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131. 发明授权

EP1783910B1 Schaltungsanordnung und ein Verfahren zur galvanisch getrennten Ansteuerung eines Halbleiterschalters 有权
标题翻译：电路装置和方法，用于在半导体开关的电气隔离触发
公开(公告)号：EP1783910B1
公开(公告)日：2012-10-31
申请号：EP05024239.5
申请日：2005-11-07
申请人： Bosch Rexroth AG
发明人： Dittrich, Thomas
IPC分类号： H03K17/691 , H03K17/567 , H03K17/687 , H02M1/08 , H03K17/06
CPC分类号： H02M1/08 , H03K17/063 , H03K17/161 , H03K17/567 , H03K17/691 , H03K2017/066

132. 发明公开

EP2503693A1 Composite Semiconductor Device with Active Oscillation Prevention 有权转让
标题翻译： Verbundstoffhalbleitervorrichtung mit aktivem Schwingungsschutz
公开(公告)号：EP2503693A1
公开(公告)日：2012-09-26
申请号：EP12159776.9
申请日：2012-03-15
申请人： International Rectifier Corporation
发明人： Bramian, Tony , Zhang, Jason
IPC分类号： H03K17/567 , H03K17/16 , H03K17/10
CPC分类号： H01L27/085 , H01L21/8236 , H01L21/8258 , H01L25/18 , H01L27/0883 , H01L29/16 , H01L29/2003 , H01L29/78 , H01L2924/0002 , H03K17/107 , H03K17/168 , H03K17/302 , H03K17/567 , H01L2924/00
摘要： There are disclosed herein various implementations of composite semiconductor devices with active oscillation control. In one exemplary implementation, a normally OFF composite semiconductor device (200) comprises a normally ON III-nitride power transistor (210) and a low voltage, LV, device (220) cascoded with the normally ON III-nitride power transistor to form the normally OFF composite semiconductor device. The LV device may be configured to include one or both of a reduced output resistance due to, for example, a modified body implant and a reduced transconductance due to, for example, a modified oxide thickness to cause a gain of the composite semiconductor device to be less than approximately 10,000.
摘要翻译：这里公开了具有主动振荡控制的复合半导体器件的各种实现方式。在一个示例性实施方案中，正常关闭复合半导体器件（200）包括正常的III族氮化物功率晶体管（210）和与正常的III族氮化物功率晶体管共模耦合的低电压LV器件（220），以形成常关复合半导体器件。 LV器件可以被配置为包括由于例如修改的体植入物引起的减小的输出电阻中的一个或两个，并且由于例如修改的氧化物厚度导致复合半导体器件的增益导致的降低的跨导小于约10,000。

133. 发明授权

EP1427107B1 Commutateur de type SCR commande en HF 有权
标题翻译：在SCR型的HF-受控开关
公开(公告)号：EP1427107B1
公开(公告)日：2011-09-14
申请号：EP03300242.9
申请日：2003-12-02
申请人： STMicroelectronics S.A.
发明人： Pezzani, Robert
IPC分类号： H03K17/722 , H01L29/74
CPC分类号： H03K17/722 , H01L29/7408 , H03K17/567

134. 发明公开

EP2256799A2 Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same 审中-公开
标题翻译：复合材料选自III-IV和IV组的材料和工艺及其制备由一种单片垂直集成半导体部件
公开(公告)号：EP2256799A2
公开(公告)日：2010-12-01
申请号：EP10004470.0
申请日：2010-04-28
申请人： International Rectifier Corporation
发明人： Briere, Michael, A.
IPC分类号： H01L21/8258 , H01L27/06
CPC分类号： H01L27/0629 , H01L21/8221 , H01L21/8258 , H01L23/481 , H01L23/535 , H01L27/0605 , H01L27/0694 , H01L29/16 , H01L29/2003 , H01L29/205 , H01L29/778 , H01L29/7786 , H01L29/78 , H01L29/861 , H01L29/872 , H01L2924/0002 , H03K17/567 , H01L2924/00
摘要： According to one disclosed embodiment, a monolithic vertically integrated composite device comprises a double sided semiconductor substrate having first and second sides, a group IV semiconductor layer formed over the first side and comprising at least one group IV semiconductor device, and a group III-V semiconductor body formed over the second side and comprising at least one group III-V semiconductor device electrically coupled to the at least one group IV semiconductor device. The composite device may further comprise a substrate via and/or a through-wafer via providing electric coupling. In one embodiment, the group IV semiconductor layer may comprise an epitaxial silicon layer, and the at least one group IV semiconductor device may be a combined FET and Schottky diode (FETKY) fabricated on the epitaxial silicon layer. In one embodiment, the at least one group III-V semiconductor device may be a III-nitride high electron mobility transistor (HEMT).
摘要翻译：。根据一个盘游离缺失实施方式中，单片垂直集成复合装置包括具有第一和第二侧的双面半导体衬底，形成在所述第一侧和包含至少一种IV族半导体器件的IV族半导体层，以及III-V族半导体本体形成在第二侧以及至少一个包含III-V族半导体装置电耦合到所述至少一个组IV半导体器件。该复合设备可以经由提供电耦合通路和/或贯穿晶片包括另一基材。在一个，实施例中的IV族半导体层可包括外延硅层，并且所述至少一种IV族半导体器件可以是在外延硅层上制造的组合FET及肖特基二极管（FETKY）。在一个，该实施例的至少一个III-V族半导体器件可以是III族氮化物高电子迁移率晶体管（HEMT）。

