专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07521741B2 Shielding structures for preventing leakages in high voltage MOS devices 有权
标题翻译：用于防止高压MOS器件泄漏的屏蔽结构
公开(公告)号：US07521741B2
公开(公告)日：2009-04-21
申请号：US11593424
申请日：2006-11-06
申请人： Yu-Chang Jong , Ruey-Hsin Liu , Yueh-Chiou Lin , Shun-Liang Hsu , Chi-Hsuen Chang , Te-Yin Hsia
发明人： Yu-Chang Jong , Ruey-Hsin Liu , Yueh-Chiou Lin , Shun-Liang Hsu , Chi-Hsuen Chang , Te-Yin Hsia
IPC分类号： H01L29/76
CPC分类号： H01L29/7834 , H01L29/0653 , H01L29/0692
摘要： A high-voltage MOS device includes a first high-voltage well (HVW) region overlying a substrate, a second HVW region overlying the substrate, a third HVW region of an opposite conductivity type as that of the first and the second HVW regions overlying the substrate, wherein the HVPW region has at least a portion between the first HVNW region and the second HVNW region, an insulation region in the first HVNW region, the second HVNW region, and the HVPW region, a gate dielectric over and extending from the first HVNW region to the second HVNW region, a gate electrode on the gate dielectric, and a shielding pattern electrically insulated from the gate electrode over the insulation region. Preferably, the gate electrode and the shielding pattern have a spacing of less than about 0.4 μm. The shielding pattern is preferably connected to a voltage lower than a stress voltage applied on the gate electrode.
摘要翻译：高压MOS器件包括覆盖衬底的第一高电压阱（HVW）区域，覆盖衬底的第二HVW区域，与覆盖衬底的第一和第二HVW区域相反的导电类型的第三HVW区域基板，其中所述HVPW区域具有在所述第一HVNW区域和所述第二HVNW区域之间的至少一部分，所述第一HVNW区域中的绝缘区域，所述第二HVNW区域和所述HVPW区域，在所述第一HVNW区域和所述第二HVNW区域之间延伸的栅极电介质 HVNW区域到第二HVNW区域，栅极电介质上的栅极电极以及在绝缘区域上与栅电极电绝缘的屏蔽图案。优选地，栅电极和屏蔽图案具有小于约0.4μm的间隔。屏蔽图案优选地连接到低于施加在栅电极上的应力电压的电压。

2. 发明申请

US20080001189A1 Shielding structures for preventing leakages in high voltage MOS devices 有权
标题翻译：用于防止高压MOS器件泄漏的屏蔽结构
公开(公告)号：US20080001189A1
公开(公告)日：2008-01-03
申请号：US11593424
申请日：2006-11-06
申请人： Yu-Chang Jong , Ruey-Hsin Liu , Yueh-Chiou Lin , Shun-Liang Hsu , Chi-Hsuen Chang , Te-Yin Hsia
发明人： Yu-Chang Jong , Ruey-Hsin Liu , Yueh-Chiou Lin , Shun-Liang Hsu , Chi-Hsuen Chang , Te-Yin Hsia
IPC分类号： H01L29/76
CPC分类号： H01L29/7834 , H01L29/0653 , H01L29/0692
摘要： A high-voltage MOS device includes a first high-voltage well (HVW) region overlying a substrate, a second HVW region overlying the substrate, a third HVW region of an opposite conductivity type as that of the first and the second HVW regions overlying the substrate, wherein the HVPW region has at least a portion between the first HVNW region and the second HVNW region, an insulation region in the first HVNW region, the second HVNW region, and the HVPW region, a gate dielectric over and extending from the first HVNW region to the second HVNW region, a gate electrode on the gate dielectric, and a shielding pattern electrically insulated from the gate electrode over the insulation region. Preferably, the gate electrode and the shielding pattern have a spacing of less than about 0.4 μm. The shielding pattern is preferably connected to a voltage lower than a stress voltage applied on the gate electrode.
摘要翻译：高压MOS器件包括覆盖衬底的第一高电压阱（HVW）区域，覆盖衬底的第二HVW区域，与覆盖衬底的第一和第二HVW区域相反的导电类型的第三HVW区域基板，其中所述HVPW区域具有在所述第一HVNW区域和所述第二HVNW区域之间的至少一部分，所述第一HVNW区域中的绝缘区域，所述第二HVNW区域和所述HVPW区域，在所述第一HVNW区域和所述第二HVNW区域之间延伸的栅极电介质 HVNW区域到第二HVNW区域，栅极电介质上的栅极电极以及在绝缘区域上与栅电极电绝缘的屏蔽图案。优选地，栅电极和屏蔽图案具有小于约0.4μm的间隔。屏蔽图案优选地连接到低于施加在栅电极上的应力电压的电压。

