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1. 发明公开

EP0838841A3 Inductively coupled parallel-plate plasma reactor with a conical dome 失效
标题翻译：平板电脑平板电脑Koppelter
公开(公告)号：EP0838841A3
公开(公告)日：1998-12-30
申请号：EP97307921.3
申请日：1997-10-07
申请人： Applied Materials, Inc.
发明人： Schneider, Gerhard , Shel, Viktor , Nguyen, Andrew , Wu, Robert W. , Yin, Gerald Z.
IPC分类号： H01J37/32 , H05H1/46 , C23C16/50
CPC分类号： H01J37/321
摘要： A plasma reactor appropriate for fabrication, especially etching, of semiconductor integrated circuits and similar processes in which the chamber has a top comprising a truncated conical dome (130) and, preferably, a counter electrode disposed at the top ofthe conical dome. An RF coil (180) is wrapped around the conical dome to inductively couple RF energy into a plasma within the chamber dome. The dome temperature can be controlled in a number of ways. A heat sink (138) can be attached to the outside rim ofthe dome. A rigid conical thermal control sheath (212) can be fit to the outside of the dome, and any differential thermal expansion between the two is accommodated by the conical geometry, thus assuring good thermal contact. The rigid thermal control sheath can include resistive heating, fluid cooling, or both. Alternatively, a flexible resistive heater (270) can be wrapped around the dome inside the RF coil (262). The resistive heater includes a heater wire wound in a serpentine path that has straight portions overlying and perpendicular to the RF coil but has bends located away from the RF coil. The path prevents the heater wire from shorting the azimuthal electric field induced by the RF coil and also acts as a Faraday shield preventing capacitive coupling from the coil into the chamber plasma.
摘要翻译：适用于半导体集成电路的制造，特别是蚀刻的等离子体反应器和类似的工艺，其中腔室具有顶部，其包括截顶圆锥形圆顶（130），优选地，设置在锥形圆顶顶部的对置电极。 RF线圈（180）围绕圆锥形圆顶包裹，以将RF能量感应耦合到腔室内的等离子体中。圆顶温度可以通过多种方式进行控制。散热器（138）可以附接到圆顶的外边缘。刚性圆锥形热控护套（212）可以配合到圆顶的外部，并且两者之间的任何差别的热膨胀都被锥形几何形状所容纳，从而确保良好的热接触。刚性热控制护套可以包括电阻加热，流体冷却或两者。或者，柔性电阻加热器（270）可缠绕在RF线圈（262）内的圆顶周围。电阻加热器包括缠绕在蜿蜒路径中的加热线，其具有覆盖并垂直于RF线圈的直线部分，但具有远离RF线圈的弯曲。该路径防止加热器线短路由RF线圈引起的方位电场，并且还用作法拉第屏蔽，防止从线圈到室等离子体的电容耦合。

2. 发明公开

EP0702392A2 Plasma reactor 失效
标题翻译：等离子反应器
公开(公告)号：EP0702392A2
公开(公告)日：1996-03-20
申请号：EP95305793.2
申请日：1995-08-18
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Mak, Steve S.Y. , Olgado, Donald , Yin, Gerald Z. , Driscoll, Timothy D. , Shieh, Brian , Papanu, James S.
IPC分类号： H01J37/32
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The disclosure relates to a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing (10), a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line (15), from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle (25) facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member (20a) surrounded by at least one annular member (35a) with a gap (25) therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明涉及一种用于将气体喷射到等离子体反应器真空室中的气体喷射装置，所述真空室具有腔室壳体（10），保持待处理的工件的基座，用于将RF能量施加到腔室中的装置，所述气体喷射装置具有气体包含在气体中的蚀刻剂物质的供应装置，腔室壳体中的开口，从腔室壳体中的供应到开口的气体供给管线（15）以及腔室壳体中的开口附近的气体分配装置，气体供给装置装置具有至少一个面向腔室内部的狭缝喷嘴（25）。在优选实施例中，气体分配装置包括由至少一个环形部件（35a）围绕的盘形部件（20a），其间具有间隙（25），包括狭缝喷嘴，盘形部件和环形部件阻止气体流过开口在腔室内。优选地，气体分配设备的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配设备的每个构件包括陶瓷，石英，蓝宝石，聚酰亚胺或阳极氧化铝中的一种，并且气体供给管线包括不锈钢。优选地，在组装气体分配设备之前，每个构件都具有其表面抛光。