135. 发明公开

EP2171757A2 NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING 审中-公开
标题翻译：常闭JFET集成电路与BIG BAND距离和方法SEMICONDUCTORS
公开(公告)号：EP2171757A2
公开(公告)日：2010-04-07
申请号：EP08781291.3
申请日：2008-07-02
申请人： Semisouth Laboratories, Inc.
发明人： SANKIN, Igor , MERRETT, Joseph, Neil
IPC分类号： H01L27/098 , H01L29/808 , H01L29/812 , H01L21/04 , H01L21/8232
CPC分类号： H01L29/808 , H01L27/098 , H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/8083 , H01L29/8122 , H01L29/8124 , H01L29/861 , H01L29/868 , H01L29/872 , H03K17/08142 , H03K17/08148 , H03K17/567 , H03K17/6871 , H03K2017/6875
摘要： Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature -tolerant and radiation-resistant electronics components. Methods of making the devices are also described.

136. 发明公开

EP2164155A1 ELECTRONIC ELEMENT DRIVING CIRCUIT 有权
标题翻译： ANSTEUERSCHALTUNGFÜRELEKTRONISCHE ELEMENTE
公开(公告)号：EP2164155A1
公开(公告)日：2010-03-17
申请号：EP07768044.5
申请日：2007-07-03
申请人： Mitsubishi Electric Corporation
发明人： MIYAZAKI, Yuji
IPC分类号： H02M1/08
CPC分类号： H02M1/08 , H03K17/06 , H03K17/567 , H03K2017/066 , H03K2217/0045 , H03K2217/0081
摘要： A drive circuit (1) for an IGBT (10) includes an H-bridge circuit (80) using first to fourth switch elements (Q1 - Q4). When a control unit (20) receives a command for changing the IGBT (10) from an on state to an off state, it switches states of the first to fourth switch elements from a first state in which the first and fourth switch elements (Q1 and Q4) are in an on state and the second and third switch elements (Q2 and Q3) are in an off state to a second state in which the first and fourth switch elements (Q1 and Q4) are in the off state and the second and third switch elements (Q2 and Q3) are in the on state. This structure of the drive circuit (1) can apply a reverse bias to the IGBT (1) from a single power supply (15).
摘要翻译：用于IGBT（10）的驱动电路（1）包括使用第一至第四开关元件（Q1-Q4）的H桥电路（80）。当控制单元（20）接收到将IGBT（10）从接通状态改变为断开状态的命令时，将第一至第四开关元件的状态从第一和第四开关元件（Q1 和Q4）处于导通状态，并且第二和第三开关元件（Q2和Q3）处于断开状态到第一和第四开关元件（Q1和Q4）处于断开状态的第二状态，第二开关元件和第三开关元件（Q2和Q3）处于导通状态。驱动电路（1）的这种结构可以从单个电源（15）向IGBT（1）施加反向偏置。

137. 发明公开

EP2005435A4 LUS SEMICONDUCTOR AND APPLICATION CIRCUIT 审中-公开
标题翻译： LUS半导体和应用电路
公开(公告)号：EP2005435A4
公开(公告)日：2010-01-13
申请号：EP06825223
申请日：2006-09-29
申请人： LU CHAO CHENG
发明人： LU CHAO-CHENG
IPC分类号： H02M3/335 , G11C8/00 , H01L29/78 , H03K5/08
CPC分类号： H03K17/567 , H02M3/33592 , H03K17/687 , Y02B70/1475

