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31. 发明公开

EP2003935A2 ORGANIC ELECTROLUMINESCENT DISPLAY PANEL AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：有机加工商EZEKTROLUMINESZENZANZEIGESCHIRM UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2003935A2
公开(公告)日：2008-12-17
申请号：EP07740138.8
申请日：2007-03-28
申请人： Pioneer Corporation
发明人： CHUMAN, Takashi , OHTA, Satoru , HARADA, Chihiro
IPC分类号： H05B33/22 , G09F9/30 , H01L27/32 , H01L51/50 , H05B33/10 , H05B33/12
CPC分类号： H01L27/3246 , H01L27/283 , H01L27/3274 , H01L51/56
摘要： An active matrix drive organic EL display panel comprising an organic TFT with a configuration that prevents the occurrence of current leak, and a manufacturing method thereof are proposed. The organic EL display panel comprises: a substrate; an organic EL element comprising in order from the substrate, a first display electrode, an organic functional layer and a second display electrode; and an organic TFT for driving and controlling the organic EL element comprising in order from the substrate a gate electrode, a gate insulation film, source/drain electrodes, and an organic semiconductor layer. The organic EL display panel further comprises: a first bank having a first window section for demarcating a light emitting region on which the organic functional layer is provided on the first display electrode and a second window section demarcating a transistor region on which the organic semiconductor layer is provided between the source/drain electrodes; and a second bank located in the perimeter of the second window section and protruding in a direction that intersects with the main surface of the substrate.
摘要翻译：提出一种有源矩阵驱动型有机EL显示面板及其制造方法，该有源EL显示面板包括具有防止发生电流泄漏的结构的有机TFT。有机EL显示面板包括：基板; 从基板，第一显示电极，有机功能层和第二显示电极依次包括的有机EL元件; 以及用于驱动和控制有机EL元件的有机TFT，其包括从栅极电极，栅极绝缘膜，源极/漏极和有机半导体层的衬底的顺序。有机EL显示面板还包括：具有用于界定在第一显示电极上设置有机功能层的发光区域的第一窗口部分的第一组和界定有机半导体层的晶体管区域的第二窗口部分设置在源极/漏极之间; 以及位于第二窗口部分的周边中并且沿与基板的主表面相交的方向突出的第二组。

32. 发明公开

EP1915790A2 METHOD OF FABRICATING ORGANIC FETS 审中-公开
标题翻译：用于生产机场效电晶体
公开(公告)号：EP1915790A2
公开(公告)日：2008-04-30
申请号：EP06801475.2
申请日：2006-08-14
申请人： Organicid, Inc.
发明人： DIMMLER, Klaus , ROTZOLL, Robert R.
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： H01L51/052 , H01L27/283 , H01L51/0004 , H01L51/0541 , H01L51/0545
摘要： At least two thicknesses of dielectric are formed in the fabrication of organic field effect transistors. One thickness is formed in the active regions of the transistor for adjusting the desired threshold of the device. A second thickness is deposited in the field regions of the transistor to electrically isolate the transistors, and reduces leakage current and capacitance. A third dielectric thickness that is thicker than the first thickness but thinner than the second thickness can be used to define transistors having a second threshold voltage. The multiple dielectric thicknesses can be produced by multiple cell sizes of a gravure roll when using gravure printing, multiple cell sizes in an anolox roll in flexography printing, multiple nozzle size and chamber pressure in inkjet printing, or by printing successive layers of a single thickness of dielectric. The method can be employed in top gate, bottom gate top contact, and in bottom gate bottom contact organic transistor structures.

33. 发明公开

EP1863095A2 Thin film transistor array panel and method of manufacturing the same 审中-公开
标题翻译： Dünnschichttransistormatrixund Herstellungsverfahrendafür
公开(公告)号：EP1863095A2
公开(公告)日：2007-12-05
申请号：EP07010697.6
申请日：2007-05-30
申请人： Samsung Electronics Co., Ltd.
发明人： Song, Keun-Kyu , Kim, Bo-Sung , Cho, Seung-Hwan
IPC分类号： H01L27/32
CPC分类号： H01L27/283 , H01L27/3274 , H01L27/3276 , H01L29/41733 , H01L51/0036 , H01L51/0558
摘要： A thin film transistor array panel including a substrate, a plurality of data lines disposed on the substrate, an interlayer insulating layer disposed on the data lines and including contact holes through which the data lines are exposed, a plurality of source electrodes, each of the source electrodes disposed on the interlayer insulating layer and connected to the data line through the contact hole, a plurality of pixel electrodes, each of the pixel electrodes disposed on the interlayer insulating layer and including a drain elsetrode that faces a source electrode, organic semiconductors disposed on and partially overlapping the source electrodes and the drain electrodes, a gate insulating layer disposed on the organic semiconductors and gate lines disposed on the gate insulating layer and including gate electrodes overlapping the organic semiconductors.
摘要翻译：一种薄膜晶体管阵列面板，包括衬底，设置在衬底上的多条数据线，设置在数据线上的层间绝缘层，并且包括数据线暴露的接触孔，多个源电极，源电极，设置在层间绝缘层上，并通过接触孔与数据线连接，多个像素电极，每个像素电极设置在层间绝缘层上，并且包括面向源电极的漏极电极，设置有机半导体在源电极和漏电极之间并部分重叠，设置在有机半导体上的栅极绝缘层和设置在栅极绝缘层上并包括与有机半导体重叠的栅电极的栅极线。

