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71. 发明公开

EP2190006A4 COMPOUND SEMICONDUCTOR SUBSTRATE, PROCESS FOR PRODUCING COMPOUND SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：复合半导体衬底及其制造方法半导体衬底和半导体元件
公开(公告)号：EP2190006A4
公开(公告)日：2011-09-28
申请号：EP08830273
申请日：2008-09-12
申请人： ASAHI KASEI EMD CORP
发明人： SHIBATA YOSHIHIKO , MIYAHARA MASATOSHI , IKEDA TAKASHI , KUNIMI YOSHIHISA
IPC分类号： H01L21/02 , C30B25/18 , C30B29/40 , H01L21/203 , H01L21/205 , H01L29/26 , H01L29/267 , H01L43/06
CPC分类号： H01L29/267 , C30B25/18 , C30B29/40 , H01L21/02381 , H01L21/02546 , H01L21/02658 , H01L43/065

72. 发明公开

EP2334839A2 PROCEDE DE CROISSANCE CONTROLEE DE FILM DE GRAPHENE 审中-公开
标题翻译： METHOD FOR A GRAPH薄膜的控制生长
公开(公告)号：EP2334839A2
公开(公告)日：2011-06-22
申请号：EP09736945.8
申请日：2009-10-16
申请人： Ecole Polytechnique , Centre National de la Recherche Scientifique
发明人： BARATON, Laurent , COJOCARU, Costel-Sorin , PRIBAT, Didier
IPC分类号： C23C16/02 , C23C16/26 , C23C16/56 , C30B25/02 , C30B29/00 , C30B25/18 , C30B29/02 , C30B1/10 , C01B31/02
CPC分类号： C23C16/26 , C23C16/0281 , C23C16/56 , C30B25/02 , C30B29/02
摘要： The invention relates to a method for the controlled growth of a graphene film, characterised in that said method comprises the following steps: forming, at the surface of a substrate (S
1 ), a layer of a metal having a phase diagram with carbon such that, beyond a threshold ratio of molar concentration C
M /C
M +C
C , with C
M being the molar concentration of the metal in the metal/carbon mixture and C
C being the molar concentration of carbon in said mixture, a solid homogenous composition can be obtained; exposing the metal layer to a controlled flow of carbon atoms or carbon radicals or carbon ions at a temperature such that the resultant molar concentration ratio is higher than the threshold ratio in order to obtain a solid solution of the carbon in the metal; an operation for modifying the phase of the mixture into two phases of metal and graphite, thus leading to the formation of at least one lower graphene film (31) at the interface of the metal layer including carbon atoms and the substrate, and the formation of an upper graphene film (30) at the surface of the metal layer.

73. 发明公开

EP2218806A4 ALN CRYSTAL AND METHOD FOR GROWING THE SAME 审中-公开
标题翻译： AlN晶体和方法进行繁殖
公开(公告)号：EP2218806A4
公开(公告)日：2011-05-18
申请号：EP08857491
申请日：2008-11-13
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： SATOH ISSEI , MIZUHARA NAHO , TANIZAKI KEISUKE , MIYANAGA MICHIMASA , NAKAHATA HIDEAKI
IPC分类号： C30B29/38 , C30B23/00 , C30B23/06 , C30B25/00 , C30B25/18 , H01L21/203 , H01L21/205 , H01L33/32
CPC分类号： C30B29/403 , C30B23/00 , C30B23/025 , C30B25/00 , C30B25/18

74. 发明公开

EP2226413A4 PROCESS FOR PRODUCING DIAMOND SINGLE CRYSTAL WITH THIN FILM AND DIAMOND SINGLE CRYSTAL WITH THIN FILM 有权
标题翻译：工艺生产具有薄膜单金刚石晶体
公开(公告)号：EP2226413A4
公开(公告)日：2011-05-11
申请号：EP07860225
申请日：2007-12-26
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： UEDA AKIHIKO , MEGURO KIICHI , YAMAMOTO YOSHIYUKI , NISHIBAYASHI YOSHIKI , IMAI TAKAHIRO
IPC分类号： C30B29/04 , C30B25/18 , C30B25/20
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30

75. 发明公开

EP2287368A2 Apparatus and method for producing (Ai, Ga, In)N material using an in-situ laser for parting this material 有权
标题翻译：设备和方法，用于一（铝，镓，In）N材料的使用在原位激光该材料分离制备
公开(公告)号：EP2287368A2
公开(公告)日：2011-02-23
申请号：EP10011142.6
申请日：2002-08-12
申请人： Cree, Inc.
发明人： Vaudo, Robert P. , Brandes, George R. , Tischler, Michael A. , Kelly, Michael K.
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/0242 , H01L21/02439 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10S117/913 , Y10S117/915
摘要： An apparatus adapted to perform crystal growth and in situ laser parting, the apparatus comprising: a growth reactor including a pedestal adapted to support a sacrificial template, the pedestal being adapted to permit transmission of a laser beam; and a laser operatively coupled with the growth reactor to transmit a laser beam through the pedestal. Such apparatus may be used in a method for producing (Al,Ga,In)N material suitable for fabrication of microelectronic or optoelectronic devices.
摘要翻译：一种装置angepasst进行晶体生长和原位激光分离，所述设备包括：一个生长炉包括一个基座angepasst以支持牺牲模板，基座是angepasst以允许激光束的传输; 和可操作地与生长反应器的激光发射通过基座的激光束。搜索装置可以在一个方法被用于产生适合于微电子或光电器件的制造（铝，镓，In）N材料。

