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1. 发明公开

EP0782172A3 Plasma processing systems 失效
标题翻译： Plasmabearbeitungsvorrichtungen
公开(公告)号：EP0782172A3
公开(公告)日：1997-10-08
申请号：EP96308504.8
申请日：1996-11-25
申请人： APPLIED MATERIALS, INC.
发明人： Forster, John , Chen, Aihua (Steve) , Grunes, Howard , Lowrance, Robert B. , Hoffmann, Ralf , Xu, Zheng , Dorleans, Fernand
IPC分类号： H01J37/32
CPC分类号： H01J37/32477 , H01J37/321 , Y10S156/916
摘要： A coil shield assembly (48) for an RF field coil (34) in a plasma processing system includes a first shield (50) positioned inside the coil. The first shield has a central opening substantially surrounding a central space of a processing chamber in which the plasma is maintained. At least one slot (52) is formed in the first shield and extends therethrough. A barrier (54) is positioned between the first shield and the coil and spaced apart from the first shield near the at least one slot. The slot permits an RF signal from the coil to couple with the plasma, and the first shield and the barrier are structured and arranged to prevent plasma ions or sputtered material from bombarding the coil by a direct path from the central space and through the at least one slot.

2. 发明公开

EP0774886A1 Method and apparatus for generating a plasma 失效
标题翻译： Verfahren und Vorrichtung zur Plasmaerzeugung
公开(公告)号：EP0774886A1
公开(公告)日：1997-05-21
申请号：EP96308251.6
申请日：1996-11-14
申请人： APPLIED MATERIALS, INC.
发明人： Raaijmakers, Ivo , Stimson, Bradley O. , Forster, John
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32477
摘要： A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma in a vacuum chamber (100). In one embodiment, first and second antenna coils (104, 106) are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area by a distance (2). A current is generated in the first and second antenna coils through amplifiers and matching networks (102, 108; 106, 112) and a single RF generator (114). A phase shift regulating network (116) establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield (118) is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.
摘要翻译：一种用于通过在真空室（100）中将电磁能量感应耦合到等离子体中来产生等离子体的方法和装置。在一个实施例中，第一和第二天线线圈（104,106）围绕等离子体容纳区域的圆周设置。第一和第二天线线圈沿着等离子体容纳区域的纵向轴线相对间隔距离（2）。在第一和第二天线线圈中通过放大器和匹配网络（102,108; 106,112）和单个RF发生器（114）产生电流。相移调节网络（116）建立第一天线中的电流的相位与第二天线中的电流的相位之间的差。相位差对应于在等离子体中发射螺旋波所需的相位差。在第二实施例中，室屏蔽件（118）由导电材料制成并且耦合到RF源，使得屏蔽件用作RF天线。屏蔽可以串联耦合到围绕屏蔽的线圈以增加合成的通量密度。

3. 发明公开

EP0685873A1 Inductively coupled plasma reactor with an electrode for enhancing plasma ignition 失效
标题翻译： Induktiv gekoppelter Plasmareaktor mit einer Elektrode zur Erleichterung derPlasmazündung。
公开(公告)号：EP0685873A1
公开(公告)日：1995-12-06
申请号：EP95108347.6
申请日：1995-05-31
申请人： APPLIED MATERIALS INC.
发明人： Forster, John , Cohen, Barney M. , Stimson, Bradley O. , Proulx, George
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32091 , H01J37/321 , H05H1/46
摘要： A plasma reactor for carrying out plasma processing of a semiconductor substrate (130) includes a vacuum chamber (100, 110) including apparatus (170) for introducing a gas into the interior thereof, an induction coil (140) encircling a region of the vacuum chamber (100, 110), the coil (140) being connected across an RF power source (150), and an electrode (180) positioned adjacent the region and connected to the RF power source (150) for capacitively coupling RF power to the gas in the interior of the vacuum chamber. The electrode (180) has a surface area facing the region which is large enough to provide capacitive coupling of RF power to the gas in the region sufficient to facilitate igniting a plasma, but which is small enough so that, during steady-state maintenance of the plasma, most of the RF power coupled to the plasma from the RF power source (150) is coupled inductively rather than capacitively.
摘要翻译：用于进行半导体衬底（130）的等离子体处理的等离子体反应器包括：真空室（100,110），包括用于将气体引入其内部的装置（170），包围真空区域的感应线圈（140）室（100,110），线圈（140）横跨RF电源（150）连接，并且电极（180）与位于该区域相邻并连接到RF电源（150）的电极（180）用于将射频功率电容耦合到气体在真空室内部。电极（180）具有面对区域的表面积，该表面积足够大以提供RF功率与该区域中的气体的电容耦合，该区域足以促进点燃等离子体，但足够小以使得在稳态维持期间等离子体，耦合到来自RF电源（150）的等离子体的大部分RF功率被感应耦合而不是电容耦合。

