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71. 发明公开

EP2903023A1 Power semiconductor module 审中-公开
标题翻译： Leistungshalbleitermodul
公开(公告)号：EP2903023A1
公开(公告)日：2015-08-05
申请号：EP15152976.5
申请日：2015-01-29
申请人： Hitachi Power Semiconductor Device, Ltd.
发明人： Motowaki, Shigehisa , Houzouji, Hiroshi , Morita, Toshiaki , Konno, Akitoyo
IPC分类号： H01L23/49 , H01L23/373 , H01L25/07
CPC分类号： H01L25/18 , H01L23/36 , H01L23/3675 , H01L23/49838 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L25/072 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0603 , H01L2224/29101 , H01L2224/29339 , H01L2224/29347 , H01L2224/32225 , H01L2224/32227 , H01L2224/45014 , H01L2224/45015 , H01L2224/45032 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48106 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4846 , H01L2224/48472 , H01L2224/48491 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4903 , H01L2224/49107 , H01L2224/49111 , H01L2224/49113 , H01L2224/73265 , H01L2224/83424 , H01L2224/83447 , H01L2224/83801 , H01L2224/8384 , H01L2224/85205 , H01L2224/85424 , H01L2224/85447 , H01L2924/00011 , H01L2924/10253 , H01L2924/10272 , H01L2924/1203 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/2076 , H01L2924/014 , H01L2924/00 , H01L2224/83205
摘要： To provide a power semiconductor module that can efficiently cool a high-heat-generating portion of a transistor device and has excellent connection reliability of a wiring bonding portion. A power semiconductor module includes: a heat sink (1); a circuit board connected to the heat sink (1) via a bondingmaterial and formed with a wiring on a front surface of an insulating substrate (2); a transistor device (5) including a main electrode (6) and a control electrode (7) formed on one surface and a back surface electrode formed on the other surface, the back surface electrode being connected to the circuit board via a bonding material; a first conductive member (10) bonded to the main electrode (6) via a bonding material; and wire or ribbon-shaped connection terminals (11) and (12) that electrically connect the first conductive member (10) and the control electrode (7) with another device or the circuit board, wherein the control electrode (7) is disposed at a corner portion of the main electrode (6), and the first conductive member (10) has a shape in which the first conductive member is cut out at a portion above the control electrode (7).
摘要翻译：提供能够有效地冷却晶体管器件的高发热部分并且具有优异的布线接合部分的连接可靠性的功率半导体模块。功率半导体模块包括：散热器（1）; 电路板，经由接合材料连接到散热器（1），并在绝缘基板（2）的前表面上形成有布线; 包括形成在一个表面上的主电极（6）和控制电极（7）和形成在另一个表面上的背面电极的晶体管器件（5），所述背面电极通过接合材料连接到所述电路板; 经由接合材料接合到主电极（6）的第一导电构件（10）; 以及将第一导电构件（10）和控制电极（7）与另一装置或电路基板电连接的线状或带状连接端子（11）和（12），其中控制电极（7）主电极（6）的角部，第一导电部件（10）具有在控制电极（7）的上方切断第一导电部件的形状。

