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    • 9. 发明授权
    • Method for making high speed, high areal density inductive write structure
    • 制造高速,高密度感应写入结构的方法
    • US07007372B1
    • 2006-03-07
    • US10656311
    • 2003-09-05
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • Yingjian ChenHua-Ching TongLei WangXizeng Shi
    • G11B5/127H04R31/00
    • G11B5/3146G11B5/3109G11B5/3113G11B5/3116G11B5/313G11B5/3153G11B5/3967Y10T29/49032Y10T29/49039Y10T29/49043Y10T29/49048Y10T29/49052Y10T29/49071Y10T29/49073
    • An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
    • 公开了用于磁数据记录系统的感应写入元件。 写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。 写元件包括由第一和第二磁极构成的磁轭。 第一极包括由高磁矩(高B sat sat)材料构成的基座,其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。 第二极包括一高层高层材料的薄层(也优选具有CoZrCr叠层的FeRhN纳米晶膜),其余部分由能够电镀的磁性材料构成,例如Ni -Fe合金。 导电线圈通过第一和第二极之间的磁轭,当电流流过线圈时,引起磁轭中的磁通量。 轭中的磁通在写入间隙产生边缘场,由此可以将信号传递到通过的磁介质上。