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1. 发明申请

US20080044759A1 Fine Pattern Forming Material, Method Of Forming Fine Resist Pattern And Electronic Device 审中-公开
标题翻译：精细图案形成材料，形成精细抗蚀图案和电子器件的方法
公开(公告)号：US20080044759A1
公开(公告)日：2008-02-21
申请号：US11660970
申请日：2005-08-23
申请人： Takeo Ishibashi , Kiyohisa Takahashi , Yusuke Takano
发明人： Takeo Ishibashi , Kiyohisa Takahashi , Yusuke Takano
IPC分类号： G03C1/00 , G03C5/00
CPC分类号： G03F7/40 , H01L21/0274 , H01L21/3086 , H01L21/3088
摘要： A fine pattern forming material comprising a water soluble resin of polyvinyl alcohol derivative, etc., a water soluble crosslinking agent of melamine derivative, urea derivative, etc., an amine compound, a nonionic surfactant and water or a solution of a mixture of water and water soluble organic solvent, the solution exhibiting a pH value of >7. This fine pattern forming material is applied on to resist pattern (3) to thereby form coating layer (4), and the coating layer (4) is heated and developed to thereby form crosslinked coating layer (5). The thickness of the crosslinked coating layer is increased by the use of a secondary amine compound and/or tertiary amine compound over that realized when no amine compound is added, while the thickness of the crosslinked coating layer is decreased by the use of a quaternary amine.
摘要翻译：包含聚乙烯醇衍生物的水溶性树脂等的精细图案形成材料，三聚氰胺衍生物的水溶性交联剂，脲衍生物等，胺化合物，非离子表面活性剂和水或水混合物的溶液和水溶性有机溶剂，该溶液的pH值> 7。将这种精细图案形成材料涂覆在抗蚀剂图案（3）上，从而形成涂层（4），并将涂层（4）加热显影，从而形成交联涂层（5）。通过使用仲胺化合物和/或叔胺化合物，当不添加胺化合物时，交联涂层的厚度增加，而交联涂层的厚度通过使用季胺。

2. 发明授权

US07399582B2 Material for forming fine pattern and method for forming fine pattern using the same 有权
标题翻译：用于形成精细图案的材料和使用其形成精细图案的方法
公开(公告)号：US07399582B2
公开(公告)日：2008-07-15
申请号：US10565113
申请日：2004-06-04
申请人： Kiyohisa Takahashi , Yusuke Takano
发明人： Kiyohisa Takahashi , Yusuke Takano
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G03F7/40
摘要： In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.
摘要翻译：在通过施加精细图案形成材料使抗蚀剂图案小型化的方法中，提供了用于提供具有固化涂层图案的精细图案形成材料，其中通过水显影减少显影缺陷，其中精细图案形成材料包括水溶性树脂，水溶性交联剂和水或由水和水溶性有机溶剂组成的混合溶液，并且还包含胺化合物。

3. 发明授权

US07799513B2 Process for preventing development defect and composition for use in the same 有权
标题翻译：用于预防发展缺陷和组合物的方法
公开(公告)号：US07799513B2
公开(公告)日：2010-09-21
申请号：US10518105
申请日：2003-06-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： G03F7/00
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：（1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4烷醇胺盐的预防显影缺陷用组合物，或（2）氟化烷基季铵无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

4. 发明申请

US20070059644A1 Micropattern formation material and method of micropattern formation 审中-公开
标题翻译：微图案形成材料和微图案形成方法
公开(公告)号：US20070059644A1
公开(公告)日：2007-03-15
申请号：US10557926
申请日：2004-06-04
申请人： Kiyohisa Takahashi , Yusuke Takano
发明人： Kiyohisa Takahashi , Yusuke Takano
IPC分类号： G03C5/00
CPC分类号： H01L21/0274 , G03F7/0035 , G03F7/40
摘要： The present invention provides a method of forming a fine pattern, comprising the steps of forming a resist pattern 3 made of a chemically amplified photoresist on a substrate 1 with a diameter of 6 inches or more, applying a fine pattern forming material containing a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solvent of water and a water-soluble organic solvent to form a coated layer 4, baking the chemically amplified photoresist pattern and the coated layer, and developing the coated layer after baking, wherein the water-soluble resin in the fine pattern forming material is a water-soluble resin, the peak temperature of heat of fusion of which in a DSC curve is higher than the baking temperature in the above baking step and simultaneously higher than 130° C.
摘要翻译：本发明提供一种形成精细图案的方法，包括以下步骤：在直径为6英寸或更大的基底1上形成由化学放大光致抗蚀剂制成的抗蚀剂图案3，施加含有水溶性聚合物的精细图案形成材料，可溶性树脂，水溶性交联剂和水或水和水溶性有机溶剂的混合溶剂形成涂层4，烘烤化学放大的光致抗蚀剂图案和涂层，并烘烤后显影涂层，其中精细图案形成材料中的水溶性树脂是水溶性树脂，其DSC曲线中的熔化热的峰值温度高于上述烘烤步骤中的烘烤温度，同时高于130℃ 。