73. 发明公开

EP2843692A1 SEMICONDUCTOR DEVICE FABRICATION METHOD, THERMALLY INSULATED LOAD JIG, AND THERMALLY INSULATED LOAD JIG MOUNTING METHOD 审中-公开
标题翻译：法半导体元件，隔热LOAD SPAN设备及其安装方法隔热LOAD JIG
公开(公告)号：EP2843692A1
公开(公告)日：2015-03-04
申请号：EP13782144.3
申请日：2013-04-24
申请人： Nissan Motor Co., Ltd
发明人： TANIMOTO, Satoshi , ZUSHI, Yusuke , MURAKAMI, Yoshinori , MATSUI, Kohei , SATO, Shinji , FUKUSHIMA, Yu
IPC分类号： H01L21/52 , H05K13/04
CPC分类号： H01L24/83 , B23K37/0426 , H01L24/05 , H01L24/29 , H01L24/75 , H01L24/97 , H01L2224/04026 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/2732 , H01L2224/291 , H01L2224/29118 , H01L2224/29144 , H01L2224/75101 , H01L2224/75305 , H01L2224/7531 , H01L2224/75314 , H01L2224/75315 , H01L2224/75317 , H01L2224/7532 , H01L2224/75756 , H01L2224/7598 , H01L2224/75981 , H01L2224/83022 , H01L2224/83048 , H01L2224/83075 , H01L2224/83101 , H01L2224/832 , H01L2224/83211 , H01L2224/83444 , H01L2224/83447 , H01L2224/83801 , H01L2224/83815 , H01L2224/97 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/1037 , H01L2924/1067 , H01L2924/12032 , H01L2924/12036 , H01L2924/13062 , H01L2924/13091 , H01L2924/15724 , H01L2924/15747 , H01L2924/15787 , H01L2924/3656 , H05K3/34 , H05K3/3431 , H05K13/0465 , H05K2203/0195 , H05K2203/0278 , H01L2924/00 , H01L2924/0542 , H01L2924/0103 , H01L2924/00014 , H01L2924/01042 , H01L2924/01032 , H01L2924/01014 , H01L2924/01013 , H01L2224/05655 , H01L2224/83 , H01L2924/00012
摘要： In a heat insulating load jig 11 of the present invention, a solder material 14 having a melting point or a solidus temperature in a range between a thermal resistance temperature of a semiconductor chip 13 and a temperature 100°C below the thermal resistance temperature is interposed between a circuit board 12 and the semiconductor chip 13; a heat insulating body 17 is placed on an upper side of the semiconductor chip 13 in this state; a metal weight 16 is disposed on the heat insulating body 17; and load is applied to the semiconductor chip 13 while the solder material 14 is melted and solidified.
摘要翻译：在本发明中，具有在半导体芯片13的热电阻温度和温度100℃以下的热电阻温度之间的范围内的熔点或固相线温度的焊料材料14的热绝缘负荷夹具11夹一电路板12和半导体芯片13之间; 隔热体17在这种状态下，半导体芯片13的上侧被置于; 金属重物16设置在绝热体17; 并且在焊接材料14被熔融固化负载被施加到半导体芯片13。

74. 发明公开

EP2732967A4 LAYERED BODY AND MANUFACTURING METHOD FOR LAYERED BODY 审中-公开
标题翻译：层体和方法层体
公开(公告)号：EP2732967A4
公开(公告)日：2015-02-18
申请号：EP12810573
申请日：2012-07-11
申请人： NHK SPRING CO LTD
发明人： YAMAUCHI YUICHIRO , HIRANO SATOSHI , SAITO SHINJI , HANAMACHI TOSHIHIKO
IPC分类号： B32B15/04 , B05D1/12 , C04B37/02 , C23C24/04 , C23C28/02 , H01L21/48 , H01L23/373 , H01L23/498 , H05K1/03 , H05K3/14 , H05K3/38
CPC分类号： B32B15/04 , B05D1/12 , C04B37/026 , C04B2237/121 , C04B2237/126 , C04B2237/128 , C04B2237/34 , C04B2237/341 , C04B2237/343 , C04B2237/346 , C04B2237/348 , C04B2237/366 , C04B2237/368 , C04B2237/402 , C04B2237/706 , C23C24/04 , C23C28/02 , C23C28/30 , H01L21/4846 , H01L23/3735 , H01L23/498 , H01L2224/291 , H01L2224/32225 , H01L2224/83447 , H01L2924/1305 , H01L2924/13055 , H05K1/0306 , H05K3/14 , H05K3/38 , H05K2201/0341 , H05K2201/0355 , H05K2203/1344 , Y10T428/12056 , H01L2924/014 , H01L2924/00
摘要： When a laminated body having a metal film formed on a ceramic base member is manufactured by using a cold spraying method, a laminated body having a high adhesion strength between a ceramic and the metal film and a method of manufacturing such a laminated body are provided. The laminated body includes a ceramic base member 10 having an insulating property, an intermediate layer 50 including metal or alloy as a main component formed on a surface of the ceramic base member 10, and a metal film layer (a circuit layer 20 and a cooling fin 40) formed on a surface of the intermediate layer 50 by accelerating a powder of metal or alloy with a gas and spraying and depositing the powder on the surface of the intermediate layer 50 as the powder is in a solid state.

