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1. 发明公开

EP1548935A1 Micromachined film bulk acoustic resonator 审中-公开
标题翻译：微机械薄膜体声波谐振器
公开(公告)号：EP1548935A1
公开(公告)日：2005-06-29
申请号：EP03447311.6
申请日：2003-12-24
申请人： INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
发明人： Tilmans, Harrie , Pan, Wanling
IPC分类号： H03H9/02
CPC分类号： H03H3/04 , H01G5/18 , H01G5/38 , H03H9/02102 , H03H9/172 , H03H2003/022 , H03H2003/027 , H03H2009/241
摘要： The present invention provides an FBAR device with a means for internally varying a capacitance. The device comprises a bottom electrode and a top electrode, said bottom electrode and said top electrode have an overlap area A, the overlap being defined by the projection of the top electrode onto the bottom electrode in a direction substantially perpendicular to the plane of the bottom electrode. Furthermore, the device comprises a piezoelectric layer in between said bottom electrode and said top electrode and a dielectric layer in between the piezoelectric layer and the bottom electrode. The capacitance may be tuned by either varying the thickness of the dielectric layer or by changing the overlap between the bottom electrode and the top electrode. The bottom electrode may be made from a different material than the top electrode to compensate for temperature drift.
摘要翻译：本发明提供了一种具有用于内部改变电容的装置的FBAR装置。该装置包括底部电极和顶部电极，所述底部电极和所述顶部电极具有重叠区域A，所述重叠由顶部电极在底部电极上在基本垂直于底部平面的方向上的投影限定电极。此外，该装置包括位于所述底部电极和所述顶部电极之间的压电层以及位于压电层和底部电极之间的介电层。可通过改变介电层的厚度或通过改变底部电极与顶部电极之间的重叠来调谐电容。底部电极可以由与顶部电极不同的材料制成以补偿温度漂移。

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