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71. 发明公开

EP2277696A3 Vacinal gallium nitride substrate for high quality homoepitaxy 有权转让
标题翻译：为高质量homoepitaxi连位氮化镓衬底
公开(公告)号：EP2277696A3
公开(公告)日：2011-02-16
申请号：EP10010998.2
申请日：2004-11-12
申请人： Cree, Inc.
发明人： Vaudo, Robert P. , Xu, Xueping , Flynn, Jeffrey S. , Brandes, George R.
IPC分类号： B32B9/00 , C30B29/38 , C30B29/40 , H01L21/46 , C30B25/18
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L29/045 , H01L29/2003 , Y10T83/0524 , Y10T428/31
摘要： The invention provides an (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle, and a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

72. 发明公开

EP1697965A4 NON-POLAR (A1, B, In, Ga)N QUANTUM WELLS 审中-公开
标题翻译：非污染物（A1，B，IN，GA）N-QUANTUM灯泡
公开(公告)号：EP1697965A4
公开(公告)日：2011-02-09
申请号：EP03790447
申请日：2003-12-11
申请人： UNIV CALIFORNIA , JAPAN SCIENCE & TECH AGENCY
发明人： CRAVEN MICHAEL D , DENBAARS STEVEN P
IPC分类号： H01L21/20 , C30B25/02 , C30B25/04 , C30B25/10 , C30B25/18 , C30B29/40 , C30B29/60 , H01L21/00 , H01L21/205 , H01L29/15 , H01L29/20 , H01L33/00
CPC分类号： H01L33/24 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/403 , C30B29/406 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/155 , H01L29/2003 , H01L33/0025 , H01L33/007 , H01L33/06 , H01L33/32 , H01L33/325
摘要： A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

73. 发明公开

EP2261401A1 NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译： NISTRIDHALBLEITERKRISTALL UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2261401A1
公开(公告)日：2010-12-15
申请号：EP09717726.5
申请日：2009-03-02
申请人： Mitsubishi Chemical Corporation
发明人： FUJITO, Kenji , KUBO, Shuichi , MASHIGE, Yoko
IPC分类号： C30B29/38 , C23C16/34 , C30B25/14 , C30B25/18 , H01L21/205
CPC分类号： C30B25/00 , C01B21/06 , C23C16/303 , C30B23/00 , C30B25/02 , C30B25/14 , C30B25/18 , C30B29/403 , H01L21/02378 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/0262 , Y10T428/2982
摘要： A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.
摘要翻译：提供了一种以简单的方法有效地生产具有所需主平面的板状氮化物半导体晶体的方法。将原料气体供给到通过在晶种上投影晶体生长面而获得的投影面的长度方向的长度L的长度L（L / W）和最大宽度W的种子晶种方向为2〜400，最大宽度W为5mm以下，从而在晶种上生长板状半导体晶体。

74. 发明公开

EP2257658A1 METHOD OF MAKING NUCLEATION LAYER FOR DIAMOND GROWTH 有权
标题翻译：一种用于生产SHOOT形成层生长钻石
公开(公告)号：EP2257658A1
公开(公告)日：2010-12-08
申请号：EP09714552.8
申请日：2009-02-18
申请人： Institute Of Physics Of The Academy Of Sciences, V.V.I.
发明人： REZEK, Bohuslav , VANECEK, Milan , KROMKA, Alexander , POTOCKY, Stepan , POTMESIL, Jiri
IPC分类号： C30B29/04 , C30B25/18 , C23C16/02 , C23C16/27
CPC分类号： C30B29/04 , C23C16/0272 , C23C16/274 , C30B25/10 , C30B25/18
摘要： A method for the fabrication of a nucleation layer for the growth of diamond by chemical vapor deposition based on the addition of diamond powder into a solution of a polymer, homogenization of the resulting suspension, deposition of the resulting polymer composite on a substrate, annealing of the fabricated structure to the temperature corresponding to the hardening temperature of the used polymer and etching away of the polymer composite. This procedure gets the substrate ready for the growth of diamond or its ultra-thin layers by chemical vapor deposition. The polymer composite can be deposited in one or more layers. The polymer composite can also be deposited on the substrate selectively using basic lithographic techniques, which leads to the growth of diamond in geometrically predefined patterns on the substrate allowing for the fabrication of layered diamond structures in one technological process.

75. 发明公开

EP2133450A4 SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING NITRIDE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 审中-公开
标题翻译：基板的外延生长，并产生氮化物化合物半导体单晶的方法
公开(公告)号：EP2133450A4
公开(公告)日：2010-12-08
申请号：EP08721552
申请日：2008-03-07
申请人： NIPPON MINING CO
发明人： TAKAKUSAKI MISAO , MORIOKA SATORU , SHIMIZU TAKAYUKI
IPC分类号： C30B29/24 , C23C16/02 , C23C16/34 , C30B25/18 , C30B29/38 , C30B33/02 , H01L21/205
CPC分类号： C30B15/00 , C23C16/0218 , C30B25/18 , C30B29/24 , C30B29/406 , C30B33/02 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02661

