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1. 发明公开

EP3385982A1 SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：EP3385982A1
公开(公告)日：2018-10-10
申请号：EP15909815.1
申请日：2015-12-04
申请人： Renesas Electronics Corporation
发明人： FUKUCHI, Kazuhiro
IPC分类号： H01L23/28 , H01L23/48 , H01L25/07 , H01L25/18 , H01M10/44 , H02J7/00
CPC分类号： H01L23/28 , H01L23/48 , H01L24/02 , H01L25/07 , H01L25/18 , H01L2224/04105 , H01L2224/19 , H01L2224/24137 , H01L2224/24195 , H01L2224/25 , H01L2224/2518 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/19105 , H01M10/44 , H02J7/00 , H02J7/0072 , H01L2924/00012
摘要： In order to improve reliability of a semiconductor device, in a semiconductor chip according to one embodiment, an uneven shape is formed on an exposed surface of a back surface electrode formed on a back surface of the semiconductor chip.

2. 发明公开

EP3358922A1 ONBOARD CONTROL DEVICE 审中-公开
公开(公告)号：EP3358922A1
公开(公告)日：2018-08-08
申请号：EP16850912.3
申请日：2016-08-08
申请人： Hitachi Automotive Systems, Ltd.
发明人： SUZUKI Kazuhiro , ISHII Toshiaki , KAWAI Yoshio , KANEKO Yujiro
IPC分类号： H05K7/20 , B60R16/02 , H01L23/28 , H01L23/36 , H01L25/07 , H01L25/18
CPC分类号： H01L23/3675 , B29C45/14836 , B29C2045/0049 , B60R16/02 , B60R16/0231 , H01L21/565 , H01L23/04 , H01L23/28 , H01L23/3121 , H01L23/36 , H01L23/3736 , H01L24/32 , H01L25/07 , H01L25/165 , H01L25/18 , H01L2224/32245 , H05K7/20
摘要： Provided is an inexpensive and highly reliable resin sealed-type onboard electronic control device to be mounted in a vehicle such as an engine control unit and a control unit for automatic transmission, which have a heat dissipation structure for dissipating heat generated from an electronic component such as a semiconductor element to the outside of a casing. The onboard control device includes a circuit board, a member provided to face the circuit board, a heat generating electronic component mounted between the circuit board and the member, a heat dissipating material provided between the heat generating electronic component and the member, and a sealing resin to seal the circuit board and the heat generating electronic component. At a position where the heat dissipating material is not provided in a space between the member and the circuit board, a portion in which the space between the member and the circuit board is narrower than a position where the heat dissipating material is provided in a space between the member and the heat generating electronic component.

3. 发明公开

EP3344024A1 MODULE DE COMMUTATION TRIPHASÉ 审中-实审
公开(公告)号：EP3344024A1
公开(公告)日：2018-07-04
申请号：EP17210537.1
申请日：2017-12-22
申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives
发明人： LEFEVRE, Guillaume
IPC分类号： H05K7/14 , H01L25/07 , H01L27/02 , H02M3/155
CPC分类号： H02M7/003 , H01L23/13 , H01L23/49811 , H01L23/5383 , H01L23/5386 , H01L24/49 , H01L25/07 , H01L25/072 , H01L25/115 , H01L25/18 , H01L2224/49175 , H01L2924/12036 , H01L2924/13091 , H01L2924/14252 , H01L2924/15162 , H01L2924/19041 , H01L2924/19105 , H02M7/537 , H05K7/1432
摘要： L'invention concerne un module de commutation triphasé incluant trois cellules de commutation identiques, comportant chacune un premier interrupteur (M) et un deuxième interrupteur (M) électriquement en série, comportant un substrat dont : un premier niveau reçoit, sur des zones conductrices (92), des faces arrières de circuits intégrés formant lesdits interrupteurs et ; au moins un deuxième niveau comporte des zones conductrices (101) d'interconnexion de vias entre les premier et deuxième niveaux, les zones conductrices des différents niveaux respectant une symétrie de révolution d'ordre 3.

