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1. 发明授权

EP3928403B1 TURN OFF CIRCUIT FOR PROTECTION SWITCH 有权
公开(公告)号：EP3928403B1
公开(公告)日：2024-05-22
申请号：EP20759188.4
申请日：2020-02-24
IPC分类号： H02H3/20 , H03K17/0412 , H03K17/082 , H03K17/567
CPC分类号： H02H1/0007 , H02H3/20 , H03K17/0822 , H03K17/04123 , H03K2017/06620130101 , H03K2217/006320130101 , H03K2217/008120130101 , H03K17/567

2. 发明授权

EP2209211B1 Commutateur statique haute tension 有权
公开(公告)号：EP2209211B1
公开(公告)日：2018-10-24
申请号：EP09354052.4
申请日：2009-12-04
申请人： Crouzet Automatismes
发明人： Girot, Dominique , Carton, Hervé
IPC分类号： H03K17/082 , H03K17/567
CPC分类号： H03K17/0828 , H03K17/567

3. 发明公开

EP3379725A1 VERFAHREN ZUM STEUERN EINES GLEICHSTROMSCHALTERS, GLEICHSTROMSCHALTER UND GLEICHSPANNUNGSSYSTEM 审中-公开
公开(公告)号：EP3379725A1
公开(公告)日：2018-09-26
申请号：EP17162606.2
申请日：2017-03-23
申请人： Siemens Aktiengesellschaft
发明人： Kaluza, Peter , Schierling, Hubert , Weis, Benno
IPC分类号： H03K17/687 , H02M1/32 , H03K17/082
CPC分类号： H03K17/6874 , H03K17/082 , H03K17/0822 , H03K17/567 , H03K17/602 , H03K17/68 , H03K2217/0009
摘要： Die Erfindung betrifft ein Verfahren zur Steuerung eines Gleichstromschalters (1), wobei der Gleichstromschalter (1) einen ersten abschaltbaren Halbleiterschalter (2a) und einen zweiten abschaltbaren Halbleiterschalter (2b) aufweist, wobei der erste und der zweite abschaltbare Halbleiterschalter (2a, 2b) derart zwischen einem ersten Anschluss (21) und einem zweiten Anschluss (22) angeordnet sind, dass ein Strom (i) mit einer ersten Polarität durch den ersten abschaltbaren Halbleiterschalter (2a) führbar ist und der Strom (i) mit einer gegenüber der ersten Polarität entgegengesetzten Polarität durch den zweiten abschaltbaren Halbleiterschalter (2b) führbar ist, wobei in Abhängigkeit eines Strommesswertes einer der abschaltbaren Halbleiterschalter (2a, 2b) abgeschaltet wird. Weiter betrifft die Erfindung einen Gleichstromschalter (1) mit einem ersten und einen zweiten abschaltbaren Halbleiterschalter (2a, 2b) und einer lokalen Steuervorrichtung (3) zur Durchführung eines solchen Verfahrens. Darüber hinaus betrifft die Erfindung ein Gleichspannungssystem (50) mit mindestens einer Energiequelle (5) mit einer Gleichspannung sowie mindestens einen elektrischen Verbraucher (6) mit einem Gleichspannungsanschluss und mindestens einen solchen Gleichstromschalter (1).

4. 发明公开

EP3205021A4 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY 有权
公开(公告)号：EP3205021A4
公开(公告)日：2018-06-13
申请号：EP15848411
申请日：2015-10-09
申请人： EFFICIENT POWER CONVERSION CORP
发明人： DE ROOIJ MICHAEL A , STRYDOM JOHAN T , REUSCH DAVID C
IPC分类号： H03K17/687
CPC分类号： H03K17/567 , H03K17/04206 , H03K17/165 , H03K17/6871 , H03K19/017509 , H03K2217/0063 , H03K2217/0072 , H03K2217/0081
摘要： An electrical circuit arranged in a half bridge topology. The electrical circuit includes a high side transistor; a low side transistor; a gate driver and level shifter electrically coupled to a gate of the high side transistor; a gate driver electrically coupled to a gate of the low side transistor; a capacitor electrically coupled in parallel with the gate driver and level shifter; a voltage source electrically coupled to an input of the gate driver and level shifter and an input of the gate driver; and, a bootstrap transistor electrically coupled between the voltage source and the capacitor. A GaN field-effect transistor is synchronously switched with a low side device of the half bridge circuit.

