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1. 发明公开

EP3382751A1 FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT 有权
公开(公告)号：EP3382751A1
公开(公告)日：2018-10-03
申请号：EP16868506.3
申请日：2016-11-21
申请人： Toray Industries, Inc.
发明人： WAKITA, Junji , SHIMIZU, Hiroji , KAWAI, Shota , MURASE, Seiichiro
IPC分类号： H01L21/8246 , G03F7/004 , G03F7/038 , H01B1/22 , H01B5/16 , H01L21/288 , H01L27/105 , H01L27/28 , H01L29/786 , H01L51/05
CPC分类号： C08F220/14 , C08F212/08 , C08F220/32 , C08F2220/1841 , C08F2220/325 , C08F2800/20 , C08G18/34 , C08G18/71 , G03F7/004 , G03F7/038 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/322 , G03F7/40 , G06K19/07773 , H01B1/22 , H01B5/16 , H01L21/288 , H01L27/105 , H01L27/11507 , H01L27/1159 , H01L27/28 , H01L27/283 , H01L29/786 , H01L51/004 , H01L51/0043 , H01L51/0048 , H01L51/05 , H01L51/0558
摘要： An object of the present invention is to provide a ferroelectric memory element which has a low driving voltage and which can be formed by coating. The present invention provides a ferroelectric memory element including at least: a first conductive film; a second conductive film; and a ferroelectric layer provided between the first conductive film and the second conductive film; wherein the ferroelectric layer contains ferroelectric particles and an organic component, and wherein the ferroelectric particles have an average particle size of from 30 to 500 nm.

2. 发明授权

EP1866965B1 METHOD OF PRODUCING PLURALITY OF ORGANIC TRANSISTORS USING LASER PATTERNING 无效
公开(公告)号：EP1866965B1
公开(公告)日：2018-07-25
申请号：EP06726620.5
申请日：2006-04-03
申请人： Flexenable Limited
发明人： CAIN, Paul A. , HAYTON, Carl, Plastic Logic Limited , MENON, Anoop , BROWN, Thomas M., Universita Degli Studi Di Roma
IPC分类号： H01L51/40 , H01L27/28
CPC分类号： H01L51/0017 , H01L27/283 , H01L27/3262 , H01L27/3274 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0097 , H01L51/0541
摘要： A method of producing a plurality of transistors each including a source/drain electrode pair comprising a conductor material and a channel comprising semiconductor material between the source and drain electrodes of said source/drain electrode pair; the method comprising (i) forming over a substrate at least a first layer of said conductor material or a precursor thereto and a second layer of said semiconductor material or a precursor thereto; and (ii) thereafter removing selected portions of at least said first and second layers so as to define at least two adjacent source/drain electrode pairs that are unconnected to each other within said first and second layers.

3. 发明公开

EP3104370A4 STRETCHABLE CONDUCTOR, METHOD FOR MANUFACTURING SAME, AND PASTE FOR FORMING STRETCHABLE CONDUCTOR 有权
标题翻译： DEHNBARER LEITER，VERFAHREN ZUR HERSTELLUNG DAVON UND PASTE ZUR HERSTELLUNG EINES DEHNBAREN LEITERS
公开(公告)号：EP3104370A4
公开(公告)日：2017-09-20
申请号：EP15745944
申请日：2015-02-05
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： SEKITANI TSUYOSHI , SOMEYA TAKAO , MATSUHISA NAOJI
IPC分类号： H01B1/22 , H01B13/00 , H01L21/288 , H01L27/32 , H01L29/786 , H01L51/00
CPC分类号： H01B1/24 , C09D5/24 , C09D115/02 , H01B1/22 , H01B13/0036 , H01L21/288 , H01L21/76838 , H01L23/5328 , H01L27/283 , H01L27/3276 , H01L29/786 , H01L51/0007 , H01L51/0022 , H01L51/0097 , Y02P70/521
摘要： A stretchable conductor of the present invention includes: a mixture which is configured of a stretchable portion made of an elastomer, and at least one type of conductive particles dispersed in the stretchable portion; and a conducting portion in which the conductive particles are aggregated in a higher concentration at one or a plurality of positions on an interface of the mixture than that at positions located in an inner portion of the mixture.
摘要翻译：本发明的伸缩性导体包括：由弹性体构成的伸缩部和分散在该伸缩部中的至少一种导电性粒子构成的混合体，以及导电部分，其中导电颗粒在混合物的界面上的一个或多个位置处聚集成浓度高于位于混合物内部的位置处的导电颗粒。

