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1. 发明授权

US06171728B2 Nickel electrode for akaline storage cell and manufacturing method of the same 失效
标题翻译：用于碱性蓄电池的镍电极及其制造方法
公开(公告)号：US06171728B2
公开(公告)日：2001-01-09
申请号：US09110861
申请日：1998-07-07
申请人： Yoshitaka Baba , Motoo Tadokoro , Takayuki Yano
发明人： Yoshitaka Baba , Motoo Tadokoro , Takayuki Yano
IPC分类号： H01M452
CPC分类号： H01M4/52 , H01M4/32 , Y10T29/49115
摘要： A nickel electrode for an alkaline storage cell manufactured by the steps of precipitating cobalt hydroxide on the surface of a first nickel active material essentially composed of nickel hydroxide, subjecting the first nickel active material to heat treatment under the presence of an alkaline solution and oxygen to that the cobalt hydroxide precipitated on the first nickel active material is disordered to its crystal structure and is formed in a higher order cobalt compound containing alkaline cation, and mixing the first nickel active material subjected to the alkali heat treatment with a second nickel hydroxide active material essentially composed of nickel hydroxide without forming any conductive substance of lower in dissolubility to the alkaline solution.
摘要翻译：一种碱性蓄电池用镍电极，其特征在于，在基本上由氢氧化镍构成的第一镍活性物质的表面析出氢氧化钴，在碱溶液和氧气的存在下进行第一镍活性物质的热处理，沉淀在第一镍活性材料上的氢氧化钴无定形为其晶体结构，并且形成为含有碱性阳离子的较高级的钴化合物，并将进行碱热处理的第一镍活性材料与第二氢氧化镍活性物质基本上由氢氧化镍组成，而不形成对碱性溶液具有较低溶解度的任何导电物质。

2. 发明授权

US06203945B1 Nickel hydroxide active material for use in alkaline storage cell and manufacturing method of the same 失效
标题翻译：用于碱性蓄电池的氢氧化镍活性物质及其制造方法
公开(公告)号：US06203945B1
公开(公告)日：2001-03-20
申请号：US09109070
申请日：1998-07-02
申请人： Yoshitaka Baba , Motoo Tadokoro , Takayuki Yano
发明人： Yoshitaka Baba , Motoo Tadokoro , Takayuki Yano
IPC分类号： H01M432
CPC分类号： H01M4/52
摘要： A nickel hydroxide active material for use in an alkaline storage cell, the active material being essentially composed of nickel hydroxide particles covered with a cobalt compound adhered to their surfaces, wherein the cobalt compound is disordered in a crystal structure and formed in a higher order state containing alkali cation, and wherein the nickel hydroxide is in the form of a higher order nickel compound having an average oxidation value of 2.15 to 2.40.
摘要翻译：一种用于碱性蓄电池的氢氧化镍活性物质，所述活性物质基本上由附着在其表面上的钴化合物覆盖的氢氧化镍颗粒组成，其中所述钴化合物在晶体结构中无序并形成为高级态含有碱金属阳离子，其中氢氧化镍为平均氧化值为2.15〜2.40的高级镍化合物的形式。

3. 发明申请

US20120052344A1 Battery 审中-公开
标题翻译：电池
公开(公告)号：US20120052344A1
公开(公告)日：2012-03-01
申请号：US13217976
申请日：2011-08-25
申请人： Tatsuya Nagai , Koji Izumi , Satoshi Wada , Takayuki Yano
发明人： Tatsuya Nagai , Koji Izumi , Satoshi Wada , Takayuki Yano
IPC分类号： H01M10/42 , H01M2/06 , H01M2/30 , H01M10/02
CPC分类号： H01M2/34 , H01M2/348 , H01M10/4257 , H01M2200/106
摘要： An internal resistance is maintained equal to or lower than 70 mΩ, and that a temperature rise of a battery during an external short circuit at an ambient temperature of 23° C. with a margin of error of plus or minus 2° C. does not exceed 45° C.
摘要翻译：内部电阻保持等于或低于70mΩ和OHgr，并且在23°C的环境温度下的外部短路期间电池的温度上升具有正或负2°C的误差裕度。不超过45℃

