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1. 发明申请

WO1997011212A1 SEED CRYSTALS FOR MELT PROCESSING SUPERCONDUCTORS 审中-公开
标题翻译：用于熔融加工超导体的晶体
公开(公告)号：WO1997011212A1
公开(公告)日：1997-03-27
申请号：PCT/US1996014466
申请日：1996-09-10
申请人： THE UNIVERSITY OF CHICAGO
发明人： THE UNIVERSITY OF CHICAGO , VEAL, Boyd, W. , PAULIKAS, Arvydas , BALACHANDRAN, Uthamalingan , ZHONG, Wei
IPC分类号： C30B15/14
CPC分类号： C30B29/225 , C30B9/00 , Y10S117/912
摘要： A method of fabricating bulk superconducting material including RBa2Cu3Ox comprising heating compressed powder oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa2Cu3Ox in physical contact with an oxide single crystal seed to a temperature sufficient to form a liquid phase in the RBa2Cu3Ox while maintaining the single crystal seed solid to grow the superconducting material and thereafter cooling to provide a material including RBa2Cu3Ox. R is Y or La and the single crystal seed has a lattice mismatch with RBa2Cu3Ox of less than about 2 % at the growth temperature. The starting material may be such that the final product contains a minor amount of R2BaCuO5.
摘要翻译：一种制造包括RBa 2 Cu 3 O x的块状超导材料的方法，包括加热摩尔比R和Ba和Cu的压缩粉末氧化物和/或碳酸盐，以形成与氧化物单晶种子物理接触的RBa2CuO3Ox至足以形成液相的温度同时保持单晶种子固体以生长超导材料，然后冷却以提供包括RBa 2 Cu 3 O x的材料。 R是Y或La，单晶种子在生长温度下与RBa2Cu3Ox的晶格失配小于约2％。起始材料可以使得最终产品含有少量的R2BaCuO5。

2. 发明申请

WO87007655A1 PROCESS FOR PREPARING SINGLE CRYSTAL BINARY METAL OXIDES OF IMPROVED PURITY 审中-公开
标题翻译：制备改善纯度的单晶二次金属氧化物的方法
公开(公告)号：WO87007655A1
公开(公告)日：1987-12-17
申请号：PCT/US1987000854
申请日：1987-12-17
IPC分类号： C30B15/00 , C30B29/30 , C30B29/32
CPC分类号： C30B15/00 , C30B29/30 , C30B29/32 , Y10S117/906 , Y10S117/912
摘要： A method for the growth of single crystals of a binary metal oxides of the formula ABO3 where A is an alkali or alkaline earth metal, B is at least one element selected from titanium, niobium and tantalum. A mixture comprising the constituent components of the ABO3 crystal is prepared using a basic oxide or carbonate of A and a stoichiometric excess of an acidic oxide of B. The mixture is heated at an elevated temperature to form a melt and is thereafter exposed to a reactive atmosphere comprised of a mixture of gaseous carbon monoxide and carbon dioxide. Crystal growth from the melt is effected by a top-seeded crystal pulling technique.
摘要翻译：生成式ABO3的二元金属氧化物的单晶的方法，其中A是碱金属或碱土金属，B是选自钛，铌和钽中的至少一种元素。使用A的碱性氧化物或碳酸酯和B的化学计量过量的酸性氧化物制备包含ABO 3晶体的组成成分的混合物。将混合物在升高的温度下加热以形成熔体，然后暴露于反应性由气态一氧化碳和二氧化碳的混合物组成的气氛。来自熔体的晶体生长通过顶部种子晶体拉伸技术实现。