34. 发明公开

EP1846952A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1846952A1
公开(公告)日：2007-10-24
申请号：EP06713559.0
申请日：2006-02-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YUKAWA, Mikio , FUJII, Gen , SHOJI, Hironobu
IPC分类号： H01L27/10
CPC分类号： G11C13/0014 , G11C13/004 , G11C2013/0042 , G11C2213/77 , G11C2213/79 , H01L27/283
摘要： It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.
摘要翻译：本发明的一个目的是提供一种高性能和高可靠性的半导体器件，并提供一种以高成品率以低成本制造该半导体器件的技术。通过形成第一导电层，在第一导电层上形成第一防液层，在第一防液层上排出包含用于掩模层的材料的组合物以形成掩模层的步骤来制造半导体器件，使用掩模层处理第一疏液层，形成第二疏液层，在第一导电层和第二导电层上形成绝缘层，以及在绝缘层上形成第二导电层。

35. 发明公开

EP1834358A1 ELECTRONIC DEVICE ARRAY 有权
标题翻译：方法生产电子设备的集团
公开(公告)号：EP1834358A1
公开(公告)日：2007-09-19
申请号：EP05804980.0
申请日：2005-12-16
申请人： Plastic Logic Limited
发明人： CAIN, Paul, A.
IPC分类号： H01L27/00 , H01L51/10 , H01L51/40
CPC分类号： H01L27/283 , H01L51/0017 , H01L51/0512 , H01L51/0516 , H01L51/0541
摘要： A method of producing an array of electronic devices, the method including the steps of: forming one or more first conductive elements of a first electronic device on a substrate and one or more second conductive elements of a second electronic device on said substrate; and forming a layer of channel material over the substrate and the first and second conductive elements to provide a first channel for, in use, the movement of charge carriers between conductive elements of said first electronic device and a second channel for, in use, the movement of charge carriers between conductive elements of said second electronic device; wherein the method also includes the step (a) of using an irradiative technique to decrease in a single step the conductivity of one or more selected portions of the layer of channel material in one or more regions between the first and second conductive elements.

36. 发明公开

EP1474832A4 METHOD AND SYSTEM FOR MOLECULAR CHARGE STORAGE FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：方法和系统分子电荷MEMORY场效应晶体管
公开(公告)号：EP1474832A4
公开(公告)日：2007-08-29
申请号：EP02805137
申请日：2002-12-12
申请人： UNIV CALIFORNIA , UNIV NORTH CAROLINA STATE
发明人： MISRA VEENA , BOCIAN DAVID F , KUHR WERNER G , LINDSEY JONATHAN S
IPC分类号： G11C11/56 , H01L21/8247 , G11C13/02 , H01L27/00 , H01L27/115 , H01L27/28 , H01L29/788 , H01L29/792 , H01L51/05
CPC分类号： H01L27/283 , B82Y10/00 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/53 , H01L51/052 , H01L51/0529 , Y10S977/721 , Y10S977/887 , Y10S977/937
摘要： A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules (120) between a gate (110) and channel (105) of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.

37. 发明公开

EP1810334A1 SEMICONDUCTOR DEVICE 有权
标题翻译：一种用于制造半导体器件的工艺
公开(公告)号：EP1810334A1
公开(公告)日：2007-07-25
申请号：EP05806734.9
申请日：2005-11-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： ABE, Hiroko, SEMICONDUCTOR ENERGY LAB. CO. LTD. , YUKAWA, Mikio, SEMICONDUCTOR ENERGY LAB. CO. LTD. , NOMURA, Ryoji, SEMICONDUCTOR ENERGY LAB. CO. LTD. , YAMAZAKI, Shunpei, SEMICONDUCTOR EN. LAB. CO. LTD. , NEMOTO, Yukie, SEMICONDUCTOR ENERGY LAB. CO. LTD.
IPC分类号： H01L27/10
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