4. 发明申请

US20100193387A1 ELECTRON BEAM STERILIZATION METHOD 有权
标题翻译：电子束灭菌方法
公开(公告)号：US20100193387A1
公开(公告)日：2010-08-05
申请号：US12671270
申请日：2008-08-01
申请人： Yasuko Sato , Ryo Komura , Takayuki Yano , Toshinori Koizumi
发明人： Yasuko Sato , Ryo Komura , Takayuki Yano , Toshinori Koizumi
IPC分类号： A61B19/02 , A61L2/08
CPC分类号： A61L2/087 , A61L2202/24 , A61M1/168 , A61M1/1682 , A61M2209/06 , B01D63/02 , B01D65/022 , B01D67/009 , B01D67/0097 , B01D2321/00
摘要： [PROBLEMS] To provide an efficient sterilization method for inexpensively sterilizing a medical article having a complex shape such as a body fluid treatment device of a generally-called dry or semi-dry type by so applying an electron beam that the overall absorbed dose distribution is small and to provide its application package form. [MEANS FOR SOLVING PROBLEMS] A method for sterilizing tubular body fluid treatment devices of a dry or semi-dry type contained in an electron beam-transmitting case with an electron beam. The method is characterized in that a stack structure which includes a gap layer having an average density of 0.010 to 0.180 g/cm3 and two body fluid treatment device layers having an average density of 0.050 to 0.200 g/cm3 and sandwiching the gap layer is contained in the electron beam-transmitting case, and the case is irradiated with the electron beam.
摘要翻译：本发明提供一种有效的消毒方法，通过施加电子束，对总体吸收剂量分布为1〜10的电子束，对具有复杂形状的医疗制品进行廉价消毒，例如通常称为干或半干型的体液处理装置并提供其应用程序包形式。解决问题的手段一种包含在具有电子束的电子束透射壳中的干燥或半干燥型的管状体液处理装置的消毒方法。该方法的特征在于，包含平均密度为0.010〜0.180g / cm 3的间隙层和平均密度为0.050〜0.200g / cm 3的两个体液处理装置层并夹持间隙层的堆叠结构在电子束透射的情况下，用电子束照射该情况。

5. 发明授权

US06682848B1 Alkaline storage battery and process for the production thereof 有权
标题翻译：碱性蓄电池及其生产方法
公开(公告)号：US06682848B1
公开(公告)日：2004-01-27
申请号：US09669572
申请日：2000-09-26
申请人： Takayuki Yano , Masao Takee , Akifumi Yamawaki
发明人： Takayuki Yano , Masao Takee , Akifumi Yamawaki
IPC分类号： H01M1024
CPC分类号： H01M4/742 , H01M4/70 , H01M4/745 , H01M4/808
摘要： A porous metal material 10 was filled with an active material slurry, dried, and then rolled to a predetermined thickness. This rolling causes pores 11 formed by a network skeleton to be stretched in the rolling direction (direction represented by the arrow in FIG. 1(a)) to form pores 12 having a shape similar to ellipsoid or deformed ellipsoid having a long axis. Subsequently, the porous metal material was cut in such an arrangement that the longitudinal direction of the pores 12 having a shape similar to ellipsoid or deformed ellipsoid coincides with the crosswise direction of the electrode plate, and then subjected to roller treatment through a series of rollers in the longitudinal direction of the electrode plate. This roller treatment causes numerous cracks 14 to be formed at a very small pitch in the direction parallel to the rolling direction as shown diagrammatically in FIG. 1(c).
摘要翻译：多孔金属材料10填充有活性材料浆料，干燥，然后轧制至预定厚度。该轧制使得由网状骨架形成的孔11在轧制方向（图1（a）中的箭头所示的方向）上拉伸，以形成具有与具有长轴的椭圆体或变形椭圆体相似的形状的孔12。随后，将多孔金属材料切割成具有类似于椭圆形或变形椭圆体的形状的孔12的纵向方向与电极板的横向重合，然后通过一系列辊进行辊式处理在电极板的纵向上。这种辊子处理使得在与轧制方向平行的方向上以非常小的间距形成许多裂缝14，如图1所示。 1（c）。