3. 发明申请

WO1992018671A1 PROCESS FOR GROWING CRYSTALS 审中-公开
标题翻译：生长晶体的方法
公开(公告)号：WO1992018671A1
公开(公告)日：1992-10-29
申请号：PCT/US1992003258
申请日：1992-04-22
申请人： VISTA CHEMICAL COMPANY
发明人： VISTA CHEMICAL COMPANY , BARCLAY, David, A. , LEWIS, Duane, J. , DECKER, Lewis, Bernard, Jr. , CARRADINE, William, R.
IPC分类号： C30B07/00
CPC分类号： B82Y30/00 , C01F7/02 , C01P2002/70 , C01P2004/64 , C01P2006/12 , C30B7/00 , C30B29/16 , C30B29/20 , Y10S117/912
摘要： A process for growing crystals at an enhanced rate comprising providing a dispersion of a fluid medium and seed crystals of a metal oxide, introducing feed material comprising a metal oxide into the dispersion and maintaining a uniform mixture of the seed crystals, the feed material and the fluid medium, the feed material having an average crystal size less than the average crystal size of the seed crystals, the feed material being added in an amount and at a rate whereby the seed crystals grow, the feed material providing a soluble nutrient species for deposition of the said crystal to effect crystal growth, the mixture of seed crystals and feed material being treated under conditions which stimulate crystal growth for a period of time sufficient to obtain a desired quantity of a product comprising at least one grown crystal having an average crystal size greater than the average crystal size of the seed crystal.
摘要翻译：一种以增强的速率生长晶体的方法，包括提供流体介质的分散体和金属氧化物的晶种，将包含金属氧化物的进料输入到分散体中并保持晶种，进料和流体介质，所述进料材料的平均晶体尺寸小于所述晶种的平均晶体尺寸，所述进料以加入量和所述晶种生长的速率加入，所述进料提供用于沉积的可溶性营养物种的所述晶体以实现晶体生长，在刺激晶体生长的条件下处理晶种和原料的混合物足以获得所需量的包含至少一种具有平均晶体尺寸的生长晶体的产物的时间大于晶种的平均晶体尺寸。

4. 发明公开

EP0267941A1 PROCESS FOR PREPARING SINGLE CRYSTAL BINARY METAL OXIDES OF IMPROVED PURITY 失效
标题翻译：用于生产单晶二进制金属氧化物。
公开(公告)号：EP0267941A1
公开(公告)日：1988-05-25
申请号：EP87903492.0
申请日：1987-04-16
申请人： HUGHES AIRCRAFT COMPANY
发明人： PASTOR, Ricardo, C. , GORRE, Luisa, E.
IPC分类号： C30B15 , C30B29
CPC分类号： C30B15/00 , C30B29/30 , C30B29/32 , Y10S117/906 , Y10S117/912
摘要： A method is disclosed for the growth of single crystals of a binary metal oxides of the formula ABO3 where A is an alkali or alkaline earth metal, B is at least one element selected from titanium, niobium and tantalum. A mixture comprising the constituent components of the ABO3 crystal is prepared using a basic oxide or carbonate of A and a stoichiometric excess of an acidic oxide of B. The mixture is heated at an elevated temperature to form a melt and is thereafter exposed to a reactive atmosphere of a mixture of gaseous carbon monoxide and carbon dioxide. Crystal growth from the melt is effected by a top-seeded crystal pulling technique.

