专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06353511B1 Thin film write head for improved high speed and high density recording 有权
标题翻译：薄膜写入头用于改进高速和高密度记录
公开(公告)号：US06353511B1
公开(公告)日：2002-03-05
申请号：US09335155
申请日：1999-06-15
申请人： Zhupei Shi , Lien-Chang Wang , Bill Crue , Yingjian Chen , Syed Hossain
发明人： Zhupei Shi , Lien-Chang Wang , Bill Crue , Yingjian Chen , Syed Hossain
IPC分类号： G11B531
CPC分类号： G11B5/3967 , G11B5/3109 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3153 , G11B5/3163 , G11B5/455
摘要： A preferred embodiment provides a thin film write head having upper and lower pole structures each having pedestal pole tips formed with CoNiFe. The pedestal pole tips may have from about 60% to about 70% Co and from about 10% to about 15% Ni. The upper pole structure of the preferred embodiment has a laminated yoke portion having upper and lower layers. The lower layer is stitched to the pedestal pole tip of the upper pole structure and comprises FeXN, where X is selected from the group consisting of Rh, Ta, Hf, Al, Zr, Ti, Ru, Si, Cr, V, Si, Sr, Nb, Mo, Ru, and Pd. The upper layer comprises NiFe preferably having from about 15% to about 55% of Fe. It is preferred to define the lower layer of the yoke by etching FeXN material using the upper layer as a hard mask. In a preferred method and embodiment, the top surfaces of the conductor coil and the upper pedestal pole tip are planarized with an inorganic capping layer formed thereover to insulate the conductor coil from the yoke and to provide a low apex angle to form the yoke over.
摘要翻译：优选实施例提供一种具有上和下极结构的薄膜写头，每个具有由CoNiFe形成的基座极尖。基座极尖可以具有约60％至约70％的Co和约10％至约15％的Ni。优选实施例的上极结构具有具有上层和下层的层叠轭部分。下层被缝合到上极结构的基座极端，并且包括FeXN，其中X选自Rh，Ta，Hf，Al，Zr，Ti，Ru，Si，Cr，V，Si， Sr，Nb，Mo，Ru和Pd。上层包含优选具有约15％至约55％Fe的NiFe。优选通过使用上层作为硬掩模蚀刻FeXN材料来限定轭的下层。在优选的方法和实施例中，导体线圈和上基座极尖的顶表面与形成在其上的无机覆盖层平坦化，以使导体线圈与轭绝缘，并提供低顶角以形成轭。

2. 发明授权

US06233116B1 Thin film write head with improved laminated flux carrying structure and method of fabrication 有权
标题翻译：具有改进的层叠助焊剂携带结构和制造方法的薄膜写头
公开(公告)号：US06233116B1
公开(公告)日：2001-05-15
申请号：US09192388
申请日：1998-11-13
申请人： Yingjian Chen , Zhupei Shi , Syed Hossain
发明人： Yingjian Chen , Zhupei Shi , Syed Hossain
IPC分类号： G11B5147
CPC分类号： G11B5/3109 , G11B5/3113 , G11B5/313 , G11B5/3156
摘要： The present invention provides a thin film write head having an improved laminated flux carrying structure and method of fabrication. The preferred embodiment provides laminated layers of: high moment magnetic material, and easily aligned high resistivity magnetic material. In the preferred embodiment, the easily aligned laminating layer induces uniaxial anisotropy, by exchange coupling, to improve uniaxial anisotropy in the high moment material. This allows deposition induced uniaxial anisotropy by DC magnetron sputtering and also provides improved post deposition annealing, if desired. It is preferred to laminate FeXN, such as FeRhN, or other crystalline structure material, with an amorphous alloy material, preferably Co based, such as CoZrCr. In the preferred embodiment, upper and lower pole structures may both be laminated as discussed above. Such laminated structures have higher Bs than structures with insulative laminates, and yokes and pole tips and may be integrally formed, if desired, because flux may travel along or across the laminating layers. The preferred embodiment of the present invention improves soft magnetic properties, reduces eddy currents, improves hard axis alignment while not deleteriously affecting the coercivity, permeability, and magnetostriction of the structure, thus allowing for improved high frequency operation.
摘要翻译：本发明提供一种具有改进的层叠助焊剂携带结构和制造方法的薄膜写入头。优选的实施例提供了叠层层：高力矩磁性材料和容易对准的高电阻率磁性材料。在优选实施例中，容易对准的层压层通过交换耦合引起单轴各向异性，以提高高力矩材料中的单轴各向异性。这允许通过DC磁控溅射沉积诱导的单轴各向异性，并且如果需要，还提供改进的后沉积退火。优选将FeXN如FeRhN或其它晶体结构材料与非晶合金材料（优选Co基）如CoZrCr层压。在优选实施例中，如上所述，可以将上极和下极结构层叠。如果需要，这种层压结构具有比具有绝缘层压板的结构更高的Bs，并且轭和磁极尖端可以一体地形成，因为焊剂可以沿着或穿过层压层行进。本发明的优选实施例提高了软磁性能，降低涡流，改善了硬轴对准，同时不会有害地影响结构的矫顽力，磁导率和磁致伸缩，从而改善了高频运行。

