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1. 发明公开

EP3007186A1 METAL NITRIDE MATERIAL FOR THERMISTORS, METHOD FOR PRODUCING SAME, AND FILM-TYPE THERMISTOR SENSOR 审中-公开
标题翻译：用于热敏电阻器的金属氮化物材料，其制造方法以及薄膜型热敏电阻传感器
公开(公告)号：EP3007186A1
公开(公告)日：2016-04-13
申请号：EP14808362.9
申请日：2014-05-26
申请人： Mitsubishi Materials Corporation
发明人： FUJITA, Toshiaki , TANAKA, Hiroshi , NAGATOMO, Noriaki
IPC分类号： H01C7/04 , C01G31/00 , C23C14/06 , C23C14/34 , C30B29/38 , G01K7/22 , H01C17/12
CPC分类号： H01C7/008 , C01B21/0602 , C01P2006/32 , C23C14/0036 , C23C14/0641 , C23C14/5826 , C30B23/02 , C30B29/38 , G01K7/22 , H01C7/006 , H01C7/04 , H01C17/12
摘要： Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V x Al y N z (where 0.70 ≤ y/(x+y) ≤ 0.98, 0.4 ≤ z ≤ 0.5, and x+y+z = 1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using a V-Al alloy sputtering target.
摘要翻译：本发明提供一种热敏电阻用金属氮化物材料及其制造方法以及薄膜型热敏电阻传感器，其具有高耐热性和高可靠性，并且能够不经焙烧而直接沉积在薄膜等上。用于热敏电阻的金属氮化物材料由通式：VxAlyNz（其中0.70≤y/（x + y）≤0.98,0.4≤z≤0.5和x + y + z = 1）表示的金属氮化物组成，其中，其晶体结构是六方纤锌矿型单相。用于制造热敏电阻用金属氮化物材料的方法包括使用V-Al合金溅射靶在含氮气氛中通过反应性溅射进行膜沉积的沉积步骤。

2. 发明公开

EP2754170A4 METHOD OF CRYSTALLISING THIN FILMS 审中-公开
标题翻译：结晶薄膜的方法
公开(公告)号：EP2754170A4
公开(公告)日：2015-04-29
申请号：EP12830475
申请日：2012-09-06
申请人： PANORAMA SYNERGY LTD
发明人： JEFFERY ROGER DUNSTAN
IPC分类号： H01L21/64 , H01L21/02
CPC分类号： H01L21/02689 , C23C14/5826 , H01L21/0234 , H01L21/02356 , H01L21/0254 , H01L21/02565 , H01L21/02631 , H01L21/02691 , H01L21/3105

3. 发明公开

EP2740815A1 METHOD FOR FORMING SILICON CARBIDE THIN FILM 有权
标题翻译： VERFAHREN ZUR BILDUNG EINER SILIZIUMKARBID-DÜNNSCHICHT
公开(公告)号：EP2740815A1
公开(公告)日：2014-06-11
申请号：EP11855264.5
申请日：2011-08-02
申请人： Shincron Co., Ltd.
发明人： SUGAWARA, Takuya , AOSHIMA, Hikaru , JIANG, Yousong , SHIONO, Ichiro , NAGAE, Ekishu
IPC分类号： C23C14/34 , C23C14/58
CPC分类号： C23C14/35 , C23C14/0078 , C23C14/0635 , C23C14/3464 , C23C14/5826 , G02B1/10
摘要： A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided, by which a film can be formed safely and efficiently in a short time also on a substrate having low heat resistance,.
The method of the present invention is a method for depositing a silicon carbide thin film on a moving substrate S by using a film formation apparatus 1 configured that a reaction process region 60 and film formation process regions 20 and 40 are arranged spatially separated from one another in a vacuum container 11 and processing in the regions 20, 40 and 60 can be controlled independently, wherein silicon targets 29a and 29b are sputtered in the region 20 and carbon targets 49a and 49b are sputtered in the region 40. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate S. Next, in the region 60, the interlayer thin film is exposed to plasma generated in an atmosphere of a mixed gas of an inert gas and hydrogen so as to convert the interlayer thin film into an ultrathin film. Then, the ultrathin film is subjected to successive formation of another interlayer thin film and successive film conversion into an ultrathin film repeatedly.
摘要翻译：提供了适用于光学用途的具有高透光率和高膜强度的碳化硅薄膜的薄膜沉积方法，通过该薄膜沉积方法也可以在短时间内在耐热性低的基板上形成薄膜。本发明的方法是通过使用成膜装置1将移动的基板S上的碳化硅薄膜沉积的方法，该成膜装置1将反应处理区域60和成膜处理区域20和40彼此空间分开地布置在真空容器11中，并且可以独立地控制区域20,40和60中的处理，其中硅靶29a和29b溅射在区域20中，并且碳靶49a和49b溅射在区域40中。由此，层间薄膜在基板S上形成含有硅和碳的膜。接着，在区域60中，将层间薄膜暴露于在惰性气体和氢气的混合气体的气氛中产生的等离子体，以将层间薄膜转化为超薄的电影。然后，将超薄膜连续地形成另一层间薄膜，并连续地将薄膜转化成超薄薄膜。