5. 发明申请

US20060183218A1 Material for forming fine pattern and method for forming fine pattern using the same 有权
标题翻译：用于形成精细图案的材料和使用其形成精细图案的方法
公开(公告)号：US20060183218A1
公开(公告)日：2006-08-17
申请号：US10565113
申请日：2004-06-04
申请人： Kiyohisa Takahashi , Yusuke Takano
发明人： Kiyohisa Takahashi , Yusuke Takano
IPC分类号： C12M1/34
CPC分类号： G03F7/40
摘要： In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.
摘要翻译：在通过施加精细图案形成材料使抗蚀剂图案小型化的方法中，提供了用于提供具有固化涂层图案的精细图案形成材料，其中通过水显影减少显影缺陷，其中精细图案形成材料包括水溶性树脂，水溶性交联剂和水或由水和水溶性有机溶剂组成的混合溶液，并且还包含胺化合物。

6. 发明申请

US20100324330A1 Process for Preventing Development Defect and Composition for Use in the Same 审中-公开
标题翻译：防止发展缺陷和组合使用的过程
公开(公告)号：US20100324330A1
公开(公告)日：2010-12-23
申请号：US12853640
申请日：2010-08-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： C07C309/02 , C07C53/21 , C07C55/14
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：（1）C4〜C15全氟烷基羧酸，C4〜C10全氟烷基磺酸和全氟己二酸的铵盐，四烷基铵盐或C1〜C4链烷醇胺盐，或（2）氟化烷基季铵无机酸的盐，其中所述表面活性剂以相对于酸与碱的比例为1:1-1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

7. 发明授权

US07592132B2 Method for fine pattern formation 有权
标题翻译：精细图案形成的方法
公开(公告)号：US07592132B2
公开(公告)日：2009-09-22
申请号：US11660199
申请日：2005-08-31
申请人： Kiyohisa Takahashi , Yusuke Takano
发明人： Kiyohisa Takahashi , Yusuke Takano
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , Y10T428/10
摘要： In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.
摘要翻译：在有效地使抗蚀剂图案小型化的方法中，使用超细图案形成材料提供限制交联膜的膜厚度并且还防止显影缺陷的超细图案形成方法，该超细图案形成材料含有由水溶性聚合物可溶性树脂，水溶性交联剂和水或水和水溶性有机溶剂的混合溶液，以及含胺化合物的显影液。含胺化合物的显影液优选为聚亚烷基胺，单甲醇胺，单乙醇胺等伯胺化合物，二甲胺，二乙胺，二乙醇胺，二乙醇胺等仲胺化合物，三甲胺，三乙胺，三乙醇胺等叔胺化合物，三乙醇胺，或季铵胺化合物如水合四甲胺。

8. 发明申请

US20070248770A1 Method for Fine Pattern Formation 有权
标题翻译：精细图案形成方法
公开(公告)号：US20070248770A1
公开(公告)日：2007-10-25
申请号：US11660199
申请日：2005-08-31
申请人： Kiyohisa Takahashi , Yusuke Takano
发明人： Kiyohisa Takahashi , Yusuke Takano
IPC分类号： H01L21/027
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , Y10T428/10
摘要： In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.
摘要翻译：在有效地使抗蚀剂图案小型化的方法中，使用超细图案形成材料提供限制交联膜的膜厚度并且还防止显影缺陷的超细图案形成方法，该超细图案形成材料含有由水溶性聚合物可溶性树脂，水溶性交联剂和水或水和水溶性有机溶剂的混合溶液，以及含胺化合物的显影液。含胺化合物的显影液优选为聚亚烷基胺，单甲醇胺，单乙醇胺等伯胺化合物，二甲胺，二乙胺，二乙醇胺，二乙醇胺等仲胺化合物，三甲胺，三乙胺，三乙醇胺等叔胺化合物，三乙醇胺，或季铵胺化合物如水合四甲胺。