3. 发明授权

US06353318B1 Magnetoresistive sensor having hard biased current perpendicular to the plane sensor 有权
标题翻译：具有垂直于平面传感器的硬偏置电流的磁阻传感器
公开(公告)号：US06353318B1
公开(公告)日：2002-03-05
申请号：US09523587
申请日：2000-03-10
申请人： Kyusik Sin , Yingjian Chen , Ningja Zhu , Bill Crue
发明人： Kyusik Sin , Yingjian Chen , Ningja Zhu , Bill Crue
IPC分类号： G01R3302
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , G11B2005/3996
摘要： The apparatus of the present invention is embodied in a magnetic field sensor having a magnetoresistive element, a magnetic bias layer for biasing the magnetoresistive element with a magnetic field, and an electrical insulator positioned between the magnetic bias layer and the magnetoresistive element. The insulator prevents the flow of electrical current between the magnetoresistive element and the magnetic bias layer and at least a portion of the insulator allows passage of the magnetic field from the magnetic bias layer to the magnetoresistive element such that the magnetoresistive element is biased. The method of the present invention is embodied in a method for fabricating a magnetic field sensor having the steps of forming a magnetoresistive element, forming a lower insulator with a main section and an end section over at least a portion of the magnetoresistive element, forming a magnetic bias layer over the main section of the lower insulator, and forming an upper insulator over the magnetic bias layer and over the end section of the lower insulator, such that the magnetic bias layer is electrically insulated from the magnetoresistive element.
摘要翻译：本发明的装置体现在具有磁阻元件的磁场传感器，用于利用磁场偏置磁阻元件的磁偏置层和位于磁偏置层和磁阻元件之间的电绝缘体。绝缘体防止磁阻元件和磁偏置层之间的电流的流动，并且绝缘体的至少一部分允许磁场从磁偏置层通过到磁阻元件，使得磁阻元件被偏置。本发明的方法体现在一种用于制造磁场传感器的方法，该磁场传感器具有以下步骤：形成磁阻元件，在主阻抗元件的至少一部分上形成具有主部分和端部的下绝缘体，形成在所述下绝缘体的主部分上方形成磁偏置层，并且在所述磁偏置层上方并在所述下绝缘体的所述端部上方形成上绝缘体，使得所述磁偏置层与所述磁阻元件电绝缘。

