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1. 发明公开

EP4401314A2 CONTACTOR DRIVES 审中-实审
公开(公告)号：EP4401314A2
公开(公告)日：2024-07-17
申请号：EP24151457.9
申请日：2024-01-11
申请人： Hamilton Sundstrand Corporation
发明人： JOYCE, Thomas P.
IPC分类号： H03K17/22 , H03K17/567 , H03K17/64 , H03K17/691 , H01H47/00 , H01H47/04 , H01H47/10 , H01H47/32 , H03K17/785
CPC分类号： H03K17/22 , H03K2017/687520130101 , H03K17/567 , H03K2217/007220130101 , H03K17/64 , H03K17/785 , H01H47/04 , H01H47/10 , H01H47/32 , H01H47/001
摘要： A low-side contactor coil drive circuit can include an input line (101) and a first solid state switch (103) having a first switch base (103b), a first switch collector (103c), and a first switch emitter (103e). The first switch collector (103c) can be connected to the input line (101) and the first switch emitter (103e) is connected to ground. The circuit can include a second solid state switch (105) having a second switch base (105b), a second switch collector (105c), and a second switch emitter (105e). The second switch emitter (105e) can be connected to the input line (101) in parallel with the first switch collector (103c). The second switch collector (105c) can be connected to the first switch base (103b). The circuit can include a third solid state switch (107) having a third switch gate (107g), a third switch source (107s), and a third switch drain (107d). The third switch drain (107d) can be connected to the second switch base (105b).

2. 发明公开

EP3409547A1 ELECTRONIC BRAKING ARRANGEMENTS 有权
公开(公告)号：EP3409547A1
公开(公告)日：2018-12-05
申请号：EP18175045.6
申请日：2018-05-30
申请人： Simmonds Precision Products, Inc.
发明人： DURKEE, Scott R.
IPC分类号： B60T8/17 , B60T13/74 , H02P27/06
CPC分类号： B64C25/44 , B60T8/1703 , B60T13/741 , F16D55/36 , F16D2121/18 , H02P27/06 , H03K17/567
摘要： An electronic braking arrangement includes a brake stack assembly, a driver circuit, a current limiter circuit, and a voltage limiter circuit. The driver circuit is operably connected to the brake stack assembly. The current limiter circuit and the voltage limiter circuit are connected in series between the driver circuit and the brake stack assembly to drive friction brake loads in the brake stack assembly with a voltage limited constant drive current.

3. 发明授权

EP2991227B1 DRIVING DEVICE AND SWITCHING CIRCUIT CONTROL METHOD 有权转让
公开(公告)号：EP2991227B1
公开(公告)日：2018-10-03
申请号：EP14788613.9
申请日：2014-03-03
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： TOSHIYUKI, Ken , TSUTSUI, Tokuro
IPC分类号： H03K17/16 , H02M1/08 , H03K17/687 , H02M7/538 , H03K5/24 , H03K17/567 , H03K19/0175 , H03K17/30 , H02M1/00
CPC分类号： H03K17/567 , H02M1/08 , H02M7/538 , H02M2001/0048 , H03K5/24 , H03K19/017509 , H03K2017/307 , Y02B70/1491
摘要： A driving device includes a switching circuit configured to have switching elements disposed on a high side and a low side, the switching element including a first electrode, a second electrode, and a reverse conducting element disposed between the first electrode and the second electrode; and a determination part configured to determine whether to permit the switching element to turn on, based on a result obtained by detecting a voltage between the first electrode and the second electrode, in a period during which the switching elements on both sides are off.

4. 发明公开

EP3376724A1 COMMUNICATING ACROSS GALVANIC ISOLATION, FOR EXAMPLE, IN A POWER CONVERTER 有权
公开(公告)号：EP3376724A1
公开(公告)日：2018-09-19
申请号：EP18171043.5
申请日：2015-07-08
申请人： Power Integrations Switzerland GmbH
发明人： Peter, Matthias , Thalheim, Jan
IPC分类号： H04L25/02 , H03K17/691
CPC分类号： H03K17/691 , H02M3/07 , H03H7/06 , H03K5/05 , H03K17/567 , H04L25/0266
摘要： A signal transmission system for communicating across galvanic isolation. The signal transmission system includes first circuitry referenced to a first potential, the first circuitry comprising signal transmission circuitry, second circuitry referenced to a second potential and galvanically isolated from the first circuitry, the second circuitry comprising signal reception circuitry, and a magnetic coupling between the first circuitry to the second circuitry across the galvanic isolation, the magnetic coupling comprising a transmitter-side inductor and a receiver-side inductor. The signal transmission circuitry can include a source coupled to output, to the transmitter-side inductor of the magnetic coupling, a first state representation that represents a first logic state with multiple transitions, the first state representation including at least a first upward transition, a first downward transition, a second upward transition, and a second downward transition.