3. 发明申请

US20070267693A1 SUPPRESSION OF HOT-CARRIER EFFECTS USING DOUBLE WELL FOR THIN GATE OXIDE LDMOS EMBEDDED IN HV PROCESS 有权
标题翻译：在高压工艺中嵌入薄壁氧化物LDMOS的双载体效应的抑制
公开(公告)号：US20070267693A1
公开(公告)日：2007-11-22
申请号：US11419685
申请日：2006-05-22
申请人： Hsing-Yi Chien , Yu-Chang Jong , Ruey-Hsin Liu , Te-Yin Hsia
发明人： Hsing-Yi Chien , Yu-Chang Jong , Ruey-Hsin Liu , Te-Yin Hsia
IPC分类号： H01L29/76
CPC分类号： H01L29/7835 , H01L21/823892 , H01L27/0922 , H01L29/0653 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/42364 , H01L29/7816
摘要： A semiconductor device includes a first high-voltage well having a first dopant disposed in a semiconductor substrate; a second high-voltage well having a second dopant disposed in the semiconductor substrate, laterally adjacent to the first high-voltage well; a low-voltage well having the second dopant disposed overlying the second high-voltage well; a drain region having the first dopant disposed in the first high-voltage well; a source having the first dopant disposed in the low-voltage well; and a gate disposed on the semiconductor substrate and laterally between the source and the drain, wherein the gate includes a thin gate dielectric and a gate electrode.
摘要翻译：半导体器件包括：第一高电压阱，其具有设置在半导体衬底中的第一掺杂物; 第二高电压阱，具有设置在半导体衬底中的第二掺杂剂，与第一高压阱横向相邻; 具有设置在第二高压井上的第二掺杂剂的低电压阱; 漏极区，其具有设置在所述第一高压阱中的所述第一掺杂物; 具有设置在低压井中的第一掺杂物的源; 以及设置在所述半导体衬底上并且在所述源极和漏极之间的横向的栅极，其中所述栅极包括薄栅极电介质和栅电极。

4. 发明申请

US20050112824A1 Method of forming gate oxide layers with multiple thicknesses on substrate 审中-公开
标题翻译：在衬底上形成多个厚度的栅氧化层的方法
公开(公告)号：US20050112824A1
公开(公告)日：2005-05-26
申请号：US10723794
申请日：2003-11-26
申请人： Yu-Chang Jong , Ruey-Hsin Liu , Yi-Chun Lin , Shun-Liang Hsu , Chen-Bau Wu , Kuo-Ming Wu
发明人： Yu-Chang Jong , Ruey-Hsin Liu , Yi-Chun Lin , Shun-Liang Hsu , Chen-Bau Wu , Kuo-Ming Wu
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/823462 , H01L21/823481
摘要： A method of forming gate dielectric layers with various thicknesses on a substrate. At least a first active region and a second active region are provided on the substrate. A first thermal oxide layer is formed on the substrate. A blanket dielectric layer with a first thickness is deposited overlying the substrate. The dielectric layer and the underlying first thermal oxide layer on the second active region are removed to expose the substrate. A second thermal oxide layer with a second thickness less than the first thickness is formed on the second active region. A first gate is formed on the dielectric layer on the first active region and a second gate is formed on the second thermal oxide layer on the second active region.
摘要翻译：在基板上形成各种厚度的栅极电介质层的方法。至少第一有源区和第二有源区设置在衬底上。在基板上形成第一热氧化层。具有第一厚度的覆盖介电层沉积在衬底上。去除第二有源区上的电介质层和下面的第一热氧化物层以露出衬底。在第二有源区上形成第二厚度小于第一厚度的第二热氧化层。第一栅极形成在第一有源区上的电介质层上，第二栅极形成在第二有源区上的第二热氧化物层上。

