专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3240054A4 PIEZOELECTRIC MATERIAL AND METHOD FOR PRODUCING SAME, PIEZOELECTRIC ELEMENT, AND DEVICE USING PIEZOELECTRIC ELEMENT 审中-公开
公开(公告)号：EP3240054A4
公开(公告)日：2018-08-01
申请号：EP14909115
申请日：2014-12-26
申请人： SEIKO EPSON CORP
发明人： SUMI KOJI , KITADA KAZUYA , SAKAI TOMOHIRO , HAMADA YASUAKI , ISSHIKI TETSUYA , KIMURA SATOSHI , ITO AKIO , HANDA TSUNEO
IPC分类号： H01L41/187 , C04B35/00 , C04B35/462 , C04B35/468 , C04B35/475 , C04B35/495 , C04B35/622 , H01L41/39
CPC分类号： H01L41/187 , C04B35/462 , C04B35/4682 , C04B35/475 , C04B35/495 , C04B35/62218 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3213 , C04B2235/3232 , C04B2235/3234 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/3262 , C04B2235/3268 , C04B2235/3272 , C04B2235/3274 , C04B2235/3293 , C04B2235/3298 , C04B2235/44 , C04B2235/449 , C04B2235/76 , C04B2235/768 , H01L41/0474 , H01L41/39
摘要： Provided is a piezoelectric material containing: a first component which is a rhombohedral crystal in a single composition, in which a Curie temperature is Tc1, and which is composed of a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, in which a Curie temperature Tc2 is higher than Tc1, and which is composed of a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, in which a Curie temperature Tc3 is equal to or higher than Tc2, and which is composed of a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is set as ± and ± × Tc3 + (1 - ±) × Tc1 is set as Tc4, |Tc4-Tc2| is 50°C or lower.

2. 发明公开

EP3341931A1 AKUSTISCHER SENSOR MIT EINEM GEHÄUSE UND EINEM AN DIESEM GEHÄUSE ANGEORDNETEN MEMBRANELEMENT 有权转让
公开(公告)号：EP3341931A1
公开(公告)日：2018-07-04
申请号：EP16732296.5
申请日：2016-06-27
申请人： Robert Bosch GmbH
发明人： KARL, Matthias
IPC分类号： G10K9/22 , G10K13/00
CPC分类号： G10K9/122 , G10K9/22 , G10K13/00 , H01L41/187
摘要： The present invention relates to an acoustic sensor (1) comprising a carrier element (2), a membrane element (3), which is arranged on a first side of the carrier element (2), and an electroacoustic transducer (4), which is arranged on a side (4a) of the membrane element (3), said side being directed towards the carrier element (2), and is intended to cause at least one region of the membrane element (3) to oscillate, wherein, on at least one peripheral region (5), the membrane element (3) has a retaining region (6), which extends in the direction of the carrier element (2) and engages around a sub-region (7) of the carrier element (2).

4. 发明公开

EP3276687A1 FERROELECTRIC THIN-FILM LAMINATE SUBSTRATE, FERROELECTRIC THIN-FILM ELEMENT, AND MANUFACTURING METHOD OF FERROELECTRIC THIN-FILM LAMINATE SUBSTRATE 有权
标题翻译：铁电薄膜层压基板，铁电薄膜元件及铁电薄膜层压基板的制造方法
公开(公告)号：EP3276687A1
公开(公告)日：2018-01-31
申请号：EP16768324.2
申请日：2016-03-02
申请人： Sumitomo Chemical Company Limited
发明人： HORIKIRI, Fumimasa , SHIBATA, Kenji , WATANABE, Kazutoshi , NOGUCHI, Masaki , SUENAGA Kazufumi
IPC分类号： H01L41/047 , H01L21/8246 , H01L27/105 , H01L37/02 , H01L41/187 , H01L41/29
CPC分类号： H01L41/187 , C23C14/34 , H01L27/105 , H01L37/02 , H01L41/047 , H01L41/09 , H01L41/113 , H01L41/22 , H01L41/29 , H01L41/312 , H01L41/316 , H01L41/45
摘要： There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode adhesive layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (K 1-x Na x )NbO 3 , 0.4 ≤ x ≤ 0.7); the upper electrode layer is made of gold; the upper electrode adhesive layer is made of a metal that has less oxidizability than titanium and can make a solid solution alloy without generating an intermetallic compound with gold; and a part of the upper electrode adhesive layer and a part of the upper electrode layer are alloyed.
摘要翻译：提供了一种铁电薄膜叠层基板，其包括基板，并且还包括顺序地堆叠在基板上的下电极层，铁电薄膜层，上电极粘合剂层和上电极层，其中：下电极层由铂或铂合金制成; 铁电薄膜层由铌酸钠钾（典型化学式为（K1-xNax）NbO3，0.4≤x≤0.7）制成; 上电极层由金制成; 上部电极粘合剂层由氧化性比钛小的金属形成，并且不会与金产生金属间化合物而形成固溶合金; 并且上电极粘合剂层的一部分和上电极层的一部分被合金化。