4. 发明授权

US08146236B1 Method for providing a perpendicular magnetic recording (PMR) transducer 有权
标题翻译：提供垂直磁记录（PMR）传感器的方法
公开(公告)号：US08146236B1
公开(公告)日：2012-04-03
申请号：US12057692
申请日：2008-03-28
申请人： Guanghong Luo , Liubo Hong , Honglin Zhu , Yun-Fei Li , Yingjian Chen
发明人： Guanghong Luo , Liubo Hong , Honglin Zhu , Yun-Fei Li , Yingjian Chen
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method and system for providing a perpendicular magnetic recording (PMR) transducer from pole layer(s) are disclosed. First and second planarization stop layers are provided on the pole layer(s). A mask is provided on the second planarization stop layer. A first portion of the mask resides on a portion of the pole layer(s) used to form the PMR pole. The PMR pole is defined after the mask is provided. An intermediate layer surrounding at least the PMR pole is provided. A first planarization is performed on at least the intermediate layer. A portion of the second planarization stop layer is removed during the first planarization. A remaining portion of the second planarization stop layer is removed. A second planarization is performed. A portion of the first planarization stop layer remains after the second planarization. A write gap and shield are provided on the PMR pole and write gap, respectively.
摘要翻译：公开了一种用于从极层提供垂直磁记录（PMR）换能器的方法和系统。第一和第二平坦化停止层设置在极层上。在第二平坦化停止层上设置掩模。掩模的第一部分位于用于形成PMR极的极层的一部分上。在提供面罩之后定义PMR极。提供至少围绕PMR极的中间层。至少在中间层上执行第一平面化。在第一平坦化期间，去除第二平坦化停止层的一部分。去除第二平坦化停止层的剩余部分。执行第二平面化。在第二平面化之后，第一平坦化停止层的一部分保留。分别在PMR极和写间隙上提供写间隙和屏蔽。

5. 发明申请

US20110151279A1 MAGNETIC WRITE HEAD MANUFACTURED BY AN ENHANCED DAMASCENE PROCESS PRODUCING A TAPERED WRITE POLE WITH A NON-MAGNETIC SPACER AND NON-MAGNETIC BUMP 有权
标题翻译：通过增强的大面积工艺制造的磁性写头，用非磁性间隔器和非磁性块形成带状写入点
公开(公告)号：US20110151279A1
公开(公告)日：2011-06-23
申请号：US12641251
申请日：2009-12-17
申请人： Donald G. Allen , Amanda Baer , Yingjian Chen , Andrew Chiu , Liubo Hong , Wen-Chien D. Hsiao , Edward H.P. Lee , Fenglin Liu , Aron Pentek , Katalin Pentek , Kyusik Shin , Yi Zheng , Qiping Zhong , Honglin Zhu
发明人： Donald G. Allen , Amanda Baer , Yingjian Chen , Andrew Chiu , Liubo Hong , Wen-Chien D. Hsiao , Edward H.P. Lee , Fenglin Liu , Aron Pentek , Katalin Pentek , Kyusik Shin , Yi Zheng , Qiping Zhong , Honglin Zhu
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/1278 , G11B5/3116 , G11B5/314 , G11B5/3143 , G11B5/3146 , G11B5/315 , Y10T428/11 , Y10T428/1171
摘要： A magnetic write head having a tapered trailing edge and having a magnetic layer formed over a trailing edge of the write pole at a location recessed from the ABS, the magnetic layer being separated from the trailing edge of the write pole by a thin non-magnetic layer. The thin non-magnetic layer is preferably sufficiently thin that the magnetic layer can function as a portion of the write pole in a region removed from the ABS. A trailing magnetic shield is formed over the write pole and is separated from the write pole by a non-magnetic trailing gap layer. A non-magnetic spacer layer can be formed over the magnetic layer to provide additional separation between the magnetic layer and the trailing magnetic shield.
摘要翻译：一种具有锥形后缘并具有磁性层的磁性写头，该磁性层形成在从ABS的凹陷处的写入极的后缘上，该磁性层通过薄的非磁性的方式与写入极的后缘分离层。薄的非磁性层优选地足够薄，使得磁性层可以在从ABS去除的区域中用作写入极的一部分。尾磁屏蔽形成在写极上，并且通过非磁性拖尾间隙层与写极分离。可以在磁性层之上形成非磁性间隔层，以在磁性层和尾部磁屏蔽之间提供额外的间隔。

