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11. 发明公开

EP1548768A3 Micromachined film bulk acoustic resonator 有权
标题翻译：微结构化薄膜谐振器
公开(公告)号：EP1548768A3
公开(公告)日：2007-03-21
申请号：EP04078526.3
申请日：2004-12-24
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
发明人： Tilmans, Hendrikus A.C. , Pan, Wanling
IPC分类号： H01G5/14
CPC分类号： H03H9/172 , H01G5/18 , H01G5/38 , H03H3/02 , H03H3/04 , H03H9/02102 , H03H2003/022 , H03H2003/027 , H03H2009/241
摘要： The present invention provides an FBAR device with a means for internally varying a capacitance. The device comprises a bottom electrode and a top electrode, said bottom electrode and said top electrode have an overlap area A, the overlap being defined by the projection of the top electrode onto the bottom electrode in a direction substantially perpendicular to the plane of the bottom electrode. Furthermore, the device comprises a piezoelectric layer in between said bottom electrode and said top electrode and a dielectric layer in between the piezoelectric layer and the bottom electrode. The device also comprises means for reversibly varying an internal impedance of the device. The capacitance may be tuned by either varying the thickness of the dielectric layer, by changing the overlap between the bottom electrode and the top electrode or by shifting a different dielectric material between the electrodes.

12. 发明公开

EP1548768A2 Micromachined film bulk acoustic resonator 有权
标题翻译： MikrostrukturierterDünnfilmresonator
公开(公告)号：EP1548768A2
公开(公告)日：2005-06-29
申请号：EP04078526.3
申请日：2004-12-24
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
发明人： Tilmans, Hendrikus A.C. , Pan, Wanling
IPC分类号： H01G5/14
CPC分类号： H03H9/172 , H01G5/18 , H01G5/38 , H03H3/02 , H03H3/04 , H03H9/02102 , H03H2003/022 , H03H2003/027 , H03H2009/241
摘要： The present invention provides an FBAR device with a means for internally varying a capacitance. The device comprises a bottom electrode and a top electrode, said bottom electrode and said top electrode have an overlap area A, the overlap being defined by the projection of the top electrode onto the bottom electrode in a direction substantially perpendicular to the plane of the bottom electrode. Furthermore, the device comprises a piezoelectric layer in between said bottom electrode and said top electrode and a dielectric layer in between the piezoelectric layer and the bottom electrode. The device also comprises means for reversibly varying an internal impedance of the device. The capacitance may be tuned by either varying the thickness of the dielectric layer, by changing the overlap between the bottom electrode and the top electrode or by shifting a different dielectric material between the electrodes.
摘要翻译：本发明提供一种具有内部改变电容的装置的FBAR装置。该装置包括底部电极和顶部电极，所述底部电极和所述顶部电极具有重叠区域A，所述重叠由所述顶部电极在基本上垂直于所述底部平面的方向上投影到所述底部电极上而限定电极。此外，该器件包括位于所述底部电极和所述顶部电极之间的压电层和在压电层和底部电极之间的介电层。该装置还包括用于可逆地改变装置的内部阻抗的装置。可以通过改变电介质层的厚度，通过改变底部电极和顶部电极之间的重叠或通过在电极之间移动不同的介电材料来调节电容。

13. 发明公开

EP3232570A3 THIN-FILM BULK ACOUSTIC RESONATOR, SEMICONDUCTOR APPARATUS COMPRISING OF SUCH AN ACOUSTIC RESONATOR, AND MANUFACTURE THEREOF 有权转让
标题翻译：薄膜散装声学谐振器，包含这种声学谐振器的半导体装置及其制造方法
公开(公告)号：EP3232570A3
公开(公告)日：2017-12-20
申请号：EP17158742.1
申请日：2017-03-01
申请人： Semiconductor Manufacturing International Corporation (Shanghai) , Semiconductor Manufacturing International Corporation (Beijing)
发明人： HUANG, Herbhe , DROWLEY, Clifford Ian , ZHU, Jiguang , LI, Haiting
IPC分类号： H03H9/10 , H03H9/17 , H03H9/56
CPC分类号： H03H9/171 , H01L27/20 , H03H3/0073 , H03H3/02 , H03H9/02007 , H03H9/0547 , H03H9/173 , H03H9/587 , H03H2003/021 , H03H2003/027 , H03H2009/155
摘要： A thin-film bulk acoustic resonator (200), a semiconductor apparatus including the acoustic resonator and its manufacturing methods are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer (201), a first cavity (203) inside the lower dielectric layer (202), an upper dielectric layer (204), a second cavity inside the upper dielectric layer, and a piezoelectric film (2052) that is located between the first and the second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film in this present invention is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.
摘要翻译：提出了薄膜体声波谐振器（200），包括声谐振器的半导体装置及其制造方法。薄膜体声波谐振器包括下介电层（201），下介电层（202）内的第一腔体（203），上介电层（204），上介电层内的第二腔体和压电薄膜（2052），其位于第一腔和第二腔之间并连续分离这两个腔。第一腔体和第二腔体的平面图具有重叠区域，该重叠区域是不具有任何平行边的多边形。本发明中的压电膜是连续膜，其中没有任何通孔，因此它可以提供改善的声学共振性能。

