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11. 发明公开

EP1160839A3 Exposure apparatus, coating/developing apparatus, method of transferring a substrate, method of producing a device, semiconductor production factory, and method of maintaining an exposure apparatus 审中-公开
标题翻译：曝光装置，涂布，显影装置，用于输送基板，制造器件中，半导体生产工厂的方法方法，以及用于曝光装置的维护方法
公开(公告)号：EP1160839A3
公开(公告)日：2004-07-14
申请号：EP01304750.1
申请日：2001-05-30
申请人： CANON KABUSHIKI KAISHA
发明人： Deguchi, Nobuyoshi, c/o Canon Kabushiki Kaisha
IPC分类号： H01L21/00 , G03F7/20
CPC分类号： H01L21/67126 , G03F7/7075 , G03F7/70808 , G03F7/70841 , G03F7/70908 , G03F7/70933 , G03F7/70991
摘要： An apparatus includes an enclosure having a controllable internal ambient, a gate valve through which a substrate is transferred into or out of the enclosure, and a gas ejection unit for ejecting a gas into a region in close proximity to the gate valve, and in a direction substantially perpendicular to the direction of movement of the substrate as it is transferred into or out of the enclosure. A gas curtain is formed by the gas ejected by the gas ejection unit, such that an opening of the gate valve is shielded by the gas curtain, thereby suppressing intrusion or leakage of an ambient gas which can occur when the substrate is transferred into or out of the apparatus.

12. 发明公开

EP1052553A3 Isolation mounts for use with vacuum chambers and their application in lithographic projection apparatus 审中-公开
标题翻译：绝缘支撑装置用于与真空室和它们在光刻投影装置中使用的使用
公开(公告)号：EP1052553A3
公开(公告)日：2003-08-27
申请号：EP00303229.9
申请日：2000-04-17
申请人： ASML Netherlands B.V.
发明人： Driessen, Johannes Cornelis , Bisschops, Theodorus Hubertus Josephus , Vijfvinkel, Jakob , Dona, Marinus Josephus Jakobus , Meuwese, Mark Theo , Schneider, Ronald Maarten , Mors, Michel Alexander , Visser, Hugo Matthieu
IPC分类号： G03F7/20
CPC分类号： G03F7/709 , F16C32/0603 , F16C33/748 , F16C2300/62 , G03F7/70691 , G03F7/70808 , G03F7/70825 , G03F7/70841
摘要： A reference frame (50) provided in a vacuum chamber is supported by support pillars (41) extending through and isolated from the vacuum chamber walls (11) to isolate the reference frame from vibrations in the vacuum chamber. The gap between the support pillar and the vacuum chamber wall may be sealed by a low-stiffness seal. The low stiffness seal may be a three part seal allowing relative motion in six-degrees of freedom.

13. 发明公开

EP1279070A1 NON-CONTACT SEAL USING PURGE GAS 有权
标题翻译：装置，用于产生在投影光刻系统中的吹扫光路和对应的方法
公开(公告)号：EP1279070A1
公开(公告)日：2003-01-29
申请号：EP01932838.4
申请日：2001-05-02
申请人： Silicon Valley Group, Inc.
发明人： HANSELL, Eric, C. , HERRERA, Jose, V. , HUSE, Richard, L. , IVALDI, Jorge, S. , KREHLEY, Stephen, G. , SHAMALY, Thomas, P.
IPC分类号： G03F7/20
CPC分类号： G03F7/70933 , F16C29/025 , F16C32/0603 , G03F7/70808 , G03F7/70816 , G03F7/70841 , G03F7/70866 , G03F7/70916
摘要： A method and apparatus for providing a purged optical path between an optical source surface (304) and an optical target surface (306) and for permitting relative movement between the optical source surface and the optical target surface is described. The apparatus (302) includes a body (338), a central cavity (316), at least one gas supply bore (328), and at least one gas removal bore (330). The body defines first and second opposing surfaces. The first opposing surface (314) is configured for positioning closely adjacent to the optical target surface (306). The second opposing surface (336) is configured to mate with the optical source surface (304). The central cavity (316) is formed in the body for passing light through the body, the central cavity being open at the first and second opposing surfaces. The at least one gas supply bore (328) is formed in the body for supplying a flow of a purge gas to the central cavity. The at least one gas removal bore (330) is formed in the body at the first opposing surface to remove gas from a gap formed between the first opposing surface and the optical target surface.