4. 发明公开

EP2498279A1 Procédé de traitement d'une couche de nitrure de métal oxydée 有权
标题翻译： Behandlungsverfahren einer oxidiertenÜbergangsmetall-Nitrid-Schicht
公开(公告)号：EP2498279A1
公开(公告)日：2012-09-12
申请号：EP12157408.1
申请日：2012-02-29
申请人： Altis Semiconductor
发明人： Aubie, Michel , De Person, Pierre
IPC分类号： H01L21/285 , H01L21/321 , C23C14/58 , C23C14/06 , H01L21/768 , H01L33/40
CPC分类号： H01L21/321 , C23C14/0641 , C23C14/5826 , C23C14/5853 , H01L21/7685 , H01L21/76861 , H01L29/452 , H01L29/456 , H01L33/40 , H01L2933/0016 , Y10S257/915
摘要： La présente invention concerne un procédé de traitement d'une couche de nitrure de métal oxydée, comprenant les étapes consistant à :
i. oxyder une couche (2) d'oxyde de métal à la surface d'une première couche (1) de nitrure dudit métal, à l'aide d'un plasma d'une espèce oxydante ayant un degré d'oxydation supérieur à celui de l'oxygène pour former une couche (3) métallique d'un composé à base dudit métal, et
ii. réduire la couche (3) métallique formée à l'étape i à l'aide d'un plasma d'hydrogène et d'azote, pour former une deuxième couche (4) de nitrure dudit métal.
摘要翻译：该方法包括使用具有高于氧的氧化度的氧化等离子体物质来氧化由氮化物金属制成的第一层（1）的表面上的金属氧化物层（2），以形成氮化物金属层或氟化物金属层和使用氢等离子体和氮等离子体还原氮化物金属层，以形成由氮化物金属制成的第二层。发光二极管包括独立权利要求。

5. 发明授权

EP2037001B1 TAKE UP TYPE VACUUM VAPOR DEPOSITION DEVICE 有权
标题翻译：记录型真空汽分离装置
公开(公告)号：EP2037001B1
公开(公告)日：2011-09-14
申请号：EP07744842.1
申请日：2007-06-07
申请人： ULVAC, INC.
发明人： HAYASHI, Nobuhiro , HIRONO, Takayoshi , TADA, Isao , NAKATSUKA, Atsushi , KOMATSU, Kenji
IPC分类号： C23C14/56 , C23C14/24
CPC分类号： C23C14/562 , C23C14/02 , C23C14/5826
摘要： A take up type vacuum vapor deposition device in which an occurrence of a thermally affected area on a film can be suppressed without impairing productivity. The take up type vacuum vapor deposition device (10) has a payout roller (13), a take up roller (15) for taking up a film (12) paid out from the payout roller (13), a cooling roller (14) disposed between the payout roller (13) and the take up roller (15) and cooling the film (12) by being in intimate contact with it, an evaporation source (16) disposed facing the cooling roller (14) and depositing an evaporation material on the film (12), and an electron beam irradiator (21) disposed between the payout roller (13) and the evaporation source (16) and irradiating the traveling film (12) with an electron beam. The electron beam irradiator (21) has a filament (31) for emitting electrons when it is heated by conduction and also has DC generation means for supplying a DC current to the filament (31).