5. 发明授权

EP2811518B1 Semiconductor device 有权
公开(公告)号：EP2811518B1
公开(公告)日：2018-03-28
申请号：EP14155485.7
申请日：2014-02-17
申请人： Kabushiki Kaisha Toshiba
发明人： Ikeda, Kentaro
IPC分类号： H01L25/18 , H03K17/567 , H01L27/02 , H01L27/085 , H01L27/06
CPC分类号： H01L27/0255 , H01L25/18 , H01L27/0266 , H01L27/0629 , H01L27/085 , H01L2224/0603 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2224/49171 , H01L2924/12032 , H01L2924/13091 , H03K17/567 , H01L2924/00
摘要： A semiconductor device of an embodiment is provided with a normally-off transistor having a first source connected to a source terminal, a first drain, and a first gate connected to a gate terminal and a normally-on transistor having a second source connected to the first drain, a second drain connected to a drain terminal, and a second gate connected to the source terminal. A withstand voltage between the first source and the first drain when the normally-off transistor is turned off is lower than a withstand voltage between the second source and the second gate of the normally-on transistor.

6. 发明公开

EP3226294A4 HALF-BRIDGE POWER SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SAME 有权转让
公开(公告)号：EP3226294A4
公开(公告)日：2018-02-21
申请号：EP14907167
申请日：2014-11-28
申请人： NISSAN MOTOR
发明人： TANIMOTO SATOSHI
IPC分类号： H01L25/07 , H01L23/48 , H01L23/49 , H01L23/498 , H01L25/18
CPC分类号： H01L25/0655 , H01L23/48 , H01L23/49811 , H01L23/49838 , H01L23/49844 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L2224/0603 , H01L2224/45014 , H01L2224/4809 , H01L2224/48091 , H01L2224/48139 , H01L2224/48472 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/49431 , H01L2924/00014 , H01L2924/0002 , H01L2924/19105 , H02M3/155 , H02M7/003 , H02M7/04 , H02M7/48 , H03K17/567 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A half-bridge power semiconductor module 1 includes an insulating wiring board 15 including a positive-electrode wiring conductor 12H, a bridge wiring conductor 12B, and a negative-electrode wiring conductor 21L arranged on or above a single insulating plate 16 in such a way as to be electrically insulated from each other. The back-surface electrodes of a high-side power semiconductor device 13HT and a low-side power semiconductor device 13LT are joined to the front sides of the positive-electrode wiring conductor 12H and the bridge wiring conductor 12B. Front-surface electrodes of the high-side power semiconductor device 13HT and the low-side power semiconductor device 13LT are connected to the bridge wiring conductor 12B and the negative-electrode wiring conductor 21L by a plurality of bonding wires 18BT and a plurality of bonding wires 18LT.

