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1. 发明公开

EP1557884A2 Examination apparatus for biological sample and chemical sample 审中-公开
标题翻译： Probe und chemische Probe生物物理学
公开(公告)号：EP1557884A2
公开(公告)日：2005-07-27
申请号：EP04021003.1
申请日：2004-09-03
申请人： Hitachi, Ltd.
发明人： Yazawa, Yoshiaki , Watanabe, Kazuki , Kamahori, Msao , Kunimoto, Yukinori
IPC分类号： H01L27/12
CPC分类号： G01N27/414 , G01N27/4148 , H01L27/1203 , H01L51/0098
摘要： A wireless sensor chip suitable for the compact, high-sensitive, and low-cost examination apparatus for easily examining a biological material such as gene at low cost is provided. A sensor chip is formed on an SOI substrate, and an n type semiconductor layer on which a pMOS transistor is formed and a p type semiconductor layer on which an nMOS transistor is formed are isolated by a pn junction. Therefore, the p type semiconductor layer at the outermost portion (chip edge portion to be in contact with solution) is set to floating, and the maximum potential and the minimum potential of the chip are supplied to an n type semiconductor layer and a p type semiconductor layer inside the outermost portion, respectively. Also, the chip is covered with an ion impermeable insulating film for reducing the penetration of positive ions through the oxide layer.
摘要翻译：提供了一种适用于以低成本易于检测诸如基因等生物材料的小型，高灵敏度，低成本的检查装置的无线传感器芯片。传感器芯片形成在SOI衬底上，并且其上形成有pMOS晶体管的n型半导体层和其上形成有nMOS晶体管的p型半导体层被pn结隔离。因此，将最外侧部分（与溶液接触的芯片边缘部分）的p型半导体层设置为浮置，并且将芯片的最大电位和最小电位提供给n型半导体层和p型半导体分别在最外部分内。此外，芯片被不透水的绝缘膜覆盖，用于减少正离子穿过氧化物层的穿透。

2. 发明公开

EP2689478A4 ORGANIC MOLECULAR MEMORY AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：有机加工机械
公开(公告)号：EP2689478A4
公开(公告)日：2014-11-12
申请号：EP11861580
申请日：2011-09-20
申请人： TOSHIBA KK
发明人： HAYASHI TETSUYA , NISHIZAWA HIDEYUKI
IPC分类号： H01L51/05 , H01L27/105 , H01L27/28 , H01L45/00 , H01L49/00 , H01L51/30 , H01L51/40
CPC分类号： H01L51/0098 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/14 , H01L51/0591 , H01L51/0595

3. 发明公开

EP2381476A3 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：EP2381476A3
公开(公告)日：2012-02-08
申请号：EP11005952.4
申请日：2005-11-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Abe, Hiroko , Yukawa, Mikio , Nomura, Ryoji , Yamazaki, Shunpei , Nemoto, Yukie
IPC分类号： H01L27/10 , G11C13/00 , B82Y10/00 , H01L21/768 , H01L27/24 , H01L27/06 , H01L21/822 , G11C17/18 , G11C17/16
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes
a first element forming layer (501a);
a second element forming layer (502a);
a layer containing a conductive particle (305), configured to adhere the first element forming layer and the second element forming layer; and
a conductive layer (525) which functions as an antenna included in the first element forming layer or the second element forming layer,
wherein the first element forming layer includes a first transistor (111,113) provided over an insulating layer, and a first conductive layer (124a,124c) which functions as a source wiring or a drain wiring of the first transistor;
wherein the second element forming layer includes a memory element (454) comprising a third conductive layer (451), an organic compound layer or a phase change layer, and a fourth conductive layer laminated in this order; and
wherein the first conductive layer (124a,124b) which functions as the source wiring or the drain wiring of the first transistor is electrically connected to the third conductive layer (451) or the conductive layer (525) which functions as the antenna through the conductive particle.
摘要翻译：本发明提供了一种非易失性，容易制造并且可以另外写入的半导体器件。本发明的半导体器件包括第一元件形成层（501a）;第二元件形成层第二元件形成层（502a）; 包含导电粒子（305）的层，所述导电粒子被配置为粘附所述第一元件形成层和所述第二元件形成层; 以及作为所述第一元件形成层或所述第二元件形成层中包含的天线发挥作用的导电层（525），所述第一元件形成层包括设置在绝缘层上的第一晶体管（111,113），以及第一导电层（124a，124c），其用作所述第一晶体管的源极布线或漏极布线; 其中所述第二元件形成层包括依次层压包括第三导电层（451），有机化合物层或相变层和第四导电层的存储元件（454）并且其中用作所述第一晶体管的所述源极布线或所述漏极布线的所述第一导电层（124a，124b）通过所述第一导电层（124）的所述第三导电层（451）或所述导电层（525）导电粒子。