14. 发明公开

EP2484008A4 A MICROMECHANICAL RESONATOR 有权转让
标题翻译：微机械谐振器
公开(公告)号：EP2484008A4
公开(公告)日：2014-06-18
申请号：EP10821619
申请日：2010-09-27
申请人： TEKNOLOGIAN TUTKIMUSKESKUS VTT
发明人： OJA AARNE , PENSALA TUOMAS , MELTAUS JOHANNA
IPC分类号： H03H9/02 , B81B3/00 , B81B7/00 , H03H3/007 , H03H3/013 , H03H3/02 , H03H9/24
CPC分类号： H03H9/02259 , B81B3/0081 , B81B2201/0271 , H03H3/0076 , H03H9/02338 , H03H9/02448 , H03H9/2436 , H03H9/2452 , H03H9/2463 , H03H2003/027 , H03H2003/0407 , H03H2009/02496 , H03H2009/02503 , H03H2009/02511 , H03H2009/241 , H03H2009/2442

15. 发明公开

EP2453495A3 Method for manufacturing piezoelectric element 审中-公开
标题翻译：一种用于生产压电元件的方法
公开(公告)号：EP2453495A3
公开(公告)日：2014-01-22
申请号：EP11185317.2
申请日：2011-10-14
申请人： NGK Insulators, Ltd.
发明人： Ohnishi, Takao , Uetani, Masayuki
IPC分类号： H01L41/22 , H01L41/09
CPC分类号： H01L41/257 , B06B1/0603 , B06B1/0688 , B06B1/0696 , F16K31/005 , H01L41/04 , H01L41/053 , H01L41/0926 , H01L41/0933 , H01L41/0973 , H01L41/27 , H01L41/29 , H01L41/332 , H01L41/338 , H03H3/02 , H03H9/172 , H03H9/178 , H03H2003/022 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156 , Y10T29/49798
摘要： There is provided a method for manufacturing a piezoelectric element, the method having a step of polarizing the fired piezoelectric body while fixing at least two positions in a direction perpendicular to the polarization direction. The method is a means for obtaining a piezoelectric element provided with a thin and flat fired piezoelectric body with no warpage.

16. 发明公开

EP2226934A1 COMPOSITE PIEZOELECTRIC SUBSTRATE MANUFACTURING METHOD 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES PIEZOELEKTRISCHEN VERBUNDSUBSTRATS
公开(公告)号：EP2226934A1
公开(公告)日：2010-09-08
申请号：EP08863984.4
申请日：2008-10-23
申请人： Murata Manufacturing Co. Ltd.
发明人： KANDO, Hajime , YOSHII, Yoshiharu
IPC分类号： H03H3/08 , H01L41/09 , H01L41/18 , H01L41/22 , H03H3/02 , H03H9/17
CPC分类号： H01L41/27 , G02F1/035 , H01L41/187 , H01L41/25 , H01L41/257 , H01L41/312 , H01L41/335 , H01L41/337 , H03H3/02 , H03H3/08 , H03H2003/021 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： The present invention provides a method for manufacturing a composite piezoelectric substrate capable of forming an ultrathin piezoelectric film having a uniform thickness by efficiently using a piezoelectric material. a) A piezoelectric substrate (2) and a supporting substrate (10) are prepared, b) ions are implanted from a surface (2a) of the piezoelectric substrate (2) to form a defective layer (4) in a region having a predetermined depth from the surface (2a) of the piezoelectric substrate (2), c) impurities adhering to at least one of the surface (2a) of the piezoelectric substrate (2) in which the defective layer (4) is formed and a surface (10a) of the supporting substrate (1) are removed to directly expose the constituent atoms of the surfaces (2a and 10a) and activate them, d) the supporting substrate (10) is bonded to the surface (2a) of the piezoelectric substrate (2) to form a substrate bonded body (40), e) the substrate bonded body (40) is separated at the defective layer (4) formed in the piezoelectric substrate (2) so that a separation layer (3) between the surface (2a) of the piezoelectric substrate (2) and the defective layer (4) is separated from the piezoelectric substrate (2) and bonded to the supporting substrate (10) to form a composite piezoelectric substrate (30), and f) the surface (3a) of the separation layer (3) of the composite piezoelectric substrate (30) is smoothed.
摘要翻译：本发明提供一种能够通过有效地使用压电材料形成具有均匀厚度的超薄压电膜的复合压电基片的制造方法。 a）制备压电基板（2）和支撑基板（10），b）从压电基板（2）的表面（2a）注入离子，在具有预定的区域的区域中形成缺陷层（4）从压电基板（2）的表面（2a）的深度，c）附着到其中形成有缺陷层（4）的压电基板（2）的表面（2a）中的至少一个的杂质和表面去除支撑基板（1）的直径10a（10a）以直接暴露表面（2a和10a）的构成原子并激活它们，d）支撑基板（10）结合到压电基板的表面（2a） 2）形成基板接合体（40），e）在形成在压电基板（2）的缺陷层（4）处分离基板接合体（40），使得在表面压电基板（2）的缺陷层（2a）和缺陷层（4）与压电基板（2）分离结合到支撑基板（10）上以形成复合压电基板（30），以及f）复合压电基板（30）的分离层（3）的表面（3a）被平滑化。

