专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5368031A Magnetic resonance surgery using heat waves produced with a laser fiber 失效
标题翻译：使用激光光纤产生的热波进行磁共振手术
公开(公告)号：US5368031A
公开(公告)日：1994-11-29
申请号：US125520
申请日：1993-09-24
申请人： Harvey E. Cline , Thomas R. Anthony
发明人： Harvey E. Cline , Thomas R. Anthony
IPC分类号： A61B17/00 , A61B18/22 , A61B19/00 , A61N7/02 , G01R33/48 , G01R33/561 , G01R33/563 , A61B5/055
CPC分类号： G01R33/4804 , A61B18/22 , A61N7/02 , A61B2017/00154 , A61B2090/374 , G01R33/561 , G01R33/56341
摘要： Surgery is performed with pulsed heat means that selectively destroys tissue in a region within a patient. The size of the region destroyed is dependent upon the frequency of the pulses of the pulsed heat means and thermal conductivity of the tissue of the patient. The pulsed heat means can be a coherent optical source that is guided by laser fiber to the tissue to be destroyed. In another embodiment the pulsed heat means is a focussed ultrasound transducer that dissipates ultrasonic energy at a focal point within the region of tissue to be destroyed. A magnetic resonance imaging system employing a temperature sensitive pulse sequence creates an image of the tissue and the region being heated to allow a surgeon to alter the position of the pulsed heat means or vary the pulse frequency.
摘要翻译：使用脉冲加热手段进行手术，其选择性地破坏患者内的区域中的组织。破坏的区域的大小取决于脉冲加热装置的脉冲频率和患者组织的热导率。脉冲加热装置可以是由激光纤维引导到要破坏的组织的相干光源。在另一个实施例中，脉冲加热装置是聚焦的超声换能器，其在要破坏的组织区域内的焦点处散发超声波能量。使用温度敏感脉冲序列的磁共振成像系统产生组织的图像和被加热的区域，以允许外科医生改变脉冲加热装置的位置或改变脉冲频率。

2. 发明授权

US4294631A Surface corrosion inhibition of zirconium alloys by laser surface .beta.-quenching 失效
标题翻译：通过激光表面β-淬火对锆合金进行表面腐蚀抑制
公开(公告)号：US4294631A
公开(公告)日：1981-10-13
申请号：US972389
申请日：1978-12-22
申请人： Thomas R. Anthony , Harvey E. Cline
发明人： Thomas R. Anthony , Harvey E. Cline
IPC分类号： C22F1/18 , C22F3/00 , B23K26/00
CPC分类号： C22F3/00 , C22F1/186
摘要： A laser beam is scanned over the surface of a structure comprising zirconium alloy in overlapping passes to form a barrier layer of corrosion resistant .beta.-quenched zirconium alloy at the treated surface.
摘要翻译：激光束在重叠通道中在包含锆合金的结构的表面上扫描，以在处理的表面形成耐腐蚀的β-淬火锆合金的阻挡层。

3. 发明授权

US4224504A Apparatus for practicing temperature gradient zone melting 失效
标题翻译：用于实施温度梯度区熔化的装置
公开(公告)号：US4224504A
公开(公告)日：1980-09-23
申请号：US917492
申请日：1978-06-21
申请人： Carl A. Erikson , Thomas R. Anthony , Harvey E. Cline , Siegwalt Ludke , John O. Fielding
发明人： Carl A. Erikson , Thomas R. Anthony , Harvey E. Cline , Siegwalt Ludke , John O. Fielding
IPC分类号： C30B13/00 , C30B13/02 , H01L21/00 , B25J15/06 , F27B9/06
CPC分类号： H01L21/67115 , C30B13/005 , C30B13/02
摘要： An apparatus for practicing temperature gradient zone melting simultaneously on a plurality of semiconductor bodies comprises a closable work chamber for receiving the bodies for processing; a heat source disposed in the work chamber and comprising a first closure member thereof; a heat sink disposed in the work chamber and comprising a second closure member thereof and means for transferring one or more bodies of semiconductor material to the work chamber for processing and from the work chamber subsequent to processing. The transferring means comprises manipulative means for selectively engaging the semiconductor bodies and supporting the bodies in transit and drive means for moving the manipulative means toward and away from the work chamber and orienting the manipulative means with respect to the semiconductor bodies.
摘要翻译：用于在多个半导体主体上同时实施温度梯度区熔化的装置包括：用于接收加工体的可关闭工作室; 设置在所述工作室中并包括其第一关闭构件的热源; 设置在所述工作室中并包括其第二闭合构件的散热器和用于将一个或多个半导体材料体转移到所述工作室进行处理的装置和用于在处理之后的所述工作室的装置。传送装置包括用于选择性地接合半导体主体并且支撑传送体的驱动装置和用于使操作装置朝向和远离工作室移动并使操纵装置相对于半导体主体定向的驱动装置的操纵装置。

