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1. 发明公开

EP4372988A1 RESONATOR, RESONATOR ASSEMBLY, FILTER, ELECTRONIC DEVICE, AND MANUFACTURING METHOD 审中-实审
公开(公告)号：EP4372988A1
公开(公告)日：2024-05-22
申请号：EP22940965.1
申请日：2022-11-30
申请人： JWL (Zhejiang) Semiconductor Co., Ltd.
发明人： LI, Linping
IPC分类号： H03H9/02 , H03H9/54
摘要： A resonator, a resonator assembly, a filter, an electronic device, and a method for manufacturing the resonator. The resonator comprises: a substrate, comprising a first surface and a second surface opposite to each other; a first electrode, located on the first surface, where the first electrode comprises a first protruding portion protruding away from the first surface and a first flat portion attached on the first surface, and a cavity is formed between the first protruding portion and the first surface; a piezoelectric layer, located at a side of the first electrode away from the substrate, where the piezoelectric layer extends in parallel with the first surface; and a second electrode, located at a side of the piezoelectric layer away from the first electrode. Since the piezoelectric layer extends in parallel with the first surface, the variation of stress is small throughout the entire piezoelectric layer, which ensures consistency of a piezoelectric performance of the piezoelectric layer. The piezoelectric layer having small deformation renders a mechanical structure stable, and is less likely break under an external impact.

2. 发明授权

EP2974013B1 REACTANCE FILTER COMPRISING ACOUSTIC WAVES RESONATORS 有权转让
公开(公告)号：EP2974013B1
公开(公告)日：2022-11-23
申请号：EP13709251.6
申请日：2013-03-15
发明人： DURNER, Ralph , CHALLA, Ravi , TILL, Wolfgang , ALEH, Loseu
IPC分类号： H03H9/02 , H03H9/54 , H03H9/60 , H03H9/64 , H03H9/70 , H03H9/72

3. 发明公开

EP4089919A1 ELECTRONIC DEVICE AND FORMATION METHOD THEREFOR 审中-实审
公开(公告)号：EP4089919A1
公开(公告)日：2022-11-16
申请号：EP22742201.1
申请日：2022-01-19
申请人： Semiconductor Manufacturing Electronics (Shaoxing) Corporation
发明人： FENG, Xueli , XIANG, Shaohua , WANG, Chong , SHAN, Weizhong
IPC分类号： H03H9/70 , H03H9/54 , H03H9/58 , H03H9/205 , H03H9/02 , H03H3/02 , H03H3/04
摘要： An electronic device and a method of forming the same are disclosed. An emitter resonator and a reception cap cavity are formed on and in a first wafer, and an emitter cap cavity and a reception resonator are formed in and on a second wafer. After bonding together the first and second wafers, an emitter filter is formed in an emission region, and a reception filter is formed in a receiving region. The method provided in the present invention not only can simplify the fabrication process of the device and improve its accuracy and stability, but also facilitates integration of the emitter and receives filters in a same chip, which results in a higher degree of integration of the device and a more compact package size thereof.

4. 发明公开

EP4089918A1 BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD, BULK ACOUSTIC WAVE RESONATOR UNIT, FILTER AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4089918A1
公开(公告)日：2022-11-16
申请号：EP20896703.4
申请日：2020-04-24
申请人： Tianjin University , Rofs Microsystem (Tianjin) Co., Ltd
发明人： ZHANG, Menglun , PANG, Wei , YANG, Qingrui
IPC分类号： H03H9/17 , H03H9/02 , H03H3/02 , H03H9/54
摘要： The present disclosure relates to a single crystal thin film bulk acoustic wave resonator, including: a substrate; an acoustic mirror; a bottom electrode connected with the bottom electrode pins; a top electrode connected with the top electrode pins; and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein: the piezoelectric layer is a single crystal thin film piezoelectric layer; the acoustic mirror, the bottom electrode, the top electrode and the single crystal thin film piezoelectric layer together form an effective area of the resonator in an overlapping region in the thickness direction of the resonator. The non-lead end of the top electrode and the non-lead end of the bottom electrode both can be spaced apart from the edge of the acoustic mirror in the projection in the thickness direction of the resonator. The present disclosure further relates to a method for manufacturing a single crystal thin film bulk acoustic wave resonator, a single crystal thin film bulk acoustic resonator unit having the above single crystal thin film resonator, and an electronic device.