3. 发明授权

EP0702391B1 Etch processing and plasma reactor for performing same 失效
标题翻译：用于执行相同的蚀刻和等离子体反应器
公开(公告)号：EP0702391B1
公开(公告)日：1999-12-08
申请号：EP95114046.6
申请日：1995-09-07
申请人： APPLIED MATERIALS, INC.
发明人： Xiaobing Ma, Diana , Yin, Gerald Z. , Hanawa, Hiroji
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01L21/32136

4. 发明公开

EP0898299A1 Compartmentalized substrate processing chamber 失效
标题翻译： Unterteilte Substrat Behandlungskammer
公开(公告)号：EP0898299A1
公开(公告)日：1999-02-24
申请号：EP98113358.0
申请日：1995-08-21
申请人： Applied Materials, Inc.
发明人： Tepman, Avi , Yin, Gerald Z. , Olgado, Donald
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： The invention is related to an apparatus for processing substrates, comprising a first compartment (12) for maintaining a substrate processing environment therein, the first compartment (12) including a base (20); a second compartment (14) having a substrate support member (18, 63, 64) therein; a transfer chamber (204) connected to the second compartment (14) through a slit passage (6) and having a slit passage door to seal the slit passage (6); and an aperture (16) through a portion of the base (20) between the first compartment (12) and the second compartment (14), the aperture in the base (20) being selectively sealed by the substrate support member (18, 63, 64) to isolate the process environment in the first compartment (12) above the base (20). The first compartment (12) including the base (20) is removable and replacable with a additional first compartment (12) including an additional base (20).
摘要翻译：本发明涉及一种用于处理衬底的装置，包括用于维持其中的衬底处理环境的第一隔间（12），所述第一隔室（12）包括基座（20）; 第二隔室（14），其中具有基板支撑构件（18,63,64）; 传送室（204），其通过狭缝通道（6）连接到第二隔室（14），并具有狭缝通道门以密封狭缝通道（6）; 以及通过所述基座（20）的在所述第一隔间（12）和所述第二隔室（14）之间的一部分的孔（16），所述基座（20）中的孔被所述基板支撑构件（18,63）选择性地密封，64）隔离在基座（20）上方的第一隔室（12）中的处理环境。包括基座（20）的第一隔室（12）是可移除的，并且可替换地包括附加的第一隔室（12），其包括附加基座（20）。

5. 发明授权

EP0702392B1 Plasma reactor 失效
标题翻译：等离子体反应器
公开(公告)号：EP0702392B1
公开(公告)日：2000-10-04
申请号：EP95305793.2
申请日：1995-08-18
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Mak, Steve S.Y. , Olgado, Donald , Yin, Gerald Z. , Driscoll, Timothy D. , Shieh, Brian , Papanu, James S.
IPC分类号： H01J37/32 , C23C16/44
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449

