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1. 发明公开

EP0277415A3 Semiconductor device comprising an insulating structure and manufacturing process thereof 失效
标题翻译：包含绝缘结构的半导体器件及其制造工艺
公开(公告)号：EP0277415A3
公开(公告)日：1989-03-08
申请号：EP87309856.0
申请日：1987-11-06
申请人： CANON KABUSHIKI KAISHA
发明人： Arikawa, Shiro , Yonehara, Takao
IPC分类号： H01L21/20 , H01L21/76
CPC分类号： H01L21/02381 , H01L21/0237 , H01L21/0242 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645 , H01L21/761 , H01L21/762 , Y10S117/913 , Y10S148/15 , Y10S148/152 , Y10S257/928
摘要： Semiconductor article and preparation thereof is provided a semiconductor article together with a process for producing the same which article has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate, at least said semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of said insualtor substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.

2. 发明公开

EP0285358A3 Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same 失效
标题翻译：使用由其获得的化合物半导体制造化合物半导体和半导体器件的方法
公开(公告)号：EP0285358A3
公开(公告)日：1988-10-12
申请号：EP88302748
申请日：1988-03-28
申请人： CANON KABUSHIKI KAISHA
发明人： Tokunaga, Hiroyuki , Yamagata, Kenji , Yonehara, Takao
IPC分类号： H01L21/20 , C30B23/04 , C30B25/04 , H01L21/365 , H01L21/36
CPC分类号： C30B23/04 , C30B25/04 , H01L21/0242 , H01L21/02422 , H01L21/02538 , H01L21/02551 , H01L21/0256 , H01L21/02573 , H01L21/0262 , H01L21/02639 , H01L21/02647 , Y10S148/152 , Y10S438/925
摘要： A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), by exposing the substrate to either of the gas phases:
(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow from said single nucleus,
characterized in that
a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type and a starting material (Dp) for feeding a dopant for controlling to the electroconduction type opposite to said electrcondition type with change-over to one another into said gas phase, during said crystal forming treatment.

3. 发明专利

JPS61121433A Semiconductor substrate 失效
标题翻译：半导体基板
公开(公告)号：JPS61121433A
公开(公告)日：1986-06-09
申请号：JP24427784
申请日：1984-11-19
申请人： Sharp Corp
发明人： KAKIHARA YOSHINOBU
IPC分类号： H01L27/00 , H01L21/20 , H01L21/205 , H01L21/762 , H01L21/84
CPC分类号： H01L21/02381 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/76294 , Y10S148/011 , Y10S148/025 , Y10S148/071 , Y10S148/09 , Y10S148/152 , Y10S438/967
摘要： PURPOSE: To form a semiconductor substrate for a semiconductor device with high density, high intergration and high speed performance by laminating sequentially both the second insulating film with plural openings opened by a predetermined pattern and the second single crystal semiconductor layer grown epitaxially with a seed crystal method on a surface of the single crystal semiconductor layer.
CONSTITUTION: As a single crystal silicon semiconductor (N) layer 5 is epitaxially grown all over a surface of an insulating layer 4 having two openings 13 and 14 opened by a predetermined pattern, the semiconductor (N) layer 5 can take over a crystalline of a semiconductor (N
+ ) layer 3, and therefore, a semiconductor substrate of an extremely good crystalline can be obtained. In case that the insualting layer 4 is an amorphous oxide film, though a single crystal silicon semiconductor layer formed on it turns in-to a polysilicon, as this single crystal silicon semiconductor 5 is supposed to take over a crystalline of the semiconductor (N
+ ) layer 3 from a horizontal direction, a single (N
+ ) layer 3 from a horizontal direction, a single crystalization is made and a condi tion improving the crystalline can be obtained.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过依次层叠第二绝缘膜和通过预定图案打开的多个开口来形成具有高密度，高集成和高速性能的半导体器件的半导体衬底，并且用晶种外延生长的第二单晶半导体层方法在单晶半导体层的表面上。构成：由于在具有以预定图案打开的两个开口13和14的绝缘层4的整个表面上外延生长单晶硅半导体（N）层5，所以半导体（N）层5可以接管半导体（N +）层3，因此，可以获得非常好的晶体的半导体衬底。在绝缘层4是非晶氧化物膜的情况下，尽管形成在其上的单晶硅半导体层变成多晶硅，但是由于该单晶硅半导体5应该接管半导体的晶体（N < +>）层3，从水平方向单个（N +）层3，进行单晶化，并且可以获得改善晶体的条件。