7. 发明公开

EP3214761A2 ELECTRONIC VIBRATOR 审中-公开
标题翻译：电子振动器
公开(公告)号：EP3214761A2
公开(公告)日：2017-09-06
申请号：EP15854181.3
申请日：2015-10-13
申请人： Fascoeng Co., Ltd.
发明人： AHN, Dong Jun
IPC分类号： H03K17/08 , H03K3/353
CPC分类号： B06B1/045 , B02C19/16 , B06B1/0215 , H02K33/16 , H03K17/08 , H03K17/567
摘要： The present invention relates to an electronic vibrator comprising: a power supply unit for converting AC power into DC power; a bridge circuit unit comprising an IGBT, as a power switching element, in order to enable driving of a large-capacity oscillator; a circuit driving unit for driving the bridge circuit unit, the circuit driving unit applying a sine wave, which is a sine wave PWM modulation reference wave, together with a triangular wave; and a vibration generator connected to the bridge circuit unit so as to generate vibration by means of an electric current provided by the bridge circuit unit, wherein the vibration generator comprises: an E core, which has an E-shape, which is made of a steel plate, and which comprises multiple overlapping layers; an I core, which is positioned at a distance from the E core, which is made of a steel plate, which comprises multiple overlapping layers, and which has an I-shape; a winding unit wound around a portion horizontally protruding from the center of the E core, an AC current being applied to the winding unit; a housing for containing the E core, the I core, and the winding unit; a wing plate protruding from a side wall of the housing and comprising a wing through-hole, which is a bored hole; a bottom plate member, which is positioned at a distance from the housing, and which has a containing groove, thereby containing the I core; a bolt which penetrates the wing through-hole and is coupled to the bottom plate member; and a urethane spring, which is coupled to the housing, which adjusts impacts and buffering, and which is made of urethane. The electronic vibrator has the following advantageous effects: the same pulverizes/scatters powder, which is transferred inside a chute, a hopper, or a transfer piping facility, thereby preventing a sloping discharge opening from being narrowed or clogged by adsorption or flocking of the powder inside the discharge opening; liquidity of a manufacturing facility is improved/maintained such that powder can be efficiently transferred/supplied from the facility to transfer lines; a sloping discharge opening of the facility is prevented from being narrowed or clogged by adsorption or flocking of the powder inside the discharge opening; the electronic vibrator can be applied to an existing facility comparatively easily and installed/used; it is possible to prevent an excessive flow of electric current due to an increased time of application of current to a power element in an ultra-low frequency operation range; prevention of an excessive flow of electric current leads to prevention of a fracture of the power element; and a stable operation can be guaranteed, even in the ultra-low frequency operation interval, without increasing the current.
摘要翻译：电子振动器技术领域本发明涉及一种电子振动器，其包括：用于将AC电力转换成DC电力的电源单元; 包括作为功率开关元件的IGBT的桥式电路单元，以便能够驱动大容量振荡器; 电路驱动单元，用于驱动电桥电路单元，电路驱动单元将正弦波PWM调制参考波的正弦波与三角波一起施加; 以及振动发生器，其连接到所述桥式电路单元以便通过由所述桥式电路单元提供的电流来产生振动，其中，所述振动发生器包括：具有E形状的E型芯，所述E型芯由钢板，并且包括多个重叠层; 与E芯相距一定距离定位的I芯，所述E芯由钢板制成，所述钢板由多个重叠层构成，并且具有I形; 缠绕单元，其缠绕在从E芯的中心水平突出的部分上，AC电流被施加到缠绕单元; 用于容纳E芯，I芯和缠绕单元的壳体; 翼板，从所述壳体的侧壁突出并且包括作为钻孔的翼部通孔; 底板部件，其位于与所述壳体相距一定距离处并且具有容纳槽，从而容纳所述I型芯; 贯穿所述机翼通孔并与所述底板部件结合的螺栓; 以及连接到壳体的聚氨酯弹簧，其调节冲击和缓冲，并由聚氨酯制成。电子振动器具有以下有益效果：在滑槽，料斗或输送管道设施内输送相同的粉末/散落粉末，从而防止倾斜的排放口因粉末的吸附或植绒而变窄或堵塞在排放口内; 生产设备的流动性得到改善/保持，使粉末可以有效地从设施转移/供应到输送管线; 通过在排放口内吸附或植绒粉末防止设施的倾斜排放口变窄或堵塞; 电子振动器可以比较容易地应用于现有的设备并安装/使用; 可以防止由于向超低频工作范围内的功率元件施加电流的时间增加而引起电流的过大流动; 防止电流过大导致防止功率元件断裂; 并且即使在超低频操作区间中也可以保证稳定的操作，而不增加电流。

8. 发明公开

EP3214750A1 INTERPHASE REACTOR AND PARALLEL CONVERTERS USING SUCH A REACTOR 审中-公开
标题翻译：相间电抗器和使用这种电抗器的并联变流器
公开(公告)号：EP3214750A1
公开(公告)日：2017-09-06
申请号：EP17158759.5
申请日：2017-03-01
申请人： Hamilton Sundstrand Corporation
发明人： FENG, Frank Z. , WHITE, Adam Michael
IPC分类号： H02M7/493 , H02M1/12 , H02M1/00 , H02M3/158
CPC分类号： H01F27/34 , H01F27/24 , H01F27/2895 , H02M1/126 , H02M3/1584 , H02M7/493 , H02M2001/0064 , H03K17/567
摘要： A parallel semiconductor switching system includes an input filter circuit, a plurality of switching circuits (106a-b), and a current-sharing filter inductor. The switching circuits (106a-b) receive the filtered voltage generated by the input filter circuit, and each switching circuit outputs a respective current. The current-sharing filter inductor includes a plurality of windings (110a-n). Each winding has a winding input and a winding output. The winding input of each winding is connected to a switching output of a respective switching circuit, and the winding output of each winding is connected to one another to form a common node (112). The common node (112) is connected directly to a load such that the cument-sharing filter inductor shares each current output from the plurality of switching circuits so as to deliver a combined current to the load.
摘要翻译：并联半导体开关系统包括输入滤波器电路，多个开关电路（106a-b）和电流共享滤波器电感器。开关电路（106a-b）接收由输入滤波器电路生成的滤波电压，并且每个开关电路输出相应的电流。该电流共享滤波电感器包括多个绕组（110a-n）。每个绕组都有一个绕组输入和一个绕组输出。每个绕组的绕组输入连接到相应开关电路的开关输出，并且每个绕组的绕组输出相互连接以形成公共节点（112）。公共节点（112）直接连接到负载，使得共享滤波电感器共享从多个开关电路输出的每个电流，以便将组合电流输送到负载。

