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1. 发明授权

EP2534680B1 COMPONENT PLACEMENT ON STRETCHABLE SUBSTRATES 有权
公开(公告)号：EP2534680B1
公开(公告)日：2018-12-05
申请号：EP11704332.3
申请日：2011-02-09
申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO
发明人： KOETSE, Marinus, Marc , SCHOO, Harmannus, Franciscus, Maria , DE KOK, Margaretha, Maria
IPC分类号： H05K3/32 , H01L23/00 , H01L25/065 , H01L25/00 , H05K1/18 , H05K3/10 , H05K3/30 , H05K1/02
CPC分类号： H05K13/00 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L25/0655 , H01L25/50 , H01L2224/27505 , H01L2224/27515 , H01L2224/29076 , H01L2224/29139 , H01L2224/29147 , H01L2224/2919 , H01L2224/2929 , H01L2224/29393 , H01L2224/32225 , H01L2224/83192 , H01L2224/83862 , H01L2224/83874 , H01L2924/01029 , H01L2924/12042 , H01L2924/12043 , H01L2924/12044 , H05K1/0283 , H05K1/189 , H05K3/105 , H05K3/303 , H05K3/32 , H05K3/323 , H05K2201/0133 , H05K2203/1545 , Y02P70/613 , Y10T156/10 , Y10T156/1052 , Y10T156/1158 , Y10T156/1195 , H01L2924/00014 , H01L2924/01006 , H01L2924/0665 , H01L2924/00
摘要： According to one aspect, the invention provides a method of placement of a component on a stretchable substrate, comprising the steps of providing a base substrate having a stretchable substrate layer, providing a flexible foil comprising an integral arrangement (20) of a multiple of flexible foil components; the flexible foil components each comprising component pads for electro/optical access to the flexible foil components, providing in plane interconnecting traces on the stretchable substrate layer in correspondence with the component pads in the integral arrangement; aligning the base substrate and the flexible foil so as to be used in a reel based manufacturing process; providing, through lamination of the base substrate and the flexible foil an electro/optical via connection between the traces and the component pads of the integral component arrangement; and mechanically separating the integral arrangement of flexible foil components to provide a multiple of mechanically separated components from each other to arrange an electro/optical interconnected component system on a stretchable substrate layer One advantage of the invention is that it may be used in a manufacturing process for multi-foil systems.

2. 发明公开

EP2498283A3 Verfahren zur Herstellung eines Leistungshalbleitersubstrates 有权
标题翻译：制造功率半导体衬底的方法
公开(公告)号：EP2498283A3
公开(公告)日：2017-07-05
申请号：EP12154199.9
申请日：2012-02-07
申请人： SEMIKRON Elektronik GmbH & Co. KG
发明人： Dr. Besendörfer, Kurt-Georg , Erdner, Nadja
IPC分类号： H01L21/48 , H01L23/373
CPC分类号： H01L21/4867 , H01L23/3735 , H01L24/27 , H01L24/29 , H01L24/83 , H01L24/97 , H01L25/072 , H01L2224/27003 , H01L2224/27334 , H01L2224/27505 , H01L2224/32225 , H01L2224/83193 , H01L2224/83201 , H01L2224/8384 , H01L2924/00013 , H01L2924/01029 , H01L2924/1301 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： Es wird ein Verfahren zur Herstellung eines Leistungshalbleitersubstrates (30) mit den folgenden Verfahrensschritten beschrieben:
- Beschichten mindestens einer Teilfläche (12, 14) eines flächigen Vorsinterträgers (10) mit einer Sinterpaste (16),
- Anordnen eines Verbindungsflächenobjektes (18) auf der Teilfläche (12, 14) der getrockneten Sinterpaste- (16),
- Druck-Beaufschlagung des Gebildes (20) aus dem mit der Sinterpaste (16) versehenen Vorsinterträger (10) und dem Verbindungsflächenobjekt (18) während einer kurzen Zeitspanne, so dass die Haftkraft zwischen der Sinterpaste (16) und dem Verbindungsflächenobjekt (18) größer wird als die Haftkraft zwischen der Sinterpaste (16) und dem Vorsinterträger (10),
- Entfernen des Vorsinterträgers (10) von dem die Sinterpaste (16) aufweisenden Verbindungsflächenobjekt (18), wobei sich ein Halbzeug (22) ergibt,
- Anordnen des Halbzeugs (22) auf einem isolierenden Grundkörper (24), wobei die Sinterpaste (16) dem flächigen Grundkörper (24) zugewandt ist, und
- Sinter-Beaufschlagung des Gebildes (26) aus dem Halbzeug (22) und dem flächigen Grundkörper (24) mit Druck und erhöhter Temperatur während einer längeren Sinterzeitspanne zur Ausbildung des Leistungshalbleitersubstrates (30).
摘要翻译：一种用于生产具有下面描述的以下步骤的功率半导体基片（30）的方法： - 片材的涂层的至少一部分表面（12，14）预烧结具有烧结膏（16）的支撑体（10）， - 布置所述部分表面上的连接表面的对象（18）（12，14）中的干燥Sinterpaste-（16）的， - 预烧结载体提供在短时间内从所述结构（20），以在烧结膏（16）（10）和所述连接面对象（18）的压力加载，从而使粘合力烧结膏（16）与连接面对象（18）比所述烧结膏（16）和预烧结载体（10）之间的粘合力更大之间， - 去除所述预烧结具有所述支承件（10），从该烧结膏（16）的连接面对象（18），（22）; - 将半成品（22）布置在绝缘基体（24）上，其中烧结膏（16）为平坦的Grundk 体侧（24），以及 - 从所述半成品（22）和所述管状主体（24）的压力和升高的温度下对用于形成功率半导体衬底（30）更长的烧结时间期间所述织物（26）烧结行为。