9. 发明申请

US20050221236A1 Process for preventing development defect and composition for use in the same 有权
标题翻译：用于预防发展缺陷和组合物的方法
公开(公告)号：US20050221236A1
公开(公告)日：2005-10-06
申请号：US10518105
申请日：2003-06-10
申请人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
发明人： Yasushi Akiyama , Yusuke Takano , Kiyohisa Takahashi , Sung-Eun Hong , Tetsuo Okayasu
IPC分类号： G03F7/11 , G03F7/16 , G03F7/38 , H01L21/027 , G03F7/40
CPC分类号： G03F7/11 , G03F7/168
摘要： The composition for preventing development-defects containing (1) an ammonium salt, a tetraalkylammonium salt or a C1 to C4 alkanolamine salt of C4 to C15 perfluoroalkylcarboxylic acid, C4 to C10 perfluoroalkylsulfonic acid and perfluoroadipic acid, or (2) a fluorinated alkyl quaternary ammonium salt of inorganic acid, wherein said surfactant is formed at the equivalent ratio of acid to base of 1:1-1:3 is applied on a chemically amplified photoresist coating on a substrate having a diameter of 8 inches or more. The chemically amplified photoresist coating is baked before and/or after applying the composition for preventing development-defects described above. Then, the baked coating with the development-defect preventing composition coating is exposed to light, post-exposure-baked, and developed. By this process, compared with the case of not using the composition for preventing development-defects, the amount of reduction in film thickness of the photoresist subsequent to development treatment is made further bigger by 100 Å to 600 Å, and the development-defects on a substrate having a diameter of 8 inches or more is reduced as well as a resist pattern having a good cross section form can be formed without T-top form etc.
摘要翻译：用于防止含有（1）C 4的铵盐，四烷基铵盐或C 1〜C 4烷醇胺盐的显影缺陷的组合物的全氟烷基羧酸，C 4〜C 10全氟烷基磺酸和全氟己二酸，或（2）氟代烷基季铵盐无机酸，其中所述表面活性剂以相对于酸与碱的比例为1:1:1:3的比例形成在直径为8英寸或更大的基材上的化学放大的光致抗蚀剂涂层上。在施加用于防止上述显影缺陷的组合物之前和/或之后烘烤化学放大的光致抗蚀剂涂层。然后，将具有显影缺陷防止组合物涂层的烘烤涂层曝光，曝光后烘烤和显影。通过该方法，与不使用用于防止显影缺陷的组合物的情况相比，显影处理后的光致抗蚀剂的膜厚减少量进一步大于100埃至600埃，并且显影缺陷在直径为8英寸以上的基板减少，并且可以形成具有良好横截面形状的抗蚀剂图案而不具有T形顶端形式等。

10. 发明授权

US08568955B2 Composition for formation of top antireflective film, and pattern formation method using the composition 有权
标题翻译：用于形成顶部抗反射膜的组合物和使用该组合物的图案形成方法
公开(公告)号：US08568955B2
公开(公告)日：2013-10-29
申请号：US12747652
申请日：2008-12-10
申请人： Yasushi Akiyama , Go Noya , Katsutoshi Kuramoto , Yusuke Takano
发明人： Yasushi Akiyama , Go Noya , Katsutoshi Kuramoto , Yusuke Takano
IPC分类号： G11B7/24 , C04B24/22
CPC分类号： G03F7/091 , G03F7/0046
摘要： Disclosed is a composition for forming a top antireflective film, which comprises at least one fluorine-containing compound and a quaternary ammonium compound represented by the formula (1) [wherein at least one of R1, R2, R3, and R4 represents a hydroxyl group or an alkanol group, and the others independently represent a hydrogen or an alkyl group having 1 to 10 carbon atoms; and X− represents a hydroxyl group, a halide ion or a sulfate ion], and optionally a water-soluble polymer, an acid, a surfactant and an aqueous solvent. The composition for forming a top antireflective film can exhibit the same levels of functions as those of conventional top antireflective film-forming compositions when applied in a smaller amount.
摘要翻译：公开了一种用于形成顶部抗反射膜的组合物，其包含至少一种含氟化合物和由式（1）表示的季铵化合物[其中R 1，R 2，R 3和R 4中的至少一个表示羟基或链烷醇基，其余独立地表示氢或碳原子数1〜10的烷基。和X-表示羟基，卤离子或硫酸根离子]，以及任选的水溶性聚合物，酸，表面活性剂和水性溶剂。用于形成顶部抗反射膜的组合物可以表现出与常规顶部抗反射成膜组合物相同程度的功能，当以较小的量使用时。

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