以从合作的外部机器人叶片（76）接收晶片，将晶片夹紧到基座并将晶片返回到叶片。电极冷却结合了用于电极（70）的主体的水冷却和晶片和电极之间的热导率增强气体界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。气体馈通装置（114,175,176）将冷却气体施加到RF供电的电极（72），而不会破坏气体。为诸如夹紧环和气体歧管的表面提供诸如石英的材料的保护涂层/层（81,83）。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入原位自清洁能力。

2. 发明公开

EP0566220A3 Magnetic field enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：EP0566220A3
公开(公告)日：1993-10-27
申请号：EP93201991.2
申请日：1987-12-18
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/306 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.

3. 发明授权

EP0566220B1 Magnetic field enhanced plasma etch reactor 失效
标题翻译：等离子刻蚀与磁场增强
公开(公告)号：EP0566220B1
公开(公告)日：1997-04-02
申请号：EP93201991.2
申请日：1987-12-18
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/306 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862

4. 发明授权

EP0339580B1 A vacuum processing reactor 失效
标题翻译：的真空处理反应器中。
公开(公告)号：EP0339580B1
公开(公告)日：1995-02-22
申请号：EP89107484.1
申请日：1989-04-25
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/00 , C23F4/00
CPC分类号： H01L21/67069 , H01J37/32431 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862

5. 发明授权

EP0272142B1 Magnetic field enhanced plasma etch reactor 失效
标题翻译：等离子刻蚀与磁场增强。
公开(公告)号：EP0272142B1
公开(公告)日：1994-09-07
申请号：EP87311195.9
申请日：1987-12-18
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/306 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862

6. 发明公开

EP0339580A2 A vacuum processing reactor 失效
标题翻译： VAKUUM-Bearbeitungsreaktor。
公开(公告)号：EP0339580A2
公开(公告)日：1989-11-02
申请号：EP89107484.1
申请日：1989-04-25
申请人： APPLIED MATERIALS INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/00 , C23F4/00
CPC分类号： H01L21/67069 , H01J37/32431 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强真空单晶片等离子体蚀刻反应器（60）。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 包括加热的阳极表面（66I，67I）（壁和气体歧管）和冷却的晶片支撑阴极（72）的温度控制反应器表面和包括延伸穿过基座（72）的晶片升降销（79）的整体晶片交换机构）和晶片夹环（78）。提升销（79）和夹紧环（78）通过单轴提升机构（140）垂直移动，以从配合的外部机器人叶片（76）接收晶片（75），将晶片（75）夹紧到基座（72）并将晶片（75）返回到叶片（76）。电极冷却结合用于电极主体（128）的水冷（170,172,174）和晶片（75）与电极（72）之间的热导率增强气体平行弓形界面，用于保持晶片表面冷却尽管施加到电极的高功率密度。气体馈通装置（175,176,178,180）将冷却气体施加到RF供电的电极（72），而不会破坏气体。为诸如夹紧环（78）和气体歧管（80）的表面提供诸如石英的材料的保护涂层/层（811,83）。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器（60），其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入现场自清洁能力。

7. 发明公开

EP0272142A2 Magnetic field enhanced plasma etch reactor 失效
标题翻译： PlasmaätzvorrichtungmitMagnetfeldverstärkung。
公开(公告)号：EP0272142A2
公开(公告)日：1988-06-22
申请号：EP87311195.9
申请日：1987-12-18
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/306 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.
摘要翻译：公开了一种磁场增强型单晶片等离子体蚀刻反应器。反应器的特征包括用于在高压下提供高速均匀蚀刻的电控步进磁场; 温度控制的反应器表面包括加热的阳极表面（壁和气体歧管）和冷却的晶片支撑基座/阴极（70,72）; 以及包括延伸穿过基座的晶片提升销（79）和晶片夹紧环（78）的整体晶片交换机构。提升销和夹紧环通过单轴提升机构（140）垂直移动，以从合作的外部机器人叶片（76）接收晶片，将晶片夹紧到基座并将晶片返回到叶片。电极冷却结合了用于电极（70）的主体的水冷却和晶片和电极之间的热导率增强气体界面，用于保持晶片表面冷却，尽管施加到电极的高功率密度。气体供给装置（114,176）将冷却气体施加到RF供电的电极（72），而不会破坏气体。为诸如夹紧环和气体歧管的表面提供诸如石英的材料的保护涂层/层（81,83）。这些特征的组合提供了广泛的压力方案，高蚀刻速率，高通量单晶硅蚀刻器，其在高气体压力下提供均匀性，方向性和选择性，干净地操作并且并入原位自清洁能力。

8. 发明公开

EP0339580A3 A vacuum processing reactor 失效
标题翻译：真空加工反应器
公开(公告)号：EP0339580A3
公开(公告)日：1990-11-22
申请号：EP89107484.1
申请日：1989-04-25
申请人： APPLIED MATERIALS INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/00 , C23F4/00
CPC分类号： H01L21/67069 , H01J37/32431 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

9. 发明公开

EP0272142A3 Magnetic field enhanced plasma etch reactor 失效
标题翻译：磁场增强等离子体蚀刻反应器
公开(公告)号：EP0272142A3
公开(公告)日：1990-09-05
申请号：EP87311195.9
申请日：1987-12-18
申请人： APPLIED MATERIALS, INC.
发明人： Cheng, David , Maydan, Dan , Somekh, Sasson , Stalder, Kenneth R. , Andrews, Dana L. , Chang, Mei , White, John M. , Wong, Jerry Yuen Kui , Zeitlin, Vladimir J. , Wang, David Nin-Kou
IPC分类号： H01J37/32 , H01L21/306 , C23C16/50
CPC分类号： H01L21/67069 , H01J37/32477 , H01J37/32623 , H01J37/32743 , H01J37/32788 , H01J37/32862
摘要： A magnetic field enhanced single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and gas manifold) and a cooled wafer supporting pedestal/cathode (70,72); and a unitary wafer exchange mechanism (74) comprising wafer lift pins (79) which extend through the pedestal and a wafer clamp ring (78). The lift pins and clamp ring are moved vertically by a one-axis lift mechanism (140) to accept the wafer from a co-operating external robot blade (76), clamp the wafer to the pedestal and return the wafer to the blade. The electrode cooling combines water cooling for the body of the electrode (70) and a thermal conductivity-enhancing gas interface between the wafer and electrode for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (114, 175, 176) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (81,83) of materials such as quartz are provided for surfaces such as the clamp ring and gas manifold. The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher wich provides uniformity, directionality and selectivity at high gas pressure, operates cleanly and incorporates in-situ self-cleaning capability.

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