4. 发明授权

US4207670A Method for making a solid state neuron 失效
标题翻译：制作固态神经元的方法
公开(公告)号：US4207670A
公开(公告)日：1980-06-17
申请号：US946610
申请日：1978-09-28
申请人： Harvey E. Cline , Thomas R. Anthony , Ivar Giaever
发明人： Harvey E. Cline , Thomas R. Anthony , Ivar Giaever
IPC分类号： G06N3/063 , G09B23/28 , H01L21/24 , B01J17/00
CPC分类号： G06N3/063 , G09B23/28 , H01L21/24
摘要： Temperature gradient zone melting is utilized to make a solid state neuron which mimics the conducting nerve pulses by a biological nerve cell and its nerve fiber.
摘要翻译：利用温度梯度区熔化制造一种固体神经元，其通过生物神经细胞及其神经纤维模拟导电神经脉冲。

5. 发明授权

US4198247A Sealant films for materials having high intrinsic vapor pressure 失效
标题翻译：具有高内在蒸汽压力的材料的密封胶膜
公开(公告)号：US4198247A
公开(公告)日：1980-04-15
申请号：US967281
申请日：1978-12-07
申请人： Thomas R. Anthony , Harvey E. Cline , Douglas E. Houston
发明人： Thomas R. Anthony , Harvey E. Cline , Douglas E. Houston
IPC分类号： H01L21/24 , H01L21/228
CPC分类号： H01L21/24 , Y10S438/902
摘要： A sealant film is employed to migrate species having a high intrinsic vapor pressure through a solid body of semiconductor material by temperature gradient zone melting.
摘要翻译：采用密封膜将具有高固有蒸汽压的物质通过温度梯度区熔化的半导体材料的固体物质迁移。

6. 发明授权

US4071378A Process of making a deep diode solid state transformer 失效
标题翻译：制造深二极管固态变压器的工艺
公开(公告)号：US4071378A
公开(公告)日：1978-01-31
申请号：US738709
申请日：1976-11-04
申请人： Thomas R. Anthony , Harvey E. Cline
发明人： Thomas R. Anthony , Harvey E. Cline
IPC分类号： H01L21/24 , H01L23/522 , H01L27/08 , H01L21/225
CPC分类号： H01L27/0814 , H01L21/24 , H01L23/522 , H01L27/08 , H01F27/2804 , H01L2924/0002
摘要： An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for connecting the columnar structures into two series electrical circuit arrangements to function respectively as the primary and secondary windings of a deep diode solid state transformer.
摘要翻译：在半导体材料体中设置有一列柱状结构。每个柱状结构的材料是其中掺杂金属具有固体溶解度的人体的再结晶材料。提供了用于将柱状结构连接成两个串联电路布置的装置，以分别作为深二极管固态变压器的初级和次级绕组起作用。

7. 发明授权

US4040171A Deep diode zeners 失效
标题翻译：深二极管齐纳二极管
公开(公告)号：US4040171A
公开(公告)日：1977-08-09
申请号：US679206
申请日：1976-04-22
申请人： Harvey E. Cline , Thomas R. Anthony
发明人： Harvey E. Cline , Thomas R. Anthony
IPC分类号： C30B13/02 , H01L21/24 , H01L25/07 , H01L27/08 , H01L29/04 , H01L29/866 , B01J17/00
CPC分类号： H01L29/866 , C30B13/02 , H01L21/24 , H01L25/074 , H01L27/0814 , H01L29/04 , H01L2224/45124 , H01L2224/4813 , H01L2924/01322 , Y10S438/983
摘要： A deep diode zener has a lamellar structured body of single crystal semiconductor material. The lamellar structure is produced by a thermal gradient zone melting process embodying the thermal migration of metal "wires" through the body to form a region of conductivity opposite to that of the body. The material of the region is recrystallized semiconductor material of the body with solid solubility of the metal "wire" to impart the desired type conductivity and resistivity to the region.
摘要翻译：深二极管齐纳二极管具有单晶半导体材料的层状结构体。层状结构是通过体现金属“导线”穿过身体的热迁移的热梯度区熔融过程产生的，以形成与身体相反的导电区域。该区域的材料是具有金属“线”的固溶度的本体的再结晶半导体材料，以赋予该区域所需的导电性和电阻率。