6. 发明公开

EP0838841A2 Inductively coupled parallel-plate plasma reactor with a conical dome 失效
标题翻译：具有圆锥形罩的电感耦合平行板等离子体反应器
公开(公告)号：EP0838841A2
公开(公告)日：1998-04-29
申请号：EP97307921.3
申请日：1997-10-07
申请人： Applied Materials, Inc.
发明人： Schneider, Gerhard , Shel, Viktor , Nguyen, Andrew , Wu, Robert W. , Yin, Gerald Z.
IPC分类号： H01J37/32 , H05H1/46 , C23C16/50
CPC分类号： H01J37/321
摘要： A plasma reactor appropriate for fabrication, especially etching, of semiconductor integrated circuits and similar processes in which the chamber has a top comprising a truncated conical dome (130) and, preferably, a counter electrode disposed at the top ofthe conical dome. An RF coil (180) is wrapped around the conical dome to inductively couple RF energy into a plasma within the chamber dome. The dome temperature can be controlled in a number of ways. A heat sink (138) can be attached to the outside rim ofthe dome. A rigid conical thermal control sheath (212) can be fit to the outside of the dome, and any differential thermal expansion between the two is accommodated by the conical geometry, thus assuring good thermal contact. The rigid thermal control sheath can include resistive heating, fluid cooling, or both. Alternatively, a flexible resistive heater (270) can be wrapped around the dome inside the RF coil (262). The resistive heater includes a heater wire wound in a serpentine path that has straight portions overlying and perpendicular to the RF coil but has bends located away from the RF coil. The path prevents the heater wire from shorting the azimuthal electric field induced by the RF coil and also acts as a Faraday shield preventing capacitive coupling from the coil into the chamber plasma.
摘要翻译：一种等离子体反应器，适用于半导体集成电路和类似工艺的制造，特别是蚀刻，其中腔室具有顶部，该顶部包括截顶锥形穹顶（130），并且优选地，设置在圆锥顶部的顶部处的反电极。 RF线圈（180）缠绕在圆锥形穹顶周围以将RF能量感应耦合到腔室穹顶内的等离子体中。圆顶温度可以通过多种方式进行控制。散热器（138）可以连接到圆顶的外边缘。刚性圆锥形热控制护套（212）可以安装到圆顶的外侧，并且两者之间的任何不同的热膨胀由锥形几何形状调节，从而确保良好的热接触。刚性热控制护套可以包括电阻加热，流体冷却或两者。或者，柔性电阻加热器（270）可缠绕在RF线圈（262）内的圆顶周围。电阻加热器包括缠绕在蜿蜒路径中的加热器线，其具有覆盖并垂直于RF线圈但具有远离RF线圈的弯曲的直线部分。该路径防止加热器线短路由RF线圈感应的方位角电场，并且还充当防止来自线圈的电容耦合进入室等离子体的法拉第屏蔽。

7. 发明公开

EP0821397A2 Silicon carbide composite article particularly useful for plasma reactors 失效
标题翻译： Siliziumkarbid-Verbundkörper，insbesondere zur Anwendung in Plasmareaktoren
公开(公告)号：EP0821397A2
公开(公告)日：1998-01-28
申请号：EP97305353.1
申请日：1997-07-17
申请人： Applied Materials, Inc.
发明人： Lu, Hao A. , Han, Nianci , Yin, Gerald Z. , Wu, Robert W.
IPC分类号： H01J37/32
CPC分类号： H01J37/32467 , H01J37/3255 , Y10S156/914
摘要： A composite silicon carbide article and its method of making in which a surface layer or film of silicon carbide is deposited, for example by chemical vapor deposition (CVD), over a free standing silicon carbide substrate, as is formed by bulk methods such as sintering and hot pressing. The article is advantageously used in a plasma reactor, especially an oxide etcher for semiconductor fabrication, and may be any of several parts including the chamber wall, chamber roof, or collar around the wafer. The bulk SiC provides an inexpensive and strong support structure of perhaps a complex shape while the CVD SiC film has advantages for plasma processing and may be tailored to particular uses. The composite SiC structure is particularly useful in that the electrical conductivities of the bulk SiC and film SiC may be separately controlled so as to provide, among many possibilities, a grounding plane, a window for RF electromagnetic radiation, or both. The ultra-high purity achieved in CVD silicon carbide also benefits the control of micro-contamination inside the reactor chamber, a key factor for increased device yield.
摘要翻译：复合碳化硅制品及其制备方法，其中例如通过化学气相沉积（CVD）沉积碳化硅的表面层或膜，在独立的碳化硅衬底上沉积，如通过本体方法如烧结形成的和热压。该制品有利地用于等离子体反应器，特别是用于半导体制造的氧化物蚀刻器，并且可以是几个部分中的任何一个，包括围绕晶片的室壁，室顶部或套环。散装SiC提供了可能是复杂形状的便宜且坚固的支撑结构，而CVD SiC膜具有用于等离子体处理的优点，并且可以针对特定用途进行调整。复合SiC结构特别有用，因为本体SiC和膜SiC的电导率可以单独控制，以便在许多可能性中提供接地平面，RF电磁辐射的窗口或两者。在CVD碳化硅中实现的超高纯度也有利于控制反应室内的微污染，这是提高器件产量的关键因素。

