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1. 发明公开

EP3384063A1 PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS 有权
公开(公告)号：EP3384063A1
公开(公告)日：2018-10-10
申请号：EP16808948.0
申请日：2016-11-30
申请人： BASF SE , Georg-August-Universität Göttingen
发明人： ADERMANN, Torben , LOEFFLER,Daniel , WILMER, Hagen , SCHIERLE-ARNDT, Kerstin , GERKENS, Jan , VOLKMANN, Christian , SCHNEIDER, Sven
IPC分类号： C23C16/18 , C23C16/455 , C07F13/00 , C07F15/04 , C07F15/06
CPC分类号： C07F15/065 , C01B33/06 , C09D1/00 , C09D5/021 , C23C16/18 , C23C16/45525 , C23C16/45553 , H01L21/28518 , H01L21/28556 , H01L21/76841
摘要： The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.

2. 发明授权

EP2596147B1 METHOD FOR MANUFACTURING A BARRIER LAYER 有权
标题翻译：制造障碍层的方法
公开(公告)号：EP2596147B1
公开(公告)日：2017-09-06
申请号：EP11739146.6
申请日：2011-07-12
申请人： Fujifilm Manufacturing Europe BV
发明人： DE VRIES, Hindrik
IPC分类号： C23C16/54 , H01L21/768 , H01L31/048 , H01L31/0392
CPC分类号： H01L21/76841 , C23C16/545 , H01L31/0392 , H01L31/03926 , H01L31/048 , Y02E10/50

3. 发明授权

EP2866254B1 Procédé de réalisation d'un revêtement métallique sur une surface 有权
标题翻译：一种用于在表面上产生的金属涂层方法
公开(公告)号：EP2866254B1
公开(公告)日：2017-04-19
申请号：EP14178355.5
申请日：2014-07-24
申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
发明人： Baillin, Xavier , Gaspuratto, Didier
IPC分类号： H01L21/768 , H01L21/288 , C23C18/16 , C23C18/18
CPC分类号： C23C18/08 , C23C18/02 , C23C18/04 , C23C18/10 , C23C18/1608 , C23C18/1612 , C23C18/1653 , C23C18/1893 , C23C18/2086 , H01L21/288 , H01L21/76841 , H01L21/76874 , H01L21/76898

4. 发明公开

EP3031079A1 STACKED REDISTRIBUTION LAYERS ON DIE 审中-公开
标题翻译：堆叠式重分布层上的芯片
公开(公告)号：EP3031079A1
公开(公告)日：2016-06-15
申请号：EP14750930.1
申请日：2014-07-30
申请人： Qualcomm Incorporated
发明人： HAU-RIEGE, Christine Sung-An , YAU, You-Wen , CAFFEY, Kevin, Patrick , KESER, Lizabeth, Ann , MCALLISTER, Gene, H. , ALVARADO, Reynante, Tamunan , BEZUK, Steve, J. , GASTELUM, Damion, Bryan
IPC分类号： H01L23/532
CPC分类号： H01L23/485 , H01L21/76841 , H01L21/76895 , H01L23/525 , H01L23/53238 , H01L23/53266 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0231 , H01L2224/02331 , H01L2224/0239 , H01L2224/0401 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05024 , H01L2224/05083 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05548 , H01L2224/05572 , H01L2224/05582 , H01L2224/05583 , H01L2224/05647 , H01L2224/05657 , H01L2224/1134 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2224/94 , H01L2924/01074 , H01L2924/00014 , H01L2224/03 , H01L2224/11 , H01L2924/014
摘要： Some implementations provide a semiconductor device (e.g., die) that includes a substrate, several metal layers and dielectric layers coupled to the substrate, a pad coupled to one of the plurality of metal layers, a first metal redistribution layer coupled to the pad, and a second metal redistribution layer coupled to the first metal redistribution layer. The second metal redistribution layer includes a cobalt tungsten phosphorous material. In some implementations, the first metal redistribution layer is a copper layer. In some implementations, the semiconductor device further includes a first underbump metallization (UBM) layer and a second underbump metallization (UBM) layer.

