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    • 10. 发明授权
    • Process for making a deep power diode by thermal migration of dopant
    • 通过掺杂剂的热迁移制造深度功率二极管的工艺
    • US3956023A
    • 1976-05-11
    • US519249
    • 1974-10-30
    • Harvey E. ClineThomas R. Anthony
    • Harvey E. ClineThomas R. Anthony
    • H01L21/18H01L21/24H01L29/00H01L7/36
    • H01L21/24H01L21/185H01L29/00Y10S148/107Y10S148/166
    • A semiconductor diode comprises a first body of semiconductor material having a selected resistivity and a first type conductivity and a region of second type conductivity and a selected resistivity. The second body consists of recrystallized semiconductor material of a layer thereof having solid solubility of a dopant therein and has the same crystallographic structure as the first body. The second region is formed by a temperature gradient zone melting process embodying the migration of a metal-enriched melt of semiconductor material through the second body of semiconductor material. Preferably, the metal-enriched melt is no greater than approximately 20 microns in thickness. The second body initially has a axial crystallographic orientation when it is a wafer. However, the second body initially may be polycrystalline semiconductor material.
    • 半导体二极管包括具有选定电阻率和第一类型导电性的第一半导体材料体和第二类型导电性区域和所选择的电阻率。 第二体由其中具有固体溶解度的层的再结晶半导体材料组成,并具有与第一主体相同的晶体结构。 第二区域是通过体现半导体材料的金属富集的熔体通过半导体材料的第二体的迁移的温度梯度区熔融过程形成的。 优选地,金属富集的熔体的厚度不大于约20微米。 当它是晶片时,第二主体最初具有<111>轴向晶体取向。 然而,第二主体最初可以是多晶半导体材料。