5. 发明公开

EP3144987A4 FERROELECTRIC THIN FILM, SUBSTRATE WITH PIEZOELECTRIC THIN FILM, PIEZOELECTRIC ACTUATOR, INKJET HEAD, AND INKJET PRINTER 有权
公开(公告)号：EP3144987A4
公开(公告)日：2018-01-10
申请号：EP15792322
申请日：2015-04-27
申请人： KONICA MINOLTA INC
发明人： MAWATARI KENJI
IPC分类号： H01L41/187
CPC分类号： B41J2/14201 , B41J2/14 , H01L41/0815 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/1875 , H01L41/1876 , H01L41/319
摘要： This ferroelectric thin film comprises lead zirconate titanate niobate. In said ferroelectric thin film, the ratio (a) of number of moles of lead to the total number of moles of zirconium, titanium, and niobium is greater than or equal to 100%; the ratio (b) of the number of moles of niobium to the total number of moles of zirconium, titanium, and niobium is between 10% and 20%, inclusive; and the ratio (c) of the number of moles of zirconium to the total number of moles of zirconium and titanium is between 52% and 59%, inclusive. The film stress exhibited by the ferroelectric thin film is between 100 and 250 MPa, inclusive.

6. 发明公开

EP3261138A1 PIEZOELECTRIC PTZT FILM, AND PROCESS FOR PRODUCING LIQUID COMPOSITION FOR FORMING SAID PIEZOELECTRIC FILM 有权转让
标题翻译：压电PTZT膜及用于制造用于形成所述压电膜的液体组合物的方法
公开(公告)号：EP3261138A1
公开(公告)日：2017-12-27
申请号：EP16752431.3
申请日：2016-02-15
申请人： Mitsubishi Materials Corporation
发明人： DOI Toshihiro , SOYAMA Nobuyuki
IPC分类号： H01L41/187 , B41J2/14 , B41J2/16 , C01G35/00 , H01L41/318 , H01L41/319 , H01L41/43
CPC分类号： H01L41/18 , B41J2/14 , B41J2/16 , C01G35/00 , C01G35/006 , C04B35/499 , H01L41/187 , H01L41/318 , H01L41/319 , H01L41/43
摘要： A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, β-diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film. When the total amount of the Ta alkoxide, the Zr alkoxide, and the Ti alkoxide is set as 1 mole, the liquid composition for forming a piezoelectric PTZT film includes the diol and the β-diketones with fractions so that the content of diol is 7 to 11 moles and the content of β-diketones is 1.5 to 3.0 moles.
摘要翻译：压电PTZT膜由具有包含Pb，Ta，Zr和Ti的钙钛矿结构的金属氧化物形成，其中所述金属氧化物还包含碳，并且所述碳的含量为80质量ppm至800质量ppm。在制造用于形成压电膜的液体组合物的方法中，使Ta醇盐，Zr醇盐，β-二酮和二醇回流，将Ti醇盐加入通过回流获得的第一合成溶液中，然后回流再将Pb化合物加入到通过进行额外的回流得到的第二合成溶液中，然后再进行回流，从进行附加回流得到的第三合成溶液中除去溶剂，然后用醇以制造用于形成压电PTZT膜的液体组合物。当Ta醇盐，Zr醇盐和Ti醇盐的总量设定为1摩尔时，用于形成压电PTZT膜的液体组合物包含具有分数的二醇和β-二酮，使得二醇的含量为7 至11摩尔，β-二酮的含量为1.5至3.0摩尔。

7. 发明公开

EP3240054A1 PIEZOELECTRIC MATERIAL AND METHOD FOR PRODUCING SAME, PIEZOELECTRIC ELEMENT, AND DEVICE USING PIEZOELECTRIC ELEMENT 审中-公开
标题翻译：压电材料及其制造方法，压电元件和使用压电元件的器件
公开(公告)号：EP3240054A1
公开(公告)日：2017-11-01
申请号：EP14909115.9
申请日：2014-12-26
申请人： Seiko Epson Corporation
发明人： SUMI, Koji , KITADA, Kazuya , SAKAI, Tomohiro , HAMADA, Yasuaki , ISSHIKI, Tetsuya , KIMURA, Satoshi , ITO, Akio , HANDA, Tsuneo
IPC分类号： H01L41/187 , C04B35/00 , H01L41/39
CPC分类号： H01L41/187 , C04B35/462 , C04B35/4682 , C04B35/475 , C04B35/495 , C04B35/62218 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3213 , C04B2235/3232 , C04B2235/3234 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/3262 , C04B2235/3268 , C04B2235/3272 , C04B2235/3274 , C04B2235/3293 , C04B2235/3298 , C04B2235/44 , C04B2235/449 , C04B2235/76 , C04B2235/768 , H01L41/0474 , H01L41/39
摘要： Provided is a piezoelectric material containing: a first component which is a rhombohedral crystal in a single composition, in which a Curie temperature is Tc1, and which is composed of a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, in which a Curie temperature Tc2 is higher than Tc1, and which is composed of a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, in which a Curie temperature Tc3 is equal to or higher than Tc2, and which is composed of a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is set as α and α × Tc3 + (1 - α) × Tc1 is set as Tc4, |Tc4-Tc2| is 50°C or lower.
摘要翻译：本发明提供一种压电体材料，其含有：第一成分为单一组成的三方晶系结晶，居里温度为Tc1，由具有钙钛矿型结构的无铅系复合氧化物构成; 在单一组成中居里温度Tc2高于Tc1且由具有钙钛矿型结构的无铅系复合氧化物构成的除菱形晶体以外的结晶的第2成分; 第三成分为单一组成的菱形晶体，居里温度Tc3为Tc2以上，由具有钙钛矿型结构的无铅系复合氧化物构成，不同于第一个组件。当第三成分与第一成分和第三成分之和的摩尔比设为α且α×Tc3 +（1-α）×Tc1设为Tc4时，| Tc4-Tc2 | 是50°C或更低。