3. 发明公开

EP2645408A4 BINDING MATERIAL, BINDING BODY, AND BINDING METHOD 有权
标题翻译：装订材料，装订BODY和约束力
公开(公告)号：EP2645408A4
公开(公告)日：2016-06-08
申请号：EP11842826
申请日：2011-05-13
申请人： DOWA ELECTRONICS MATERIALS CO
发明人： KURITA SATORU , ENDOH KEIICHI , SAITO YU , HISAEDA YUTAKA , UEYAMA TOSHIHIKO
IPC分类号： H01L21/60 , B22F1/00 , B23K1/00 , B23K20/00 , B23K35/02 , B23K101/36 , B32B3/26 , B32B15/01 , H01L23/00 , H05K3/32
CPC分类号： B23K31/02 , B22F1/0014 , B22F1/0062 , B22F1/0096 , B22F2999/00 , B23K1/0016 , B23K20/00 , B23K35/025 , B23K2201/36 , B32B3/26 , B32B15/018 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05639 , H01L2224/27318 , H01L2224/2732 , H01L2224/27505 , H01L2224/2929 , H01L2224/29294 , H01L2224/29339 , H01L2224/2939 , H01L2224/2949 , H01L2224/32225 , H01L2224/83075 , H01L2224/83192 , H01L2224/83204 , H01L2224/83439 , H01L2224/83801 , H01L2224/8384 , H01L2224/83907 , H01L2224/83986 , H01L2924/01006 , H01L2924/01029 , H01L2924/01047 , H01L2924/10253 , H01L2924/12042 , H01L2924/1301 , H01L2924/13033 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/203 , Y10T428/12479 , H01L2224/832 , H01L2924/3512 , H01L2924/00 , H01L2924/00014 , H01L2924/0665 , B22F1/0018 , H01L2924/0002
摘要： There is provided a bonding material capable of forming a bonding body under an inert gas atmosphere such as a nitrogen atmosphere, and capable of exhibiting a bonding strength that endures a practical use even if not a heat treatment is applied thereto at a high temperature, which is the bonding material containing silver nanoparticles coated with a fatty acid having a carbon number of 8 or less and having an average primary particle size of 1nm or more and 200nm or less, and silver particles having an average particle size of 0.5µm or more and 10µm or less, and an organic material having two or more carboxyl groups.