6. 发明申请

US20110134567A1 PERPENDICULAR MAGNETIC WRITE HEAD WITH WRAP-AROUND SHIELD, SLANTED POLE AND SLANTED POLE BUMP FABRICATED BY DAMASCENE PROCESS 有权
标题翻译：具有缠绕垫片的扁平磁头写头，由达玛斯工艺制成的狭缝和斜面垫
公开(公告)号：US20110134567A1
公开(公告)日：2011-06-09
申请号：US12634456
申请日：2009-12-09
申请人： Yingjian Chen , Liubo Hong , Yimin Hsu , Edward Hin Pong Lee , Katalin Pentek
发明人： Yingjian Chen , Liubo Hong , Yimin Hsu , Edward Hin Pong Lee , Katalin Pentek
IPC分类号： G11B5/10
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315
摘要： A magnetic write head having a write pole with a tapered trailing edge. The write head has a non-magnetic step layer and a non-magnetic bump formed on the front edge of the magnetic step layer. A non-magnetic trailing gap layer is formed over the tapered trailing edge of the write pole and over the non-magnetic bump and over the non-magnetic step layer. A magnetic trailing shield is formed over at least a portion of the non-magnetic gap layer.
摘要翻译：一种具有具有锥形后缘的写极的磁写头。写头具有形成在磁性阶梯层的前边缘上的非磁性阶梯层和非磁性凸块。非磁性拖尾间隙层形成在写磁极的锥形后缘和非磁性凸块之上以及非磁性阶梯层之上。在非磁隙层的至少一部分上形成有磁性后屏蔽。

7. 发明授权

US07419891B1 Method and system for providing a smaller critical dimension magnetic element utilizing a single layer mask 失效
标题翻译：用于使用单层掩模提供较小临界尺寸的磁性元件的方法和系统
公开(公告)号：US07419891B1
公开(公告)日：2008-09-02
申请号：US11352652
申请日：2006-02-13
申请人： Benjamin Chen , Hongping Yuan , Danning Yang , Wei Zhang , Hugh C. Hiner , Lei Wang , Yingjian Chen , Brant Nease
发明人： Benjamin Chen , Hongping Yuan , Danning Yang , Wei Zhang , Hugh C. Hiner , Lei Wang , Yingjian Chen , Brant Nease
IPC分类号： H01L21/20
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909
摘要： The method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic element stack that includes a plurality of layers and depositing a stop layer on the magnetic element stack. The method and system also include providing a dielectric antireflective coating (DARC) layer on the stop layer, forming a single layer mask for defining the magnetic element on a portion of the DARC layer, and removing a remaining portion of the DARC layer not covered by the single layer mask. The portion of the DARC layer covers a portion of the stop layer. The method further includes removing a remaining portion of the stop layer and defining the magnetic element using at least the portion of stop layer as a mask.
摘要翻译：公开了用于提供磁性元件的方法和系统。该方法和系统包括提供包括多个层的磁性元件堆叠并在磁性元件堆叠上沉积停止层。该方法和系统还包括在停止层上提供介电抗反射涂层（DARC）层，形成用于在DARC层的一部分上限定磁性元件的单层掩模，以及去除DARC层未覆盖的DARC层的剩余部分单层面膜。 DARC层的一部分覆盖停止层的一部分。该方法还包括使用停止层的至少一部分作为掩模去除停止层的剩余部分并限定磁性元件。