5. 发明专利

JPS58190895A Liquid phase epitaxial growth method 失效
标题翻译：液相外延生长法
公开(公告)号：JPS58190895A
公开(公告)日：1983-11-07
申请号：JP7244282
申请日：1982-04-28
申请人： Fujitsu Ltd
发明人： ISOZUMI SHIYOUJI , KUSUKI TOSHIHIRO
IPC分类号： C30B19/00 , C30B19/04 , C30B19/12 , H01L21/208
CPC分类号： C30B19/04 , C30B19/12 , C30B29/40 , Y10S117/912
摘要： PURPOSE: To obtain excellent uniformity with mixed crystals as well, by effecting epitaxial growth while realizing a supercooled state without giving any difference in time and space to the temp. of a soln., etc.
CONSTITUTION: Two recesses 3, 4 are provided in the stationary part 1 of a sliding type carbon boat and a hole 5 is provided to a slider 2. A crystal 6 of a GaAs substrate having a Miller index (100) is stored in the recess 3 and a crystal 7 of a GaP solute source having a Miller index (111) is stored in the recess 4 with the (111) facets B faced upward. On the other hand, if an unsatd. In soln. 8 of P is stored in the hole 5 of the slider 2 and the slider is slid to conduct the melt 8 over the crystal 7, the crystal 7 dissolves in the soln. 8, thereby forming an In-Ga-P three-element soln. 8'. If the melt 8' is further conducted over the crystal 6 by sliding the slider 2, mixed crystal of In
1-x Ca
x P is grown on the substrate 6.
COPYRIGHT: (C)1983,JPO&Japio
摘要翻译：目的：为了通过混合晶体获得优异的均匀性，通过在实现过冷状态的同时实现外延生长，而不会在时间和空间上产生任何差异。溶剂等。构成：在滑动型碳舟的固定部分1中设置两个凹部3,4，并且向滑块2提供孔5。一种具有米勒指数的GaAs衬底的晶体6（ 100）存储在凹部3中，并且具有米勒指数（111）的GaP溶质源的晶体7存储在凹部4中，（111）刻面B朝上。另一方面，如果不满足在soln 8的P被存储在滑块2的孔5中，并且滑块滑动以将熔体8导引在晶体7上，晶体7溶解在溶胶中。从而形成In-Ga-P三元素溶液。 8'。如果熔融物8'通过滑动滑块2进一步传导到晶体6上，则In1-xCaxP的混合晶体生长在基板6上。

6. 发明专利

JP2004323348A Method for manufacturing silicon carbide single crystal 有权
公开(公告)号：JP2004323348A
公开(公告)日：2004-11-18
申请号：JP2004114626
申请日：2004-04-08
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： GUNJISHIMA TSUKURU , NAKAMURA DAISUKE , SUGIYAMA NAOHIRO , HIROSE FUSAO
IPC分类号： C30B29/38 , C30B1/00 , C30B23/00 , C30B29/36
CPC分类号： C30B29/36 , C30B23/00 , Y10S117/902 , Y10S117/912
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal almost free from spiral dislocations and from mixing of a different polymorphic crystal and a different orientation crystal. SOLUTION: The method for manufacturing the silicon carbide single crystal 10 comprises growing a bulky silicon carbide single crystal 10 on a growth surface of a dislocation controlling seed crystal 1. In the method, the dislocation controlling seed crystal 1 having an area 15 for allowing the spiral dislocations 19 to occur in a density higher than its periphery is prepared (seed crystal preparing process). Then, the silicon carbide single crystal 10 is grown on the dislocation controlling seed crystal 1 (growth process). In the growth process, the silicon carbide single crystal 10 is grown so that it has a flat c-plane facet 105 on the surface 103, and the c-plane facet 105 and the area formed by projecting the area 15 for allowing the spiral dislocations 19 to occur in the c-axis direction or in the direction vertical to the growth surface on the surface 103 are superposed during growing of the crystal. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP3764462B2 The method of producing a silicon carbide single crystal 有权
公开(公告)号：JP3764462B2
公开(公告)日：2006-04-05
申请号：JP2004114626
申请日：2004-04-08
申请人：株式会社デンソー , 株式会社豊田中央研究所
发明人：大輔中村 , 富佐雄廣瀬 , 尚宏杉山 , 造郡司島
IPC分类号： C30B29/36 , C30B29/38 , C30B1/00 , C30B23/00
CPC分类号： C30B29/36 , C30B23/00 , Y10S117/902 , Y10S117/912