138. 发明公开

EP2122818A2 METHOD TO DRIVE A HIGH-VOLTAGE TUBE GRID 审中-公开
标题翻译：一种用于驱动高压电网PIPE
公开(公告)号：EP2122818A2
公开(公告)日：2009-11-25
申请号：EP08709989.1
申请日：2008-02-11
申请人： Philips Intellectual Property & Standards GmbH , Koninklijke Philips Electronics N.V.
发明人： BLEUKX, Marc Maria Alex , LOEF, Christoph , PIETIG, Rainer
IPC分类号： H02M7/5387 , H03K17/72 , H05G1/12
CPC分类号： H02M7/5387 , H03K17/0416 , H03K17/0814 , H03K17/567 , H03K17/687 , H03K17/74 , H03K2217/0036 , Y10T307/76
摘要： A method and device for operating a device for high-voltage switching for driving capacitive loads, having a first and a second input terminal (11, 12) for applying a high voltage supply, such that a higher potential of the high-voltage supply may be applied to the first input terminal (11) and a lower potential may be applied to the second input terminal (12); a first and a second switch (S1, S2), connected in series between the first and the second input terminal (11, 12); a first and a second clamping diode (D3, D4), connected in series and in the same blocking direction between the first input terminal and the second input terminal, such that the first second clamping diode block with respect to the applied high voltage; a storage inductor Ls, which is connected withone of its terminals to a connecting point (13) of the both switches and with another terminal to a connecting point (14) of the both clamping diodes; and an output terminal (15) for connecting a capacitive load Cl, which output terminal is connected with the connecting point (14) of the both clamping diodes (D3, D4). The method comprises starting with both switches (S1, S2) open; closing of the first switch (S1) after a first predetermined time; opening (ST3) of the first switch (S1) after a second predetermined time; closing (ST4) of the second switch (S2), after arriving a zero voltage over the second switch.

139. 发明公开

EP2117121A1 Semiconductor power switch 审中-公开
标题翻译： Halbleiternetzschalter
公开(公告)号：EP2117121A1
公开(公告)日：2009-11-11
申请号：EP08103832.5
申请日：2008-05-06
申请人： Schleifring und Apparatebau GmbH
发明人： Klemt, Michael , Krumme, Nils
IPC分类号： H03K17/567 , H03K17/04 , H03K17/12
CPC分类号： H03K17/0406 , H02M1/088 , H02M3/337 , H03K17/127 , H03K17/567
摘要： A Semiconductor power switch comprises one first lGBT (1) and at least one second lGBT (2). The collectors of both IGBTs and also the emitters of both IGBTs are connected to each other. The first IGBT (1) is an IGBT type with comparatively low collector-emitter on voltage and comparatively high turn on or turn off switching energy. In contrast thereto the second IGBT (2) is an IGBT type with comparatively high collector-emitter on voltage and comparatively low turn on or turn off switching energy. Both IGBTs receive gate signals from a control circuit (10) for switching the power switch on during a first time interval and off during a second time interval. The control circuit (10) is designed to deliver an on signal to the second IGBT (2) during the whole first time interval and an on signal to the first IGBT (1) during only parts of the first time interval.
摘要翻译：半导体电源开关包括一个第一个lGBT（1）和至少一个第二个lGBT（2）。两个IGBT的集电极以及两个IGBT的发射极彼此连接。第一个IGBT（1）是一种具有较低的集电极 - 发射极电压和相对较高的导通或关断开关能量的IGBT型。与此相反，第二IGBT（2）是具有比较高的集电极 - 发射极电压相对较高并且相对较低的导通或关断开关能量的IGBT型。两个IGBT从控制电路（10）接收门信号，用于在第一时间间隔期间接通电源开关并在第二时间间隔期间关断。控制电路（10）被设计成在整个第一时间间隔期间向第二IGBT（2）传送导通信号，并且在第一时间间隔的仅部分期间将导通信号传送到第一IGBT（1）。

140. 发明公开

EP2115870A1 A SWITCH CONTROL CIRCUIT 有权
标题翻译：开关控制电路
公开(公告)号：EP2115870A1
公开(公告)日：2009-11-11
申请号：EP08712816.1
申请日：2008-02-15
申请人： NFO Drives AB
发明人： SVENSSON, Kenneth
IPC分类号： H03K17/56
CPC分类号： H03K17/13 , H02M3/3376 , H02M2003/1586 , H03K5/1536 , H03K17/0814 , H03K17/082 , H03K17/165 , H03K17/26 , H03K17/28 , H03K17/567 , H03K17/687
摘要： A switch control circuit for controlling a bridge circuit comprising: an upper and a lower transistor (2, 3), connected to a positive and a negative voltage (+V1, -V1), respectively, and comprising a flywheel diode connected in parallel with each transistor. An LC-circuit (4, 5, 6) filters the voltage (E) from the junction of the transistors. A drive circuit (8, 9) controls each transistor in order to switch off the corresponding switch element when a reference current has been obtained in the inductor and for switching on the corresponding switch element when the current in the inductor is essentially zero. A first timer circuit (21, 22) is arranged for preventing the on-switch of the switch element until a minimum time period has passed.

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