75. 发明公开

EP2800129A1 JUNCTION STRUCTURE 审中-公开
标题翻译： VERBINDUNGSSTRUKTUR
公开(公告)号：EP2800129A1
公开(公告)日：2014-11-05
申请号：EP12862148.9
申请日：2012-12-26
申请人： Panasonic Corporation
发明人： NAKAMURA, Taichi , KITAURA, Hidetoshi
IPC分类号： H01L21/52 , B23K35/14 , H05K3/34
CPC分类号： H01L24/05 , B23K35/0261 , B23K35/0272 , B23K35/22 , B23K35/264 , B23K35/302 , H01L23/488 , H01L23/492 , H01L23/49513 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/04042 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/2712 , H01L2224/27334 , H01L2224/29083 , H01L2224/29111 , H01L2224/29139 , H01L2224/29147 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83065 , H01L2224/83101 , H01L2224/83192 , H01L2224/83201 , H01L2224/83411 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8381 , H01L2224/83986 , H01L2924/00014 , H01L2924/01322 , H01L2924/01327 , H01L2924/12042 , H01L2924/203 , H01L2924/3025 , H01L2924/351 , H01L2924/3512 , H01L2924/35121 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2924/01083 , H01L2224/8321 , H01L2924/0002
摘要： A mounted structure includes an electrode of a substrate, an electrode of a semiconductor element, and a mounted layers for bonding the electrode of the substrate and the electrode of the semiconductor element, and the mounted layers includes: a first intermetallic compound layer containing a CuSn-based intermetallic compound; a Bi layer; a second intermetallic compound layer containing a CuSn-based intermetallic compound; a Cu layer; and a third intermetallic compound layer containing a CuSn-based intermetallic compound, and the above layers are sequentially arranged from the electrode of the substrate toward the electrode of the semiconductor element to configure the mounted layers.
摘要翻译：安装结构包括基板的电极，半导体元件的电极和用于接合基板的电极和半导体元件的电极的安装层，并且安装的层包括：含有CuSn的第一金属间化合物层基金属间化合物; 铋层包含CuSn基金属间化合物的第二金属间化合物层; 铜层; 以及含有CuSn系金属间化合物的第三金属间化合物层，并且从基板的电极朝向半导体元件的电极依次配置上述层，以构成安装层。

76. 发明公开

EP2782124A1 Power semiconductor mounting 审中-公开
标题翻译： Leistungshalbleitermontage
公开(公告)号：EP2782124A1
公开(公告)日：2014-09-24
申请号：EP13159954.0
申请日：2013-03-19
申请人： ABB Technology AG
发明人： Dugal, Franc
IPC分类号： H01L21/60 , H01L23/488
CPC分类号： H01L24/29 , H01L24/83 , H01L2224/29083 , H01L2224/32225 , H01L2224/32245 , H01L2224/8284 , H01L2224/83101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83825 , H01L2224/8384 , H01L2924/157 , H01L2924/15787 , H01L2924/00014
摘要： The present invention provides a method for forming a joint (13) between a high power semiconductor (11) and a metallization of a substrate (12), comprising the steps of providing an electrically conducting preform (14), bonding the preform (14) onto the substrate (12), thereby forming a first bonding layer (15) between the substrate (12) and the preform (14), and bonding the high power semiconductor (11) onto the preform (14), thereby forming a second bonding layer (16) between the preform (14) and the high power semiconductor (11). The present invention further provides a method for mounting a high power semiconductor (11) onto a metallization of a substrate (12), comprising the step of forming a joint (13) according to the above method between the high power semiconductor (11) and the substrate (12). Still further, the invention provides a joint (13) between a high power semiconductor (11) and a metallization of a substrate (12), whereby the joint (13) is formed according to the above method as well as an assembly (10) comprising a high power semiconductor (11) and a substrate (12), whereby the substrate (12) comprises a metallization and the high power semiconductor (11) is mounted to the metallization with a joint (13) formed according to the above method.
摘要翻译：本发明提供了一种用于在大功率半导体（11）和基板（12）的金属化之间形成接头（13）的方法，包括以下步骤：提供导电预成型件（14），将预型件（14）到基板（12）上，从而在基板（12）和预成型件（14）之间形成第一粘合层（15），并将大功率半导体（11）接合到预成型件（14）上，从而形成第二接合在预成型件（14）和高功率半导体（11）之间的层（16）。本发明还提供一种将大功率半导体（11）安装在基板（12）的金属化上的方法，其特征在于，包括在大功率半导体（11）与高功率半导体（11）之间形成根据上述方法的接头（13）基板（12）。此外，本发明提供了在大功率半导体（11）和基板（12）的金属化之间的接头（13），由此根据上述方法形成接头（13）以及组件（10）包括高功率半导体（11）和衬底（12），由此衬底（12）包括金属化，并且高功率半导体（11）通过根据上述方法形成的接头（13）安装到金属化。