5. 发明公开

EP2866254A3 Procédé de réalisation d'un revêtement métallique sur une surface 有权
标题翻译：一种用于在表面上产生的金属涂层方法
公开(公告)号：EP2866254A3
公开(公告)日：2015-11-25
申请号：EP14178355.5
申请日：2014-07-24
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Baillin, Xavier , Gaspuratto, Didier
IPC分类号： H01L21/768 , H01L21/288 , C23C18/16 , C23C18/18
CPC分类号： C23C18/08 , C23C18/02 , C23C18/04 , C23C18/10 , C23C18/1608 , C23C18/1612 , C23C18/1653 , C23C18/1893 , C23C18/2086 , H01L21/288 , H01L21/76841 , H01L21/76874 , H01L21/76898
摘要： L'invention concerne un procédé de réalisation d'un revêtement métallique sur une portion de la surface d'un substrat (200) d'un dispositif microélectronique caractérisé en ce qu'il comprend, à partir d'un brin d'acide nucléique (100) modifié comprenant une structure de brin d'acide nucléique, au moins une nanoparticule (20) métallique et/ou un atome (40) métallique et au moins une fonction chimique (60), au moins une étape de fixation de la fonction chimique (60) du au moins un brin d'acide nucléique (100) modifié sur la portion de la surface du substrat (200).

6. 发明公开

EP2859582A2 REDUCED STRESS TSV AND INTERPOSER STRUCTURES 有权转让
标题翻译：的降压和插入结构TSV
公开(公告)号：EP2859582A2
公开(公告)日：2015-04-15
申请号：EP13783123.6
申请日：2013-06-06
申请人： Invensas Corporation
发明人： UZOH, Cyprian Emeka , WOYCHIK, Charles G. , CASKEY, Terrence , DESAI, Kishor V. , WEI, Huailiang , MITCHELL, Craig , HABA, Belgacem
IPC分类号： H01L21/768 , H01L23/48 , H01L23/00
CPC分类号： H01L23/34 , H01L21/76841 , H01L21/76883 , H01L21/76885 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L24/05 , H01L24/10 , H01L24/13 , H01L2224/0401 , H01L2224/05558 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/1134 , H01L2224/1147 , H01L2224/13082 , H01L2224/13083 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/13565 , H01L2224/32105 , H01L2924/00011 , H01L2924/01322 , H01L2924/07811 , H01L2924/12042 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2224/81805
摘要： A component can include a substrate and a conductive via extending within an opening in the substrate. The substrate can have first and second opposing surfaces. The opening can extend from the first surface towards the second surface and can have an inner wall extending away from the first surface. A dielectric material can be exposed at the inner wall. The conductive via can define a relief channel within the opening adjacent the first surface. The relief channel can have an edge within a first distance from the inner wall in a direction of a plane parallel to and within five microns below the first surface, the first distance being the lesser of one micron and five percent of a maximum width of the opening in the plane. The edge can extend along the inner wall to span at least five percent of a circumference of the inner wall.

7. 发明公开

EP2810950A1 Niobium-complexes and their use in a method for forming a niobium-containing layer on a substrate 审中-公开
标题翻译：铌复合物以及它们在一种用于在衬底上制造含铌的层中使用
公开(公告)号：EP2810950A1
公开(公告)日：2014-12-10
申请号：EP13305748.9
申请日：2013-06-04
申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
发明人： Lachaud, Christophe , Correia - Anacleto, Antony , Lahootun, Vanina , Zauner, Andreas
IPC分类号： C07F9/00 , H01L21/00 , H01L27/00
CPC分类号： C07F9/00 , C23C16/34 , C23C16/45553 , H01L21/28088 , H01L21/28562 , H01L21/76841
摘要： A method for forming a niobium-containing layer on a substrate, the method comprising at least the steps of:
a) providing a vapor comprising at least one precursor compound according to the invention;
b) reacting the vapor comprising the at least one compound according to the invention with the substrate, according to an atomic layer deposition process, to form a layer of a niobium-containing complex on at least one surface of said substrate.
摘要翻译：一种用于形成在基片的含铌的层的方法，该方法包括至少下列步骤：a）提供蒸气，其包含至少一种前体化合物gemäß发明; B）反应的蒸气包含所述至少一种化合物gemäß到与基片本发明，gemäß在原子层沉积工艺，在所述基底中的至少一个表面上形成含铌的复合物的层。

