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1. 发明授权

EP1641092B1 ORGANIC LASER DEVICE 有权
标题翻译：有机激光器件
公开(公告)号：EP1641092B1
公开(公告)日：2012-02-22
申请号：EP04746279.1
申请日：2004-06-23
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： NOMURA, Ryoji , ABE, Hiroko , YUKAWA, Mikio
IPC分类号： H01S5/183 , H01S5/36 , H01L51/50 , H01L51/52
CPC分类号： H01S5/18305 , H01L51/5012 , H01L51/5048 , H01L51/5265 , H01S5/0425 , H01S5/1096 , H01S5/12 , H01S5/2004 , H01S5/2027 , H01S5/36 , H01S2301/04
摘要： An organic laser device including an organic compound that emits a laser beam when injected with a current. An organic compound layer used in the laser device has its laminate structure and the film thickness of each layer determined according to the wavelength of a laser beam that can be emitted. A thin film mainly containing an organic compound formed between a pair of electrodes is generally called an organic compound layer in this invention. An organic compound layer is formed by being held between a pair of electrodes, and is preferably formed by using a plurality of layers different in carrier transportation characteristics and emission wavelength. A so-called resonator structure having a pair of electrodes formed via a reflector is a preferable mode.

2. 发明公开

EP1866964A1 MEMORY ELEMENT, MEMORY DEVICE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：存储器元件，存储器件和半导体器件
公开(公告)号：EP1866964A1
公开(公告)日：2007-12-19
申请号：EP06730321.4
申请日：2006-03-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YUKAWA, Mikio , OHSAWA, Nobuharu , ASAMI, Yoshinobu
IPC分类号： H01L27/10
CPC分类号： H01L27/1255 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L27/101 , H01L27/105 , H01L27/112 , H01L27/11206 , H01L27/11286 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/13 , H01L27/285 , H01L51/0042 , H01L51/0051 , H01L51/0059 , H01L51/0081 , H01L51/0533
摘要： On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.
摘要翻译：本发明的目的是提供一种非易失性存储器件及包括该存储器件的半导体器件，其中可以在制造过程之后将数据添加到存储器件并且通过重写进行伪造等。本发明的另一个目的是提供一种高度可靠，廉价且非易失性的存储器件和包括该存储器件的半导体器件。存储元件包括第一导电层，第二导电层，厚度为0.1nm以上且4nm以下的第一绝缘层与第一导电层接触，以及有机化合物层，插入在第一导电层层，第一绝缘层和第二导电层。

3. 发明公开

EP2084745A1 DEVICE, AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：装置及其制造方法
公开(公告)号：EP2084745A1
公开(公告)日：2009-08-05
申请号：EP07832713.7
申请日：2007-11-21
申请人： Semiconductor Energy Laboratory Co, Ltd.
发明人： YUKAWA, Mikio , SUGISAWA, Nozomu , NAGATA, Takaaki , YOSHITOMI, Shuhei , AIZAWA, Michiko
IPC分类号： H01L27/28 , H01L21/02 , H01L21/336 , H01L27/10 , H01L27/12 , H01L29/786 , H01L51/05
CPC分类号： H01L51/105 , G11C13/0016 , G11C13/004 , H01L27/283 , H01L51/006 , H01L51/0591
摘要： In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.

4. 发明公开

EP1883970A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1883970A1
公开(公告)日：2008-02-06
申请号：EP06745976.8
申请日：2006-04-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YUKAWA, Mikio , OHSAWA, Nobuharu , NOMURA, Ryoji , ASAMI, Yoshinobu
IPC分类号： H01L27/28 , H01L51/05
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的一个目的是提供一种技术，其中高性能和高可靠性的存储器件和具有该存储器件的半导体器件以低成本以高产率制造。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和在包括绝缘体的有机化合物层上的第二导电层。此外，通过形成第一导电层，在第一导电层上放电绝缘体和有机化合物的组合物以形成包括绝缘体的有机化合物层，并且在有机化合物层上形成第二导电层来制造半导体器件包括绝缘体。