8. 发明授权

US4006040A Semiconductor device manufacture 失效
标题翻译：半导体器件制造
公开(公告)号：US4006040A
公开(公告)日：1977-02-01
申请号：US645672
申请日：1975-12-31
申请人： Harvey E. Cline , Thomas R. Anthony , Mike F. Chang
发明人： Harvey E. Cline , Thomas R. Anthony , Mike F. Chang
IPC分类号： C30B19/00 , C30B13/02 , H01L21/208 , H01L21/24 , H01L21/40 , H01L21/761 , H01L29/04 , H01L21/225
CPC分类号： H01L21/24 , C30B13/02 , H01L21/40 , H01L21/761 , H01L29/045
摘要： An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material embodies the sintering of the metal to the surface of the body. The sintering process enables one to migrate two or more intersecting "wires" simultaneously as well as three wires intersecting at a common point of origin.
摘要翻译：引起富金属半导体材料的熔融区域通过相同半导体材料的固体物体移动的改进方法体现了金属与体表面的烧结。烧结过程使得能够同时迁移两个或多个相交的“电线”以及在公共原点相交的三条电线。

9. 发明授权

US3956026A Making a deep diode varactor by thermal migration 失效
标题翻译：通过热迁移制造深二极管变容二极管
公开(公告)号：US3956026A
公开(公告)日：1976-05-11
申请号：US528235
申请日：1974-11-29
申请人： Harvey E. Cline , Thomas R. Anthony
发明人： Harvey E. Cline , Thomas R. Anthony
IPC分类号： H01L21/18 , H01L21/24 , H01L29/00 , H01L29/93 , H01L7/34 , H01L7/00
CPC分类号： H01L29/93 , H01L21/185 , H01L21/24 , H01L29/00
摘要： A varactor has a lamellar structure of a plurality of abutting regions of alternate and opposite type conductivity. The structure is produced by thermal gradient zone melting processing.
摘要翻译：变容二极管具有交替和相对导电性的多个邻接区域的层状结构。该结构通过热梯度区熔融加工生产。

10. 发明授权

US3956023A Process for making a deep power diode by thermal migration of dopant 失效
标题翻译：通过掺杂剂的热迁移制造深度功率二极管的工艺
公开(公告)号：US3956023A
公开(公告)日：1976-05-11
申请号：US519249
申请日：1974-10-30
申请人： Harvey E. Cline , Thomas R. Anthony
发明人： Harvey E. Cline , Thomas R. Anthony
IPC分类号： H01L21/18 , H01L21/24 , H01L29/00 , H01L7/36
CPC分类号： H01L21/24 , H01L21/185 , H01L29/00 , Y10S148/107 , Y10S148/166
摘要： A semiconductor diode comprises a first body of semiconductor material having a selected resistivity and a first type conductivity and a region of second type conductivity and a selected resistivity. The second body consists of recrystallized semiconductor material of a layer thereof having solid solubility of a dopant therein and has the same crystallographic structure as the first body. The second region is formed by a temperature gradient zone melting process embodying the migration of a metal-enriched melt of semiconductor material through the second body of semiconductor material. Preferably, the metal-enriched melt is no greater than approximately 20 microns in thickness. The second body initially has a axial crystallographic orientation when it is a wafer. However, the second body initially may be polycrystalline semiconductor material.
摘要翻译：半导体二极管包括具有选定电阻率和第一类型导电性的第一半导体材料体和第二类型导电性区域和所选择的电阻率。第二体由其中具有固体溶解度的层的再结晶半导体材料组成，并具有与第一主体相同的晶体结构。第二区域是通过体现半导体材料的金属富集的熔体通过半导体材料的第二体的迁移的温度梯度区熔融过程形成的。优选地，金属富集的熔体的厚度不大于约20微米。当它是晶片时，第二主体最初具有<111>轴向晶体取向。然而，第二主体最初可以是多晶半导体材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式