77. 发明公开

EP2761650A2 SCHICHTVERBUND ZUM VERBINDEN VON ELEKTRONISCHEN BAUTEILEN UMFASSEND EINE AUSGLEICHSSCHICHT, ANBINDUNGSSCHICHTEN UND VERBINDUNGSSCHICHTEN 审中-公开
标题翻译：复合层连接电子组件，包括补偿层，高层的连接与连接层
公开(公告)号：EP2761650A2
公开(公告)日：2014-08-06
申请号：EP12774969.5
申请日：2012-09-20
申请人： Robert Bosch GmbH
发明人： WOLDE-GIORGIS, Daniel
IPC分类号： H01L23/367 , H01L23/373 , H01L23/488 , H01L21/60
CPC分类号： H01L24/29 , B23K35/0238 , B23K35/30 , H01L21/6836 , H01L23/3735 , H01L23/49513 , H01L24/27 , H01L24/83 , H01L2221/68354 , H01L2224/27003 , H01L2224/271 , H01L2224/2712 , H01L2224/2731 , H01L2224/27318 , H01L2224/2732 , H01L2224/27436 , H01L2224/27505 , H01L2224/27848 , H01L2224/2908 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/2918 , H01L2224/29224 , H01L2224/29387 , H01L2224/83101 , H01L2224/83192 , H01L2224/832 , H01L2224/83201 , H01L2224/83203 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83464 , H01L2224/83469 , H01L2224/8384 , H01L2924/01029 , H01L2924/15747 , H01L2924/15787 , H01L2924/351 , H01L2924/01023 , H01L2924/01015 , H01L2924/01042 , H01L2924/04642 , H01L2924/0461 , H01L2924/00 , H01L2924/3512
摘要： The present invention relates to a layer composite (10), more particularly for connecting electronic components (11, 12) comprising at least one compensation layer (40), at least two linking layers (30) and at least two connection layers (20), wherein the compensation layer (40) is formed from aluminium or molybdenum, an aluminium or molybdenum alloy, from a metal-matrix material composed of aluminium and silicon carbide or composed of aluminium and copper-carbon, or from a copper-molybdenum alloy, wherein a linking layer (30) composed of silver is in each case applied on at least two opposite sides of the compensation layer (40), and wherein a connection layer (20) is in each case applied on the linking layers (30), wherein the connection layers (20) are formed from sinterable and/or sintered metal powder. The invention furthermore relates to a method for forming a layer composite (10) according to the invention, and to a circuit arrangement (100) containing a layer composite (10) according to the invention.

78. 发明公开

EP2661777A2 PACKAGING PHOTON BUILDING BLOCKS HAVING ONLY TOP SIDE CONNECTIONS IN AN INTERCONNECT STRUCTURE 有权
标题翻译：光子块体与网状结构ONLY顶侧连接封装
公开(公告)号：EP2661777A2
公开(公告)日：2013-11-13
申请号：EP12732251.9
申请日：2012-01-09
申请人： Bridgelux, Inc.
发明人： WEST, R., Scott
IPC分类号： H01L33/48 , H01L33/62
CPC分类号： H01L33/62 , H01L24/29 , H01L24/48 , H01L24/73 , H01L25/0753 , H01L33/486 , H01L33/644 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83447 , H01L2224/85447 , H01L2924/00014 , H01L2924/01079 , H01L2924/01087 , H01L2924/07811 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0066 , H05K1/021 , H05K3/0061 , H05K2201/09145 , H05K2201/09845 , H05K2201/10106 , H05K2201/10409 , H01L2924/0665 , H01L2224/45099 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： Standardized photon building blocks are used to make both discrete light emitters as well as array products. Each photon building block has one or more LED chips mounted on a substrate. No electrical conductors pass between the top and bottom surfaces of the substrate. The photon building blocks are supported by an interconnect structure that is attached to a heat sink. Landing pads on the top surface of the substrate of each photon building block are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self- align within the interconnect structure. Conductors on the interconnect structure are electrically coupled to the LED dice in the photon building blocks through the contact pads and landing pads. The bottom surface of the interconnect structure is coplanar with the bottom surfaces of the substrates of the photon building blocks.