4. 发明公开

EP1058489A2 Method and apparatus for generating a plasma 失效
标题翻译：用于产生等离子体的方法和装置
公开(公告)号：EP1058489A2
公开(公告)日：2000-12-06
申请号：EP00119066.9
申请日：1996-11-14
申请人： APPLIED MATERIALS, INC.
发明人： Raaijmakers, Ivo , Stimson, Bradley O. , Forster, John
IPC分类号： H05H1/46
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32477
摘要： A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma in a vacuum chamber (100). In one embodiment, first and second antenna coils (104, 106) are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area by a distance (2). A current is generated in the first and second antenna coils through amplifiers and matching networks (102, 108; 106, 112) and a single RF generator (114). A phase shift regulating network (116) establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield (118) is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.

5. 发明公开

EP0799903A3 Methods of sputtering a metal onto a substrate and semiconductor processing apparatus 失效
标题翻译：一种用于溅射金属到衬底上和装置用于治疗半导体的方法
公开(公告)号：EP0799903A3
公开(公告)日：1999-11-17
申请号：EP96305733.6
申请日：1996-08-02
申请人： APPLIED MATERIALS, INC.
发明人： Xu, Zheng , Forster, John , Yao, Tse-Yong , Nulman, Jaim , Chen, Fusen
IPC分类号： C23C14/14 , C23C14/34 , H01L21/283 , H01L21/768 , H01J37/34 , H01L23/532 , C23C14/35
CPC分类号： C23C14/345 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01L21/28518 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also useful for forming interconnects that are highly resistant to electromigration. A liner or barrier layer (150) is first deposited by a high-density plasma (HDP) physical vapor deposition (PVD, also called sputtering) process, such as is done with an inductively coupled plasma. If a contact (140) is connected at its bottom to a silicon element (144), the first sublayer (160) of the liner layer is a Ti layer, which is silicided to the silicon substrate. The second sublayer (162) comprises TiN, which not only acts as a barrier against the migration of undesirable components into the underlying silicon but also when deposited with an HDP process and biased wafer forms a dense, smooth crystal structure. The third sublayer (164) comprises Ti and preferably is graded from TiN to Ti. Over the liner layer, an aluminum layer (156) is deposited in a standard, non-HDP process. The liner layer allows the hottest part of the aluminum deposition to be performed at a relatively low temperature between 320 and 500°C, preferably between 350 and 420°C, while still filling narrow plug holes, and the TiN does not need to be annealed to form an effective barrier against diffusion into the silicon. A horizontal interconnect formed by the inventive process is resistant to electromigration.

