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91. 发明授权

EP2414891B1 METHOD OF FABRICATING AN ELECTROCHROMIC DEVICE 有权转让
标题翻译：制造电致变色装置的方法
公开(公告)号：EP2414891B1
公开(公告)日：2016-11-30
申请号：EP10764874.3
申请日：2010-03-31
申请人： View, Inc.
发明人： WANG, Zhongchun , KURMAN, Eric , KOZLOWSKI, Mark , SCOBEY, Mike , DIXON, Jeremy , PRADHAN, Anshu
IPC分类号： G02F1/15
CPC分类号： G02F1/1523 , B05D5/06 , B23K20/10 , C03C17/3417 , C03C2217/94 , C23C10/28 , C23C14/021 , C23C14/022 , C23C14/024 , C23C14/046 , C23C14/08 , C23C14/083 , C23C14/085 , C23C14/086 , C23C14/14 , C23C14/185 , C23C14/3407 , C23C14/568 , C23C14/58 , C23C14/5806 , C23C14/5853 , G02F1/15 , G02F1/153 , G02F1/1533 , G02F1/155

92. 发明公开

EP3077566A1 SPUTTERING SOURCE ARRANGEMENT, SPUTTERING SYSTEM AND METHOD OF MANUFACTURING METAL-COATED PLATE-SHAPED SUBSTRATES 审中-公开
标题翻译：溅射源，溅射法生产金属涂层板形状的衬底
公开(公告)号：EP3077566A1
公开(公告)日：2016-10-12
申请号：EP14811797.1
申请日：2014-12-03
申请人： Oerlikon Advanced Technologies AG
发明人： WEICHART, Jürgen
IPC分类号： C23C14/04 , C23C14/16 , C23C14/35 , C23C14/34 , H01J37/34 , H01L21/285
CPC分类号： C23C14/046 , C23C14/165 , C23C14/3407 , C23C14/3485 , C23C14/3492 , C23C14/352 , H01J37/3405 , H01J37/3417 , H01J37/3423 , H01J37/3438 , H01J37/3467 , H01J37/3497 , H01L21/2855 , H01L21/76873 , H01L21/76898
摘要： For coating substrates (S) having along their surfaces to be coated high aspect ratio vias, a sputtering system has a sputtering source arrangement, which includes a first DC pulse operated magnetron sub-source (1203) and a second frame-shaped magnetron sub-source (1213) which latter is arranged, in the system, between the substrate (S) and the first magnetron sub-source (1203). The second magnetron sub-source (1213) may be operated in DC, pulsed DC, thereby also HIPIMS mode. The first magnetron sub-source (1203) is advantageously also operated in HIPIMS mode. The substrate (S) is biased by an Rf power source (1253).

93. 发明公开

EP3061844A1 SYSTEMS AND METHODS FOR OPTIMAL SOURCE MATERIAL DEPOSITION ALONG HOLE EDGES 有权转让
标题翻译：系统VERFAHRENFÜROPTIMALE AUSGANGSMATERIALABSCHEIDUNG ENTLANG VON LOCHKANTEN
公开(公告)号：EP3061844A1
公开(公告)日：2016-08-31
申请号：EP16157470.2
申请日：2016-02-25
申请人： United Technologies Corporation
发明人： TASK, Michael N. , BEERS, Russell A.
IPC分类号： C23C14/32 , C23C14/04 , H01J37/32 , F23R3/00
CPC分类号： C23C14/325 , C23C14/046 , C23C14/14 , F23M2900/05004 , F23R3/002 , F23R2900/00018 , H01J37/32055 , H01J37/32614
摘要： A method (10) for depositing a coating (12) of a source material (14) onto a panel (16) is disclosed. The method includes providing a cathodic arc (22), the cathodic arc including a target surface (24), the target surface disposed along a target deposition axis (33) and able to emit the source material as a generally cloud (23) of source material vapor and a generally conical stream of liquid particles (25) of the source material. The method further includes positioning the panel relative to the target surface based on a deposition angle (Θ), the deposition angle being between the target surface and an outer limit (31) of the generally conical stream of liquid particles of the source material. The method may further include emitting the source material from the target surface as the generally conical cloud of source material vapor and coating the edge with the cloud of source material vapor to provide an edge coating.
摘要翻译：公开了一种用于将源材料（14）的涂层（12）沉积到面板（16）上的方法（10）。该方法包括提供阴极弧（22），阴极弧包括目标表面（24），目标表面沿着目标沉积轴线（33）设置并且能够将源材料发射为大致云（23）的源材料蒸气和源材料的大致圆锥形的液体颗粒流（25）。该方法还包括基于沉积角度（〜）相对于目标表面定位面板，沉积角度在目标表面与源材料的液体颗粒的大致锥形流的外部极限（31）之间。该方法可以进一步包括将源材料从目标表面发射为大体圆锥形的源材料蒸气并且用源材料蒸气云覆盖边缘以提供边缘涂层。