38. 发明公开

EP1796184A2 Organic thin film transistor, method of manufacturing the same, and organic light emitting display device having the same 有权
标题翻译：一种有机薄膜晶体管，其制备方法和含有有机lichtemittiernde这样的显示装置
公开(公告)号：EP1796184A2
公开(公告)日：2007-06-13
申请号：EP06255489.4
申请日：2006-10-25
申请人： Samsung SDI Co., Ltd.
发明人： Ahn, Taek , Suh, Min-Chul , Park, Jin-Seong
IPC分类号： H01L51/05
CPC分类号： H01L27/283 , H01L27/3274 , H01L51/0017 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： An organic thin film transistor that can prevent damage to source and drain electrodes when patterning an organic semiconductor layer, and a method of manufacturing an organic light emitting display device comprising the organic thin film transistor. The organic thin film transistor includes a source electrode and a drain electrode; an organic semiconductor layer that contacts the source and drain electrodes, and has an ashed surface except a channel area between the source and drain electrodes; a gate electrode insulated from the source electrode, the drain electrode, and the organic semiconductor layer; and a gate insulating film that insulates the gate electrode from the source electrode, the,drain electrode, and the organic semiconductor layer.
摘要翻译：的有机薄膜晶体管可确实防止损坏源和漏电极当有机半导体层的图案化，和制造有机发光显示装置，包括有机薄膜晶体管的方法。所述有机薄膜晶体管包括：源电极和漏电极; 有机半导体层的没有接触所述源极和漏极，并具有灰化表面以外的源极和漏极电极之间的通道区域; 从源电极，漏电极，和有机半导体层绝缘的栅极电极; 和栅极绝缘膜做绝缘从所述源电极，所述，漏电极，和有机半导体层与栅电极。

39. 发明授权

EP1590721B1 ELECTRONIC DEVICE 有权
公开(公告)号：EP1590721B1
公开(公告)日：2007-04-11
申请号：EP04705146.1
申请日：2004-01-26
申请人： Koninklijke Philips Electronics N.V.
发明人： DE LEEUW, Dagobert, M. , MEIJER, Eduard, J. , SETAYESH, Sepas
IPC分类号： G06F1/00
CPC分类号： H01L51/0083 , B82Y10/00 , H01L27/283 , H01L51/0038 , H01L51/0039 , H01L51/0046 , H01L51/005 , H01L51/0058 , H01L51/0065 , H01L51/0516 , H01L51/0545 , H01L51/0566
摘要： The electronic device comprises an inverter having a first and a second fieldeffect transistor with an active layer comprising a first organic semiconductor material of the first conductivity type and a second organic semiconductor material of the second conductivity type. The active layer can be provided from a solution, for instance in that it is a blend of two materials.

40. 发明公开

EP1748344A2 Semiconductor device 审中-公开
标题翻译： Halbleiterbauelement
公开(公告)号：EP1748344A2
公开(公告)日：2007-01-31
申请号：EP06015169.3
申请日：2006-07-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kurokawa, Yoshiyuki
IPC分类号： G06F1/08 , G06K19/07
CPC分类号： H01L27/1203 , G06F1/08 , H01L27/105 , H01L27/283
摘要： In a semiconductor device having a large-scale arithmetic circuit, when there is delay in clock signals, a malfunction occurs in a circuit. In particular, in an environment where supply voltage varies as in a wireless chip, it is very difficult to precisely estimate delays in clock signals in designing. Further, in order to keep supply voltage stable, a large-scale power supply circuit is required, which increases the area of a chip, and the cost thereof. A semiconductor device provided with a power control circuit and a clock generation circuit is used to detect variation in supply voltage using the power control circuit and changing frequency and duty ratio of a clock circuit using the clock generation circuit, thereby operating an arithmetic circuit stably. A high performance semiconductor device provided with such a large-scale arithmetic circuit can be provided at low cost.
摘要翻译：在具有大规模运算电路的半导体器件中，当时钟信号有延迟时，在电路中发生故障。特别是在电源电压随无线芯片变化的环境中，在设计时精确估计时钟信号的延迟是非常困难的。此外，为了保持电源电压稳定，需要大规模的电源电路，这增加了芯片的面积及其成本。使用设置有功率控制电路和时钟发生电路的半导体器件来检测使用功率控制电路的电源电压的变化，并且使用时钟发生电路改变时钟电路的频率和占空比，从而稳定地运算运算电路。可以以低成本提供具有这种大规模运算电路的高性能半导体器件。

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