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1. 发明授权

US06426177B2 Single component developer for use with ghost exposure 失效
标题翻译：用于幽灵曝光的单组件开发人员
公开(公告)号：US06426177B2
公开(公告)日：2002-07-30
申请号：US09748975
申请日：2000-12-27
申请人： Thomas B. Faure , Steven D. Flanders , Lyndon S. Gibbs , James P. Levin , Harold G. Linde , Joseph L. Malenfant, Jr. , Jeffrey F. Shepard
发明人： Thomas B. Faure , Steven D. Flanders , Lyndon S. Gibbs , James P. Levin , Harold G. Linde , Joseph L. Malenfant, Jr. , Jeffrey F. Shepard
IPC分类号： G03F720
CPC分类号： G03F7/3021 , G03F7/325
摘要： A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).
摘要翻译：用于开发共聚物光敏抗蚀剂的方法，其中单一溶剂与水坑显影工具结合使用。共聚物抗蚀剂为ZEP 7000，显色剂为3-乙氧基丙酸乙酯（EEP）。

2. 发明授权

US06270949B1 Single component developer for copolymer resists 失效
标题翻译：用于共聚物抗蚀剂的单组分显影剂
公开(公告)号：US06270949B1
公开(公告)日：2001-08-07
申请号：US09529316
申请日：2000-04-11
申请人： Thomas B. Faure , Steven D. Flanders , James P. Levin , Harold G. Linde , Jeffrey F. Shepard
发明人： Thomas B. Faure , Steven D. Flanders , James P. Levin , Harold G. Linde , Jeffrey F. Shepard
IPC分类号： G03F730
CPC分类号： G03F7/3021 , G03F7/325
摘要： A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).
摘要翻译：用于开发共聚物光敏抗蚀剂的方法，其中单一溶剂与水坑显影工具结合使用。共聚物抗蚀剂为ZEP 7000，显色剂为3-乙氧基丙酸乙酯（EEP）。

3. 发明授权

US06534225B2 Tapered ion implantation with femtosecond laser ablation to remove printable alternating phase shift features 失效
标题翻译：锥形离子注入与飞秒激光烧蚀消除可打印交替相移特征
公开(公告)号：US06534225B2
公开(公告)日：2003-03-18
申请号：US09892957
申请日：2001-06-27
申请人： Steven D. Flanders , Dennis M. Hayden , Timothy E. Neary
发明人： Steven D. Flanders , Dennis M. Hayden , Timothy E. Neary
IPC分类号： G03F900
CPC分类号： G03F1/30 , G03F1/72
摘要： The present invention provides various methods for eliminating printable alternating phase shift defects from an alternating phase shift mask without the need of using a trim mask. Specifically, unwanted printable defects are removed by employing methods which provide a gradual sloped region in the transparent or semi-transparent substrate which is formed in an area of the substrate opposite to that of the opaque image which is formed thereon.
摘要翻译：本发明提供了用于从交替的相移掩模中消除可印刷交替相移缺陷的各种方法，而不需要使用修剪掩模。具体而言，通过采用在与形成在其上的不透明图像相反的基板的区域中形成的透明或半透明基板中提供逐渐倾斜的区域的方法来去除不需要的可印刷缺陷。

4. 发明授权

US5503951A Attenuating phase-shift mask structure and fabrication method 失效
标题翻译：衰减相移掩模结构和制作方法
公开(公告)号：US5503951A
公开(公告)日：1996-04-02
申请号：US425667
申请日：1995-04-17
申请人： Steven D. Flanders , David S. O'Grady
发明人： Steven D. Flanders , David S. O'Grady
IPC分类号： G03F1/32 , H01L21/027 , G03F9/00
CPC分类号： G03F7/2022 , G03F1/32
摘要： An attenuating, phase-shift, semiconductor fabrication mask having recessed attenuating and phase-shifting regions that is not susceptible to phase defects in the printing regions of the mask. This desirable result is accomplished by not altering the surface of the fully transmissive regions of the mask and by recessing the attenuating regions of the mask relative to the fully transmissive regions.A method of forming the recessed attenuated phase-shift mask is also included. The process begins by forming recesses in the regions of the mask substrate where phase-shifting is desired and back filling these recessed regions with a selected thickness of attenuating material so that the attenuation effect of the deposited material together with the depth of the recess co-act to shift the light approximately 180.degree. (.pi. radians) from the light transmitted through the adjacent transmissive regions of the mask to create by destructive interference a sharp delineation at the edges of the projected mask image.
摘要翻译：具有凹陷衰减和相移区域的衰减相移半导体制造掩模，其对掩模的印刷区域中的相位缺陷不敏感。这种期望的结果是通过不改变掩模的完全透射区域的表面和通过使掩模的衰减区域相对于完全透射区域凹陷而实现的。还包括形成凹陷衰减相移掩模的方法。该过程开始于在掩模基板的区域中形成凹槽，其中需要相移，并且以选定的衰减材料厚度向这些凹陷区域填充这些凹陷区域，使得沉积材料的衰减效应与凹槽的深度共同作用，用于将光从大约180度（pi弧度）移动通过掩模的相邻透射区域传播的光以通过相消干涉在投影掩模图像的边缘处形成锐利描绘。

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