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1. 发明申请

WO01098839A2 INTERFEROMETRY SYSTEM HAVING A DYNAMIC BEAM-STEERING ASSEMBLY FOR MEASURING ANGLE AND DISTANCE AND EMPLOYING OPTICAL FIBERS FOR REMOTE PHOTOELECTRIC DETECTION 审中-公开
标题翻译：具有用于测量角度和距离的动态光束转向装置的干涉仪系统和用于远程光电检测的使用光纤
公开(公告)号：WO01098839A2
公开(公告)日：2001-12-27
申请号：PCT/US2001/019396
申请日：2001-06-18
IPC分类号： G01B9/02 , G03F7/20 , G03F720
CPC分类号： G01B9/02019 , G01B9/02003 , G01B9/02061 , G01B9/02068 , G01B2290/70 , G03F7/70775
摘要： An interferometry system including: an interferometer which during operation directs a measurement beam along a measurement path contacting a measurement object and combines at least portion of the measurement beam with another beam to for an overlapping pair of exit beams, the interferometer including a beam steering assembly having a beam steering element and a positioning system to orient the beam steering element, the beam steering element positioned to direct the measurement beam, the measurement beam contacting the beam steering element; a control circuit which during operation causes the positioning system to reorient the beam steering element in response to a change in at least one of angular orientation and position of the measurement object; a photodetector; and an optical coupling an output beam derived from the overlapping pair of exit beams from the interferometer to the photodetector.
摘要翻译：一种干涉测量系统，包括：干涉仪，其在操作期间沿着与测量对象接触的测量路径引导测量光束，并将所述测量光束的至少一部分与另一光束组合以用于重叠的一对出射光束，所述干涉仪包括光束转向组件具有光束操纵元件和定位系统以定向所述光束操纵元件，所述光束操纵元件定位成引导所述测量光束，所述测量光束接触所述光束操纵元件; 控制电路，其在操作期间使得所述定位系统响应于所述测量对象的角度取向和位置中的至少一个的变化来重新定向所述光束操纵元件; 光检测器; 以及光耦合从源自干涉仪的重叠出射光束到光电检测器的输出光束。

2. 发明授权

US06794118B2 Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process 失效
标题翻译：制造半导体集成电路器件的方法，以及在该过程中使用的曝光系统和掩模检查方法
公开(公告)号：US06794118B2
公开(公告)日：2004-09-21
申请号：US09922656
申请日：2001-08-07
申请人： Yoshihiko Okamoto , Noboru Moriuchi
发明人： Yoshihiko Okamoto , Noboru Moriuchi
IPC分类号： G03F720
CPC分类号： G03F1/26 , G03F1/29 , G03F1/36 , G03F1/50 , G03F1/70 , G03F1/84 , G03F7/2024 , G03F7/70208 , G03F7/70275 , G03F7/70283 , G03F7/70466 , G03F9/00 , H01L27/105 , H01L27/1052 , Y10S430/146 , Y10S438/948
摘要： Herein disclosed is an exposure technology for a semiconductor integrated circuit device which has a pattern as fine as that of an exposure wavelength. The technology contemplates to improve the resolution characteristics of the pattern by making use of the mutual interference of exposure luminous fluxes.
摘要翻译：这里公开了一种具有与曝光波长相同的图案的半导体集成电路器件的曝光技术。该技术考虑通过利用曝光光通量的相互干扰来提高图案的分辨率特性。

