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1. 发明授权

US3484302A Method of growing semiconductor crystals 失效
标题翻译：生长半导体晶体的方法
公开(公告)号：US3484302A
公开(公告)日：1969-12-16
申请号：US3484302D
申请日：1967-01-16
申请人： FUJITSU LTD
发明人： MAEDA KAZUO , SATO JUNZI
IPC分类号： C30B13/02 , H01L21/00 , H01L7/34
CPC分类号： C30B13/02 , H01L21/00 , Y10S148/043 , Y10S148/107 , Y10S148/166

2. 发明授权

US3360406A Temperature gradient zone melting and growing of semiconductor material 失效
标题翻译：温度梯度区熔化和半导体材料的生长
公开(公告)号：US3360406A
公开(公告)日：1967-12-26
申请号：US51153065
申请日：1965-12-03
申请人： BELL TELEPHONE LABOR INC
发明人： STANLEY SUMSKI
IPC分类号： C30B13/02
CPC分类号： C30B13/02 , Y10S148/107 , Y10S148/148 , Y10S148/166 , Y10S438/931

3. 发明授权

US3979230A Method of making isolation grids in bodies of semiconductor material 失效
标题翻译：在半导体材料体中制造隔离栅的方法
公开(公告)号：US3979230A
公开(公告)日：1976-09-07
申请号：US519913
申请日：1974-11-01
申请人： Thomas R. Anthony , Harvey E. Cline
发明人： Thomas R. Anthony , Harvey E. Cline
IPC分类号： H01L21/24 , H01L21/40 , H01L21/761 , H01L29/04 , H01L21/228
CPC分类号： H01L29/04 , H01L21/24 , H01L21/40 , H01L21/761 , Y10S148/085 , Y10S148/107 , Y10S148/115 , Y10S148/166
摘要： An isolation grid is produced by the migration of a metal-rich liquid zone of material through a body of semiconductor material. Planar orientation of the surface through which migration is initiated, directions of wire alignment in the surface, wire sizes, direction of wire migration and simultaneous migration of intersecting liquid wires are disclosed herein. P-N junctions of the grid produced behind the migrated wires have substantially ideal voltage breakdown characteristics.
摘要翻译：隔离栅是通过富含金属的液体区域迁移通过半导体材料体来产生的。本文公开了通过其开始迁移的表面的平面取向，表面中的线对准的方向，线尺寸，线移动的方向和相交的液体线的同时迁移。在迁移线后面产生的栅格的P-N结具有基本上理想的电压击穿特性。

4. 发明授权

US3904442A Method of making isolation grids in bodies of semiconductor material 失效
标题翻译：在半导体材料体中制造隔离栅的方法
公开(公告)号：US3904442A
公开(公告)日：1975-09-09
申请号：US41102273
申请日：1973-10-30
申请人： GEN ELECTRIC
发明人： ANTHONY THOMAS R , CLINE HARVEY E
IPC分类号： H01L21/208 , H01L21/24 , H01L21/761 , H01L7/34
CPC分类号： H01L21/24 , H01L21/761 , Y10S148/085 , Y10S148/107 , Y10S148/115 , Y10S148/166
摘要： An isolation grid is produced by the migration of metal-rich liquid zone of material through a body of semiconductor material. Planar orientation of the surface through which migration is initiated, directions of wire alignment in the surface, wire sizes, direction of wire migration and simultaneous migration of intersecting liquid wires are disclosed herein. P-N junctions of the grid produced behind the migrated wires have ideal voltage breakdown characteristics.
摘要翻译：通过半导体材料体的迁移富含金属的液体区域产生隔离栅。本文公开了通过其开始迁移的表面的平面取向，表面中的线对准的方向，线尺寸，线移动的方向和相交的液体线的同时迁移。迁移后的电线产生的电网的P-N结具有理想的电压击穿特性。

5. 发明授权

US3429818A Method of growing crystals 失效
标题翻译：生长晶体的方法
公开(公告)号：US3429818A
公开(公告)日：1969-02-25
申请号：US3429818D
申请日：1965-02-12
申请人： TYCO LABORATORIES INC
发明人： BENEDETTO BERNARD A DI , MLAVSKY ABRAHAM I
IPC分类号： C30B19/02 , C30B19/04 , B01J17/14 , B01D9/00
CPC分类号： C30B29/44 , C30B19/02 , C30B19/04 , C30B29/28 , C30B29/32 , C30B29/40 , C30B29/42 , Y10S148/107 , Y10S148/166

6. 发明授权

US3956023A Process for making a deep power diode by thermal migration of dopant 失效
标题翻译：通过掺杂剂的热迁移制造深度功率二极管的工艺
公开(公告)号：US3956023A
公开(公告)日：1976-05-11
申请号：US519249
申请日：1974-10-30
申请人： Harvey E. Cline , Thomas R. Anthony
发明人： Harvey E. Cline , Thomas R. Anthony
IPC分类号： H01L21/18 , H01L21/24 , H01L29/00 , H01L7/36
CPC分类号： H01L21/24 , H01L21/185 , H01L29/00 , Y10S148/107 , Y10S148/166
摘要： A semiconductor diode comprises a first body of semiconductor material having a selected resistivity and a first type conductivity and a region of second type conductivity and a selected resistivity. The second body consists of recrystallized semiconductor material of a layer thereof having solid solubility of a dopant therein and has the same crystallographic structure as the first body. The second region is formed by a temperature gradient zone melting process embodying the migration of a metal-enriched melt of semiconductor material through the second body of semiconductor material. Preferably, the metal-enriched melt is no greater than approximately 20 microns in thickness. The second body initially has a axial crystallographic orientation when it is a wafer. However, the second body initially may be polycrystalline semiconductor material.
摘要翻译：半导体二极管包括具有选定电阻率和第一类型导电性的第一半导体材料体和第二类型导电性区域和所选择的电阻率。第二体由其中具有固体溶解度的层的再结晶半导体材料组成，并具有与第一主体相同的晶体结构。第二区域是通过体现半导体材料的金属富集的熔体通过半导体材料的第二体的迁移的温度梯度区熔融过程形成的。优选地，金属富集的熔体的厚度不大于约20微米。当它是晶片时，第二主体最初具有<111>轴向晶体取向。然而，第二主体最初可以是多晶半导体材料。