4. 发明公开

EP2761650A2 SCHICHTVERBUND ZUM VERBINDEN VON ELEKTRONISCHEN BAUTEILEN UMFASSEND EINE AUSGLEICHSSCHICHT, ANBINDUNGSSCHICHTEN UND VERBINDUNGSSCHICHTEN 审中-公开
标题翻译：复合层连接电子组件，包括补偿层，高层的连接与连接层
公开(公告)号：EP2761650A2
公开(公告)日：2014-08-06
申请号：EP12774969.5
申请日：2012-09-20
申请人： Robert Bosch GmbH
发明人： WOLDE-GIORGIS, Daniel
IPC分类号： H01L23/367 , H01L23/373 , H01L23/488 , H01L21/60
CPC分类号： H01L24/29 , B23K35/0238 , B23K35/30 , H01L21/6836 , H01L23/3735 , H01L23/49513 , H01L24/27 , H01L24/83 , H01L2221/68354 , H01L2224/27003 , H01L2224/271 , H01L2224/2712 , H01L2224/2731 , H01L2224/27318 , H01L2224/2732 , H01L2224/27436 , H01L2224/27505 , H01L2224/27848 , H01L2224/2908 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/2918 , H01L2224/29224 , H01L2224/29387 , H01L2224/83101 , H01L2224/83192 , H01L2224/832 , H01L2224/83201 , H01L2224/83203 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83464 , H01L2224/83469 , H01L2224/8384 , H01L2924/01029 , H01L2924/15747 , H01L2924/15787 , H01L2924/351 , H01L2924/01023 , H01L2924/01015 , H01L2924/01042 , H01L2924/04642 , H01L2924/0461 , H01L2924/00 , H01L2924/3512
摘要： The present invention relates to a layer composite (10), more particularly for connecting electronic components (11, 12) comprising at least one compensation layer (40), at least two linking layers (30) and at least two connection layers (20), wherein the compensation layer (40) is formed from aluminium or molybdenum, an aluminium or molybdenum alloy, from a metal-matrix material composed of aluminium and silicon carbide or composed of aluminium and copper-carbon, or from a copper-molybdenum alloy, wherein a linking layer (30) composed of silver is in each case applied on at least two opposite sides of the compensation layer (40), and wherein a connection layer (20) is in each case applied on the linking layers (30), wherein the connection layers (20) are formed from sinterable and/or sintered metal powder. The invention furthermore relates to a method for forming a layer composite (10) according to the invention, and to a circuit arrangement (100) containing a layer composite (10) according to the invention.

5. 发明公开

EP0460286A3 Verfahren und Anordnung zum Verbinden von einem Halbleiter mit einem Substrat oder zur Nachbehandlung einer Halbleiter/Substrat-Verbindung durch berührungsfreies Pressen 失效
标题翻译：用于将基板的半导体元件连接或用于通过连续压制来完成半导体/基板连接的方法和布置
公开(公告)号：EP0460286A3
公开(公告)日：1992-02-26
申请号：EP90123453.4
申请日：1990-12-06
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Schwarzbauer, Herbert, Dr.
IPC分类号： H01L21/603
CPC分类号： H01L21/67121 , H01L21/565 , H01L24/75 , H01L24/80 , H01L24/83 , H01L2224/27505 , H01L2224/29339 , H01L2224/75305 , H01L2224/75745 , H01L2224/83002 , H01L2224/83136 , H01L2224/8319 , H01L2224/8383 , H01L2224/8384 , H01L2224/8385 , H01L2224/83907 , H01L2224/8392 , H01L2224/83951 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01082 , H01L2924/014 , H01L2924/19043
摘要： Die Erfindung betrifft Verfahren, bei denen durch ein chemisch inertes und nicht festes Medium Druck auf eine Halbleiteroberfläche (0) ausgeübt wird,wobei zum Beispiel mit Hilfe einer Abdichtung (6a) verhindert wird, daß sich ein Gegendruck in einer Zwischenschicht (2) aufbaut. Eine Verbindung zwischen dem Halbleiter (3) und dem Substrat (1) erfolgt durch Drucksintern oder durch Diffusionsschweißen. Eine Berührung zwischen einem aktivem, inneren Bereich des Halbleiters und einem Preßkolben kann dadurch vermieden werden, daß der Preßkolben einen erhabenen und ringförmigen äußeren Bereich zur Abdichtung besitzt und der eigentliche Preßdruck durch das Druckmedium über eine im Preßkolben befindliche Bohrung bewirkt wird. Dieser erhabene Rand zur Abdichtung kann sich, anstatt auf dem Preßkolben, auch auf dem Halbleiter befinden. Wird ein Halbleiterbauelement mit einer Kunststoffschmelze umspritzt, so kann diese Kunststoffschmelze selbst als Druckmedium dienen.