4. 发明公开

EP3166156A4 ORGANIC THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, ARRAY SUBSTRATE AND PREPARATION METHOD THEREOF, DISPLAY DEVICE 有权
标题翻译：用于产生和显示装置的有机薄膜晶体管及其制造方法，阵列基板和PROCESS
公开(公告)号：EP3166156A4
公开(公告)日：2017-06-21
申请号：EP14882145
申请日：2014-12-04
申请人： BOE TECHNOLOGY GROUP CO LTD
发明人： FONG HONHANG , XIE YINGTAO , OUYANG SHIHONG , CAI SHUCHENG , SHI QIANG , LIU ZE
IPC分类号： H01L51/05 , H01L51/10 , H01L51/40
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3274 , H01L51/0018 , H01L51/052 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof, and a display device; and the preparation method of the organic thin film transistor comprises: forming a source-drain metal layer including a source electrode (12a) and a drain electrode (12b), and forming an organic semiconductor active layer (13) in contact with the source electrode (12a) and the drain electrode (12b); and forming an organic insulating thin film (140) on a substrate (10) where the source-drain metal layer and the organic semiconductor active layer (13) have been formed, thinning the organic insulating thin film (140) and curing the thinned organic insulating thin film (140), or curing the organic insulating thin film (140) and thinning the cured organic insulating thin film (140), to form an organic insulating layer (14). The method can be used to form a thin and uniform organic insulating layer, so a technical difficulty in forming a via hole is reduced.
摘要翻译：的有机薄膜晶体管及其制备方法，到阵列基板及其制备方法，以及显示装置; 和所述有机薄膜晶体管的制备方法包括：形成源极 - 漏极金属层包括源电极（12a）和漏极电极（12b）上，并在与所述源极接触的有机半导体活性层（13）的形成（12a）和漏极电极（12b）上; 且其中所述源极 - 漏极金属层与所述有机半导体活性层（13）已经被形成在基板（10）上形成有机绝缘薄膜（140），减薄有机绝缘薄膜（140）和固化减薄有机绝缘性薄膜（140），或固化该有机绝缘薄膜（140）和薄化固化的有机绝缘薄膜（140），以形成在有机绝缘层（14）。该方法可以被用于形成薄且均匀的有机绝缘层，所以在形成通孔所涉及的技术难度降低。

5. 发明公开

EP3166156A1 ORGANIC THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, ARRAY SUBSTRATE AND PREPARATION METHOD THEREOF, DISPLAY DEVICE 有权
标题翻译：有机薄膜晶体管及其制备方法，阵列基板及其制备方法，显示装置
公开(公告)号：EP3166156A1
公开(公告)日：2017-05-10
申请号：EP14882145.7
申请日：2014-12-04
申请人： BOE Technology Group Co., Ltd.
发明人： FONG, Honhang , XIE, Yingtao , OUYANG, Shihong , CAI, Shucheng , SHI, Qiang , LIU, Ze
IPC分类号： H01L51/05 , H01L51/40 , H01L51/10
CPC分类号： H01L51/0541 , H01L27/283 , H01L27/3274 , H01L51/0018 , H01L51/052 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof, and a display device; and the preparation method of the organic thin film transistor comprises: forming a source-drain metal layer including a source electrode (12a) and a drain electrode (12b), and forming an organic semiconductor active layer (13) in contact with the source electrode (12a) and the drain electrode (12b); and forming an organic insulating thin film (140) on a substrate (10) where the source-drain metal layer and the organic semiconductor active layer (13) have been formed, thinning the organic insulating thin film (140) and curing the thinned organic insulating thin film (140), or curing the organic insulating thin film (140) and thinning the cured organic insulating thin film (140), to form an organic insulating layer (14). The method can be used to form a thin and uniform organic insulating layer, so a technical difficulty in forming a via hole is reduced.
摘要翻译：一种有机薄膜晶体管及其制备方法，阵列基板及其制备方法和显示装置，所述有机薄膜晶体管的制备方法包括：形成包括源电极（12a）和漏电极（12b）的源漏金属层，形成与所述源电极接触的有机半导体有源层（13）（12a）和漏电极（12b）; 以及在形成有源漏金属层和有机半导体活性层（13）的衬底（10）上形成有机绝缘薄膜（140），使有机绝缘薄膜（140）变薄并且使薄化的有机物（140）或固化有机绝缘薄膜（140）并使固化的有机绝缘薄膜（140）变薄，以形成有机绝缘层（14）。该方法可用于形成薄而均匀的有机绝缘层，因此减少了形成通孔的技术难度。

7. 发明授权

EP2206144B1 ORGANIC TRANSISTOR ARRAY AND DISPLAY DEVICE 有权
标题翻译：有机晶体管排列显示设备
公开(公告)号：EP2206144B1
公开(公告)日：2016-11-30
申请号：EP08843553.2
申请日：2008-10-17
申请人： Ricoh Company, Ltd.
发明人： YUTANI, Keiichiro , TOMONO, Hidenori , YAMAGA, Takumi
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/288 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786 , H01L51/05 , H01L51/30
CPC分类号： H01L51/0015 , H01L27/283 , H01L51/0005 , H01L51/0022 , H01L51/0558