5. 发明公开

EP4057507A1 FILTER CIRCUIT, DUPLEXER, AND COMMUNICATION APPARATUS 审中-公开
公开(公告)号：EP4057507A1
公开(公告)日：2022-09-14
申请号：EP20894019.7
申请日：2020-11-28
申请人： Huawei Technologies Co., Ltd.
发明人： GU, Jian , WANG, Weibiao , LIU, Zhiyu , TANG, Qingwu , ZHANG, Lei
IPC分类号： H03H9/54
摘要： A filter circuit (100) with good passive inter-modulation performance, a duplexer (100a) including the filter circuit (100), and a communication apparatus (1) are disclosed. The filter circuit (100) includes an input port (In) for receiving a radio frequency signal, a series resonator unit (110), a parallel resonator unit (120), and an output port (Out). The series resonator unit (110) is connected between the input port (In) and the output port (Out). The parallel resonator unit (120) cooperates with the series resonator unit (110) to filter the radio frequency signal, and the radio frequency signal is output through the output port (Out). The parallel resonator unit (120) includes at least two parallel resonance tributaries (120a and 120b) that are connected in parallel to each other. The parallel resonance tributaries (120a and 120b) are both connected between a first node (Nout), between the input port (In) and the output port (Out), and a grounding terminal (GND). The parallel resonator tributaries (120a and 120b) each include at least one parallel resonator. A parallel resonator unit is a parallel resonator unit at a level closest to the output port (Out). The parallel resonator includes a first electrode and a second electrode. An electrode, connected to the first node (Nout), in each parallel resonator tributary is the same.

6. 发明公开

EP3506502A3 BANDPASS FILTER USING COUPLED ACOUSTIC RESONATORS 有权
公开(公告)号：EP3506502A3
公开(公告)日：2019-10-30
申请号：EP18210402.6
申请日：2018-12-05
申请人： Infineon Technologies AG
发明人： BAUDER, Rüdiger , TIMME, Hans-Jörg , BOGNER, Andreas
IPC分类号： H03H9/54 , H03H9/58 , H03H9/02 , H03H9/00 , H03H9/05 , H04B1/04 , H04B1/525 , H03H7/01 , H03H9/60 , H03H3/02 , H04B1/00
摘要： A bandpass filter includes a capacitor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

7. 发明公开

EP3506501A3 NOTCH FILTERS BASED ON COUPLED ACOUSTIC RESONATORS 有权
公开(公告)号：EP3506501A3
公开(公告)日：2019-10-30
申请号：EP18210357.2
申请日：2018-12-05
申请人： Infineon Technologies AG
发明人： BAUDER, Rüdiger , BOGNER, Andreas , TIMME, Hans-Jörg
IPC分类号： H03H9/54 , H03H9/58 , H03H9/02 , H03H9/05 , H04B1/04 , H04B1/525 , H03H7/01 , H03H9/60 , H03H3/02 , H04B1/00
摘要： A notch filter includes a first inductor (Lp) coupled between an input node (IN) and an output node (OUT), a dual-resonator structure (602, 604) coupled between the input node and the output node.

8. 发明公开

EP3506500A3 NOTCH FILTERS BASED ON COUPLED ACOUSTIC RESONATORS 有权
公开(公告)号：EP3506500A3
公开(公告)日：2019-10-30
申请号：EP18210364.8
申请日：2018-12-05
申请人： Infineon Technologies AG
发明人： TIMME, Hans-Jörg , BAUDER, Rüdiger , BOGNER, Andreas
IPC分类号： H03H9/05 , H03H9/54 , H03H9/58 , H03H9/02 , H03H3/02 , H04B1/04 , H04B1/525 , H03H9/60 , H03H7/01 , H03H9/00 , H04B1/00
摘要： A notch filter includes a first inductor coupled between an input node and an output node, a dual-resonator structure coupled between the input node and the output node, and a second inductor coupled between the dual-resonator structure and ground.

9. 发明公开

EP3506499A3 TUNABLE RESONATOR ELEMENT, FILTER CIRCUIT AND METHOD 有权
公开(公告)号：EP3506499A3
公开(公告)日：2019-10-09
申请号：EP18210383.8
申请日：2018-12-05
申请人： Infineon Technologies AG
发明人： TIMME, Hans-Jörg , BAUDER, Rüdiger
IPC分类号： H03H3/02 , H03H9/54 , H03H9/58 , H03H9/60 , H03H9/02 , H03H9/05
摘要： A resonator element for use in a filter (1800) is provided. The resonator element (1812,1814,1816) includes a first resonator (1812A,1814A,1816A) acoustically coupled to a second (1812B,1814B,1816B) or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit (1812C,1814C,1816C) is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

10. 发明公开

EP3506499A2 TUNABLE RESONATOR ELEMENT, FILTER CIRCUIT AND METHOD 有权
公开(公告)号：EP3506499A2
公开(公告)日：2019-07-03
申请号：EP18210383.8
申请日：2018-12-05
申请人： Infineon Technologies AG
发明人： TIMME, Hans-Jörg , BAUDER, Rüdiger
IPC分类号： H03H3/02 , H03H9/54 , H03H9/58 , H03H9/60 , H03H9/02 , H03H9/05
摘要： A resonator element for use in a filter (1800) is provided. The resonator element (1812,1814,1816) includes a first resonator (1812A,1814A,1816A) acoustically coupled to a second (1812B,1814B,1816B) or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit (1812C,1814C,1816C) is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

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