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1. 发明授权

EP1576210B1 A SUBSTRATE FOR EPITAXY AND A METHOD OF PREPARING THE SAME 失效
标题翻译：衬底为外延和方法及其
公开(公告)号：EP1576210B1
公开(公告)日：2010-02-10
申请号：EP03778843.7
申请日：2003-12-11
申请人： AMMONO Sp. z o.o.
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo, c/o NICHIA CORPORATION
IPC分类号： C30B25/02 , C30B25/18 , H01L21/205
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0245 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02628 , H01L21/02636 , Y10T428/266

2. 发明授权

EP1405936B1 METHOD FOR MANUFACTURING ALUMINUM NITRIDE BULK SINGLE CRYSTAL 有权
标题翻译：用于生产氮化铝块状单晶
公开(公告)号：EP1405936B1
公开(公告)日：2008-12-24
申请号：EP02733363.2
申请日：2002-06-06
申请人： AMMONO Sp. z o.o. , Nichia Corporation
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo, c/o NICHIA CORPORATION
IPC分类号： C30B29/38
CPC分类号： C30B29/403 , C30B7/00 , C30B7/10
摘要： A method of manufacturing aluminum nitride bulk single crystal for providing aluminum nitride bulk single crystal by using supercritical ammonia by an autoclave (1) for producing supercritical solvent having a convection controller (2) installed therein, comprising the steps of forming the supercritical solvent containing alkali metal ion in the autoclave, dissolving feed stock in the solvent to produce supercritical solution, and crystallizing aluminum nitride on a seed surface simultaneously or individually, wherein the autoclave is loaded in a furnace unit (4) having a heating device (5) or a cooling device (6), whereby, since the crystallization of the bulk single crystal of the aluminum nitride thus obtained is excellent, the bulk single crystal can be applied as an optical element substrate such as a laser diode utilizing a nitride semiconductor.

3. 发明授权

EP1581675B1 A TEMPLATE TYPE SUBSTRATE AND A METHOD OF PREPARING THE SAME 有权
标题翻译：模板状的基板及其制造方法
公开(公告)号：EP1581675B1
公开(公告)日：2009-10-14
申请号：EP03778842.9
申请日：2003-12-11
申请人： AMMONO Sp. z o.o. , Nichia Corporation
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo, c/o NICHIA CORPORATION
IPC分类号： C30B25/02 , C30B25/18 , H01L21/205
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0245 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02628 , H01L21/02636 , Y10T428/266
摘要： The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.

4. 发明公开

EP1769105A1 BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE AND ITS APPLICATION 失效转让
标题翻译：块状单晶氮化镓及其制造方法
公开(公告)号：EP1769105A1
公开(公告)日：2007-04-04
申请号：EP05751252.7
申请日：2005-06-10
申请人： AMMONO Sp. z o.o. , Nichia Corporation
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo , KUCHARSKI, Robert
IPC分类号： C30B9/00 , C30B29/00
CPC分类号： C30B9/00 , C30B29/406
摘要： Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15m, more preferably longer than 30m, and most preferably of about 70m, considerably longer than the curvature radius of the crystalline lattice of the seed.

5. 发明公开

EP1590509A1 PROCESS FOR OBTAINING OF BULK MONOCRYSTALLLINE GALLIUM-CONTAINING NITRIDE 有权转让
标题翻译：用于生产固体单晶镓包含氮化物
公开(公告)号：EP1590509A1
公开(公告)日：2005-11-02
申请号：EP03778841.1
申请日：2003-12-11
申请人： AMMONO Sp. z o.o. , Nichia Corporation
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo,NICHIA CORPORATION
IPC分类号： C30B9/00 , C30B29/40
CPC分类号： C30B29/403 , C30B7/00 , C30B7/005 , C30B29/406
摘要： A process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride has been now proposed. According to the invention, the process for obtaining of mono-crystalline gallium-containing nitride from the gallium-containing feedstock in a supercritical ammonia-containing solvent with mineralizer addition is characterized in that the feedstock is in the form of metallic gallium and the mineralizer is in the form of elements of Group I and/or their mixtures, and/or their compounds, especially those containing nitrogen and/or hydrogen, whereas the ammonia-containing solvent is in the form of the mineralizer and ammonia, there are two temperature zones in each step of the process, and the feedstock is placed in the dissolution zone, and at least one mono-crystalline seed is deposited in the crystallization zone, and following the transition of the solvent to the supercritical state, the process comprises the first step of transition of the feedstock from the metallic form to the polycrystalline gallium-containing nitride, and the second step of crystallization of the gallium-containing nitride through gradual dissolution of the feedstock and selective crystallization of gallium-containing nitride on at least one mono-crystalline seed at the temperature higher than that of the dissolution of the feedstock, while all the vital components of the reaction system (including the feedstock, seeds and mineralizer) invariably remain within the system throughout the whole process, and consequently bulk mono-crystalline gallium-containing nitride is obtained. The invention relates also the the post-treatment (slicing, annealing and washing) of the thus obtained crystals.The improved process and the bulk monocrystals obtained thereby are intended mainly for use in the field of opto-electronics.

6. 发明公开

EP1581675A1 A TEMPLATE TYPE SUBSTRATE AND A METHOD OF PREPARING THE SAME 有权
标题翻译：模板状的基板及其制造方法
公开(公告)号：EP1581675A1
公开(公告)日：2005-10-05
申请号：EP03778842.9
申请日：2003-12-11
申请人： AMMONO Sp. z o.o. , Nichia Corporation
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo,c/o NICHIA CORPORATION
IPC分类号： C30B25/02 , C30B25/18 , H01L21/205
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0245 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02628 , H01L21/02636 , Y10T428/266
摘要： The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.

7. 发明公开

EP1576210A1 A SUBSTRATE FOR EPITAXY AND A METHOD OF PREPARING THE SAME 失效
标题翻译：衬底为外延和方法及其
公开(公告)号：EP1576210A1
公开(公告)日：2005-09-21
申请号：EP03778843.7
申请日：2003-12-11
申请人： AMMONO Sp. z o.o.
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo,c/o NICHIA CORPORATION
IPC分类号： C30B25/02 , C30B25/18 , H01L21/205
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0245 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02628 , H01L21/02636 , Y10T428/266
摘要： The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respectively and the dislocation density of the substrate is 5 ~105/cm2 or less.Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.

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