5. 发明公开

EP3375093A1 LOW-LOSS AND FAST ACTING SOLID-STATE BREAKER 无效转让
公开(公告)号：EP3375093A1
公开(公告)日：2018-09-19
申请号：EP16864898.8
申请日：2016-11-09
申请人： Silicon Power Corporation
发明人： WALDRON, John E. , BRANDMIER, Kenneth , AZOTEA, James K.
IPC分类号： H03K17/0812 , H02H3/12 , H02H3/20 , H02H3/24 , H02H7/122 , H02H9/02
CPC分类号： H02H3/033 , H02H3/027 , H02H3/08 , H02H3/20 , H02H3/44 , H03K17/0416 , H03K17/567
摘要： A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be ON to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn ON. After the at least one IGBT turns ON, the at least one GTO is configured to turn OFF. After a predetermined amount of time, reflecting the post fabrication alteration to the GTO's minority carrier lifetime (e.g. electron irradiation), after the at least one GTO turns OFF, the at least one IGBT is configured to turn OFF. Alternatively, the circuit is used as an inverter switch, where at the command to turn ON is supplied, the at least one IGBT is turned ON, followed by the at least one SGTO. When commanded to turn OFF the at least one SGTO is turned OFF followed by the at least one IGBT. This alternative configuration allows the robust, controllable switching speeds of IGBTs and the superior conduction efficiency of SGTOs. The two configurations mentioned above utilize a wide range of SGTO performance, thus the ability to control the SGTOs turn-off speed by reducing its minority carrier lifetime after the device is processed is of large importance. The efficiency of all uses of the circuit can be optimized with the judicious selection of SGTO minority carrier lifetime and the ratio of active area between the SGTO and IGBT devices. In all cases there is a balance between the time the circuit can achieve hard turn-off without current commutation, the conduction efficiency of the circuit and the maximum amount of controllable current. In all cases both the conduction efficiency of the circuit is higher than an IGBT-only based circuit, and the switching performance is higher than a GTO-only based circuit.

6. 发明授权

EP3082208B1 DC BREAKER DEVICE 有权
公开(公告)号：EP3082208B1
公开(公告)日：2018-09-05
申请号：EP14869389.8
申请日：2014-04-11
申请人： Mitsubishi Electric Corporation
发明人： HORINOUCHI, Katsuhiko , SATO, Motohiro
IPC分类号： H02H3/087 , H01H9/54 , H01H33/59 , H03K17/0812
CPC分类号： H02H3/38 , H01H9/54 , H01H9/547 , H01H33/596 , H01H2009/544 , H02H3/087 , H03K17/08128 , H03K17/567
摘要： In a DC circuit breaker device (100), first and second semiconductor switches (2L, 2R) are connected in series on a main circuit line such that current-carrying directions of the switches are opposite to each other. A first diode (3L) is connected in anti-parallel with the first semiconductor switch (2L), and a second diode (3R) is connected in anti-parallel with the second semiconductor switch (2R). First and second mechanical circuit breakers (4L, 4R) are connected in series with each other and in parallel with the whole of the first and semiconductor switches (2L, 2R). First and second backward current generation circuits (7L, 7R) are connected in series with each other and in parallel with the whole of the first and second mechanical circuit breakers (4L, 4R). An injection switch (8) is connected between a node (N3) between the first and second mechanical circuit breakers (4L, 4R) and a node (N4) between the first and second backward current generation circuits (7L, 7R).

7. 发明授权

EP2787641B1 Cascoded semiconductor devices 有权转让
公开(公告)号：EP2787641B1
公开(公告)日：2018-08-29
申请号：EP13162597.2
申请日：2013-04-05
申请人： Nexperia B.V.
发明人： Büthker, Henricus Cornelis Johannes , Rose, Matthias
IPC分类号： H03K17/567 , H03K17/0812
CPC分类号： G05F3/247 , H01L23/50 , H01L2924/0002 , H03K17/08128 , H03K17/567 , H03K2017/307 , H03K2017/6875 , H01L2924/00
摘要： The invention provides a cascode transistor circuit with a depletion mode transistor and a switching device. A gate bias circuit is connected between the gate of the depletion mode transistor and the low power line. The gate bias circuit is adapted to compensate the forward voltage of a diode function of the switching device. The depletion mode transistor and the gate bias circuit are formed as part of an integrated circuit.

8. 发明授权

EP2537253B1 METHOD FOR IMPLEMENTING BOOTSTRAP-SUPPLY CHARGING IN A MOTOR CONTROLLER AT ENERGIZED MOTOR AND MOTOR CONTROLLER USING SUCH A METHOD 有权
标题翻译：用这种方法在电动机和电动机控制器上实现电动机控制器的自举电源充电的方法
公开(公告)号：EP2537253B1
公开(公告)日：2018-05-09
申请号：EP11705804.0
申请日：2011-02-18
申请人： Danfoss Drives A/S
发明人： ANDERSEN, Henrik, Rosendal
IPC分类号： H02P6/20 , H02P27/08 , H02P1/02 , H02P6/18 , H03K17/567
CPC分类号： H03K17/567 , H02P1/029 , H02P6/18 , H02P6/20 , H02P27/08 , H03K2217/0081
摘要： The present invention relates to a motor controller employing bootstrap-capacitor supplies and in particular to the situation where the bootstrap supplies have to be charged, while the motor controller is connected to a spinning and energized motor. The present invention introduces a method of recharging based on choosing a recharging sequence from a set of recharging sequences, where the choice depends on the state of the connected motor and in particular on the back-EMF voltages of the motor.