3. 发明授权

US06777168B2 Multiple photolithographic exposures with different clear patterns 失效
标题翻译：具有不同清晰图案的多次光刻曝光
公开(公告)号：US06777168B2
公开(公告)日：2004-08-17
申请号：US10020452
申请日：2001-12-04
申请人： John Cauchi
发明人： John Cauchi
IPC分类号： G03F720
CPC分类号： G03F1/36 , G03F1/70 , G03F7/2022 , G03F7/203
摘要： A photoresist layer is exposed two or more times. At least one exposure is conducted through a regular mask, and at least one exposure through a modified mask with a clear region overlapping the position of a non-clear region of the first mask. The radiation dose used with the modified mask is insufficient by itself to create a resist pattern on the substrate. The exposure through the modified mask alleviates the resist underexposure in concave corners of the opaque pattern of the regular mask. Instead of the modified mask, an exposure without a mask can be performed.
摘要翻译：光致抗蚀剂层暴露两次或更多次。通过规则掩模进行至少一次曝光，并且通过具有与第一掩模的非透明区域的位置重叠的透明区域的修改的掩模进行至少一次曝光。与修改的掩模一起使用的辐射剂量本身不足以在基底上产生抗蚀剂图案。通过改良掩模的曝光减轻了正常掩模的不透明图案的凹角中的抗蚀剂曝光不足。代替修改的掩模，可以进行无掩模的曝光。

4. 发明授权

US06767685B2 Plate-making method, plate-making apparatus used in such plate-making method, and image recording material 失效
公开(公告)号：US06767685B2
公开(公告)日：2004-07-27
申请号：US09726507
申请日：2000-12-01
申请人： Akinori Harada , Nobufumi Mori
发明人： Akinori Harada , Nobufumi Mori
IPC分类号： G03F720
CPC分类号： B41M5/368 , B41C1/1008 , B41C1/1016 , B41C1/1025 , B41C1/1041 , B41C2201/02 , B41C2201/14 , B41C2210/02 , B41C2210/04 , B41C2210/06 , B41C2210/24 , G03F7/2055 , Y10S430/146
摘要： A plate-making method is capable of recording a sharp image on a photosensitive plate, and is applicable to a process operation executed in a light room, while adverse influences caused by laser flares can be hardly received. Ultra-short pulse laser light emitted from a Ti:Al2O3 laser light source is modulated by an AOM (acousto-optic modulating element). The modulated laser light is focused by a collective lens onto a high-sensitive photopolymer layer of a photosensitive plate-making material. The focused ultra-short pulse laser light may cause a photopolymerization reaction in a laser-light-irradiated portion of the high-sensitive photopolymer layer by way of a multiple photon absorption phenomenon, so as to form a hardened portion.

5. 发明授权

US06696227B2 Shift multi-exposure method 有权
标题翻译：移位多曝光法
公开(公告)号：US06696227B2
公开(公告)日：2004-02-24
申请号：US10016893
申请日：2001-12-13
申请人： Chung-Wei Hsu , Ron-Fu Chu
发明人： Chung-Wei Hsu , Ron-Fu Chu
IPC分类号： G03F720
CPC分类号： G03F7/70466
摘要： The present invention provides a shift multi-exposure method for defining a regular pattern by a photomask. The method comprises the following steps. First, a photoresist layer comprising a first region and a second region is formed on a substrate. Then, a first pattern is defined on the first region by the photomask. Next, the photomask is moved a predetermined distance, and a second pattern is defined on the second region by the photomask. Finally, development is performed to display the first pattern and the second pattern on the photoresist layer.
摘要翻译：本发明提供一种用于通过光掩模定义规则图案的偏移多曝光方法。该方法包括以下步骤。首先，在基板上形成包括第一区域和第二区域的光致抗蚀剂层。然后，通过光掩模在第一区域上定义第一图案。接下来，将光掩模移动预定距离，并且通过光掩模在第二区域上限定第二图案。最后，进行显影以在光致抗蚀剂层上显示第一图案和第二图案。