76. 发明公开

EP2243868A1 LAMINATE AND PROCESS FOR PRODUCING THE LAMINATE 审中-公开
标题翻译： LAMINAT UND VERFAHREN ZUR HERSTELLUNG DES LAMINATS
公开(公告)号：EP2243868A1
公开(公告)日：2010-10-27
申请号：EP09702588.6
申请日：2009-01-09
申请人： National University Corporation Tokyo University of Agriculture and Technology , Tokuyama Corporation
发明人： KOUKITU, Akinori , KUMAGAI, Yoshinao , ISHIZUKI, Masanari , NAGASHIMA, Toru , HAKOMORI, Akira , TAKADA, Kazuya
IPC分类号： C30B29/38 , C30B25/18
CPC分类号： C30B25/18 , C30B25/183 , C30B29/403
摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800 °C in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600 °C, for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600 °C in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.
摘要翻译：本发明提供一种自支撑基板，其通过以下步骤获得：在由无机的单晶制成的基底上形成厚度在3〜200nm范围内的Al系III族氮化物薄层在800℃，在惰性气体气氛中基本上不分解的物质，当与800-1600℃的温度范围内的还原气体接触时会分解产生挥发物，例如蓝宝石; 通过在800-1600℃的温度范围内，在含有氨气体的还原性气体气氛中对叠层基板进行热处理，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙 ; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其晶面显示出大的曲率半径。

77. 发明授权

EP1576210B1 A SUBSTRATE FOR EPITAXY AND A METHOD OF PREPARING THE SAME 失效
标题翻译：衬底为外延和方法及其
公开(公告)号：EP1576210B1
公开(公告)日：2010-02-10
申请号：EP03778843.7
申请日：2003-12-11
申请人： AMMONO Sp. z o.o.
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo, c/o NICHIA CORPORATION
IPC分类号： C30B25/02 , C30B25/18 , H01L21/205
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0245 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02628 , H01L21/02636 , Y10T428/266

78. 发明公开

EP2133450A1 SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING NITRIDE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 审中-公开
标题翻译：基板的外延生长，并产生氮化物化合物半导体单晶的方法
公开(公告)号：EP2133450A1
公开(公告)日：2009-12-16
申请号：EP08721552.1
申请日：2008-03-07
申请人： Nippon Mining & Metals Co., Ltd.
发明人： TAKAKUSAKI, Misao , MORIOKA, Satoru , SHIMIZU, Takayuki
IPC分类号： C30B29/24 , C23C16/02 , C23C16/34 , C30B25/18 , C30B29/38 , H01L21/205
CPC分类号： C30B15/00 , C23C16/0218 , C30B25/18 , C30B29/24 , C30B29/406 , C30B33/02 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02661
摘要： Provided is a technique for stabilizing characteristics of an NdGaO 3 substrate used for epitaxial growth so as to grow a fine nitride compound semiconductor single crystal with good reproducibility. A single crystal of NdGaO 3 grown by a crystal pulling method is subjected to an annealing treatment at 1400°C or more and 1500°C or less for a predetermined time period (for example, 10 hours) in the air, and this annealed NdGaO 3 substrate is used as a substrate for epitaxial growth.
摘要翻译：提供了一种用于稳定用于外延生长，以生长具有良好的再现性的优良的氮化物化合物半导体单晶的NdGaO 3层基板的特性的技术。通过拉晶法生长NdGaO 3的单晶在退火处理进行在1400℃或更高并在空气中在预定的时间周期1500℃或以下（例如，10小时），并且该退火NdGaO 3个基板被用作外延生长用基板。

79. 发明公开

EP2104754A1 PRODUCTION OF SINGLE-CRYSTAL SEMICONDUCTOR MATERIAL USING A NANOSTRUCTURE TEMPLATE 有权转让
标题翻译：制备单晶半导体材料的使用纳米结构模板
公开(公告)号：EP2104754A1
公开(公告)日：2009-09-30
申请号：EP08702115.0
申请日：2008-01-17
申请人： Nanogan Limited
发明人： WANG, Wang Nang
IPC分类号： C30B25/00 , C30B25/02 , C30B25/04 , C30B25/18 , C30B29/40 , C30B29/48 , C30B29/36 , C30B29/16 , C30B29/60
CPC分类号： C30B25/00 , C30B25/02 , C30B25/04 , C30B25/18 , C30B29/16 , C30B29/36 , C30B29/40 , C30B29/403 , C30B29/406 , C30B29/48 , C30B29/60 , H01L33/007 , H01L33/0079
摘要： A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to form a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.

80. 发明公开

EP2100989A1 Method for preparing substrate having monocrystalline film 有权
标题翻译： Verfahren zur Herstellung eines Substrats mit monokristalliner Schicht
公开(公告)号：EP2100989A1
公开(公告)日：2009-09-16
申请号：EP09250519.7
申请日：2009-02-26
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Kubota, Yoshihiro , Kawai, Makoto , Tanaka, Kouichi , Tobisaka, Yuji , Akiyama, Shoji , Nojima, Yoshihiro
IPC分类号： C30B19/12 , C30B25/18 , C30B23/00 , C30B33/02 , C30B33/06 , C30B31/20
CPC分类号： C30B31/20 , C30B19/12 , C30B23/025 , C30B25/183 , C30B29/04 , C30B29/06 , C30B29/16 , C30B29/36 , C30B29/40 , C30B33/02 , C30B33/06 , H01L21/76254
摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.
摘要翻译：本发明提供一种在不使用特殊基板的情况下容易地制备其上或其上几乎没有晶体缺陷的单晶膜的基板的方法。更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中至少步骤A至E通过使用其上形成有单晶膜或其上方的施主衬底的手柄衬底重复。

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