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2. 发明公开

EP2065489A1 PROCESS FOR PRODUCING GaN SINGLE-CRYSTAL, GaN THIN-FILM TEMPLATE SUBSTRATE AND GaN SINGLE-CRYSTAL GROWING APPARATUS 审中-公开
标题翻译：用于生产GaN单晶，甘DÜNNFILMTEMPLATSUBSTRAT和装置用于牵引甘单晶
公开(公告)号：EP2065489A1
公开(公告)日：2009-06-03
申请号：EP07807346.7
申请日：2007-09-14
申请人： Nippon Mining & Metals Co., Ltd.
发明人： MORIOKA, Satoru , TAKAKUSAKI, Misao , SHIMIZU, Takayuki
IPC分类号： C30B29/38 , C23C16/34 , C30B25/14 , H01L21/205
CPC分类号： C30B25/14 , C30B25/20 , C30B29/406 , H01L21/0242 , H01L21/0254 , H01L21/0262
摘要： Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN thick film with a fine property; and a GaN single crystal growing apparatus. Provided is a manufacturing method of a GaN single crystal by a hydride vapor phase epitaxy, wherein the hydride vapor phase epitaxy comprises: spraying HCl (hydrogen chloride) onto Ga (gallium) which is heated and fused in a predetermined temperature to generate GaCl (gallium chloride); and forming a GaN thin film by a reaction of the generated GaCl (gallium chloride) with NH 3 (ammonia) gas which is hydroxide gas on a substrate, the manufacturing method comprising supplying the NH 3 gas in a vicinity of the substrate (for example, at a position which is separated from the substrate by a distance of 0.7-4.0 times as longer than a diameter of the substrate) through a nozzle. Further, as the substrate, an NGO(011) substrate in which the lattice constant thereof is similar to that of GaN is used.
摘要翻译：本发明提供一种GaN单晶在可控制的GaN单晶的膜厚精确地设定，即使当氢化物气相外延中的应用的制造方法; 的GaN薄膜模板衬底的所有其适合于具有细属性生长GaN厚膜; 和GaN单晶生长装置。提供了一种通过氢化物气相外延，worin的氢化物气相外延包括GaN单晶的制造方法：喷涂的HCl（氯化氢），进入Ga（镓），所有这些被加热并在规定的温度熔融，以产生的GaCl（镓氯化物）; 并用NH 3（氨），形成由所产生的GaCl（氯化镓）的反应的GaN薄膜的气体的所有这是对一个基板氢氧化物气体，该制造方法包括在所述衬底的附近供给的NH 3气体（例如中，在所有的位置是从基板通过的0.7〜4.0倍的距离比作为一个直径基片的）通过一个喷嘴更长分离。另外，作为底物，NGO（011）衬底，其中晶格常数是类似于做GaN构成被使用。

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