6. 发明授权

US06664999B2 Image-recording device and method 有权
标题翻译：图像记录装置和方法
公开(公告)号：US06664999B2
公开(公告)日：2003-12-16
申请号：US10308998
申请日：2002-12-04
申请人： Masahiro Ohba , Ichirou Miyagawa , Fumiaki Miyamaru
发明人： Masahiro Ohba , Ichirou Miyagawa , Fumiaki Miyamaru
IPC分类号： G03F720
CPC分类号： B41J2/435
摘要： At an exposure section, a recording head carries out exposure processing by irradiating a light beam from a fiber array light source through a collimator lens and a condensing lens to a printing plate. A temperature sensor of the recording head measures temperature of the recording head. A pulse motor is driven on the basis of the measured temperature, and thus a separation between the collimator lens and the condensing lens is adjusted. Consequently, regardless of expansion or contraction of the recording head due to temperature changes, the separation between the collimator lens and the condensing lens can be kept constant by the pulse motor. Therefore, even when the light beam incident on the condensing lens is divergent, a shift in magnification of the recorded image can be prevented regardless of the temperature variations of the recording head.
摘要翻译：在曝光部分，记录头通过将来自光纤阵列光源的光束通过准直透镜和聚光透镜照射到印刷版上进行曝光处理。记录头的温度传感器测量记录头的温度。基于测量的温度驱动脉冲电机，因此调整准直透镜和聚光透镜之间的间隔。因此，无论由于温度变化引起的记录头的膨胀或收缩，准直透镜和聚光透镜之间的间隔可通过脉冲电机保持恒定。因此，即使入射在聚光透镜上的光束发散，也可以防止记录图像的放大率的偏移，而与记录头的温度变化无关。

7. 发明授权

US06455233B1 Micromachining using high energy light ions 失效
标题翻译：微加工使用高能轻离子
公开(公告)号：US06455233B1
公开(公告)日：2002-09-24
申请号：US09297577
申请日：1999-07-06
申请人： Frank Watt , Stuart Victor Springham , Thomas Osipowicz , Mark Breese
发明人： Frank Watt , Stuart Victor Springham , Thomas Osipowicz , Mark Breese
IPC分类号： G03F720
CPC分类号： G03F7/2065 , H01J2237/31755
摘要： Structures of microminiature dimensions are formed by scanning a nearly parallel beam of high energy light ions across the surface of a resist material such as PMMA in a predetermined pattern. The resulting chemical changes in the exposed resist material allows a chemical developer to remove the exposed material while leaving the unexposed material substantially unaffected. In addition because the ions have a well defined range in the material depending on their energy, the resist can be exposed to a predetermined well defined depth. By this method, resist structures of three dimensional complexity can be micromachined. This is achieved by simultaneously scanning the beam and orienting the resist layer in a controlled manner. Further enhancement may be achieved by the use of multiple deposition and exposure of resist layers. These resist microstructures may be further utilized to produce microstructures in other materials by the application of processes such as electroplating and micromoulding.
摘要翻译：通过以预定图案扫描几乎平行的高能轻离子束穿过诸如PMMA的抗蚀剂材料的表面而形成微尺寸尺寸的结构。暴露的抗蚀剂材料的所得化学变化允许化学显影剂除去暴露的材料，同时使未曝光的材料基本上不受影响。此外，由于离子根据其能量在材料中具有良好限定的范围，所以抗蚀剂可以暴露于预定的良好限定的深度。通过这种方法，三维复杂度的抗蚀结构可以被微加工。这通过同时扫描光束并以受控的方式定向抗蚀剂层来实现。可以通过使用多次沉积和抗蚀剂层的曝光来实现进一步的增强。这些抗蚀剂微结构可以进一步用于通过应用诸如电镀和微成型的工艺在其它材料中产生微结构。

8. 发明授权

US06426177B2 Single component developer for use with ghost exposure 失效
标题翻译：用于幽灵曝光的单组件开发人员
公开(公告)号：US06426177B2
公开(公告)日：2002-07-30
申请号：US09748975
申请日：2000-12-27
申请人： Thomas B. Faure , Steven D. Flanders , Lyndon S. Gibbs , James P. Levin , Harold G. Linde , Joseph L. Malenfant, Jr. , Jeffrey F. Shepard
发明人： Thomas B. Faure , Steven D. Flanders , Lyndon S. Gibbs , James P. Levin , Harold G. Linde , Joseph L. Malenfant, Jr. , Jeffrey F. Shepard
IPC分类号： G03F720
CPC分类号： G03F7/3021 , G03F7/325
摘要： A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).
摘要翻译：用于开发共聚物光敏抗蚀剂的方法，其中单一溶剂与水坑显影工具结合使用。共聚物抗蚀剂为ZEP 7000，显色剂为3-乙氧基丙酸乙酯（EEP）。