6. 发明公开

EP0807954A1 Coils for generating a plasma and for sputtering 失效
标题翻译：等离子体erzugendeZerstäubungsspulen
公开(公告)号：EP0807954A1
公开(公告)日：1997-11-19
申请号：EP97303124.8
申请日：1997-05-08
申请人： APPLIED MATERIALS, INC.
发明人： Nulman, Jaim , Edelstein, Sergio , Subramani, Mani , Xu, Zeng , Grunes, Howard , Tepman, Avi , Forster, John , Gopalraja, Praburam
IPC分类号： H01J37/34
CPC分类号： H01J37/3438 , H01J37/3402
摘要： A sputtering coil for a plasma chamber (100) in a semiconductor fabrication system is provided. The sputtering coil (104) couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece (112) from the coil to supplement material being sputtered from a target (110) onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.
摘要翻译：提供了一种用于半导体制造系统中的等离子体室（100）的溅射线圈。溅射线圈（104）将能量耦合到等离子体中并且还提供溅射材料源，以从线圈溅射到工件（112）上以补充从靶（110）溅射到工件上的材料。或者，可以提供多个线圈，一个主要用于将能量耦合到等离子体中，另一个主要用于提供要溅射在工件上的溅射材料的补充源。

7. 发明公开

EP0799903A2 Methods of sputtering a metal onto a substrate and semiconductor processing apparatus 失效
标题翻译：一种用于溅射金属到衬底上和装置用于治疗半导体的方法
公开(公告)号：EP0799903A2
公开(公告)日：1997-10-08
申请号：EP96305733.6
申请日：1996-08-02
申请人： APPLIED MATERIALS, INC.
发明人： Xu, Zheng , Forster, John , Yao, Tse-Yong , Nulman, Jaim , Chen, Fusen
IPC分类号： C23C14/14 , C23C14/34 , H01L21/283 , H01L21/768 , H01J37/34 , H01L23/532 , C23C14/35
CPC分类号： C23C14/345 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01L21/28518 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also useful for forming interconnects that are highly resistant to electromigration. A liner or barrier layer (150) is first deposited by a high-density plasma (HDP) physical vapor deposition (PVD, also called sputtering) process, such as is done with an inductively coupled plasma. If a contact (140) is connected at its bottom to a silicon element (144), the first sublayer (160) of the liner layer is a Ti layer, which is silicided to the silicon substrate. The second sublayer (162) comprises TiN, which not only acts as a barrier against the migration of undesirable components into the underlying silicon but also when deposited with an HDP process and biased wafer forms a dense, smooth crystal structure. The third sublayer (164) comprises Ti and preferably is graded from TiN to Ti. Over the liner layer, an aluminum layer (156) is deposited in a standard, non-HDP process. The liner layer allows the hottest part of the aluminum deposition to be performed at a relatively low temperature between 320 and 500°C, preferably between 350 and 420°C, while still filling narrow plug holes, and the TiN does not need to be annealed to form an effective barrier against diffusion into the silicon. A horizontal interconnect formed by the inventive process is resistant to electromigration.
摘要翻译：铝溅射工艺，用于填充通孔，并且通过电介质层而形成高纵横比的接触件，因此用于形成互连做有用特别有用的是高度抗电迁移。衬里层或阻挡层（150）首先通过高密度等离子体沉积（HDP）物理气相沉积（PVD，所谓的溅射）过程中，如与寻求电感耦合等离子体来完成。如果一个触点（140）在其底部的硅元件（144）连接，所述衬垫层的第一子层（160）是被硅化物化，硅基底Ti层，全部。第二子层（162）包含锡，这不仅作为防止不期望的组分的迁移的阻挡进入下方硅但具有当一个HDP工艺和偏压晶片形成致密，光滑的晶体结构，从而沉积。第三子层（164）包括Ti，优选分级由TiN与Ti。在铝层（156）上的衬垫层中的标准的，非HDP工艺被沉积。衬垫层允许该铝沉积的最热部分以℃，320和500之间的相对低的温度下进行，优选350和420℃之间，而静静地填充窄插头孔，和TiN并不需要进行退火处理以形成有效的屏障防止扩散到硅中。通过本发明方法形成的水平互连是电迁移抵抗性。