9. 发明公开

EP3053240A4 FOUR SEGMENT AC MOSFET SWITCH 审中-公开
标题翻译： VIERSEGMENTIG-AC-MOSFET，SCHALTER
公开(公告)号：EP3053240A4
公开(公告)日：2017-07-19
申请号：EP13894466
申请日：2013-09-30
申请人： SCHNEIDER ELECTRIC IT CORP
发明人： LACARNOY ALAIN
IPC分类号： H02J3/00 , H02M7/44 , H02M7/487 , H02M7/537 , H03K17/041 , H03K17/0416 , H03K17/10 , H03K17/12 , H03K17/567 , H03K17/687 , H03K17/74
CPC分类号： H02J3/00 , H02M7/487 , H03K17/04106 , H03K17/04163 , H03K17/102 , H03K17/127 , H03K17/567 , H03K17/6874 , H03K17/74 , H03K2217/0009 , H03K2217/0036
摘要： At least one aspect of the disclosure is directed to an AC switching system. The AC switching system includes a first I/O, a second I/O, a first segment including a first plurality of switches, the first segment being coupled to the first I/O, a second segment including a second plurality of switches, the second segment being coupled with the first segment and coupled to the second I/O, a third segment including a diode, the third segment being coupled to the first I/O and coupled to a junction of the first segment and the second segment, and a fourth segment including a diode, the fourth segment being coupled to the second I/O and coupled to the junction of the first segment and the second segment.
摘要翻译：本公开的至少一个方面涉及AC交换系统。交流开关系统包括第一I / O，第二I / O，包括第一多个开关的第一段，第一段耦合到第一I / O，第二段包括第二多个开关，第二多个开关第二段与第一段耦合并耦合到第二I / O，第三段包括二极管，第三段耦合到第一I / O并耦合到第一段和第二段的接合处，以及包括二极管的第四段，第四段耦合到第二I / O并耦合到第一段和第二段的接合处。

10. 发明公开

EP3148077A1 DRIVER FOR A P-CHANNEL MOSFET 审中-公开
标题翻译： TREIBERFÜREIN P-KANAL-MOSFET
公开(公告)号：EP3148077A1
公开(公告)日：2017-03-29
申请号：EP15186921.1
申请日：2015-09-25
申请人： DET International Holding Limited
发明人： Alcalde, André Luis Pesco , Krumpholz, Christian
IPC分类号： H03K17/687 , H02M3/07
CPC分类号： H03K17/567 , H03K17/6877 , H03K2217/0072
摘要： The invention concerns a driver circuit (21) for driving a P-Channel MOSFET. The driver circuit (21) is fed by a DC voltage supplied at a power input (3) and it receives a control signal at a control input (4). The control signal includes the information for controlling a switching of a P-Channel MOSFET the gate of which is connected to a drive output (5) of the driver circuit (21). For generating the drive signal the driver circuit (21) includes a turn-off bipolar transistor (Q3) which is powered by the supply voltage received at the power input (3) in that its collector is connected to the power input (3). The control signal received at the control input (4) is amplified by means of a current amplifier (17) and fed to the base of the bipolar transistor (Q3) via an inverting capacitor (C2). In response to the amplified control signal at its base, the bipolar transistor (Q3) actively generates a turn-off signal and provides the turn-off signal to the drive output (5) in that the emitter of the bipolar transistor (Q3) is connected to the drive output (5). This driver circuit (21) is immune against a voltage build-up between the gate and the source of the P-Channel MOSFET during the turn-off period and the risk of undesired turn-on of the MOSFET during the OFF period is significantly reduced.
摘要翻译：本发明涉及用于驱动P沟道MOSFET的驱动电路（21）。驱动电路（21）由在电力输入端（3）提供的直流电压馈电，并在控制输入端（4）接收控制信号。控制信号包括用于控制其栅极连接到驱动器电路（21）的驱动输出（5）的P沟道MOSFET的开关的信息。为了产生驱动信号，驱动电路（21）包括由在电源输入（3）处接收的电源电压供电的关断双极晶体管（Q3），因为其集电极连接到电源输入端（3）。在控制输入端（4）处接收到的控制信号通过电流放大器（17）放大，并通过反相电容器（C2）馈送到双极晶体管（Q3）的基极。响应于其基极处的放大的控制信号，双极晶体管（Q3）主动产生关断信号并将关断信号提供给驱动输出（5），因为双极晶体管（Q3）的发射极为连接到驱动器输出（5）。该驱动器电路（21）在关断期间不受P沟道MOSFET的栅极和源极之间的电压积聚的影响，并且在OFF周期期间MOSFET的不期望的导通的风险显着降低。

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