4. 发明专利

JP3545470B2 Manufacturing method of a semiconductor integrated circuit device 失效
公开(公告)号：JP3545470B2
公开(公告)日：2004-07-21
申请号：JP29823394
申请日：1994-12-01
申请人：株式会社ルネサステクノロジ
发明人：俊内野 , 智志山本 , 尚橋本 , 隆宏熊内 , 洋一玉置 , 修笠原 , 健夫芝
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L21/8249 , H01L27/06 , H01L29/165 , H01L29/732 , H01L29/737
CPC分类号： H01L21/8249 , Y10S148/152

5. 发明公开

EP0260955A3 Photoelectric converter 失效
标题翻译：光电转换器
公开(公告)号：EP0260955A3
公开(公告)日：1989-06-14
申请号：EP87308200.2
申请日：1987-09-16
申请人： CANON KABUSHIKI KAISHA
发明人： Arikawa, Shiro , Yonehara, Takao
IPC分类号： H01L31/10 , H01L31/18
CPC分类号： H01L31/02164 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L31/1105 , H01L31/1136 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S148/152
摘要： A photoelectric converter comprises a semiconductor transistor having a main electrode region of one conductivity type semiconductor and a control electrode region of an opposite conductivity type semiconductor, and a capacitor for controlling a potential of the floating control electorde region. Carriers generated by a light are stored in the control electrode region by controlling the potential of the control electrode area through the capacitor. The stored voltage is read and stored carriers are refreshed. On an unnucleation surface (S NDS ) of said light transmissive substrate, a nucleation surface (S NDL ) of a heterogeneous material having a sufficiently higher nucleation density than that of the material of unnucleation surface and a sufficiently small area to permit growth of single nuclear of the deposite surface is formed. A single crystal region is grown around the single nuclear formed in the nucleation surface (S NDL ). And a photoelectric conversion cell is formed is the single crystal region.

6. 发明公开

EP0260955A2 Photoelectric converter 失效
标题翻译：光电转换器
公开(公告)号：EP0260955A2
公开(公告)日：1988-03-23
申请号：EP87308200.2
申请日：1987-09-16
申请人： CANON KABUSHIKI KAISHA
发明人： Arikawa, Shiro , Yonehara, Takao
IPC分类号： H01L31/10 , H01L31/18
CPC分类号： H01L31/02164 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L31/1105 , H01L31/1136 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S148/152
摘要： A photoelectric converter comprises a semiconductor transistor having a main electrode region of one conductivity type semiconductor and a control electrode region of an opposite conductivity type semiconductor, and a capacitor for controlling a potential of the floating control electorde region. Carriers generated by a light are stored in the control electrode region by controlling the potential of the control electrode area through the capacitor. The stored voltage is read and stored carriers are refreshed.
On an unnucleation surface (S NDS ) of said light transmissive substrate, a nucleation surface (S NDL ) of a heterogeneous material having a sufficiently higher nucleation density than that of the material of unnucleation surface and a sufficiently small area to permit growth of single nuclear of the deposite surface is formed. A single crystal region is grown around the single nuclear formed in the nucleation surface (S NDL ). And a photoelectric conversion cell is formed is the single crystal region.
摘要翻译：光电转换器包括具有一种导电类型半导体的主电极区域和相反导电类型半导体的控制电极区域的半导体晶体管以及用于控制浮动控制电子区域的电势的电容器。通过电容器控制控制电极区域的电位，由光产生的载流子被存储在控制电极区域中。存储的电压被读取并且存储的载波被刷新。在所述透光衬底的非核化表面（SNDS）上，非均匀材料的成核表面（SNDL）具有比非成核表面的材料高得多的成核密度和足够小的面积以允许沉积表面形成。在成核表面（SNDL）中形成的单个核周围生长单晶区。并且，光电转换单元形成为单晶区域。

7. 发明公开

EP0182651A2 Semiconductor substrate 失效
标题翻译：半导体衬底。
公开(公告)号：EP0182651A2
公开(公告)日：1986-05-28
申请号：EP85308416.8
申请日：1985-11-19
申请人： SHARP KABUSHIKI KAISHA
发明人： Kakihara, Yoshinobu
IPC分类号： H01L21/76 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/76294 , Y10S148/011 , Y10S148/025 , Y10S148/071 , Y10S148/09 , Y10S148/152 , Y10S438/967
摘要： A semiconductor substrate includes: a first monocrystalline semiconductive layer formed on the surface of a crystalline silicon substrate with the intervension of a first insulation film; a second insulation film set to the upper surface of the first monocrystalline semiconductive layer and provided with a plurality of apertures each having a specific pattern; and a second monocrystalline semiconductive layer which is epitaxially grown by the seed crystallization process and provided with the same crystalline characteristics as that of the first monocrystalline semiconductive layer.
Accordingly, the preferred embodiment of the present invention provides an extremely useful semiconductor substrate which easily isolates the elements of semiconductor devices between layers of insulating film described above.