5. 发明公开

EP1846952A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1846952A1
公开(公告)日：2007-10-24
申请号：EP06713559.0
申请日：2006-02-07
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YUKAWA, Mikio , FUJII, Gen , SHOJI, Hironobu
IPC分类号： H01L27/10
CPC分类号： G11C13/0014 , G11C13/004 , G11C2013/0042 , G11C2213/77 , G11C2213/79 , H01L27/283
摘要： It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.
摘要翻译：本发明的一个目的是提供一种高性能和高可靠性的半导体器件，并提供一种以高成品率以低成本制造该半导体器件的技术。通过形成第一导电层，在第一导电层上形成第一防液层，在第一防液层上排出包含用于掩模层的材料的组合物以形成掩模层的步骤来制造半导体器件，使用掩模层处理第一疏液层，形成第二疏液层，在第一导电层和第二导电层上形成绝缘层，以及在绝缘层上形成第二导电层。

6. 发明公开

EP1825478A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体部件及其制造方法
公开(公告)号：EP1825478A1
公开(公告)日：2007-08-29
申请号：EP05814131.8
申请日：2005-12-01
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： MORIYA, Yoshitaka , ABE, Hiroko , YUKAWA, Mikio , NOMURA, Ryoji
IPC分类号： G11C13/02 , G11C11/22
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/22
摘要： It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.

7. 发明授权

EP1866964B1 MEMORY ELEMENT 有权
标题翻译：存储器元件
公开(公告)号：EP1866964B1
公开(公告)日：2016-08-10
申请号：EP06730321.4
申请日：2006-03-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： YUKAWA, Mikio , OHSAWA, Nobuharu , ASAMI, Yoshinobu
IPC分类号： H01L27/10 , B82Y10/00 , G11C13/00 , H01L27/28 , H01L51/00 , H01L51/05 , H01L27/112 , H01L27/12 , H01L27/13 , H01L27/105
CPC分类号： H01L27/1255 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L27/101 , H01L27/105 , H01L27/112 , H01L27/11206 , H01L27/11286 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/13 , H01L27/285 , H01L51/0042 , H01L51/0051 , H01L51/0059 , H01L51/0081 , H01L51/0533
摘要： On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.

8. 发明授权

EP1883970B1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1883970B1
公开(公告)日：2012-10-10
申请号：EP06745976.8
申请日：2006-04-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： YUKAWA, Mikio , OHSAWA, Nobuharu , NOMURA, Ryoji , ASAMI, Yoshinobu
IPC分类号： H01L51/05
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591

9. 发明授权

EP1825478B1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1825478B1
公开(公告)日：2009-04-01
申请号：EP05814131.8
申请日：2005-12-01
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： MORIYA, Yoshitaka , ABE, Hiroko , YUKAWA, Mikio , NOMURA, Ryoji
IPC分类号： G11C13/02 , G11C11/22
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/22
摘要： It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
摘要翻译：本发明的一个目的是提供一种易于制造的数据可被额外写入的易失性半导体器件及其制造方法。本发明的特征在于，半导体器件包括：元件形成层，其包括设置在衬底上的第一晶体管和第二晶体管; 设置在元件形成层上的存储元件; 以及设置在所述存储元件上方的传感器部分，其中所述存储元件具有包括第一导电层和有机化合物层的分层结构以及第二导电层，所述第一导电层电连接到所述第一晶体管，并且所述第一晶体管传感器部分电连接到第二晶体管。

10. 发明公开

EP1946374A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP1946374A1
公开(公告)日：2008-07-23
申请号：EP06832471.4
申请日：2006-11-02
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： KUSUMOTO, Naoto , OHSAWA, Nobuharu , YUKAWA, Mikio , DOZEN, Yoshitaka
IPC分类号： H01L27/105 , H01L21/28 , H01L21/336 , H01L27/10 , H01L27/28 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786 , H01L51/05
CPC分类号： H01L27/1266 , B82Y10/00 , G02F2001/13613 , G11C13/00 , G11C13/0014 , G11C2213/77 , G11C2213/79 , H01L27/1214 , H01L27/281 , H01L29/458 , H01L51/003 , H01L2251/558
摘要： To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.

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