14. 发明公开

EP1160839A2 Exposure apparatus, coating/developing apparatus, method of transferring a substrate, method of producing a device, semiconductor production factory, and method of maintaining an exposure apparatus 审中-公开
标题翻译：曝光装置，涂布，显影装置，用于输送基板，制造器件中，半导体生产工厂的方法方法，以及用于曝光装置的维护方法
公开(公告)号：EP1160839A2
公开(公告)日：2001-12-05
申请号：EP01304750.1
申请日：2001-05-30
申请人： CANON KABUSHIKI KAISHA
发明人： Deguchi, Nobuyoshi, c/o Canon Kabushiki Kaisha
IPC分类号： H01L21/00
CPC分类号： H01L21/67126 , G03F7/7075 , G03F7/70808 , G03F7/70841 , G03F7/70908 , G03F7/70933 , G03F7/70991
摘要： An apparatus includes an enclosure having a controllable internal ambient, a gate valve through which a substrate is transferred into or out of the enclosure, and a gas ejection unit for ejecting a gas into a region in close proximity to the gate valve, and in a direction substantially perpendicular to the direction of movement of the substrate as it is transferred into or out of the enclosure. A gas curtain is formed by the gas ejected by the gas ejection unit, such that an opening of the gate valve is shielded by the gas curtain, thereby suppressing intrusion or leakage of an ambient gas which can occur when the substrate is transferred into or out of the apparatus.
摘要翻译：一种装置包括外壳具有可控制的内部环境，通过该基片被转移到或离开所述外壳的闸阀，和一个用于喷射气体进入靠近闸门阀的区域中的气体喷射单元，并且在一个基本上沿垂直于所述衬底的运动方向，因为它被转移到或从盒中。气帘，通过由所述气体喷射单元喷出的气体形成的，检查做了闸阀的开口部被气幕遮蔽，从而能够抑制可发生在衬底被转移到或离开的环境气体的侵入或漏该装置的。

15. 发明公开

EP0909988A1 Photolithographic processing method 失效
标题翻译：光刻处理方法
公开(公告)号：EP0909988A1
公开(公告)日：1999-04-21
申请号：EP98124753.9
申请日：1991-09-25
申请人： CANON KABUSHIKI KAISHA
发明人： Komatsu, Toshiyuki , Sato, Yasue , Kawate, Shin-Ichi
IPC分类号： G03F7/004 , H01L21/311
CPC分类号： H01L21/02071 , C23C16/047 , G03F1/68 , G03F7/00 , G03F7/0035 , G03F7/0042 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/321 , H01L21/32139
摘要： The present invention provides a processing method which comprises a first step of depositing on a substrate (271) a film to be etched (272); a second step of subjecting the film to be etched, to selective irradiation with light to form a protective film having a partially modified surface (273); and a third step of subjecting said film to be etched, to dry etching using said protective film as an etching mask. Said first step and said second step are continuously carried out plural times to respectively deposit on said substrate said film to be etched and said protective film in plurality (274,275,276,277), and thereafter said third step is carried out.
摘要翻译：本发明提供了一种处理方法，包括：第一步，在衬底（271）上沉积待蚀刻的膜（272）; 对所述膜进行蚀刻的第二步骤，用光进行选择性照射以形成具有部分改性表面的保护膜（273）; 以及使用所述保护膜作为蚀刻掩模对所述膜进行蚀刻以进行干法蚀刻的第三步骤。所述第一步骤和所述第二步骤连续进行多次，以分别将所述待蚀刻膜和所述多个保护膜（274,275,276,277）沉积在所述衬底上，然后执行所述第三步骤。

16. 发明公开

EP0908781A3 Photolithographic processing method and apparatus 失效
标题翻译：空值
公开(公告)号：EP0908781A3
公开(公告)日：1999-04-21
申请号：EP98124751.3
申请日：1991-09-25
申请人： CANON KABUSHIKI KAISHA
发明人： Komatsu, Toshiyuki , Sato, Yasue , Kawate, Shin-Ichi
IPC分类号： G03F7/004 , H01L21/308 , C23C16/04
CPC分类号： H01L21/02071 , C23C16/047 , G03F1/68 , G03F7/00 , G03F7/0035 , G03F7/0042 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/321 , H01L21/32139
摘要： The present invention provides a processing method comprising subjecting the surface of a substrate (803) to selective irradiation with light after the desired circuit pattern in an atmosphere of a modifying gas capable of modifying the surface, while maintaining the temperature (809,812) of said surface of the substrate to a given temperature range within which a pressure of said modifying gas reaches a saturated vapor pressure, to form on said surface of the substrate a surface-modified layer having a pattern structure; and etching the surface-unmodified layer using said surface-modified layer as a protective film. Furthermore, the present invention provides a processing apparatus comprising a light source, a latent image forming chamber (808), and an etching chamber (818); wherein said apparatus further comprises an evacuating means; said latent image forming chamber comprises a modifying gas feeding means (805b), a holder (802b), and an optical system (813,814,815,816); and said etching chamber comprises a holder (802c), and an etching gas feeding means (805d).
摘要翻译：一种处理方法包括：第一步骤，在作为样本的基板上沉积半导体，金属和绝缘体中的任一个的膜; 在第一步骤中沉积的膜的表面经受具有给定能量的光束照射以在表面上产生物理损伤的第二步骤; 在第二步骤中对产生物理损伤的膜表面进行第三步骤的选择性照射以部分地引起光化学反应，使得在膜表面上形成根据期望的器件结构的掩模图案; 以及第四步骤，使用在第三步骤中形成的掩模图案作为屏蔽部件进行光刻。