94. 发明公开

EP2999805A1 METHOD FOR FILLING VIAS AND SUBSTRATE-VIA FILLING VACUUM PROCESSING SYSTEM 审中-公开
标题翻译：程序对填充孔接触和真空处理系统填补衬底的接触孔
公开(公告)号：EP2999805A1
公开(公告)日：2016-03-30
申请号：EP14725708.3
申请日：2014-05-23
申请人： Oerlikon Advanced Technologies AG
发明人： ELGHAZZALI, Mohamed , WEICHART, Jürgen
IPC分类号： C23C14/04
CPC分类号： C23C14/34 , C23C14/022 , C23C14/046 , C23C14/0623 , C23C14/3407 , C23C14/5826 , C23C14/5873 , C23F4/00 , H01J37/32431 , H01J37/3429 , H01J37/3476
摘要： Vias of at least approx. 1:1 aspect ratio in substrates are filled with material which exhibits a thermally driven amorphous/crystalline phase change. This is performed within a vacuum process chamber (50a). During a first timespan the material is sputter-deposited by DC sputtering from a material target (60). In a subsequent timespan a void, which may remain in the via as material covered by the addressed sputtering, is opened by means of etching performed with the help of an inductively coupled plasma generated by an Rf driven electric coil (40) and applying to the substrate (52) with the via an Rf bias.

95. 发明公开

EP2746425A4 THIN-FILM FORMATION METHOD, THIN-FILM FORMATION DEVICE, OBJECT TO BE TREATED HAVING COATING FILM FORMED THEREON, DIE AND TOOL 有权
标题翻译：一种用于形成薄膜器件FOR形成薄膜，为了与SURE形成的涂膜被处理对象，DIE和工具
公开(公告)号：EP2746425A4
公开(公告)日：2015-04-29
申请号：EP12833526
申请日：2012-09-20
申请人： SHIBAURA INST TECHNOLOGY
发明人： AIZAWA TATSUHIKO , MORITA HIROSHI , KUROSUMI SHUICHI
IPC分类号： C23C14/35 , C23C14/04 , C23C16/04 , C23C16/27 , C23C16/455 , C23C16/458 , C23C16/505
CPC分类号： C23C14/35 , C23C14/046 , C23C14/0605 , C23C14/351 , C23C16/045 , C23C16/26 , C23C16/45585 , C23C16/4585 , C23C16/509 , H01J37/32082 , H01J37/32669

96. 发明公开

EP2471065A4 SYSTEM FOR FABRICATING A PATTERN ON MAGNETIC RECORDING MEDIA 审中-公开
标题翻译：制度与图案，以磁记录介质
公开(公告)号：EP2471065A4
公开(公告)日：2013-01-30
申请号：EP10814294
申请日：2010-08-26
申请人： VEECO INSTR INC
发明人： PARANJPE AJIT , LUSE TODD ARTHUR , FREMGEN ROGER P , SRINIVASAN NARASIMHAN , ROOK KATRINA , DRUZ BORIS L , CELARU ADRIAN
IPC分类号： G11B5/65 , C23C14/50 , H01L21/687
CPC分类号： G11B5/855 , C23C14/042 , C23C14/046 , C23C14/505 , H01L21/67173 , H01L21/67709 , H01L21/67712 , H01L21/67718 , H01L21/67742 , H01L21/67754

97. 发明公开

EP2496729A1 VERFAHREN ZUM HERSTELLEN EINES GLEITLAGERELEMENTES 审中-公开
公开(公告)号：EP2496729A1
公开(公告)日：2012-09-12
申请号：EP10795601.3
申请日：2010-11-05
申请人： Miba Gleitlager GmbH
发明人： GÄRTNER, Walter
IPC分类号： C23C14/04 , F16C33/12
CPC分类号： C23C14/046 , F16C33/12 , F16C33/14 , F16C2204/20 , F16C2223/60
摘要： The invention relates to a method for producing a plain bearing element (1) by means of coating a surface (5) of a substrate with a tribologically effective sliding layer (6) by means of cathode sputtering in a gas atmosphere and using at least one metal target (16), wherein a substrate having a cylindrical cavity (3) is used, wherein the target (16) is arranged at least partially in the cavity (3), and wherein furthermore the discharge for sputtering the target (16) is supported or maintained by means of a third electrode (26).
摘要翻译：本发明涉及一种用于通过在气体气氛中通过阴极溅射用摩擦学有效的滑动层（6）涂覆基板的表面（5）并使用至少一个金属靶（16），其中使用具有圆柱形空腔（3）的基板，并且目标（16）至少部分地布置在空腔（3）中，此外用于溅射靶（16）的放电被支撑或通过第三电极（26）保持。