17. 发明公开

EP1548935A1 Micromachined film bulk acoustic resonator 审中-公开
标题翻译：微机械薄膜体声波谐振器
公开(公告)号：EP1548935A1
公开(公告)日：2005-06-29
申请号：EP03447311.6
申请日：2003-12-24
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
发明人： Tilmans, Harrie , Pan, Wanling
IPC分类号： H03H9/02
CPC分类号： H03H3/04 , H01G5/18 , H01G5/38 , H03H9/02102 , H03H9/172 , H03H2003/022 , H03H2003/027 , H03H2009/241
摘要： The present invention provides an FBAR device with a means for internally varying a capacitance. The device comprises a bottom electrode and a top electrode, said bottom electrode and said top electrode have an overlap area A, the overlap being defined by the projection of the top electrode onto the bottom electrode in a direction substantially perpendicular to the plane of the bottom electrode. Furthermore, the device comprises a piezoelectric layer in between said bottom electrode and said top electrode and a dielectric layer in between the piezoelectric layer and the bottom electrode. The capacitance may be tuned by either varying the thickness of the dielectric layer or by changing the overlap between the bottom electrode and the top electrode. The bottom electrode may be made from a different material than the top electrode to compensate for temperature drift.
摘要翻译：本发明提供了一种具有用于内部改变电容的装置的FBAR装置。该装置包括底部电极和顶部电极，所述底部电极和所述顶部电极具有重叠区域A，所述重叠由顶部电极在底部电极上在基本垂直于底部平面的方向上的投影限定电极。此外，该装置包括位于所述底部电极和所述顶部电极之间的压电层以及位于压电层和底部电极之间的介电层。可通过改变介电层的厚度或通过改变底部电极与顶部电极之间的重叠来调谐电容。底部电极可以由与顶部电极不同的材料制成以补偿温度漂移。

18. 发明公开

EP1547244A2 PIEZOELECTRIC MEMS RESONATOR 审中-公开
标题翻译： PIEZOELEKTRISCHER MEMS谐振器
公开(公告)号：EP1547244A2
公开(公告)日：2005-06-29
申请号：EP03813044.9
申请日：2003-07-31
申请人： Charles Stark Drapper Laboratory
发明人： DUWEL, Amy, E. , CARTER, David, J. , MESCHER, Mark, J. , VARGHESE, Mathew , ANTKOWIAK, Bernard, M. , WEINBERG, Marc, S.
IPC分类号： H03H3/00
CPC分类号： H03H3/02 , H03H9/172 , H03H9/564 , H03H9/586 , H03H2003/027 , H03H2009/241 , H04R17/00 , Y10T29/42 , Y10T29/435
摘要： A longitudinal mode resonator that includes a substrate and a bar that is suspended relative to the substrate. The bar is suspended such that it is free to expand and contract longitudinally in response to the application of an electric field across its thickness. The expansion and contraction of the bar achieves resonance in response to the field having a frequency substantially equal to the fundamental frequency of the bar.