8. 发明公开

EP3071994A1 ORGANIC X-RAY DETECTOR WITH BARRIER LAYER 审中-公开
标题翻译：带屏蔽有机射线探测器
公开(公告)号：EP3071994A1
公开(公告)日：2016-09-28
申请号：EP14772507.1
申请日：2014-09-08
申请人： General Electric Company
发明人： AN, Kwang Hyup , COUTURE, Aaron Judy , PARTHASARATHY, Gautam , ZHAO, Ri-An , LIU, Jie Jerry
IPC分类号： G01T1/20 , H01L27/30
CPC分类号： H01L27/308 , G01T1/2018 , H01L27/14663 , H01L27/283 , H01L51/0097 , H01L51/447 , H01L51/448 , Y02E10/549 , Y02P70/521
摘要： An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an organic photodiode layer disposed on the TFT array, a barrier layer disposed on the photodiode layer, and a scintillator layer disposed on the barrier layer, such that the barrier layer includes at least one inorganic material.

9. 发明公开

EP3051579A1 THIN FILM TRANSISTOR ARRAY AND IMAGE DISPLAY DEVICE 有权
标题翻译：薄膜晶体管元件及影像显示装置
公开(公告)号：EP3051579A1
公开(公告)日：2016-08-03
申请号：EP14849709.2
申请日：2014-09-11
申请人： Toppan Printing Co., Ltd.
发明人： KUMAGAI, Minoru , IKEDA, Noriaki
IPC分类号： H01L21/336 , H01L21/28 , H01L21/288 , H01L29/786 , H01L51/05
CPC分类号： H01L51/107 , G02F1/1368 , G02F1/167 , H01L27/1248 , H01L27/1292 , H01L27/283 , H01L51/0004 , H01L51/0034 , H01L51/0035 , H01L51/005 , H01L51/0055 , H01L51/0094 , H01L51/0096 , H01L51/0545
摘要： Provided is a thin film transistor array which does not employ photolithography for forming an interlayer insulation film and has few defects in the interlayer insulation film. The thin film transistor array at least includes an insulation substrate; a gate electrode; a gate insulation film; a source electrode; a drain electrode; a semiconductor layer; a protective layer that covers the semiconductor layer; a pixel electrode; and an interlayer insulation film formed between the drain electrode and the pixel electrode. The interlayer insulation film is an organic film or a mixed film made of an organic material and an inorganic material, including a via hole that connects the pixel electrode to the drain electrode. The drain electrode includes an opening portion located in the via hole and the drain electrode in the via hole is provided with a thiol group or a disulfide group contained thereon.

10. 发明公开

EP2889911A1 ORGANIC THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE 有权
标题翻译：有机薄膜晶体管阵列基板，方法用于生产和显示设备
公开(公告)号：EP2889911A1
公开(公告)日：2015-07-01
申请号：EP12858692.2
申请日：2012-12-14
申请人： BOE Technology Group Co., Ltd.
发明人： ZHANG, Xuehui
IPC分类号： H01L27/28 , H01L21/77 , H01L51/40 , G02F1/133
CPC分类号： H01L51/0512 , G02F1/136286 , H01L27/283 , H01L27/3274 , H01L51/0541 , H01L51/10
摘要： There are provided an organic thin film transistor array substrate and a method for manufacturing the same which increases the manufacturing efficiency of the organic thin film transistor array substrate. In the method, a pattern layer (3) of pixel electrode, and a pattern layer (2a) of source electrode and data line and a pattern layer (2b) of drain electrode, which are located above the pattern layer (3) of pixel electrode, are formed on a substrate through one patterning process; an organic semiconductor layer (4) that covers the pattern layer (2a) of source electrode and data line and the pattern layer (2b) of drain electrode and a gate insulating layer (5) that covers the organic semiconductor layer (4) are formed through one patterning process; and a pattern layer (7) of gate electrode and gate line is formed through one patterning process on the substrate formed with the gate insulating layer (5).
摘要翻译：有设置在有机薄膜晶体管阵列基板及其制造这增加了有机薄膜晶体管阵列基板的制造效率的方法。在该方法中，像素电极的图案层（3），以及源电极和数据线的图案层（2a）和漏电极的图案层（2b）中，分别位于所述图案层（3）上方的像素的电极，在形成通过一次构图工艺在衬底上; 有机半导体层（4）的没有覆盖源电极与数据线和漏电极的图案层（2b）和栅极绝缘层（5）那样的图案层（2a）的覆盖（4）上形成有机半导体层通过一次构图工艺; 和栅电极和栅极线的图案层（7）通过在与栅极绝缘层（5）形成的基材一次构图工艺形成。

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