8. 发明公开

EP1983570A2 Integrierte Schaltungsanordnung mit Zwischenmaterialien und zugehörige Komponenten 审中-公开
标题翻译：与中间材料和相关联的部件集成电路装置
公开(公告)号：EP1983570A2
公开(公告)日：2008-10-22
申请号：EP08161487.7
申请日：2003-08-14
申请人： Infineon Technologies AG
发明人： Fischer, Armin , Glasow von, Alexander
IPC分类号： H01L23/522 , G06F17/50 , H01L23/532
CPC分类号： H01L23/5226 , G06F17/5068 , H01L21/76841 , H01L2924/0002 , H01L2924/00
摘要： Erläutert wird unter anderem eine integrierte Schaltungsanordnung, in der sich Via-Liner (28) und Leitbahn-Liner (20) berühren. Durch diese Berührung werden die elektrischen Eigenschaften, insbesondere die Lebensdauer bzw. Zuverlässigkeit, der integrierten Schaltungsanordnung (10) verbessert.
摘要翻译：集成的开关装置（10）包括含有导电通路设置在一个侧表面上的金属化层（16）（14），导电通路电介质（18）的导电通路之间，以导电的途径中间体材料（20）（40）导电通路和电介质，导电连接部（12），的连接电介质（24）的连接部分和电介质之间设置在连接部分，并且连接部分的中间材料（28）之间和/或一个连接部分之间，并导电通路。因此独立权利要求中包括了以下内容：（1）用于制备用于集成开关装置的制造中的设计数据; （2）在设计生产过程中使用方案; 和（3）的装置，尤其是爱的数据处理设备，用于制造的设计数据。

9. 发明公开

EP1661160A2 SUPERCRITICAL FLUID-ASSISTED DEPOSITION OF MATERIALS ON SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译： BY超临界流体支MATTER留置在半导体基板上存款
公开(公告)号：EP1661160A2
公开(公告)日：2006-05-31
申请号：EP04779392.2
申请日：2004-07-28
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： XU, Chongying , BAUM, Thomas, H. , KORZENSKI, Michael, B.
IPC分类号： H01L21/00
CPC分类号： C23C18/122 , C23C18/00 , C23C18/08 , C23C18/1204 , C23C18/1208 , C23C18/1212 , C23C18/1216 , C23C18/1275 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/288 , H01L21/3121 , H01L21/31695 , H01L21/76801 , H01L21/76841 , H01L21/76877 , H01L2924/0002 , H01L2924/00
摘要： Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

10. 发明公开

EP1467400A3 Capacitor 失效
标题翻译：电容器
公开(公告)号：EP1467400A3
公开(公告)日：2004-10-20
申请号：EP04076904.4
申请日：1996-07-05
申请人： ROHM CO., LTD.
发明人： Nakamura, Takashi, c/o Rohm Co., Ltd.
IPC分类号： H01L21/3205 , H01L27/108 , H01L21/8242
CPC分类号： H01L21/32051 , H01L21/76841 , H01L27/0805 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/65 , H01L28/75
摘要： A capacitor of the type having an insulative layer (8) of at least one of a ferroelectric substance and a dielectric substance having a high dielectric constant, sandwiched between a lower electrode (12) and an upper electrode (15). One or both electrodes (12,15) is made of a material of columnar crystals (6) and includes a layer of at least any one of WO x , TiO x , TaO x , IrO 2 , PtO 2 , RuO x , ReO x , PdO x and OsO x . The lower electrode (12) may be formed on an oxidation layer (4), for example a silicon oxidation layer, on a substrate (2). The lower electrode (12) may be composed by forming a conductive layer made of any one of W, Ti, Ta, Ir, Pt, Ru, Re, Pd, and Os on the oxidation layer.
摘要翻译：一种电容器，它具有夹在下电极（12）和上电极（15）之间的铁电物质和介电常数至少之一的绝缘层（8）。一个或两个电极（12,15）由柱状晶体（6）的材料制成并且包括WOx，TiOx，TaOx，IrO2，PtO2，RuOx，ReOx，PdOx和OsOx中的至少任一种的层。下电极（12）可以形成在衬底（2）上的氧化层（4）上，例如硅氧化层上。下电极（12）可以通过在氧化层上形成由W，Ti，Ta，Ir，Pt，Ru，Re，Pd和Os中的任何一种制成的导电层来构成。

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