8. 发明公开

EP0758148A3 Method and apparatus for forming electrical contacts in multi-layer integrated circuits 失效
标题翻译： Verfahren und Apparat zum Herstellen elektrischer Kontakte in integrierten Mehrschicht-Schaltungen
公开(公告)号：EP0758148A3
公开(公告)日：1999-08-18
申请号：EP96305722.9
申请日：1996-08-02
申请人： APPLIED MATERIALS, INC.
发明人： Xu, Zheng , Forster, John , Yao, Tse-Yong
IPC分类号： H01L23/485 , H01L23/532 , H01L21/60
CPC分类号： H01L21/2855 , C23C14/0036 , C23C14/046 , C23C14/0641 , C23C14/32 , C23C14/358 , H01J37/34 , H01J2237/32 , H01L21/28518 , H01L21/76846 , H01L21/76876 , H01L21/76877 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The disclosure relates to a carrier layer (100) and a contact (118) enabled by the carrier layer which enables the fabrication of aluminium (including aluminum alloys and other conductive material having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches (113) having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer (100) in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material (110) which operates in conjunction with the electrical contact. The carrier layer preferably comprises a layer (112, 114, 116) formed by ionizing the flux of sputter deposition material, partially reacting the flux with a gas, and depositing the resulting material on a substrate.
摘要翻译：本公开涉及一种通过载体层实现的载体层（100）和触点（118），其能够在多层集成电路通孔中通过其形成铝（包括具有类似熔点的铝合金和其它导电材料）电触点孔或具有大于1的纵横比的沟槽（113）。事实上，已经显示了这种结构能够使通孔，通孔和沟槽中的这种接触制造具有高达至少5:1的纵横比，并且应该能够填充宽高比高达约12:1的孔。除了允许以高纵横比形成导电接触之外，载体层（100）提供了阻止铝迁移到与电触点一起操作的周围基板材料（110）的扩散阻挡层。载体层优选地包括通过电离溅射沉积材料的焊剂而形成的层（112,114,116），使焊剂与气体部分地反应，并将所得材料沉积在衬底上。

9. 发明授权

EP0685873B1 Inductively coupled plasma reactor with an electrode for enhancing plasma ignition 失效
标题翻译：具有等离子体点火电极，以便于电感耦合等离子体反应器
公开(公告)号：EP0685873B1
公开(公告)日：1998-12-16
申请号：EP95108347.6
申请日：1995-05-31
申请人： APPLIED MATERIALS, INC.
发明人： Forster, John , Cohen, Barney M. , Stimson, Bradley O. , Proulx, George
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32091 , H01J37/321 , H05H1/46

10. 发明公开

EP0782172A2 Plasma processing systems 失效
标题翻译：等离子处理系统
公开(公告)号：EP0782172A2
公开(公告)日：1997-07-02
申请号：EP96308504.8
申请日：1996-11-25
申请人： APPLIED MATERIALS, INC.
发明人： Forster, John , Chen, Aihua (Steve) , Grunes, Howard , Lowrance, Robert B. , Hoffmann, Ralf , Xu, Zheng , Dorleans, Fernand
IPC分类号： H01J37/32
CPC分类号： H01J37/32477 , H01J37/321 , Y10S156/916
摘要： A coil shield assembly (48) for an RF field coil (34) in a plasma processing system includes a first shield (50) positioned inside the coil. The first shield has a central opening substantially surrounding a central space of a processing chamber in which the plasma is maintained. At least one slot (52) is formed in the first shield and extends therethrough. A barrier (54) is positioned between the first shield and the coil and spaced apart from the first shield near the at least one slot. The slot permits an RF signal from the coil to couple with the plasma, and the first shield and the barrier are structured and arranged to prevent plasma ions or sputtered material from bombarding the coil by a direct path from the central space and through the at least one slot.
摘要翻译：用于等离子体处理系统中的RF场线圈（34）的线圈屏蔽组件（48）包括位于线圈内的第一屏蔽（50）。第一屏蔽件具有基本上围绕处理室的中央空间的中央开口，在处理室中维持等离子体。至少一个槽（52）形成在第一护罩中并延伸穿过其中。屏障（54）位于第一屏蔽和线圈之间并且与第一屏蔽在该至少一个槽附近间隔开。狭缝允许来自线圈的RF信号与等离子体耦合，并且第一屏蔽和屏障被构造和布置成防止等离子体离子或溅射材料通过从中心空间直接通过并且穿过至少一个一个插槽。

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