6. 发明公开

EP2140038A2 GROUP-III METAL NITRIDE AND PREPARATION THEREOF 审中-公开
标题翻译： GROUP III金属氮化物及其制备方法
公开(公告)号：EP2140038A2
公开(公告)日：2010-01-06
申请号：EP08710229.9
申请日：2008-02-21
申请人： Mosaic Crystals Ltd.
发明人： EINAV, Moshe
IPC分类号： C23C14/06 , C23C14/14 , C23C14/58 , C30B23/02 , C30B29/40
CPC分类号： C23C14/0617 , C23C14/0026 , C23C14/14 , C23C14/5826 , C23C14/586 , C30B23/02 , C30B25/02 , C30B29/403 , C30B29/406
摘要： A method for forming a group-III metal nitride material film attached to a substrate, the method including the procedures of subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500°C-800°C. The method further includes the procedures of introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops. The method also includes the procedures of maintaining the working pressure and the active nitrogen until the group III metal nitride molecules diffuse into the group III metal drops, forming nitride/metal solution drops, and until the nitride/metal solution drops turn into a wetting layer on the substrate, and continuing to increase the concentration of group III metal nitride molecules in the wetting layer until all the group III metal atoms contained in the wetting layer are exhausted, and the wetting layer transforms into a group III metal nitride film. According to another aspect of the disclosed technique, if the wetting layer is relatively thin, then group-III metal nitride molecules diffuse into the wetting layer, during the procedure of continuing to increase, thereby increasing the viscosity thereof, transforming the wetting layer into a solid amorphous group III metal nitride film. According to a further aspect of the disclosed technique, if the wetting layer is relatively thick, then a crystalline seeding layer is formed on the surface of the wetting layer, during the procedure of continuing to increase, and wherein the active nitrogen diffuses through the seeding layer, reacting with group-III metal in the wetting layer, thereby further thickening the seeding layer, transforming the wetting layer into a crystalline group III metal nitride film.

7. 发明公开

EP1816489A3 Optical article and manufacturing method of the same 审中-公开
标题翻译：光学制品及其制造方法
公开(公告)号：EP1816489A3
公开(公告)日：2008-09-10
申请号：EP07002080.5
申请日：2007-01-31
申请人： Seiko Epson Corporation
发明人： Suzuki, Keiichi
IPC分类号： C03C17/34 , C23C14/06 , C23C14/22 , C23C14/58 , C23C16/30 , C23C16/40 , G02B1/11
CPC分类号： C23C14/10 , C23C14/5826 , C23C14/5833 , C23C14/586 , G02B1/115
摘要： Disclosed is an optical article including a layer that has SiO x as a main component and is formed on an optical substrate, directly or with at least one different layer interposed between the layer and the optical substrate, a surface of the layer, which is in the opposite side to the optical substrate, being nitrided.