17. 发明公开

EP0797830A4 EXIT WINDOW FOR X-RAY LITHOGRAPHY BEAMLINE 失效
标题翻译：欧洲传感器FÜRRÖNTGENSTRAHLUNGSLITHOGRAPHIE
公开(公告)号：EP0797830A4
公开(公告)日：1997-11-19
申请号：EP95943093
申请日：1995-12-08
申请人： GRUMMAN AEROSPACE CORP
发明人： KOVACS STEPHEN
IPC分类号： G21K5/00 , G03F7/20 , G21K5/02 , H01J5/18 , H01L21/027 , H05H7/00 , G21K1/00
CPC分类号： G03F7/70808 , G03F7/70841 , H01J5/18 , H05H7/00
摘要： An exit window (14) for an X-ray lithography beamline having a shape and thickness such that the exit window (14) can withstand a pressure differential of at least 14.8 psi and allows an X-ray beam (16) as passed through the window to have X-rays above and below a desired energy band substantially attenuated. The exit window (14) includes a thin material (22) having a window section disposed within an opening of a frame (28) and a peripheral section (41) which is integral with the window section (24) extends within the frame (28). The window section (24) has a shape that is substantially concave along its width, substantially linear along its length and tapers to a flat surface (42) near the periphery of the opening. A method of scanning the X-ray beam through a stationary exit window and onto an exposure field on a wafer is also disclosed.
摘要翻译：用于具有形状和厚度的X射线光刻束线的出射窗，使得出射窗能够承受至少14.7psi的压差，并允许通过窗口的X射线束具有上方和下方的X射线所需的能带基本上衰减。出口窗口包括具有设置在框架的开口内的窗口部分的薄材料和与窗口部分整体并在框架内延伸的周边部分。窗口部分具有沿其宽度基本上为凹形的形状，沿其长度基本上线性并且在靠近开口周边的平坦表面逐渐变细。还公开了通过固定出射窗将X射线束扫描到晶片上的曝光场上的方法。

18. 发明公开

EP0797830A1 EXIT WINDOW FOR X-RAY LITHOGRAPHY BEAMLINE 失效
标题翻译：出射窗的X射线LITHOGRAPHIE
公开(公告)号：EP0797830A1
公开(公告)日：1997-10-01
申请号：EP95943093.0
申请日：1995-12-08
申请人： GRUMMAN AEROSPACE CORPORATION
发明人： KOVACS, Stephen
IPC分类号： G21K5 , G03F7 , H01J5 , H01L21 , H05H7
CPC分类号： G03F7/70808 , G03F7/70841 , H01J5/18 , H05H7/00
摘要： An exit window (14) for an X-ray lithography beamline having a shape and thickness such that the exit window (14) can withstand a pressure differential of at least 14.8 psi and allows an X-ray beam (16) as passed through the window to have X-rays above and below a desired energy band substantially attenuated. The exit window (14) includes a thin material (22) having a window section disposed within an opening of a frame (28) and a peripheral section (41) which is integral with the window section (24) extends within the frame (28). The window section (24) has a shape that is substantially concave along its width, substantially linear along its length and tapers to a flat surface (42) near the periphery of the opening. A method of scanning the X-ray beam through a stationary exit window and onto an exposure field on a wafer is also disclosed.

19. 发明授权

EP0353980B1 A mounting method 失效
标题翻译：安装过程。
公开(公告)号：EP0353980B1
公开(公告)日：1995-05-24
申请号：EP89307779.2
申请日：1989-07-31
申请人： CANON KABUSHIKI KAISHA
发明人： Iwamoto, Kazunori , Uzawa, Shunichi , Kariya, Takao , Ebinuma, Ryuichi , Chiba, Hiroshi , Ohkawa, Shinkichi
IPC分类号： G12B5/00
CPC分类号： G03F7/707 , G03F7/70841 , G03F7/70858 , G03F7/70866 , G03F7/70883 , G12B5/00

20. 发明授权

EP0373504B1 Synchrotron radiation irradiation equipment 失效
标题翻译：同步加速器辐射装置。
公开(公告)号：EP0373504B1
公开(公告)日：1994-04-06
申请号：EP89122557.5
申请日：1989-12-07
申请人： FUJITSU LIMITED
发明人： Yamashita, Yoshimi c/o FUJITSU LIMITED , Horiuchi, Kei c/o FUJITSU LIMITED
IPC分类号： G21K1/04 , G21K5/00 , H05H7/00
CPC分类号： G03F7/70058 , G03F7/70841 , G03F7/70858 , G21K1/043 , G21K5/00 , H05H7/00

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