4. 发明公开

EP1950808A3 Examination apparatus for biological sample and chemical sample 有权
标题翻译：生物样品和化学样品检验设备
公开(公告)号：EP1950808A3
公开(公告)日：2008-09-17
申请号：EP08007071.7
申请日：2004-09-03
申请人： Hitachi, Ltd.
发明人： Yazawa, Yoshiaki , Watanabe, Kazuki , Kamahori, Masao , Kunimoto, Yukinori
IPC分类号： H01L27/12
CPC分类号： G01N27/414 , G01N27/4148 , H01L27/1203 , H01L51/0098
摘要： A wireless sensor chip suitable for the compact, high-sensitive, and low-cost examination apparatus for easily examining a biological material such as gene at low cost is provided. A sensor chip is formed on an SOI substrate, and an n-type semiconductor layer on which a pMOS transistor is formed and a p-type semiconductor layer on which an nMOS transistor is formed are isolated by a pn junction. Therefore, the p-type semiconductor layer at the outermost portion (chip edge portion to be in contact with solution) is set to floating, and the maximum potential and the minimum potential of the chip are supplied to an n-type semiconductor layer and a p-type semiconductor layer inside the outermost portion, respectively. Also, the chip is covered with an ion impermeable insulating film for reducing the penetration of positive ions through the oxide layer.

5. 发明公开

EP1497485A4 METHODS OF USING PRE-FORMED NANOTUBES TO MAKE CARBON NANOTUBE FILMS, LAYERS, FABRICS, RIBBONS, ELEMENTS AND ARTICLES 审中-公开
标题翻译： PRE-形成的纳米管对这种膜，层，面料，丝带，要素和制品的生产中使用
公开(公告)号：EP1497485A4
公开(公告)日：2008-03-19
申请号：EP03710664
申请日：2003-01-13
申请人： NANTERO INC
发明人： WARD JONATHAN W , RUECKES THOMAS , SEGAL BRENT M
IPC分类号： B82B3/00 , H01L51/00 , B05D1/40 , B05D7/24 , B32B19/00 , B81B3/00 , C01B31/02 , C09C1/48 , D01C5/00 , D01F9/12 , D02G3/00 , D04H1/42 , D06M13/51 , G11C13/02 , G11C23/00 , H01H59/00 , H01L21/768 , H01L27/10 , H01L27/12 , H01L27/24 , H01L51/30
CPC分类号： G11C13/025 , B41F7/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , D01F9/127 , D04H1/4234 , D04H1/4242 , D04H1/4382 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01L21/76838 , H01L27/10 , H01L27/1203 , H01L51/0003 , H01L51/0017 , H01L51/0048 , H01L51/0098 , H01L2221/1094 , Y10S977/742 , Y10S977/75 , Y10S977/778 , Y10S977/943 , Y10T428/24802 , Y10T428/2918 , Y10T428/2982 , Y10T428/30
摘要： Methods of using performed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles are disclosed. To make various articles, certain embodiments provide a substrate (12). Performed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric (54) are selectively removed according to a defined pattern to create the article. To make a nonfabxic, a substrate is provide. Prefromed nanotubea are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes wherein the non-woven fabric is substantially uniform density.
摘要翻译：使用纳米管执行的使碳纳米管的膜，层，织物，带，元件的方法和制品是游离缺失盘。为了使各种制品，某些实施方案提供一个衬底（12）。进行纳米管被施加到所述基板的表面，以产生碳纳米管的非织造织物。该非织造织物（54）的一些部分被选择性地去除gemäß到一个定义的模式来创建所述制品。为了使nonfabxic，一个基板是提供。 Prefromed nanotubea被施加到基板的表面，以产生碳纳米管worin无纺织物是基本上均匀密度的无纺织物。