19. 发明公开

EP3202037A1 PROCEDE DE REALISATION COLLECTIVE DE FILTRES A ONDES ACOUSTIQUES 有权
标题翻译： PROCEDE DE REALIZATION COLLECTIVE DE FILTRES A ONDES ACOUSTIQUES
公开(公告)号：EP3202037A1
公开(公告)日：2017-08-09
申请号：EP15731961.7
申请日：2015-06-29
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： REINHARDT, Alexandre , DAVID, Jean-Baptiste
IPC分类号： H03H9/54 , H03H3/007 , H03H9/02 , H03H9/56 , H03H9/70 , H03H9/72 , H03H3/02 , H03H3/04
CPC分类号： H03H3/04 , H03H3/0073 , H03H3/0076 , H03H7/38 , H03H9/542 , H03H9/545 , H03H9/568 , H03H9/64 , H03H9/6403 , H03H9/70 , H03H9/706 , H03H9/725 , H03H2003/0071 , H03H2003/027 , H03H2003/0464 , H03H2003/0471 , H03H2003/0478 , H03H2009/02165 , H03H2009/02173 , H03H2009/02196 , H03H2009/02204 , H03H2009/02496 , H03H2210/012 , H03H2210/023 , H03H2210/033
摘要： The invention relates to a method for the batch production of acoustic wave filters, including the following main steps: synthesising N theoretical filters, each filter being defined on the basis of a group of j theoretical resonator(s) having a triplet C
0ij,eq , ω
rij,eq and ω
aij,eq , said parameters being grouped together into one or more sub-groups; determining a reference resonator structure for each sub-group, which naturally has a resonance frequency ω
r,ref where ω
aij,eq r,ref rij,eq ; determining, for each theoretical resonator, a basic building block comprising an intermediate resonator R';
j , a parallel reactance Xp
ij and/or a series reactance Xs
ij , the intermediate resonator R'
ij having a triplet C
0ij , ω
r,ref and ω
a,ref , the parameters ω
0ij , Xp
ij et/ou Xs
ij being defined such that the basic building block has a triplet: C
0ij,eq , ω
rij,eq and ω
aij,eq ; determining the geometric dimensions of the actual resonators R
ij so that they have a capacitance C
0ij ; producing each one of said actual resonators; associating series and/or parallel reactances with said actual resonators in order to form the basic building blocks. The present invention makes it possible for a bank of acoustic filters to be produced on the same chip. Whereas, according to the production methods of the prior art, each separate filter requires the own technological stack thereof and therefore a different production batch, the invention makes it possible to use the same production batch for a wide variety of filters.
摘要翻译：谐振电路包括输入端子和输出端子，并且至少包括：一组N个谐振器，其中N≥1，谐振器具有相同的谐振频率和相同的反谐振频率; 具有非零电抗的第一和第二阻抗匹配元件，所述第一元件与所述谐振器组串联，并且所述第二元件与所述谐振器组并联，所述谐振电路包括：用于控制一组谐振器，使该组的静态电容能够被固定在第一值; 第二控制装置，使第一阻抗匹配元件的阻抗和第二元件的阻抗固定在第二值; 第一和第二值使得由该组的静态电容，第一元件的阻抗和第二元件的阻抗组成的三元组可以用于确定以下三个参数：特性阻抗Zc 由所述组，第一阻抗匹配元件和第二匹配元件形成的组件; 组件的共振频率ωr; 该组件的反共振频率ωa，以便在选定的特性阻抗处稳定电路的阻抗。

20. 发明公开

EP3132473A1 PIEZOELECTRIC MEMS RESONATOR WITH INTEGRATED PHASE CHANGE MATERIAL SWITCHES 审中-公开
标题翻译： PIEZOELEKTRISCHER微机电谐振器MIT INTEGRIERTEN SPEICHERSTOFFSCHALTERN
公开(公告)号：EP3132473A1
公开(公告)日：2017-02-22
申请号：EP15780688.6
申请日：2015-04-17
申请人： Northeastern University
发明人： RINALDI, Mateo , HUMMEL, Gwendolyn
IPC分类号： H01L41/00 , H01L41/18 , H03H3/02 , H03H9/15 , H03H9/54
CPC分类号： H03H9/133 , H01L41/18 , H01L45/06 , H01L45/141 , H01L45/144 , H03H3/0073 , H03H3/02 , H03H9/02228 , H03H9/131 , H03H9/205 , H03H9/54 , H03H2003/027 , H03H2009/155
摘要： A monolithic integration of phase change material (PCM) switches with a MEMS resonator is provided to implement switching and reconfiguration functionalities. MEMS resonator includes a piezoelectric material to control terminal connections to the electrodes. The PCM is operable between an ON state and an OFF state by application of heat, which causes the phase change material to change from an amorphous state to a crystalline state or from a crystalline state to an amorphous state, the amorphous state and the crystalline state each associated with one of the ON state and the OFF state. A method of fabricating the MEMS resonator with phase change material is provided. A reconfigurable filter system using the MEMS resonators is also provided.
摘要翻译：提供了具有MEMS谐振器的相变材料（PCM）开关的单片集成以实现切换和重新配置功能。 MEMS谐振器包括用于控制与电极的端子连接的压电材料。 PCM通过施加热量在ON状态和OFF状态之间可操作，这导致相变材料从非晶状态转变为结晶状态或从结晶状态转变为非晶状态，非晶状态和结晶状态每个与ON状态和OFF状态中的一个相关联。提供了制造具有相变材料的MEMS谐振器的方法。还提供了使用MEMS谐振器的可重构滤波器系统。

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