8. 发明授权

US07342752B1 Magnetoresistive read head having a bias structure with at least one dusting layer 有权
标题翻译：具有至少一个除尘层的偏置结构的磁阻读取头
公开(公告)号：US07342752B1
公开(公告)日：2008-03-11
申请号：US10769239
申请日：2004-01-31
申请人： Wei Zhang , Yingjian Chen , Satoru Araki , Mohamad T Krounbi
发明人： Wei Zhang , Yingjian Chen , Satoru Araki , Mohamad T Krounbi
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive read head includes a magnetoresistive sensor and a bias structure adjacent to the magnetoresistive sensor. The bias structure provides a magnetostatic bias field for the magnetoresistive sensor. The bias structure includes an underlayer, a bias layer over the underlayer, and at least one dusting layer directly below at least one of the underlayer or the bias layer.
摘要翻译：磁阻读取头包括磁阻传感器和与磁阻传感器相邻的偏置结构。偏置结构为磁阻传感器提供静磁偏置场。偏置结构包括底层，底层上的偏置层，以及直接位于底层或偏置层中的至少一个的至少一个除尘层。

9. 发明授权

US07289303B1 Spin valve sensors having synthetic antiferromagnet for longitudinal bias 失效
标题翻译：旋转阀传感器具有用于纵向偏置的合成反铁磁体
公开(公告)号：US07289303B1
公开(公告)日：2007-10-30
申请号：US09828635
申请日：2001-04-05
申请人： Kyusik Sin , Ningjia Zhu , Yingjian Chen
发明人： Kyusik Sin , Ningjia Zhu , Yingjian Chen
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y25/00 , G01R33/093 , H01F10/3272 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed magnetic moment adjoining the exchange coupling layer. The exchange coupling layer and ferromagnetic layer form a synthetic antiferromagnetic structure with part of the free layer, providing bias that reduces magnetic instabilities at edges of the free layer. Such synthetic antiferromagnetic structures can provide a stronger bias than conventional antiferromagnetic layers, as well as a more exactly defined track width than conventional hard magnetic bias layers. The synthetic antiferromagnetic structures can also provide protection for the free layer during processing, in contrast with the trimming of conventional antiferromagnetic layers that exposes if not removes part of the free layer.
摘要翻译：公开了具有减小诸如巴克豪森噪声等边缘效应的机构的磁阻（MR）传感器。传感器包括钉扎层和具有邻接自由层的交换耦合层的自由层，以及具有与交换耦合层邻接的固定磁矩的铁磁层。交换耦合层和铁磁层形成具有部分自由层的合成反铁磁结构，提供降低自由层边缘的磁性不稳定性的偏压。这种合成反铁磁结构可以提供比常规反铁磁层更强的偏压，以及比常规硬磁偏置层更精确地定义的轨道宽度。合成反铁磁性结构也可以在加工过程中为自由层提供保护，与如果不除去部分自由层的常规反铁磁层的修整相反。

10. 发明授权

US07286329B1 GMR sensor with shallow contiguous junction and bias layers aligned with free sensor layers 失效
标题翻译： GMR传感器具有与自由传感器层对准的浅连续结和偏置层
公开(公告)号：US07286329B1
公开(公告)日：2007-10-23
申请号：US10788656
申请日：2004-02-27
申请人： Yingjian Chen , Wei Zhang , Mohamad T. Krounbi , Satoru Araki , Jinqiu Zhang
发明人： Yingjian Chen , Wei Zhang , Mohamad T. Krounbi , Satoru Araki , Jinqiu Zhang
IPC分类号： G11B5/39
CPC分类号： G01R31/318357 , G11B5/3932
摘要： A magnetic sensor is disclosed having a shallow contiguous junction. Such a sensor is can greatly increase yield for mass-produced heads, especially for large wafers. The magnetic bias layers can be aligned with a free layer of the sensor, improving performance. Milling may be terminated prior to penetration of an antiferromagnetic layer, so that for example the antiferromagnetic layer may extend significantly beyond the free and pinned layers of the sensor.
摘要翻译：公开了一种具有浅连续结的磁传感器。这种传感器可以大大提高批量生产头部的产量，特别是对于大型晶片。磁偏置层可以与传感器的自由层对准，从而提高性能。铣削可以在穿透反铁磁层之前终止，使得例如反铁磁层可以显着地延伸超过传感器的自由和固定层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式