5. 发明申请

US20080191291A1 High Voltage CMOS Devices 有权
标题翻译：高压CMOS器件
公开(公告)号：US20080191291A1
公开(公告)日：2008-08-14
申请号：US12100888
申请日：2008-04-10
申请人： Chen-Bau Wu , Chien-Shao Tang , Robin Hsieh , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Chen-Bau Wu , Chien-Shao Tang , Robin Hsieh , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/78
CPC分类号： H01L27/092 , H01L21/823814 , H01L21/823892 , H01L29/0653 , H01L29/0847 , H01L29/0852 , H01L29/1083 , H01L29/7816 , H01L29/7835
摘要： A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that they are not immediately adjacent each other. The well of the first conductivity type and the second conductivity type may be formed simultaneously as respective wells for low-voltage devices. In this manner, the high-voltage devices may be formed on the same wafer as low-voltage devices with fewer process steps, thereby reducing costs and process time. A doped isolation well may be formed adjacent the first well on an opposing side from the second well to provide further device isolation.
摘要翻译：提供了适用于高压应用的晶体管。晶体管形成在具有第一导电类型的深阱的衬底上。形成第一导电类型的第一阱和第二导电类型的第二阱，使得它们不彼此紧邻。第一导电类型和第二导电类型的阱可以同时形成用于低电压装置的各个孔。以这种方式，高压器件可以与具有较少工艺步骤的低电压器件形成在相同的晶片上，从而降低成本和处理时间。可以在与第二阱相对的一侧上邻近第一阱形成掺杂隔离阱以提供进一步的器件隔离。

6. 发明申请

US20050285218A1 Method of forming high voltage devices with retrograde well 有权
标题翻译：用逆行井形成高压装置的方法
公开(公告)号：US20050285218A1
公开(公告)日：2005-12-29
申请号：US10877450
申请日：2004-06-25
申请人： Kuo-Ming Wu , Chen-Bau Wu , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Kuo-Ming Wu , Chen-Bau Wu , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/00 , H01L29/08 , H01L29/78
CPC分类号： H01L29/0847 , H01L29/7835
摘要： A high voltage device with retrograde well is disclosed. The device comprises a substrate, a gate region formed on the substrate, and a retrograde well placed in the substrate next to the gate region, wherein the retrograde well reduces a dopant concentration on the surface of the substrate, thereby minimizing damages to the gate region.
摘要翻译：公开了具有逆行井的高压装置。该器件包括衬底，形成在衬底上的栅极区域和位于栅极区域旁边的衬底中的逆行阱，其中逆行阱降低衬底表面上的掺杂剂浓度，从而最小化对栅极区域的损害。

7. 发明授权

US07915677B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
公开(公告)号：US07915677B2
公开(公告)日：2011-03-29
申请号：US12329285
申请日：2008-12-05
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/78
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.

8. 发明申请

US20090085101A1 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US20090085101A1
公开(公告)日：2009-04-02
申请号：US12329285
申请日：2008-12-05
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.
摘要翻译：提供具有高击穿电压和低导通电阻的半导体器件。一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。晶体管的源极和漏极区位于高压P阱和高压N阱中。可选地，在场电介质下的N阱区域中形成P场环。在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

9. 发明授权

US07476591B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US07476591B2
公开(公告)日：2009-01-13
申请号：US11581178
申请日：2006-10-13
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.
摘要翻译：提供具有高击穿电压和低导通电阻的半导体器件。一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。晶体管的源极和漏极区位于高压P阱和高压N阱中。可选地，在场电介质下的N阱区域中形成P场环。在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

10. 发明申请

US20090001462A1 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US20090001462A1
公开(公告)日：2009-01-01
申请号：US12205961
申请日：2008-09-08
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.
摘要翻译：半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式