8. 发明公开

EP0788138A3 Plasma reactors for processing substrates 失效
标题翻译：等离子体反应器的底物的治疗
公开(公告)号：EP0788138A3
公开(公告)日：1998-01-07
申请号：EP97300669.5
申请日：1997-02-03
申请人： APPLIED MATERIALS, INC.
发明人： Hanawa, Hiroji , Yin, Gerald Z. , Ma, Diana M. , Salzman, Philip M. , Loewenhardt, Peter K. , Zhao, Allen
IPC分类号： H01J37/32
CPC分类号： H01J37/321
摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall (10) and a ceiling (12), a wafer pedestal (14) for supporting the wafer (16) in the chamber, an RF power source (28), apparatus (24) for introducing a processing gas into the reactor chamber, and a coil inductor (42) adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section (44c) facing a portion of the side wall and including a bottom winding (44b) and a top winding (42a), the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section (46) extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling. The present invention adheres to an optimised coil-dome geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.

9. 发明公开

EP0788138A2 Plasma reactors for processing substrates 失效
标题翻译： Plasmareaktorenfürdie Behandlung von Substraten
公开(公告)号：EP0788138A2
公开(公告)日：1997-08-06
申请号：EP97300669.5
申请日：1997-02-03
申请人： APPLIED MATERIALS, INC.
发明人： Hanawa, Hiroji , Yin, Gerald Z. , Ma, Diana M. , Salzman, Philip M. , Loewenhardt, Peter K. , Zhao, Allen
IPC分类号： H01J37/32
CPC分类号： H01J37/321
摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall (10) and a ceiling (12), a wafer pedestal (14) for supporting the wafer (16) in the chamber, an RF power source (28), apparatus (24) for introducing a processing gas into the reactor chamber, and a coil inductor (42) adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section (44c) facing a portion of the side wall and including a bottom winding (44b) and a top winding (42a), the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section (46) extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling. The present invention adheres to an optimised coil-dome geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.
摘要翻译：用于处理半导体晶片的电感耦合RF等离子体反应器包括具有侧壁（10）和顶板（12）的反应室，用于将晶片（16）支撑在腔室中的晶片基座（14），RF电源 28），用于将处理气体引入反应室的设备（24）和与所述反应室相邻的线圈电感器（42），所述线圈电感器（42）与所述RF电源连接，所述线圈电感器包括：（a）并且包括底部绕组（44b）和顶部绕组（42a），所述顶部绕组的高度至少对应于所述天花板的顶部高度，以及（b）顶部部分（46）从侧部的顶部绕组径向向内延伸，以便覆盖至少大部分天花板。本发明遵循优化的线圈 - 圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶部高度范围和相对于圆顶顶点的特定晶片位置范围。

10. 发明公开

EP0702391A2 Etch processing and plasma reactor for performing same 失效
标题翻译：蚀刻处理和等离子体反应器
公开(公告)号：EP0702391A2
公开(公告)日：1996-03-20
申请号：EP95114046.6
申请日：1995-09-07
申请人： APPLIED MATERIALS, INC.
发明人： Xiaobing Ma, Diana , Yin, Gerald Z. , Hanawa, Hiroji
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01L21/32136
摘要： The plasma source power frequency in a plasma etch reactor is reduced to a low RF frequency such as about 2 MHz. It is a discovery of this invention that at this low frequency, capacitive coupling from the plasma power source is reduced, and the plasma source power level may be increased beyond 750 Watts to reduce capacitive coupling and provide a high density inductively coupled plasma without appreciably increasing the ion bombardment energy. Moreover, under these conditions the etchant (e.g., chlorine) concentration in the plasma may be increased to about 80 percent without decreasing etch uniformity to provide a very high metal alloy etch rate with complete residue removal, no profile microloading, and no etch rate microloading, the process being applicable over a wide window of metal alloy compositions.
摘要翻译：等离子体蚀刻反应器中的等离子体源功率频率降低至诸如约2MHz的低RF频率。本发明的发现是，在这个低频下，来自等离子体电源的电容耦合减少，并且等离子体源功率水平可以增加超过750瓦，以减少电容耦合并提供高密度电感耦合等离子体而不明显增加离子轰击能量。此外，在这些条件下，等离子体中的蚀刻剂（例如，氯）浓度可增加至约80％而不降低蚀刻均匀性以提供非常高的金属合金蚀刻速率以及完全的残余物去除，无轮廓微负载，且无蚀刻速率微负载该方法适用于金属合金组合物的宽窗口。

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