6. 发明公开

EP2966684A4 ELECTRONIC ELEMENT 有权
标题翻译：电子元器件
公开(公告)号：EP2966684A4
公开(公告)日：2016-11-16
申请号：EP14762487
申请日：2014-03-09
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： MAJIMA YUTAKA , TERANISHI TOSHIHARU , AZUMA YASUO , SAKAMOTO MASANORI , KANO SHINYA , DANIEL EDUARDO HURTADO SALINAS
IPC分类号： H01L27/105 , H01L27/10 , H01L29/66 , H01L45/00 , H01L49/00
CPC分类号： H01L29/7613 , B82Y10/00 , G11C7/00 , H01L29/0665 , H01L29/127 , H01L29/413 , H01L51/0098

7. 发明公开

EP2381476A2 Semiconductor device 有权
标题翻译： Herstellungsmethodefürein Halbleiterbauelement
公开(公告)号：EP2381476A2
公开(公告)日：2011-10-26
申请号：EP11005952.4
申请日：2005-11-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Abe, Hiroko , Yukawa, Mikio , Nomura, Ryoji , Yamazaki, Shunpei , Nemoto, Yukie
IPC分类号： H01L27/10 , G11C13/00 , B82Y10/00 , H01L21/768 , H01L27/24
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes
a first element forming layer (501a);
a second element forming layer (502a);
a layer containing a conductive particle (305), configured to adhere the first element forming layer and the second element forming layer; and
a conductive layer (525) which functions as an antenna included in the first element forming layer or the second element forming layer,
wherein the first element forming layer includes a first transistor (111,113) provided over an insulating layer, and a first conductive layer (124a,124c) which functions as a source wiring or a drain wiring of the first transistor;
wherein the second element forming layer includes a memory element (454) comprising a third conductive layer (451), an organic compound layer or a phase change layer, and a fourth conductive layer laminated in this order; and
wherein the first conductive layer (124a,124b) which functions as the source wiring or the drain wiring of the first transistor is electrically connected to the third conductive layer (451) or the conductive layer (525) which functions as the antenna through the conductive particle.
摘要翻译：本发明提供了一种非易失性，易于制造并且可以额外写入的半导体器件。本发明的半导体器件包括第一元件形成层（501a）; 第二元件形成层（502a）; 包含导电粒子（305）的层，被配置为粘附所述第一元素形成层和所述第二元素形成层; 以及用作包括在第一元件形成层或第二元件形成层中的天线的导电层（525），其中第一元件形成层包括设置在绝缘层上的第一晶体管（111,113）和第一导电层（124a，124c），其用作第一晶体管的源极布线或漏极布线; 其中，所述第二元件形成层包括依次层叠的第三导电层（451），有机化合物层或相变层和第四导电层的存储元件（454）并且其中用作第一晶体管的源极布线或漏极布线的第一导电层（124a，124b）电连接到用作天线的第三导电层（451）或导电层（525）导电颗粒。

8. 发明公开

EP1810334A1 SEMICONDUCTOR DEVICE 有权
标题翻译：一种用于制造半导体器件的工艺
公开(公告)号：EP1810334A1
公开(公告)日：2007-07-25
申请号：EP05806734.9
申请日：2005-11-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： ABE, Hiroko, SEMICONDUCTOR ENERGY LAB. CO. LTD. , YUKAWA, Mikio, SEMICONDUCTOR ENERGY LAB. CO. LTD. , NOMURA, Ryoji, SEMICONDUCTOR ENERGY LAB. CO. LTD. , YAMAZAKI, Shunpei, SEMICONDUCTOR EN. LAB. CO. LTD. , NEMOTO, Yukie, SEMICONDUCTOR ENERGY LAB. CO. LTD.
IPC分类号： H01L27/10
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