79. 发明公开

EP2584602A1 PACKAGE STRUCTURE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR REPAIRING PACKAGE STRUCTURE 有权
标题翻译： VERPACKUNGSSTRUKTUR UND VERFAHREN ZU IHRER HERSTELLUNG
公开(公告)号：EP2584602A1
公开(公告)日：2013-04-24
申请号：EP11795320.8
申请日：2011-04-07
申请人： Panasonic Corporation
发明人： KOWADA, Hiroe , YAMAGUCHI, Atsushi
IPC分类号： H01L23/29 , H01L21/60 , H01L23/31
CPC分类号： H01L23/293 , H01L21/56 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/98 , H01L2224/2732 , H01L2224/291 , H01L2224/29111 , H01L2224/29294 , H01L2224/293 , H01L2224/2939 , H01L2224/3201 , H01L2224/32013 , H01L2224/32058 , H01L2224/32059 , H01L2224/32225 , H01L2224/83192 , H01L2224/8321 , H01L2224/83447 , H01L2224/83815 , H01L2224/83951 , H05K3/284 , H05K3/288 , H05K3/3489 , H05K2203/0228 , H05K2203/0264 , H05K2203/176 , H01L2924/014 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029
摘要： A package structure including an electronic component 2 mounted on a circuit board 1 with a bonding metal 3, wherein a flux 4 contains a compound having a hydroxyl group and remains on the surface of the bonding metal 3, a coating resin 5 contains 10% to 50% by weight of isocyanate, and a reactant 8 of the coating resin 5 and the flux 4 is formed at an interface between the flux 4 and the coating resin 5. Water resistance and moisture resistance can be obtained without cleaning the flux 4. The coating resin 5 can be easily peeled off at a temperature not lower than the glass transition point temperature of the flux 4.
摘要翻译：一种封装结构，包括安装在具有接合金属3的电路板1上的电子部件2，其中焊剂4含有具有羟基的化合物并保留在接合金属3的表面上，涂布树脂5含有10％至 50重量％的异氰酸酯，并且涂料树脂5和助熔剂4的反应物8形成在助熔剂4和涂料树脂5之间的界面处。可以在不洗涤助焊剂4的情况下获得耐水性和耐湿性。涂布树脂5可以在不低于焊剂4的玻璃化转变点温度的温度下容易地剥离。

80. 发明公开

EP2572814A1 Paste und Verfahren zum Verbinden von elektronischem Bauelement mit Substrat 有权
标题翻译：酱和Verfahren zum Verbinden von elektronischem Bauelement mit Substrat
公开(公告)号：EP2572814A1
公开(公告)日：2013-03-27
申请号：EP11007634.6
申请日：2011-09-20
申请人： Heraeus Materials Technology GmbH & Co. KG
发明人： Schäfer, Michael , Schmitt, Wolfgang , Heilmann, Albert , Nachreiner, Jens
IPC分类号： B22F1/00 , B23K35/02 , B23K35/36 , H01L21/48
CPC分类号： B22F1/0074 , B22F7/08 , B23K35/025 , B23K35/3006 , B23K35/3618 , H01B1/22 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05618 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/2732 , H01L2224/2741 , H01L2224/27418 , H01L2224/27422 , H01L2224/27848 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/83192 , H01L2224/83418 , H01L2224/83424 , H01L2224/83447 , H01L2224/83455 , H01L2224/8384 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/15787 , H01L2924/01327 , H01L2924/00 , H01L2924/00014
摘要： Die Erfindung stellt eine Paste bereit, mit der es möglich ist, wenigstens ein elektronisches Bauelement mit wenigstens einem Substrat über Kontaktbereiche zu verbinden, wobei wenigstens einer dieser Kontaktbereiche ein unedles Metall enthält.
Diese Paste enthält (a) Metallpartikel, (b) wenigstens einen Aktivator, der wenigstens zwei Carbonsäure-Einheiten im Molekül trägt, und (c) ein Dispersionsmedium.
摘要翻译：糊状物包括：金属颗粒; 至少一种在其分子中具有至少两个羧酸单元的活化剂; 和分散介质。包括独立权利要求，用于通过接触区域将至少一个电子部件连接到至少一个基板，所述接触区域包括：提供具有第一接触区域的基板和具有第二接触区域的电子部件，其中接触区域包含非贵金属 ; 提供糊状物产生结构，其中所述基板的第一接触区域通过所述浆料接触所述电子部件的第二接触区域; 以及烧结所述结构，同时通过所述烧结膏生产包括所述基板和所述电子部件的模块。

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