76. 发明公开

EP2246462A1 III-GROUP NITRIDE SINGLE-CRYSTAL INGOT, III-GROUP NITRIDE SINGLE-CRYSTAL SUBSTRATE, METHOD FOR MANUFACTURING III-GROUP NITRIDE SINGLE-CRYSTAL INGOT, AND METHOD FOR MANUFACTURING III-GROUP NITRIDE SINGLE-CRYSTAL SUBSTRATE 审中-公开
标题翻译： III族氮化物单晶锭，Ⅲ族氮化物晶体衬底，用于生产III族氮化物单晶锭AND METHOD FOR PRODUCING III族氮化物晶体衬底
公开(公告)号：EP2246462A1
公开(公告)日：2010-11-03
申请号：EP08871801.0
申请日：2008-12-24
申请人： Sumitomo Electric Industries, Ltd.
发明人： OKAHISA, Takuji , NAKAHATA, Seiji , UEMURA, Tomoki
IPC分类号： C30B29/38 , C23C16/34 , C30B25/18
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , C30B33/12
摘要： Affords Group-III nitride single-crystal ingots and III-nitride single-crystal substrates manufactured utilizing the ingots, as well as methods of manufacturing III-nitride single-crystal ingots and methods of manufacturing III-nitride single-crystal substrates, wherein the incidence of cracking during length-extending growth is reduced. Characterized by including a step of etching the edge surface of a base substrate, and a step of epitaxially growing onto the base substrate hexagonal-system III-nitride monocrystal having crystallographic planes on its side surfaces. In order to reduce occurrences of cracking during length-extending growth of the ingot, depositing-out of polycrystal and out-of-plane oriented crystal onto the periphery of the monocrystal must be controlled. A layer of the base substrate edge surface, as just described, where it has been mechanically altered is removed beforehand by etching, whereby crystallographic planes form on the side surfaces of the III-nitride single-crystal ingot that is formed onto the base substrate, which therefore controls depositing-out of polycrystal and out-of-plane oriented crystal and reduces occurrences of cracking.
摘要翻译：得到III族氮化物单晶锭，Ⅲ族氮化物单晶衬底制造利用铸锭，以及制造III族氮化物单晶锭的方法及制造III族氮化物单晶衬底的方法，worin发病时的裂纹的长度延伸的生长减少。通过包括蚀刻基底基板的边缘表面的步骤，和外延生长在基体基板六方晶系III族氮化物单晶具有在其侧表面的结晶学平面的工序为特征。为了减少锭的长度延伸的生长过程中裂纹发生率，多晶的沉积出和外的面取向的晶体走上单晶的周边必须控制。基础基板的边缘表面的层，如刚刚描述的，在那里它已经被机械改变被去除预先通过蚀刻，由此晶面的III族氮化物单晶锭的侧面上形成并形成到基础基板，其因此控制存入出多晶的和出不同面取向的晶体并减少裂纹的发生。

77. 发明公开

EP1553215A3 Diamond single crystal composite substrate and method for manufacturing the same 有权
标题翻译：其制备方法由结晶金刚石复合材料和方法的基片
公开(公告)号：EP1553215A3
公开(公告)日：2010-09-22
申请号：EP04257321.2
申请日：2004-11-25
申请人： Sumitomo Electric Industries, Ltd.
发明人： Meguro, Kiichi, Sumitomo Electric Industries, Ltd. , Yamamoto, Yoshiyuki , Imai, Takahiro, Sumitomo Electric Industries, Ltd.
IPC分类号： C30B29/04 , C30B25/02 , C30B25/18
CPC分类号： C30B29/04 , C30B25/20
摘要： A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.

78. 发明公开

EP2192625A1 Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element 有权
标题翻译：生长的GaN单晶的制造方法，制造GaN衬底，用于制造基于GaN和的元素的过程的方法，GaN基元件上
公开(公告)号：EP2192625A1
公开(公告)日：2010-06-02
申请号：EP10156008.4
申请日：2006-03-31
申请人： Tohoku Techno Arch Co., Ltd. , Furukawa Co., Ltd. , Mitsubishi Chemical Corporation , DOWA Holdings Co., Ltd , EpiValley Co., Ltd. , Wavesquare Inc.
发明人： Cho, Meoung-Whan , Yao, Takafumi
IPC分类号： H01L33/00 , H01L21/20 , H05B33/10 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/78
CPC分类号： C30B29/406 , C30B25/02 , C30B25/183 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02614 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This Gan single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.
摘要翻译： GaN系薄膜（厚膜）是利用生长在衬底上的金属缓冲层生长。（A）制成的金属缓冲层（210），例如Cr或Cu蒸镀于蓝宝石衬底（120）。通过气相沉积在蓝宝石衬底（120）上的金属缓冲层（210）获得（B）的基板在氨在环境气体氮化，从而形成金属氮化物层（212）。（C）的GaN缓冲层（222）上生长的氮化的金属缓冲层（210，212）。（D）。最后，一个GaN单结晶层（220）上生长。该GaN单晶层（220）可生长而具有各种厚度取决于对象。自支撑衬底可通过上述步骤制造的基板的选择性化学蚀刻来制造。因此，有可能使用由上述步骤作为用于制造基于GaN的发光二极管或激光二极管的GaN模板基板制造的基材。

80. 发明公开

EP2103720A1 Susceptor for vapor phase epitaxial growth device 有权
标题翻译：垃圾焚烧师 - 防火墙 - Epitaxialwachstumsvorrichtung
公开(公告)号：EP2103720A1
公开(公告)日：2009-09-23
申请号：EP09001968.8
申请日：2009-02-12
申请人： SUMCO CORPORATION , Sumco Techxiv Corporation
发明人： Fujikawa, Takashi , Ishibashi, Masayuki , Iriguchi, Kazuhiro c/o Sumco Techxiv Corp., , Kawano, Kouhei c/o Sumco Techxiv Corp.,
IPC分类号： C30B25/18 , C23C16/458
CPC分类号： C30B25/12 , C23C16/4588
摘要： There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0mm 2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.
摘要翻译：提供了一种用于气相外延生长装置的基座，通过该感受器防止在装载硅晶片时的打滑，并且晶片可以被装载在基座的固定位置：其中具有倾斜面的环形凹槽变宽朝向基座的表面形成在底面的最外周上; 形成穿过基座的后表面的气体释放口，其截面积为2.0〜3.0mm 2，底面的所有开口面积的比例为0.25〜0.5％。

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