4. 发明公开

EP3331009A1 POWER MODULE 审中-公开
公开(公告)号：EP3331009A1
公开(公告)日：2018-06-06
申请号：EP16832693.2
申请日：2016-07-11
申请人： Hitachi Automotive Systems, Ltd.
发明人： HOJO, Fusao , TSUYUNO, Nobutake , ISHII, Toshiaki , KUSUKAWA, Junpei , MATSUSHITA, Akira
IPC分类号： H01L25/07 , H01L23/36 , H01L25/18
CPC分类号： H01L23/3733 , H01L23/36 , H01L23/3675 , H01L23/3677 , H01L24/73 , H01L25/07 , H01L25/18 , H01L2224/33 , H01L2224/37599 , H01L2224/40 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/1203 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2224/37099
摘要： An object of the present invention is to provide a power module capable of realizing a superior heat radiation property while satisfying a high insulation property.
A power module according to the present invention includes: a conductor plate (320) to which a switching element is connected; a heat radiation plate (307) which is disposed to face the conductor plate (320); an insulating member (900) which is disposed between the conductor plate (320) and the heat radiation plate (307); and a conductive intermediate conductor (910) which is disposed in the insulating member (900) in a state of being electrically insulated from the conductor plate (320) and the heat radiation plate (307), wherein the intermediate conductor (910) has a communication region (1101) which communicates between the insulating member (900) disposed on the side of the conductor plate (320) with respect to the intermediate conductor (910) and the insulating member (900) disposed on the side of the heat radiation plate (307) with respect to the intermediate conductor (910).

5. 发明公开

EP3331008A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF 审中-公开
公开(公告)号：EP3331008A1
公开(公告)日：2018-06-06
申请号：EP17204260.8
申请日：2017-11-29
申请人： Semiconductor Manufacturing International Corporation (Shanghai) , Semiconductor Manufacturing International Corporation (Beijing)
发明人： SONG, Chun , ZHONG, Yi
IPC分类号： H01L23/58 , H01L23/48 , H01L21/70 , H01L25/065 , H01L25/07 , H01L25/10 , H01L25/16 , H01L25/18
CPC分类号： H01L23/10 , H01L21/70 , H01L23/045 , H01L23/051 , H01L23/562 , H01L23/564 , H01L23/585 , H01L24/05 , H01L25/065 , H01L25/07 , H01L25/10 , H01L25/16 , H01L25/18
摘要： Semiconductor structures and fabrication methods thereof are provided. An exemplary semiconductor structure includes a semiconductor substrate having a device region and a protective region around the device region; a seal ring structure on the semiconductor substrate in the protective region; an electrical interconnect structure on the semiconductor substrate in the device region; an interlayer dielectric layer entirely covering the protective region on the seal ring structure and the electrical interconnect structure; a solder pad electrically connected with the electrical interconnect structure passing through a portion of the interlayer dielectric layer in the device region; a passivation layer on the interlayer dielectric layer and exposing the solder pad; and a conducive wire connected to the solder pad and across over a portion of the passivation layer in the protective region.