6. 发明授权

US5534446A Process for producing buried insulator layer in semiconductor substrate 失效
标题翻译：在半导体衬底中制造掩埋绝缘体层的工艺
公开(公告)号：US5534446A
公开(公告)日：1996-07-09
申请号：US534169
申请日：1995-09-26
申请人： Masaharu Tachimori , Takayuki Yano , Yasuo Tsumori , Tatsuo Nakajima , Isao Hamaguchi
发明人： Masaharu Tachimori , Takayuki Yano , Yasuo Tsumori , Tatsuo Nakajima , Isao Hamaguchi
IPC分类号： H01L21/02 , H01L21/265 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76243 , H01L21/26533 , Y10S438/909
摘要： A process for producing a semiconductor substrate, including the phases of implanting oxygen ions into a semiconductor silicon substrate through one surface thereof to form a high oxygen concentration layer in the semiconductor silicon substrate, and then heat-treating the semiconductor substrate to cause a chemical reaction to occur between the implanted oxygen ions and the silicon, thereby forming an insulating silicon oxide film in the semiconductor silicon substrate, wherein the heat treatment phase includes at least a heat treatment step using an atmosphere having an oxygen partial pressure of 5.times.10.sup.3 Pa or more.The process is advantageously used to produce a high quality SOI semiconductor substrate in which the number of the defects providing a path for current leakage is reduced, the buried oxide layer has an improved dielectric breakdown strength, the interface between the buried oxide film and the adjoining silicon layers has a small roughness, and the buried oxide film can be produced with a wider range of thickness.
摘要翻译：一种制造半导体衬底的方法，包括通过其一个表面将氧离子注入到半导体硅衬底中以在半导体硅衬底中形成高氧浓度层的相，然后对半导体衬底进行热处理以引起化学反应发生在注入的氧离子和硅之间，从而在半导体硅衬底中形成绝缘氧化硅膜，其中热处理阶段至少包括使用氧分压为5×10 3 Pa以上的气氛的热处理工序。该方法有利地用于制造高质量的SOI半导体衬底，其中提供漏电路径的缺陷数量减少，掩埋氧化物层具有改善的介电击穿强度，掩埋氧化膜与邻接层之间的界面硅层具有较小的粗糙度，并且能够以较宽的厚度范围制造掩埋氧化膜。

7. 发明授权

US08704543B2 Test head moving apparatus and electronic component testing apparatus 有权
标题翻译：测试头移动装置和电子部件测试装置
公开(公告)号：US08704543B2
公开(公告)日：2014-04-22
申请号：US13003953
申请日：2008-07-14
申请人： Takayuki Yano
发明人： Takayuki Yano
IPC分类号： G01R31/00
CPC分类号： G01R31/2887
摘要： A test head moving apparatus includes elevating arms that move a test head up and down, a frame that horizontally moves the test head, and an interlock mechanism that prohibits the horizontal movement of the frame on the basis of a height of the test head. The interlock mechanism has a limit switch that detects that the test head is positioned at the lowermost limit and stoppers capable of pressing the pressing units onto a floor plane.
摘要翻译：测试头移动装置包括使测试头上下移动的升降臂，水平移动测试头的框架，以及基于测试头的高度来禁止框架的水平移动的互锁机构。联锁机构具有检测出测试头位于最低限度的限位开关和能够将按压单元按压到地板平面上的挡块。