9. 发明公开

EP3242399A1 MONOLITHISCH INTEGRIERTER HALBLEITERSCHALTER, INSBESONDERE LEISTUNGSTRENNSCHALTER 有权
标题翻译：单片集成的半导体开关，特别是断路器
公开(公告)号：EP3242399A1
公开(公告)日：2017-11-08
申请号：EP17169374.0
申请日：2017-05-04
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： Hürner, Andreas , Erlbacher, Tobias
IPC分类号： H03K17/082 , H03K17/687 , H01L27/02 , H02H9/02 , H02H3/08 , H02H9/04
CPC分类号： H01L27/0705 , H01L27/0266 , H01L29/1608 , H01L29/7392 , H01L29/8083 , H02H3/08 , H03K17/0828 , H03K17/567 , H03K17/6872 , H03K2217/0018
摘要： Die vorliegende Erfindung betrifft einen monolithisch integrierten Halbleiterschalter, insbesondere einen Leistungstrennschalter, mit regenerativem Abschaltverhalten. Der Halbleiterschalter weist zwei Feldeffekttransistoren, beispielsweise einen p-JFET und einen n-JFET, in monolithischer Integration auf. Die Source-Elektroden (S) der beiden JFETs sowie das Wannengebiet des n-JFET sind kurzgeschlossen. Weiterhin sind die Gate-Elektroden (G) der beiden JFETs sowie die Drain-Elektrode (D) des p-JFET über die Kathode (K) kurzgeschlossen. Das Wannengebiet des p-JFET ist hingegen mit der Anode (A) kurzgeschlossen. Damit wird ein monolithisch integrierter Halbleiterschalter (1) realisiert, der bei Überschreiten einer bestimmten Anoden-Spannung oder eines bestimmten Anoden-Stroms automatisch abschaltet. Die Grenzwerte für die Anoden-Spannung und den Anoden-Strom lassen sich durch die Dimensionierung der Bauelemente festlegen. Es lassen sich dadurch Sperrfestigkeiten von bis zu 200kV bei schnellem Ansprechverhalten realisieren.
摘要翻译：本发明涉及具有再生关断行为的单片集成半导体开关，特别是电力电路断路器。半导体开关具有两个单片集成的场效应晶体管，例如p-JFET和n-JFET。两个JFET的源电极（S）和n-JFET的阱区被短路。此外，两个JFET的栅极电极（G）和p-JFET的漏极电极（D）通过阴极（K）短路。然而，p-JFET的阱区与阳极（A）短路。因此，实现了单片集成的半导体开关（1），其在超过某个阳极电压或某个阳极电流时自动切断。阳极电压和阳极电流的限制可以通过部件的尺寸确定。可以通过快速响应阻断高达200kV的强度来实现。

10. 发明公开

EP3082208A4 DC BREAKER DEVICE 有权
标题翻译： DC-SCHUTZSCHALTER
公开(公告)号：EP3082208A4
公开(公告)日：2017-08-16
申请号：EP14869389
申请日：2014-04-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： HORINOUCHI KATSUHIKO , SATO MOTOHIRO
IPC分类号： H02H3/087 , H01H9/54 , H01H33/59 , H03K17/0812
CPC分类号： H02H3/38 , H01H9/54 , H01H9/547 , H01H33/596 , H01H2009/544 , H02H3/087 , H03K17/08128 , H03K17/567
摘要： In a DC circuit breaker device (100), first and second semiconductor switches (2L, 2R) are connected in series on a main circuit line such that current-carrying directions of the switches are opposite to each other. A first diode (3L) is connected in anti-parallel with the first semiconductor switch (2L), and a second diode (3R) is connected in anti-parallel with the second semiconductor switch (2R). First and second mechanical circuit breakers (4L, 4R) are connected in series with each other and in parallel with the whole of the first and semiconductor switches (2L, 2R). First and second backward current generation circuits (7L, 7R) are connected in series with each other and in parallel with the whole of the first and second mechanical circuit breakers (4L, 4R). An injection switch (8) is connected between a node (N3) between the first and second mechanical circuit breakers (4L, 4R) and a node (N4) between the first and second backward current generation circuits (7L, 7R).
摘要翻译：在直流断路器装置（100）中，第一和第二半导体开关（2L，2R）在主电路线上串联连接，使得开关的电流方向彼此相反。第一二极管（3L）与第一半导体开关（2L）反并联连接，第二二极管（3R）与第二半导体开关（2R）反并联连接。第一和第二机械断路器（4L，4R）彼此串联连接并与整个第一和半导体开关（2L，2R）并联。第一和第二反向电流产生电路（7L，7R）彼此串联连接并且与整个第一和第二机械断路器（4L，4R）并联。在第一和第二机械断路器（4L，4R）之间的节点（N3）与第一和第二反向电流产生电路（7L，7R）之间的节点（N4）之间连接注入开关（8）。

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