7. 发明授权

US3573190A Apparatus for depositing semiconductor material and forming semiconductor junctions 失效
标题翻译：沉积半导体材料和形成半导体结的装置
公开(公告)号：US3573190A
公开(公告)日：1971-03-30
申请号：US3573190D
申请日：1968-10-31
申请人： TRW INC
发明人： BLOOM MURRAY
IPC分类号： C23C14/35 , H01L21/00 , C23C15/00
CPC分类号： C23C14/35 , H01L21/00 , Y10S117/912 , Y10S148/049 , Y10S148/107 , Y10S148/152 , Y10S148/158 , Y10S148/166 , Y10S148/169 , Y10S148/17
摘要： THERE IS DISCLOSED AN APPARATUS FOR SPUTTER DEPOSITING A LAYER OF SEMICONDUCTOR MATERIAL FROM A CATHODE ONTO A SEMICONDUCTOR SUBSTRATE THROUGH A MOLTEN METAL ALLOY LAYER ON THE SUBSTRATE. MEANS ARE PROVIDED TO SENSE THE TEMPERATURE OF THE SUBSTRATE IN ORDER TO CONTROL MEANS FOR SHIELDING THE ALLOY LAYER UNTIL THE SUBSTRATE REACHES A TEMPERATURE SUCH THAT THE SURFACE OF THE SUBSTRATE ITSELF IS SLIGHTLY BELOW THE MELTING POINT OF THE MATERIAL TO BE DEPOSITED WHEREAS THE SURFACE OF THE MOLTEN LAYER IS MAINTAINED BY THE SPUTTERING APPARATUS AT A TEMPERATURE WHICH IS ABOVE THE MELTING POINT OF THE MATERIAL TO BE SPUTTER DEPOSITED. THE APPARATUS THUS ASSURES THAT THE SPUTTERED MATERIAL WILL DISSOLVE INTO THE ALLOY AT ITS HIGH TEMPERATURE SURFACE AND CRYSTALLIZE ONTO THE SURFACE OF THE SUBSTRATE.

8. 发明授权

US3290568A Solid state, thin film triode with a graded energy band gap 失效
标题翻译：固态，薄膜三极管具有分级能带隙
公开(公告)号：US3290568A
公开(公告)日：1966-12-06
申请号：US28724863
申请日：1963-06-12
申请人： PHILCO CORP
发明人： HERSHINGER LINCOLN W
IPC分类号： H01L27/00 , H01L29/00 , H01L29/22 , H01L45/00
CPC分类号： H01L29/22 , H01L27/00 , H01L29/00 , H01L29/2203 , H01L45/00 , Y10S148/017 , Y10S148/064 , Y10S148/067 , Y10S148/107 , Y10S148/158 , Y10S148/166 , Y10S148/169

9. 发明授权

US2998334A Method of making transistors 失效
标题翻译：制造晶体管的方法
公开(公告)号：US2998334A
公开(公告)日：1961-08-29
申请号：US71978358
申请日：1958-03-07
申请人： TRANSITRON ELECTRONIC CORP
发明人： DAVID BAKALAR , DAVID NAVON
IPC分类号： H01L21/18 , H01L21/228 , H01L21/24
CPC分类号： H01L21/24 , H01L21/185 , H01L21/228 , Y10S148/107 , Y10S148/151 , Y10S148/166

10. 发明授权

US3920568A Synthetic ester lubricant compositions with improved ryder gear load-carrying ability 失效
标题翻译：合成酯润滑剂组合物具有改进的莱德齿轮承载能力
公开(公告)号：US3920568A
公开(公告)日：1975-11-18
申请号：US24774272
申请日：1972-04-26
申请人： EXXON RESEARCH ENGINEERING CO
发明人： SHAUB HAROLD , GARBUS ADOLPH J
IPC分类号： C10M169/00 , C10M3/18 , C10M3/26
CPC分类号： C10M3/00 , C10M2207/282 , C10M2207/283 , C10M2207/289 , C10M2207/30 , C10M2207/302 , C10M2207/304 , C10M2207/34 , C10M2209/084 , C10M2209/104 , C10M2209/105 , C10M2209/11 , C10M2209/111 , C10M2209/112 , C10M2215/04 , C10M2215/26 , C10M2219/044 , C10M2219/108 , C10M2223/04 , C10M2223/041 , C10M2223/042 , C10M2223/10 , C10N2230/08 , C10N2240/12 , C10N2240/121 , C10N2250/10 , Y10S148/166
摘要： A lubricant composition comprised of a major amount of a synthetic ester oil having an inherent Ryder gear load-carrying ability of less than 2200 pounds per inch and a minor, loadcarrying improving amount of a mono-, di- or trihydrocarbyl ammonium salt of an organic carboxylic acid exhibits improved Ryder gear load-carrying ability.
摘要翻译：一种润滑剂组合物，其由主要量的合成酯油组成，其具有小于2200磅/英寸的固有的莱德齿轮负载能力和少量负载改进量的单，二或三烃基铵盐有机羧酸表现出改善的莱德齿轮承载能力。

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