8. 发明授权

US08648617B2 Semiconductor device and method of testing semiconductor device 有权
标题翻译：半导体器件及半导体器件的测试方法
公开(公告)号：US08648617B2
公开(公告)日：2014-02-11
申请号：US13022174
申请日：2011-02-07
申请人： Yuji Maruyama , Tatsuhiro Mizumasa , Takayuki Nakashiro , Shigeru Gotoh , Takayuki Yano , Susumu Koshinuma , Shunsuke Taniguchi , Yuki Yanagisako
发明人： Yuji Maruyama , Tatsuhiro Mizumasa , Takayuki Nakashiro , Shigeru Gotoh , Takayuki Yano , Susumu Koshinuma , Shunsuke Taniguchi , Yuki Yanagisako
IPC分类号： G01R31/26
CPC分类号： G01R31/2884 , H01L22/32 , H01L2224/02166 , H01L2224/05554 , H01L2924/13091 , H01L2924/00
摘要： According to the following disclosure, disclosed is a semiconductor device including: an internal circuit configured to receive and output a signal current; a current mirror unit outputting a copied current corresponding to the signal current; and a test pad from which the copied current is taken out.
摘要翻译：根据以下公开，公开了一种半导体器件，包括：内部电路，被配置为接收和输出信号电流; 输出与信号电流对应的复制电流的电流镜单元; 以及从其中取出复制的电流的测试垫。

9. 发明申请

US20110221466A1 SEMICONDUCTOR DEVICE AND METHOD OF TESTING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和测试半导体器件的方法
公开(公告)号：US20110221466A1
公开(公告)日：2011-09-15
申请号：US13022174
申请日：2011-02-07
申请人： Yuji MARUYAMA , Tatsuhiro Mizumasa , Takayuki Nakashiro , Shigeru Gotoh , Takayuki Yano , Susumu Koshinuma , Shunsuke Taniguchi , Yuki Yanagisako
发明人： Yuji MARUYAMA , Tatsuhiro Mizumasa , Takayuki Nakashiro , Shigeru Gotoh , Takayuki Yano , Susumu Koshinuma , Shunsuke Taniguchi , Yuki Yanagisako
IPC分类号： G01R31/26 , H01L23/58
CPC分类号： G01R31/2884 , H01L22/32 , H01L2224/02166 , H01L2224/05554 , H01L2924/13091 , H01L2924/00
摘要： According to the following disclosure, disclosed is a semiconductor device including: an internal circuit configured to receive and output a signal current; a current mirror unit outputting a copied current corresponding to the signal current; and a test pad from which the copied current is taken out.
摘要翻译：根据以下公开，公开了一种半导体器件，包括：内部电路，被配置为接收和输出信号电流; 输出与信号电流对应的复制电流的电流镜单元; 以及从其中取出复制的电流的测试垫。

10. 发明授权

US08018702B2 Power supply abnormality detection circuit for on-vehicle electronic control device 有权
标题翻译：车载电子控制装置用电源异常检测电路
公开(公告)号：US08018702B2
公开(公告)日：2011-09-13
申请号：US12267225
申请日：2008-11-07
申请人： Tetsuo Maeda , Masaharu Yuhara , Masahide Fujita , Michihiro Takata , Takayuki Yano , Daisuke Yase
发明人： Tetsuo Maeda , Masaharu Yuhara , Masahide Fujita , Michihiro Takata , Takayuki Yano , Daisuke Yase
IPC分类号： H02H3/00
CPC分类号： B60R16/03 , G01R31/007
摘要： The on-vehicle electronic control device includes a main power supply circuit fed with power from an on-vehicle battery through an output contact of a power supply relay and a main power supply terminal of a connector to supply a stabilized control voltage to a microprocessor. When contact failure occurs in the main power supply terminal, the main power supply circuit is fed with bypass power from the output contact through a first electrical load and a commutation diode to perform the one of the report of the abnormality and the storage of the abnormality occurrence history information. A bypass power fed state is detected when an input voltage to the main power supply circuit is lower than a power supply voltage of the on-vehicle battery.
摘要翻译：车载电子控制装置包括通过电源继电器的输出触点和连接器的主电源端子从车载电池供电的主电源电路，以向微处理器提供稳定的控制电压。当主电源端子发生接触故障时，主电源电路通过第一电负载和换向二极管从输出触点馈送旁路电源，以执行异常报告和异常存储之一发生历史信息。当对主电源电路的输入电压低于车载电池的电源电压时，检测旁路供电状态。

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