8. 发明公开

EP1950321A1 Optical article and manufacturing method thereof 有权转让
标题翻译： Herstellungsverfahrenfüroptischen Artikel
公开(公告)号：EP1950321A1
公开(公告)日：2008-07-30
申请号：EP08000793.3
申请日：2008-01-16
申请人： Seiko Epson Corporation
发明人： Fukui, Tomohito , Suzuki, Keiichi
IPC分类号： C23C14/06 , C23C14/22 , C23C14/58 , G02B1/11
CPC分类号： G02B1/115 , C23C14/0676 , C23C14/083 , C23C14/221 , C23C14/5826 , G02B1/105 , G02B1/113 , G02B1/14
摘要： An optical article includes: an optical base; and a layer that is provided on the optical base and contains SiO 2 as a main component, the layer being a silicon-nitride-containing silicon oxide layer containing Si s O t N u (s > 0, T ≥ 0, u > 0).
摘要翻译：光学制品包括：光学基底; 以及设置在光学基底上并含有SiO 2作为主要成分的层，该层是含有氮化硅的氧化硅层，其含有Si（O）O（s> 0，T‰¥0，u> 0）。

9. 发明公开

EP1816489A2 Optical article and manufacturing method of the same 审中-公开
标题翻译： Optischer Artikel und Herstellungsverfahrendafür
公开(公告)号：EP1816489A2
公开(公告)日：2007-08-08
申请号：EP07002080.5
申请日：2007-01-31
申请人： SEIKO EPSON CORPORATION
发明人： Suzuki, Keiichi
IPC分类号： G02B1/04 , C03C17/34 , C03C17/42
CPC分类号： C23C14/10 , C23C14/5826 , C23C14/5833 , C23C14/586 , G02B1/115
摘要： Disclosed is an optical article including a layer that has SiO x as a main component and is formed on an optical substrate, directly or with at least one different layer interposed between the layer and the optical substrate, a surface of the layer, which is in the opposite side to the optical substrate, being nitrided.
摘要翻译：公开了一种光学制品，其包括具有SiO x作为主要成分并直接形成在光学基底上的层或者介于该层与光学基底之间的至少一个不同的层，该层的表面位于与光学基板的相对侧被氮化。

10. 发明公开

EP1452619A1 THIN METAL OXIDE FILM AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG VOMDÜNNENMETALLOXIDFILM
公开(公告)号：EP1452619A1
公开(公告)日：2004-09-01
申请号：EP02768137.8
申请日：2002-09-30
申请人： Advanced Systems of Technology Incubation
发明人： FUKUHISA, Koji, c/o Advanced Systems of Technology , NAKAJIMA, Akira, c/o Adv. Systems of Technology , SHINOHARA, Kenji, c/o Adv. Systems of Technology , WATANABE, Toshiya , OHSAKI, Hisashi , SERIKAWA, Tadashi
IPC分类号： C23C8/36 , C23C14/08 , C23C14/58
CPC分类号： C01B13/145 , C01P2002/01 , C01P2004/03 , C23C8/02 , C23C8/36 , C23C14/08 , C23C14/083 , C23C14/086 , C23C14/5826 , C23C18/14 , C23C26/00 , H01L21/02175 , H01L21/02186 , H01L21/02197 , H01L21/02266 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/02356 , H01L21/31604 , H01L21/31616 , H01L21/31691 , H01L31/022466 , H01L31/1884
摘要： The present invention provides a method for producing a crystalline metal oxide thin film by first depositing a substantially amorphous metal oxide film, and thereafter, as a post treatment, exposing the film to low temperature plasma in a high frequency electric field at 180°C or less, and the crystalline metal oxide thin film produced by this method. Because the producing method according to the present invention allows a dense and homogenous crystalline metal oxide thin film to be formed onto a substrate at a low temperature without requiring active heat treatment, a metal oxide thin film having desirable characteristics can be formed without damaging the characteristics of a substrate even if the substrate has comparatively low heat resistance.
摘要翻译：本发明提供一种通过首先沉积基本无定形的金属氧化物膜制备结晶金属氧化物薄膜的方法，然后作为后处理，在180℃的高频电场中将膜暴露于低温等离子体，或并且通过该方法制造的结晶金属氧化物薄膜。由于根据本发明的制造方法允许在低温下在基板上形成致密且均匀的结晶金属氧化物薄膜而不需要主动热处理，因此可以形成具有期望特性的金属氧化物薄膜而不损害特性即使基板具有较低的耐热性。

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