98. 发明公开

EP2454199A1 PRODUIT DE DEPOLLUTION D'UN FLUIDE ET PROCEDE D'OBTENTION 有权
标题翻译：多孔颗粒从它的制备流体和工艺中除去污染物的
公开(公告)号：EP2454199A1
公开(公告)日：2012-05-23
申请号：EP10752010.8
申请日：2010-07-13
申请人： Dioum, Serigne
发明人： Dioum, Serigne
IPC分类号： C02F1/28 , C02F9/00
CPC分类号： C02F1/288 , A01N25/08 , A01N25/34 , C02F1/005 , C02F1/283 , C02F2103/04 , C02F2201/006 , C02F2301/046 , C02F2303/04 , C02F2305/08 , C23C14/046 , C23C14/185 , C23C14/223 , A01N59/16 , A01N59/20
摘要： The invention relates to a product (10) for removing pollutants from a fluid, comprising a porous body (12) having a specific outer and inner surface (14), as well as a metallized layer (16), the thickness of which is at most nanoscale, covering at least one portion of the specific outer and inner surface (14) of the porous body (12). The metallized layer (16) includes at least one metal (Ag) bonded to the porous body (12) by chemical bonds (18) resulting intramolecular forces. Further, the metallized layer (16) includes silicon (Si) also bonded to the porous body (12) by chemical bonds (18) resulting from intramolecular forces. The method for obtaining the product (10) for removing pollutants comprises a step (102) of treating a porous body (12) having a specific outer and inner surface (14) in an inert gas plasma deposition reactor (24) with radiofrequency discharge, by immersing the porous body (12) into the plasma and injecting metal (Ag) into the plasma. The step (102) of treating the porous body also comprises an injection of silicon (Si) into the plasma.
摘要翻译：此产物（10），用于从流体中除去污染物包括，一方面，多孔体（12），其具有上外表面和内特定表面（14）和，另一方面，金属化层（16），该厚度的所有这些是至多纳米级，覆盖该多孔体（12）的外表面和内表面具体（14）的至少一部分。金属化层（16）包括至少接合至通过化学键（18）的多孔体（12）的金属（Ag）的没有由分子内力的作用引起的。此外，金属化层（16）包括硅（Si）键合的，从而通过从分子内力的作用所产生的化学键（18）的多孔体（12）。

99. 发明公开

EP2414890A2 FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES 有权转让
标题翻译：制造电致变色器件的低缺陷脆弱性
公开(公告)号：EP2414890A2
公开(公告)日：2012-02-08
申请号：EP10764872.7
申请日：2010-03-31
申请人： Soladigm, Inc.
发明人： KOZLOWSKI, Mark , KURMAN, Eric , WANG, Zhongchun , SCOBEY, Mike , DIXON, Jeremy , PRADHAN, Anshu , ROZBICKI, Robert
IPC分类号： G02F1/15 , G02F1/153
CPC分类号： G02F1/1523 , B05D5/06 , B23K20/10 , C03C17/3417 , C03C2217/94 , C23C10/28 , C23C14/021 , C23C14/022 , C23C14/024 , C23C14/046 , C23C14/08 , C23C14/083 , C23C14/085 , C23C14/086 , C23C14/14 , C23C14/185 , C23C14/3407 , C23C14/568 , C23C14/58 , C23C14/5806 , C23C14/5853 , G02F1/15 , G02F1/153 , G02F1/1533 , G02F1/155
摘要： Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

100. 发明公开

EP1990432A4 SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND SPUTTERING TARGET MATERIAL FOR USE IN THE METHOD 有权
标题翻译：半导体器件及其制造方法材料溅射靶，以便用于程序
公开(公告)号：EP1990432A4
公开(公告)日：2010-12-15
申请号：EP07737744
申请日：2007-02-27
申请人： ADVANCED INTERCONNECT MATERIAL
发明人： KOIKE JUNICHI
IPC分类号： C22C9/05 , C22C9/00 , C22C9/02 , C22C9/04 , C23C14/34 , H01L21/285 , H01L21/3205 , H01L23/52
CPC分类号： C23C14/08 , C23C14/027 , C23C14/046 , C23C14/3414 , C23C14/5806 , H01L21/2855 , H01L21/76831 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/12044 , H01L2924/00

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