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1. 发明授权

US08129783B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US08129783B2
公开(公告)日：2012-03-06
申请号：US12329285
申请日：2008-12-05
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.
摘要翻译：提供具有高击穿电压和低导通电阻的半导体器件。一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。晶体管的源极和漏极区位于高压P阱和高压N阱中。可选地，在场电介质下的N阱区域中形成P场环。在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

2. 发明授权

US07989890B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US07989890B2
公开(公告)日：2011-08-02
申请号：US12205961
申请日：2008-09-08
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.
摘要翻译：半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

3. 发明申请

US20080090347A1 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US20080090347A1
公开(公告)日：2008-04-17
申请号：US11581178
申请日：2006-10-13
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.
摘要翻译：提供具有高击穿电压和低导通电阻的半导体器件。一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。晶体管的源极和漏极区位于高压P阱和高压N阱中。可选地，在场电介质下的N阱区域中形成P场环。在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

4. 发明授权

US08389341B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US08389341B2
公开(公告)日：2013-03-05
申请号：US13175246
申请日：2011-07-01
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.
摘要翻译：半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

5. 发明申请

US20120003803A1 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US20120003803A1
公开(公告)日：2012-01-05
申请号：US13175246
申请日：2011-07-01
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.
摘要翻译：半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

6. 发明授权

US07915677B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
公开(公告)号：US07915677B2
公开(公告)日：2011-03-29
申请号：US12329285
申请日：2008-12-05
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/78
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.

7. 发明申请

US20090085101A1 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US20090085101A1
公开(公告)日：2009-04-02
申请号：US12329285
申请日：2008-12-05
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.
摘要翻译：提供具有高击穿电压和低导通电阻的半导体器件。一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。晶体管的源极和漏极区位于高压P阱和高压N阱中。可选地，在场电介质下的N阱区域中形成P场环。在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

8. 发明授权

US07476591B2 Lateral power MOSFET with high breakdown voltage and low on-resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US07476591B2
公开(公告)日：2009-01-13
申请号：US11581178
申请日：2006-10-13
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor device with high breakdown voltage and low on-resistance is provided. An embodiment comprises a substrate having a buried layer in a portion of the top region of the substrate in order to extend the drift region. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are located over portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gate conductor are formed over the channel region between the high-voltage P-well and the high-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-well region under the field dielectric. In another embodiment, a lateral power superjunction MOSFET with partition regions located in the high-voltage N-well is manufactured with an extended drift region.
摘要翻译：提供具有高击穿电压和低导通电阻的半导体器件。一个实施例包括在衬底的顶部区域的一部分中具有掩埋层的衬底，以便延伸漂移区域。在掩埋层和衬底之上形成层，并且彼此相邻地形成高压N阱和P阱区。场电介质位于高压N阱和P阱的部分上方，并且在高压P阱和高压N阱之间的沟道区上形成栅极电介质和栅极导体。晶体管的源极和漏极区位于高压P阱和高压N阱中。可选地，在场电介质下的N阱区域中形成P场环。在另一个实施例中，具有位于高压N阱中的分配区域的横向功率超结MOSFET被制造为具有延伸漂移区域。

9. 发明申请

US20090001462A1 Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance 有权
标题翻译：具有高击穿电压和低导通电阻的侧向功率MOSFET
公开(公告)号：US20090001462A1
公开(公告)日：2009-01-01
申请号：US12205961
申请日：2008-09-08
申请人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
发明人： Tsung-Yi Huang , Puo-Yu Chiang , Ruey-Hsin Liu , Shun-Liang Hsu , Chyi-Chyuan Huang , Fu-Hsin Chen , Eric Huang
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L29/063 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring in the HVW and occupying a top portion of the HVW, wherein the field ring is of the first conductivity type; an insulation region over and in contact with the field ring and a portion of the HVW; a gate electrode partially over the insulation region; a drain region in the HVW, wherein the drain region is of the second conductivity type; and wherein the HVW horizontally extends further toward the drain region than the pre-HVW; and a source region adjacent to, and on an opposite side of the gate electrode than the drain region.
摘要翻译：半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; HVW中的场环，占据HVW的顶部，其中场环是第一导电类型; 与场环和HVW的一部分接触的绝缘区域; 位于所述绝缘区域上的栅电极; 所述HVW中的漏极区域，其中所述漏极区域是所述第二导电类型; 并且其中所述HVW水平地延伸到所述漏极区域比所述预HVW; 以及与漏极区域相邻并且在与栅极电极相反的一侧的源极区域。

10. 发明授权

US07768071B2 Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devices 有权
标题翻译：通过形成超高压设备的隧道来稳定击穿电压
公开(公告)号：US07768071B2
公开(公告)日：2010-08-03
申请号：US12170285
申请日：2008-07-09
申请人： Eric Huang , Tsung-Yi Huang , Fu-Hsin Chen , Chyi-Chyuan Huang , Puo-Yu Chiang
发明人： Eric Huang , Tsung-Yi Huang , Fu-Hsin Chen , Chyi-Chyuan Huang , Puo-Yu Chiang
IPC分类号： H01L23/62
CPC分类号： H01L29/0847 , H01L21/266 , H01L29/0634 , H01L29/0692 , H01L29/42368 , H01L29/66659 , H01L29/7835 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW; and a tunnel of the first conductivity type in the pre-HVW and the HVW, and electrically connecting the field ring and the semiconductor substrate.
摘要翻译：半导体结构包括第一导电类型的半导体衬底; 在所述半导体衬底中的预高压阱（预HVW），其中所述预HVW具有与所述第一导电类型相反的第二导电类型; 在HVW之前的高压井（HVW），其中HVW是第二导电类型; 第一导电类型的场环占据HVW的顶部; 以及预HVW和HVW中的第一导电类型的隧道，并且电场连接场环和半导体衬底。

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