8. 发明公开

EP3216894A1 PIEZOELECTRIC ALLOY FILMS 无效转让
标题翻译：压电合金薄膜
公开(公告)号：EP3216894A1
公开(公告)日：2017-09-13
申请号：EP17160064.6
申请日：2017-03-09
申请人： Teledyne Dalsa Semiconductor Inc.
发明人： DAOUST, Patrick , COIA, Cedrik , DESJARDINS, Patrick , MASUT, Remo
IPC分类号： C23C14/06 , C23C14/34 , H01L41/187 , H01L41/316
CPC分类号： H01L41/18 , C23C14/0641 , C23C14/3464 , H01L41/0805 , H01L41/187 , H01L41/314 , H01L41/316
摘要： A thin film X y Al (1-y) N alloy preferably deposited with an intrinsic tensile stress significantly enhances the piezoelectric properties of AlN. The alloy contains y percent of the compound XN, where X is selected from the group consisting of Yb, Ho, Dy, Lu, Tm, Tb, and Gd. The percentage of XN preferably lies in the range 10-60%, and the stress is preferably in the range 200MPa - 1.5GPa. The film is useful in MEMS devices.
摘要翻译：优选用固有拉伸应力沉积的薄膜XyAl（1-y）N合金显着增强了AlN的压电性能。该合金含有y％的化合物XN，其中X选自Yb，Ho，Dy，Lu，Tm，Tb和Gd。 XN的百分比优选在10-60％的范围内，并且应力优选在200MPa-1.5GPa的范围内。该电影在MEMS器件中很有用。

9. 发明授权

EP2045846B1 Piezoelectric/electrostrictive ceramic composition and piezoelectric/electrostrictive device 有权
标题翻译： Piezoelektrische / elektrostriktive Keramikzusammensetzung und piezoelektrische / elektrostriktive Vorrichtung
公开(公告)号：EP2045846B1
公开(公告)日：2017-06-07
申请号：EP08253214
申请日：2008-10-02
申请人： NGK INSULATORS LTD
发明人： OZAWA SHUICHI , YAMAGUCHI HIROFUMI
IPC分类号： H01L41/187 , C04B35/495 , H01L41/083 , H01L41/09
CPC分类号： C04B35/495 , C04B2235/3201 , C04B2235/3203 , C04B2235/3251 , C04B2235/3267 , C04B2235/3294 , C04B2235/449 , C04B2235/768 , C04B2235/79 , H01L41/083 , H01L41/0973 , H01L41/187

10. 发明公开

EP3110628A1 VARIABLE THICKNESS DIAPHRAGM FOR A WIDEBAND ROBUST PIEZOELECTRIC MICROMACHINED ULTRASONIC TRANSDUCER (PMUT) 有权
标题翻译：具有可变厚度宽带稳健压电微装配式超声波换能器膜（PMUT）
公开(公告)号：EP3110628A1
公开(公告)日：2017-01-04
申请号：EP15754603.7
申请日：2015-02-27
申请人： The Regents of the University of California
发明人： BOSER, Bernhard , HORSLEY, David , PRZYBYLA, Richard , ROZEN, Ofer , SHELTON, Stefon
IPC分类号： B60B1/06
CPC分类号： H01L41/335 , B06B1/0622 , B06B1/0666 , G10K9/121 , G10K9/122 , G10K13/00 , H01L41/083 , H01L41/0973 , H01L41/1138 , H01L41/187 , H01L41/332
摘要： A diaphragm for a piezoelectric micromachined ultrasonic transducer (PMUT) is presented having resonance frequency and bandwidth characteristics which are decoupled from one another into independent variables. Portions of at least the piezoelectric material layer and backside electrode layer are removed in a selected pattern to form structures, such as ribs, in the diaphragm which retains stiffness while reducing overall mass. The patterned structure can be formed by additive, or subtractive, fabrication processes.
摘要翻译：提出一种用于压电微机械超声换能器隔膜（PMUT）具有彼此解耦成独立变量的谐振频率和带宽特性。至少在压电材料层和背面电极层的部分在选定的图案被去除，以形成结构，：诸如肋，在隔膜保留刚度，同时降低整体质量。该图案化结构可通过添加剂，或减法，制造工艺来形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式