7. 发明公开

EP3240025A2 DIE AND SUBSTRATE ASSEMBLY WITH GRADED DENSITY SINTERED BONDING LAYER 无效
标题翻译：具有分级密度烧结粘结层的模具和衬底组件
公开(公告)号：EP3240025A2
公开(公告)日：2017-11-01
申请号：EP17165324.9
申请日：2017-04-06
申请人： Hamilton Sundstrand Corporation
发明人： Croteau, Paul F. , Burlatsky, Sergei F. , Krishnamurthy, Shashank
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/32 , H01L24/03 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/03505 , H01L2224/2731 , H01L2224/27312 , H01L2224/2732 , H01L2224/2741 , H01L2224/27505 , H01L2224/29005 , H01L2224/29017 , H01L2224/2908 , H01L2224/29082 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29164 , H01L2224/29294 , H01L2224/29311 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29369 , H01L2224/2938 , H01L2224/29384 , H01L2224/2939 , H01L2224/29393 , H01L2224/29439 , H01L2224/2949 , H01L2224/3201 , H01L2224/32053 , H01L2224/32054 , H01L2224/32055 , H01L2224/32058 , H01L2224/32225 , H01L2224/32227 , H01L2224/32245 , H01L2224/32501 , H01L2224/83055 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83203 , H01L2224/8384 , H01L2924/00014 , H01L2924/01006 , H01L2924/07802 , H01L2924/0781 , H01L2924/00012
摘要： A die and substrate assembly (10) is disclosed for a die (12) with electronic circuitry and a substrate (14). A sintered bonding layer (16, 16A) of sintered metal (e.g. silver) is disposed between the die (12) and the substrate (14). The sintered bonding layer (16, 16A) includes a plurality of zones (18, 18', 18", 20, 20', 20") having different sintered metal densities. The plurality of zones (18, 18', 18", 20, 20', 20") are distributed along one or more horizontal axes of the sintered bonding layer (16), along one or more vertical axes of the sintered bonding layer (16) or along both one or more horizontal and one or more vertical axes of the sintered bonding layer (16A).
摘要翻译：公开了一种具有电子电路和衬底（14）的管芯（12）的管芯和衬底组件（10）。烧结金属（例如银）的烧结结合层（16,16A）设置在管芯（12）和衬底（14）之间。烧结结合层（16,16A）包括具有不同烧结金属密度的多个区域（18,18'，18“，20,20'，20”）。多个区域（18,18'，18“，20,20'，20”）沿烧结层（16）的一个或多个水平轴线沿着烧结层（16）的一个或多个垂直轴线分布或者沿着烧结层（16A）的一个或多个水平轴线和一个或多个垂直轴线。