9. 发明授权

US06387596B2 Method of forming resist images by periodic pattern removal 失效
标题翻译：通过周期性图案去除形成抗蚀剂图像的方法
公开(公告)号：US06387596B2
公开(公告)日：2002-05-14
申请号：US09385929
申请日：1999-08-30
申请人： Daniel C. Cole , Edward W. Conrad , David V. Horak , Randy W. Mann , Paul W. Pastel , Jed H. Rankin , Andrew J. Watts
发明人： Daniel C. Cole , Edward W. Conrad , David V. Horak , Randy W. Mann , Paul W. Pastel , Jed H. Rankin , Andrew J. Watts
IPC分类号： G03F720
CPC分类号： G03F7/70125 , G03F7/203 , G03F7/70466
摘要： The present invention provides a method of forming nested and isolated images in a photosensitive resist. In the disclosed method, the entire surface of the photosensitive resist or selected regions thereof is exposed to a first mask having a set of nested, i.e. repeating pattern or grid images thereon, and then exposed to a second mask in order to remove unwanted portions of the nested image, so as to provide regions of nested and regions of isolated images in said photosensitive resist. The method may also be used to form regions having images in proximity to one another and regions having isolated images by exposing the entire surface of the photosensitive resist to a first mask having repeating patterns, and then removing entire or portions of the repeating patterns by exposure of the photosensitive resist with a second mask.
摘要翻译：本发明提供了一种在光敏抗蚀剂中形成嵌套和分离的图像的方法。在所公开的方法中，光敏抗蚀剂或其选择的区域的整个表面暴露于具有一套嵌套的即第一掩模，即在其上重复图案或网格图像的第一掩模，然后暴露于第二掩模以便去除不需要的部分嵌套图像，以便在所述光敏抗蚀剂中提供嵌套区域和孤立图像区域。该方法还可以用于通过将光敏抗蚀剂的整个表面暴露于具有重复图案的第一掩模，然后通过曝光去除整个或部分重复图案，从而形成具有彼此接近的图像的区域和具有隔离图像的区域的光敏抗蚀剂。

10. 发明授权

US06387578B1 Post-exposure heat treatment to reduce surface roughness of PMMA surfaces formed by radiation lithography 失效
标题翻译：曝光后热处理以减少通过辐射光刻形成的PMMA表面的表面粗糙度
公开(公告)号：US06387578B1
公开(公告)日：2002-05-14
申请号：US09566261
申请日：2000-05-05
申请人： Kun Lian , Zhong-Geng Ling
发明人： Kun Lian , Zhong-Geng Ling
IPC分类号： G03F720
CPC分类号： G03F7/38 , Y10S430/167 , Y10S430/168
摘要： A method to decrease the surface roughness of exposed PMMA surfaces has been discovered. PMMA surface roughness was decreased by a post-exposure heat treatment of less than 70° C. The optimum post-exposure heat treatment to produce a PMMA microstructures with a smooth surface was found to be about 60° C. for about 30 min. The structural features of post-exposure heat-treated PMMA patterns were not statistically different from otherwise identical features of untreated PMMA patterns. This method produces a smoother PMMA structure that may then optionally be glued on a substrate or that may be assembled with other PMMA structures into a three-dimensional or multilayer microstructure.
摘要翻译：已经发现了降低暴露的PMMA表面的表面粗糙度的方法。 PMMA表面粗糙度通过低于70℃的曝光后热处理降低。发现用于产生具有光滑表面的PMMA微结构的最佳曝光后热处理约为60℃约30分钟。后曝光热处理的PMMA图案的结构特征与未处理的PMMA图案的其他相同特征没有统计学差异。该方法产生更平滑的PMMA结构，然后PMMA结构可以任选地胶合在基底上，或者可以与其它PMMA结构组装成三维或多层微结构。

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