6. 发明公开

EP3288349A1 LEISTUNGSMODUL, MODULANORDNUNG UND VERFAHREN ZUR HERSTELLUNG EINES LEISTUNGSMODULS 审中-公开
标题翻译：功率模块，模块组件和用于制造功率模块的方法
公开(公告)号：EP3288349A1
公开(公告)日：2018-02-28
申请号：EP16185652.1
申请日：2016-08-25
申请人： Siemens Aktiengesellschaft
发明人： Bigl, Thomas , Hensler, Alexander , Neugebauer, Stephan , Pfefferlein, Stefan , Weisgerber, Volker , Wetzel, Ulrich
IPC分类号： H05K1/14 , H05K1/18 , H05K3/36 , H01L25/07 , H01L25/00
CPC分类号： H01L25/07 , H01L25/50 , H05K1/148 , H05K2201/10166
摘要： Die Erfindung betrifft ein Leistungsmodul (1) umfassend eine erste Leiterplatte (2) aufweisend eine erste Oberfläche (3) und eine der ersten Oberfläche (3) gegenüberliegend angeordnete zweite Oberfläche (4) sowie zumindest ein HalbleiterBauelement (5), welches an der ersten Oberfläche (3) angeordnet ist. Weiterhin betrifft die Erfindung eine Modulanordnung (30) aufweisend zumindest zwei derartige Leistungsmodule (1). Schließlich betrifft die Erfindung ein Verfahren zur Herstellung eines Leistungsmoduls (1).
Um verbesserte Leistungsmodule (1) bzw. Modulanordnungen (30) bereitzustellen, wird unter anderem vorgeschlagen, dass das Leistungsmodul (1) eine zweite Leiterplatte (6) aufweisend eine dritte Oberfläche (7) und eine der dritten Oberfläche (7) gegenüberliegend angeordnete vierte Oberfläche (8) sowie eine erste Flexleiterplatte (9) aufweist, wobei die erste Leiterplatte (2) und die zweite Leiterplatte (6) derart aufeinander gestapelt angeordnet sind, dass die erste Oberfläche (3) der dritten Oberfläche (7) zugewandt ist, und wobei die erste Leiterplatte (2) mit der zweiten Leiterplatte (6) mittels der ersten Flexleiterplatte (9) elektrisch kontaktiert ist.
摘要翻译：本发明涉及（1），包括第一电路板（2），包括（3）和所述第一表面中的一个（3）相对布置的第二表面（4）和至少一个半导体元件安装在所述第一表面（5）上的第一表面的功率模块（3）被安排。此外，本发明涉及包括至少两个这种功率模块（1）的模块装置（30）。最后，本发明涉及一种用于制造功率模块（1）的方法。为了提供改进的电源模块（1）或模块组件（30）中，提出特别的是电源模块（1）的第二电路板（6）包括第三表面（7）和第三表面（7）相对设置第四表面包含（8）和第一柔性印刷电路板（9），其中，所述第一电路板（2）和所述第二电路板（6）被布置成堆叠，所述第一表面（3）的第三表面（7）面向，并且其中第一电路板（2）通过第一柔性电路板（9）与第二电路板（6）电接触。

7. 发明公开

EP3258589A4 CIRCUIT MODULE AND INVERTER DEVICE USING SAME 审中-公开
公开(公告)号：EP3258589A4
公开(公告)日：2018-02-21
申请号：EP16748778
申请日：2016-02-03
申请人： PANASONIC IP MAN CO LTD
发明人： GOTO SHUSAKU , IWAMATSU YUSUKE , YOSHITAKE AKIRA
IPC分类号： H02M7/48 , H01L25/07 , H01L25/18
CPC分类号： H02M7/003 , H01L25/07 , H01L25/18 , H02M7/48 , H02M7/5387
摘要： Provided is a circuit module having less noise, and an inverter using the same. The circuit module 2 is provided with a circuit part 4, an input terminal part 5, an output terminal part 6, and a support 21. The circuit part 4 includes a conversion circuit, and a switch circuit. The output terminal part 6 includes a first output terminal 61 and a second output terminal 62 that are respectively electrically connected to a pair of output points of the circuit part 4. The arrangement of the output terminal part 6 on one surface of the support 21 is such that the first output terminal and the second output terminal are positioned around the circuit part 4 on the same side with respect to the circuit part 4, or the first output terminal and the second output terminal are adjacent to one another around the circuit part 4.

8. 发明公开

EP3116020A4 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP3116020A4
公开(公告)日：2018-02-14
申请号：EP15759174
申请日：2015-03-04
申请人： ROHM CO LTD
发明人： HAYASHI KENJI , SUZAKI AKIHIRO
IPC分类号： H01L21/52 , H01L23/29 , H01L23/31 , H01L25/07 , H01L25/18
CPC分类号： H01L25/18 , H01L23/3107 , H01L23/3121 , H01L23/36 , H01L25/07 , H01L29/7393 , H01L2224/27013 , H01L2224/33
摘要： A semiconductor device according to the present invention incudes a semiconductor chip, a conductive member for supporting the semiconductor chip, a joint material provided between the conductive member and the semiconductor chip, and a release groove formed on the surface of the conductive member and arranged away from the semiconductor chip with the one end and the other end of the release groove connected to the peripheral edges of the conductive member, respectively.