8. 发明授权

US5611854A Seed crystals with improved properties for melt processing superconductors for practical applications 失效
标题翻译：用于实际应用的熔体加工超导体性能改善的晶种
公开(公告)号：US5611854A
公开(公告)日：1997-03-18
申请号：US531399
申请日：1995-09-21
申请人： Boyd W. Veal , Arvydas Paulikas , Uthamalingam Balachandran , Wei Zhong
发明人： Boyd W. Veal , Arvydas Paulikas , Uthamalingam Balachandran , Wei Zhong
IPC分类号： C30B9/00 , C30B11/04
CPC分类号： C30B29/225 , C30B9/00 , Y10S117/912
摘要： A method of fabricating bulk superconducting material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta. comprising heating compressed powder oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta. in physical contact with an oxide single crystal seed to a temperature sufficient to form a liquid phase in the RBa.sub.2 Cu.sub.3 O.sub.7-.delta. while maintaining the single crystal seed solid to grow the superconducting material and thereafter cooling to provide a material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta.. R is a rare earth or Y or La and the single crystal seed has a lattice mismatch with RBa.sub.2 Cu.sub.3 O.sub.7-.delta. of less than about 2% at the growth temperature. The starting material may be such that the final product contains a minor amount of R.sub.2 BaCuO.sub.5.
摘要翻译：一种制造包括RBa 2 Cu 3 O 7-δ的块状超导材料的方法，包括加热摩尔比R和Ba和Cu的压缩粉末氧化物和/或碳酸盐，以形成与氧化物单晶种子物理接触的RBa2Cu3O7-δ至足以形成的温度在RBa2Cu3O7-δ中的液相，同时保持单晶种子固体生长超导材料，然后冷却以提供包括RBa 2 Cu 3 O 7-δ的材料。 R是稀土或Y或La，单晶种子在生长温度下与RBa2Cu3O7-δ晶格失配小于约2％。起始材料可以使得最终产品含有少量的R2BaCuO5。

9. 发明授权

US5055157A Method of crystal ribbon growth 失效
标题翻译：晶体带生长方法
公开(公告)号：US5055157A
公开(公告)日：1991-10-08
申请号：US475395
申请日：1990-02-05
申请人： Carl E. Bleil
发明人： Carl E. Bleil
IPC分类号： C30B13/00 , C30B13/18 , C30B29/64
CPC分类号： C30B29/06 , C30B13/18 , Y10S117/912 , Y10T117/1048 , Y10T117/1068
摘要： Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.
摘要翻译：晶体通过用于支撑源材料的膜，与膜接触的电容电极和与电极热接触的热管的装置生长成带状，用于首先将材料通过电极加热至接近其熔融温度，然后可控地冷却电极，使用用于熔化区域中的膜的电极的rf加热器，用于使熔融区域的一个表面固化以形成带状物的热管，用于使熔融区域移动的拉动机构，用于熔化的加热器用于补充熔体的大量补充材料和用于在离开区域之后加热带的辅助加热装置，以通过保持低的轴向温度梯度来防止树突生长。

10. 发明授权

US4498937A Liquid phase epitaxial growth method 失效
标题翻译：液相外延生长法
公开(公告)号：US4498937A
公开(公告)日：1985-02-12
申请号：US489348
申请日：1983-04-28
申请人： Shoji Isozumi , Toshihiro Kusunoki
发明人： Shoji Isozumi , Toshihiro Kusunoki
IPC分类号： C30B19/00 , C30B19/04 , C30B19/12 , H01L21/208
CPC分类号： C30B19/04 , C30B19/12 , C30B29/40 , Y10S117/912
摘要： During liquid phase epitaxial growth of a compound semiconductor layer on a substrate, an unsaturated solution is brought into contact with a solute source crystalline plate. The plate dissolves into the solution, which creates a supercooling condition in the solution without a decrease in the temperature of the solution. The crystalline plate has a denser crystal face than that of the substrate, and/or the lattice constant of the crystalline plate is considerably different from that of the substrate.
摘要翻译：在基板上的化合物半导体层的液相外延生长期间，使不饱和溶液与溶质源晶体板接触。板溶解在溶液中，这在溶液中产生过冷却状态，而不降低溶液的温度。结晶板具有比衬底更密的晶面，和/或晶片的晶格常数与衬底的晶格常数有很大不同。

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