9. 发明公开

EP1677373A2 Method of using pre-formed nanotubes to make carbon nanotube films, layers, ribbons, elements and articles 审中-公开
标题翻译：使用已制造的碳纳米管生产的薄膜，层，带，元素和文章
公开(公告)号：EP1677373A2
公开(公告)日：2006-07-05
申请号：EP06008240.1
申请日：2003-01-13
申请人： Nantero, Inc.
发明人： Ward, Jonathan W. , Segal, Brent M. , Rueckes, Thomas
IPC分类号： H01L51/00
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , D01F9/127 , D04H1/4234 , D04H1/4242 , D04H1/4382 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01L21/76838 , H01L27/10 , H01L27/1203 , H01L51/0003 , H01L51/0017 , H01L51/0048 , H01L51/0098 , H01L2221/1094 , Y10S977/742 , Y10S977/75 , Y10S977/778 , Y10S977/943 , Y10T428/24802 , Y10T428/2918 , Y10T428/2982 , Y10T428/30
摘要： Methods of using performed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles are disclosed. To make various articles, certain embodiments provide a substrate (12). Performed nanotubes are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric (54) are selectively removed according to a defined pattern to create the article. To make a nonfabxic, a substrate is provide. Prefromed nanotubea are applied to a surface of the substrate to create a non-woven fabric of carbon nanotubes wherein the non-woven fabric is substantially uniform density.
摘要翻译：使用纳米管执行的使碳纳米管的膜，层，织物，带，元件的方法和制品是游离缺失盘。为了使各种制品，某些实施方案提供一个衬底（12）。进行纳米管被施加到所述基板的表面，以产生碳纳米管的非织造织物。该非织造织物（54）的一些部分被选择性地去除gemäß到一个定义的模式来创建所述制品。为了使nonfabxic，一个基板是提供。 Prefromed nanotubea被施加到基板的表面，以产生碳纳米管worin无纺织物是基本上均匀密度的无纺织物。

10. 发明公开

EP3153462A1 DISPOSITIF POUR CONNECTER AU MOINS UN NANO-OBJET ASSOCIE A UNE PUCE PERMETTANT UNE CONNEXION A AU MOINS UN SYSTEME ELECTRIQUE EXTERNE ET SON PROCEDE DE REALISATION 有权
标题翻译： DEVICE用于连接至少一用一芯片关联纳米棒点一个链接到至少外部电气系统能够及其制造方法
公开(公告)号：EP3153462A1
公开(公告)日：2017-04-12
申请号：EP16191926.1
申请日：2016-09-30
申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
发明人： THUAIRE, Aurélie , REYNAUD, Patrick , LEDUC, Patrick , ROLLAND, Emmanuel
IPC分类号： B81B7/00
CPC分类号： H01L25/50 , B81B7/007 , B81B2207/07 , H01L23/49844 , H01L23/5389 , H01L25/115 , H01L27/286 , H01L29/0665 , H01L51/0098
摘要： Réalisation d'un dispositif pour connecter un nano-objet à un système électrique externe (SEE) comprenant :
- une première puce dotée de zones conductrices (8a, 8b) et d'un premier nano-objet (50) connecté aux zones conductrices, la première puce étant assemblée sur un support (70) de sorte que le premier nano-objet est disposé en regard d'une face supérieure du support, le dispositif étant doté en outre de premiers éléments de connexion (80a, 80b) aptes à être connectés au système électrique externe et disposées sur et en contact des premières zones conductrices (8a, 8b), les premiers éléments de connexion étant formés du côté de la face supérieure du support (70) et étant accessibles du côté de la face supérieure du support.

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