9. 发明公开

EP3240125A4 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP3240125A4
公开(公告)日：2018-01-03
申请号：EP15872119
申请日：2015-08-05
申请人： PANASONIC IP MAN CO LTD
发明人： UEDA NAOTO , OOMORI KOUJI , YOSHIDA TAKAYUKI , MOTOFUJI TAKUMA
IPC分类号： H01S5/024 , H01L21/60 , H01L23/373 , H01L23/40 , H01L23/48 , H01L25/07 , H01L25/18 , H01L29/861 , H01S5/022 , H01S5/042
CPC分类号： H01L23/3731 , H01L23/06 , H01L23/13 , H01L23/142 , H01L23/36 , H01L23/3736 , H01L23/4006 , H01L23/48 , H01L24/13 , H01L24/16 , H01L25/07 , H01L25/18 , H01L29/861 , H01L2023/4043 , H01L2023/4068 , H01L2224/13144 , H01L2224/16245 , H01L2924/0002 , H01L2924/1203 , H01L2924/12042 , H01L2924/15153 , H01L2924/16235 , H01L2924/16251 , H01S5/02236 , H01S5/024 , H01S5/042 , H01S5/0425 , H01L2924/00
摘要： A semiconductor device according to the present disclosure includes an electrically conductive first electrode block, an electrically conductive submount, an insulating layer, a semiconductor element, an electrically conductive bump, and an electrically conductive second electrode block. The submount is provided in a first region of the upper surface of the first electrode block, and electrically connected to the first electrode block. The semiconductor element is provided on the submount, and has a first electrode electrically connected to the submount. The bump is provided on the upper surface of a second electrode, opposite the first electrode, of the semiconductor element, and electrically connected to the second electrode. A third region of the lower surface of the second electrode block is electrically connected to the bump via an electrically conductive metal layer. An electrically conductive metal sheet is provided between the metal layer and the bump.

10. 发明公开

EP3128743A4 DETECTION ELEMENT, LOCK-IN DETECTION DEVICE, SUBSTRATE, AND MANUFACTURING METHOD FOR DETECTION ELEMENT 审中-公开
公开(公告)号：EP3128743A4
公开(公告)日：2017-12-20
申请号：EP15773067
申请日：2015-03-31
申请人： NIPPON KOGAKU KK
发明人： SARUWATARI OSAMU , AOKI SHIGERU , OKAMOTO KAZUYA , SUGAYA ISAO , OKADA MASASHI , OHKI HIROSHI
IPC分类号： G01S7/486 , G01S7/487 , G01S7/491 , G01S7/493 , G01S17/89 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/146 , H01L31/10 , H04N5/357 , H04N5/369 , H04N5/3745
CPC分类号： H01L27/14634 , G01S7/4863 , G01S7/4876 , G01S7/4914 , G01S7/493 , G01S17/89 , H01L25/065 , H01L25/07 , H01L25/18 , H01L25/50 , H01L27/14643 , H01L31/10 , H01L2924/0002 , H04N5/3745 , H01L2924/00
摘要： A detector comprises a plurality of photoelectric converters to output an electrical signal corresponding to an incident light, and a plurality of filter circuits provided corresponding to each of the plurality of photoelectric converters or to each of a plurality of element groups respectively including a predetermined number of the photoelectric converters of the plurality of photoelectric converters, the plurality of filter circuits attenuating a signal having a predetermined frequency from the electrical signal output from the plurality of photoelectric converters. In the above-described detector, the plurality of photoelectric converters may be provided in a first substrate, and the plurality of filter circuits may be provided in a second substrate laminated on the first substrate.

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