8. 发明公开

EP2960930A4 CONNECTING STRUCTURE, AND SEMICONDUCTOR DEVICE 审中-实审转让
标题翻译： VERBINDUNGSSTRUKTUR UND HALBLEITERBAUELEMENT
公开(公告)号：EP2960930A4
公开(公告)日：2017-07-12
申请号：EP14753874
申请日：2014-02-24
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SATO SHUNICHIRO , KOJIMA NAOYUKI , HIKASA KAZUHITO , AMANO TOSHIAKI
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/32 , H01L23/562 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/743 , H01L24/75 , H01L24/83 , H01L24/94 , H01L2224/04026 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/2711 , H01L2224/2732 , H01L2224/27334 , H01L2224/27505 , H01L2224/292 , H01L2224/29294 , H01L2224/29309 , H01L2224/29311 , H01L2224/29313 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29357 , H01L2224/2936 , H01L2224/29364 , H01L2224/29366 , H01L2224/29369 , H01L2224/29381 , H01L2224/29384 , H01L2224/2939 , H01L2224/29495 , H01L2224/3201 , H01L2224/32227 , H01L2224/32245 , H01L2224/75251 , H01L2224/75252 , H01L2224/7532 , H01L2224/83065 , H01L2224/83075 , H01L2224/8309 , H01L2224/83192 , H01L2224/83203 , H01L2224/83204 , H01L2224/83447 , H01L2224/8384 , H01L2224/94 , H01L2924/00015 , H01L2924/15787 , H01L2924/351 , H01L2924/3512 , H01L2924/35121 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/0665 , H01L2224/83 , H01L2224/27848
摘要： An object of the present invention is to provide a connection structure that is able to suppress cracking and peeling in a joint surfaces between a pad part on a substrate (or a lead frame) and a porous metal layer and between a semiconductor element and the porous metal layer. A connection structure (I) for connecting a rear electrode of a semiconductor element to a substrate or a lead frame, wherein a porous metal layer (C) is provided so as to come into contact with at least the rear electrode of the semiconductor element, and the ratio [(B)/(A)] of a porosity of an intermediate portion in the thickness direction of an outer peripheral side part (B) of a region further towards the outside than the cross-section part formed at a position of a distance equivalent to the thickness of the porous metal layer (C) from the side surface toward the inside, to the porosity on the center side (A) after having excluded the outer peripheral side part (B), falls within the range of 1.10 to 1.60.
摘要翻译：本发明的一个目的是提供一种连接结构，其能够抑制基板（或引线框架）上的焊盘部分与多孔金属层之间以及半导体元件与多孔层之间的接合表面中的裂缝和剥离金属层。一种连接结构（I），用于将半导体元件的背面电极连接到衬底或引线框架，其中提供多孔金属层（C）以至少与半导体元件的背面电极接触，与比形成于该位置的截面部更靠外侧的区域的外周侧部分（B）的厚度方向的中间部分的空隙率[（B）/（A）]之比[（B）/ 与排除了外周侧部分（B）之后的中心侧（A）上的多孔金属层（C）的厚度相当的距离从侧面朝向内侧落入1.10的范围内到1.60。

9. 发明公开

EP3123500A1 TRÄGER UND CLIP JEWEILS MIT SINTERBARER, VERFESTIGTER PASTE ZUR VERBINDUNG MIT EINEM HALBLEITERELEMENT, ENTSPRECHENDE SINTERPASTE UND ENTSPRECHENDES HERSTELLUNGSVERFAHREN UND VERWENDUNG 审中-公开
标题翻译： CARRIER和剪辑每个烧结，凝固粘贴到相关的半导体元件，相当于烧结物膏剂及相应方法和使用
公开(公告)号：EP3123500A1
公开(公告)日：2017-02-01
申请号：EP15713177.2
申请日：2015-03-26
申请人： Heraeus Deutschland GmbH & Co. KG
发明人： BENEDIKT, Michael , KREBS, Thomas , SCHÄFER, Michael , SCHMITT, Wolfgang , HINRICH, Andreas , KLEIN, Andreas , BRAND, Alexander , BLEIFUSS, Martin
IPC分类号： H01L21/60 , H01L23/495 , H01L23/488
CPC分类号： H01L23/49513 , H01L21/4821 , H01L23/49524 , H01L23/49548 , H01L23/49551 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/83 , H01L24/84 , H01L24/92 , H01L2224/27318 , H01L2224/2732 , H01L2224/27418 , H01L2224/27505 , H01L2224/27848 , H01L2224/29294 , H01L2224/29295 , H01L2224/29339 , H01L2224/2939 , H01L2224/32245 , H01L2224/33181 , H01L2224/352 , H01L2224/371 , H01L2224/37639 , H01L2224/4005 , H01L2224/40095 , H01L2224/40245 , H01L2224/40499 , H01L2224/73263 , H01L2224/83192 , H01L2224/83439 , H01L2224/8384 , H01L2224/8385 , H01L2224/8484 , H01L2224/8485 , H01L2224/9221 , H01L2924/181 , H01L2924/00014 , H01L2924/01047 , H01L2224/83 , H01L2224/84 , H01L2924/00012
摘要： The invention relates to a carrier (such as a lead frame) and to a clip for at least one semiconductor element which has at least one functional surface (10) for connection to the semiconductor element and a plurality of connections (11). The invention is characterized in that the material of the carrier or of the clip comprises a metal and a layer (12) made of a solidified (dried) sintering paste, in particular a sintering paste containing silver and/or a silver compound, and is arranged on the functional surface (10), wherein the carrier or clip and the layer (12) made of sintering paste form an intermediate product which can be connected to the semiconductor element. The carrier and the clip are used to produce a packaging having a lead frame (lead frame package) by connection to the chip by means of sintering of the solidified sintering pastes in one work step.
摘要翻译：载体和夹子被用来产生具有由连接到使用固化糊剂烧结的烧结在一个工作步骤中的芯片的引线框的封装。该载体可以是引线框架和用于至少一个半导体元件的夹子具有用于连接到所述半导体元件和连接的多个至少一个功能面。载体或夹子的材料包括金属和由固化的烧结膏层。烧结膏体可以包含银和/或银化合物。烧结膏被布置在功能面上。所述载体或夹在中间productsthat制成烧结膏形式的层可以被连接到所述半导体元件。