8. 发明授权

US5238879A Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells 失效
标题翻译：用于生产具有用于诸如太阳能电池的薄膜半导体部件的颗粒状晶体结构的多晶层的方法
公开(公告)号：US5238879A
公开(公告)日：1993-08-24
申请号：US758502
申请日：1991-09-06
申请人： Rolf Plaettner
发明人： Rolf Plaettner
IPC分类号： H01L21/20 , H01L31/18
CPC分类号： H01L31/186 , H01L21/2022 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10S148/122 , Y10S148/152 , Y10S148/154 , Y10S438/974
摘要： A method for producing polycrystalline layers having granular crystalline structure is provided. Pursuant to the method, a thin intermediate layer of amorphous is deposited before the deposition of the polycrystalline layer in order to avoid crystal structure influence proceeding from the substrate. The layer is then recrystallized applying a pattern of crystallization points or the amorphous layer. A detrimental effect of the fine-crystalline structure of the substrate is prevented by the amorphous intermediate layer. Pursuant to the present invention, the thin-film technology can also be utilized for polycrystalline silicon layers, this being especially desirable in the manufacture of solar cells.
摘要翻译：提供一种具有粒状结晶结构的多晶层的制造方法。根据该方法，在沉积多晶层之前沉积薄的非晶形中间层，以避免从衬底进行的晶体结构影响。然后将层重结晶施加结晶点或非晶层的图案。通过无定形中间层防止衬底的细晶结构的有害影响。根据本发明，薄膜技术也可以用于多晶硅层，这在太阳能电池的制造中是特别需要的。

9. 发明授权

US4977096A Method of making a photosensor using selective epitaxial growth 失效
标题翻译：使用选择性外延生长制造光电传感器的方法
公开(公告)号：US4977096A
公开(公告)日：1990-12-11
申请号：US356882
申请日：1989-05-25
申请人： Tetsuya Shimada , Satoshi Itabashi , Katsunori Hatanaka
发明人： Tetsuya Shimada , Satoshi Itabashi , Katsunori Hatanaka
IPC分类号： H01L21/20 , H01L27/146 , H04N1/401
CPC分类号： H04N1/401 , H01L21/0242 , H01L21/02532 , H01L21/02557 , H01L21/0256 , H01L21/0262 , H01L21/02639 , H01L27/14665 , H01L27/14681 , Y10S148/014 , Y10S148/097 , Y10S148/152
摘要： An image photodetector includes a photosensor unit, a charge storage unit, and a switch unit, all of them are formed on a single-crystal semiconductor film grown from a single nucleus such that crystal formation is performed on a substrate having a free surface including a non-nucleus formation surface and a nucleus formation surface adjacent thereto. The non-nucleus formation surface has a low nucleation density. The nucleus formation surface has a sufficiently small area to allow growth of only the single nucleus and has a higher nucleation density that that of the non-nucleus formation surface.

10. 发明授权

US4902642A Epitaxial process for silicon on insulator structure 失效
标题翻译：硅绝缘体结构的外延工艺
公开(公告)号：US4902642A
公开(公告)日：1990-02-20
申请号：US238974
申请日：1988-08-24
申请人： Bor-Yen Mao , Richard L. Yeakley
发明人： Bor-Yen Mao , Richard L. Yeakley
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/02661 , Y10S148/071 , Y10S148/152 , Y10S148/154
摘要： The present invention provides products and methods of forming an epitaxial silicon layer on an implanted buried insulator silicon on insulator structure (10). A silicon film (16) is pre-treated to remove residual oxide and surface damage layers, but in such a way as to not damage the silicon film (16) or insulating layer (14) below the silicon film (16). A layer of amorphous silicon (18) is formed on the silicon film (16) in processes to avoid formation of polycrystalline silicon, and also to avoid damage to the silicon film (16). The layer of amorphous silicon (18) is annealed to form an epitaxial layer of single crystalline silicon (20).
摘要翻译：本发明提供了在注入的绝缘体上绝缘体上的结构（10）上形成外延硅层的产品和方法。硅膜（16）被预处理以除去残余的氧化物和表面损伤层，但是以不破坏硅膜（16）下面的硅膜（16）或绝缘层（14）的方式。在硅膜（16）上形成一层非晶硅（18），以避免形成多晶硅，并避免损坏硅膜（16）。将非晶硅层（18）退火以形成单晶硅外延层（20）。

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