10. 发明公开

EP2428293A3 Kontaktierungsmittel und Verfahren zur Kontaktierung elektrischer Bauteile 有权转让
标题翻译：接触装置和方法用于接触电气部件
公开(公告)号：EP2428293A3
公开(公告)日：2016-08-10
申请号：EP11006863.2
申请日：2011-08-23
申请人： Heraeus Deutschland GmbH & Co. KG
发明人： Schäfer, Michael , Schmitt, Wolfgang
IPC分类号： B22F1/02 , B22F7/06 , B22F7/08 , B22F1/00 , B22F3/10
CPC分类号： B22F1/0062 , B22F1/007 , B22F1/0074 , B22F1/02 , B22F7/064 , B22F7/08 , C09D4/00 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05571 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/05669 , H01L2224/27003 , H01L2224/271 , H01L2224/27436 , H01L2224/27442 , H01L2224/27505 , H01L2224/29294 , H01L2224/29295 , H01L2224/29324 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/29369 , H01L2224/29387 , H01L2224/2939 , H01L2224/29424 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29455 , H01L2224/29464 , H01L2224/29469 , H01L2224/2949 , H01L2224/32225 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/83203 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83464 , H01L2224/83469 , H01L2224/8384 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01025 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/07811 , H01L2924/09701 , H01L2924/10253 , H01L2924/12041 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/15787 , H01L2924/01046 , H01L2924/00 , H01L2924/01028 , H01L2224/05552
摘要： Die Erfindung stellt ein Verfahren zum Verbinden wenigstens zweier Bauelemente zur Verfügung, bei dem eine Sintervorform zum Einsatz kommt. Diese umfasst einen Träger mit einer Oberfläche, die wenigstens ein Strukturelement aufweist, das verfestigte Paste enthält, wobei die verfestigte Paste
(a) Metallpartikel, die ein Coating aufweisen, das wenigstens eine organische Verbindung enthält, und
(b) wenigstens ein Sinterhilfsmittel, das aus der Gruppe ausgewählt ist, die aus (b1) organischen Peroxiden, (b2) anorganischen Peroxiden, (b3) anorganischen Säuren, (b4) Salzen von organischen Säuren, wobei die organischen Säuren 1 - 4 Kohlenstoffatome aufweisen, (b5) Estern von organischen Säuren, wobei die organischen Säuren 1 - 4 Kohlenstoffatome aufweisen, und (b6) Carbonylkomplexen besteht, enthält, und
die Oberfläche des Trägers, die die verfestigte Paste aufweist, gegenüber den Bestandteilen der Paste nicht reaktiv ist.

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