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1. 发明授权

US5534446A Process for producing buried insulator layer in semiconductor substrate 失效
标题翻译：在半导体衬底中制造掩埋绝缘体层的工艺
公开(公告)号：US5534446A
公开(公告)日：1996-07-09
申请号：US534169
申请日：1995-09-26
申请人： Masaharu Tachimori , Takayuki Yano , Yasuo Tsumori , Tatsuo Nakajima , Isao Hamaguchi
发明人： Masaharu Tachimori , Takayuki Yano , Yasuo Tsumori , Tatsuo Nakajima , Isao Hamaguchi
IPC分类号： H01L21/02 , H01L21/265 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76243 , H01L21/26533 , Y10S438/909
摘要： A process for producing a semiconductor substrate, including the phases of implanting oxygen ions into a semiconductor silicon substrate through one surface thereof to form a high oxygen concentration layer in the semiconductor silicon substrate, and then heat-treating the semiconductor substrate to cause a chemical reaction to occur between the implanted oxygen ions and the silicon, thereby forming an insulating silicon oxide film in the semiconductor silicon substrate, wherein the heat treatment phase includes at least a heat treatment step using an atmosphere having an oxygen partial pressure of 5.times.10.sup.3 Pa or more.The process is advantageously used to produce a high quality SOI semiconductor substrate in which the number of the defects providing a path for current leakage is reduced, the buried oxide layer has an improved dielectric breakdown strength, the interface between the buried oxide film and the adjoining silicon layers has a small roughness, and the buried oxide film can be produced with a wider range of thickness.
摘要翻译：一种制造半导体衬底的方法，包括通过其一个表面将氧离子注入到半导体硅衬底中以在半导体硅衬底中形成高氧浓度层的相，然后对半导体衬底进行热处理以引起化学反应发生在注入的氧离子和硅之间，从而在半导体硅衬底中形成绝缘氧化硅膜，其中热处理阶段至少包括使用氧分压为5×10 3 Pa以上的气氛的热处理工序。该方法有利地用于制造高质量的SOI半导体衬底，其中提供漏电路径的缺陷数量减少，掩埋氧化物层具有改善的介电击穿强度，掩埋氧化膜与邻接层之间的界面硅层具有较小的粗糙度，并且能够以较宽的厚度范围制造掩埋氧化膜。

2. 发明授权

US5918151A Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same 失效
标题翻译：半导体基板的制造方法及其制造装置
公开(公告)号：US5918151A
公开(公告)日：1999-06-29
申请号：US666287
申请日：1996-06-21
申请人： Masaharu Tachimori , Takayuki Yano , Isao Hamaguchi , Tatsuo Nakajima
发明人： Masaharu Tachimori , Takayuki Yano , Isao Hamaguchi , Tatsuo Nakajima
IPC分类号： H01L21/76 , H01L21/02 , H01L21/265 , H01L27/12 , H01J37/317
CPC分类号： H01L21/26533
摘要： A method for manufacturing an SOI semiconductor substrate and a manufacturing apparatus therefor in which a mean implantation depth and a dose of each of a series of oxygen ion implantations are continuously or stepwise changed, a depthwise distribution of an oxygen atom concentration has a single peak and uniform in a plane at a predetermined depth, a maximum oxygen atom concentration is preferably no larger than 2.25.times.10.sup.22 atoms/cm.sup.3 and no smaller than 1.0.times.10.sup.22 atoms/cm.sup.3, a total oxygen dose is equal to a desired thickness of a buried oxide film multiplied by 4.48.times.10.sup.22 (in ions/cm.sup.3), and preferably a thermal process at a temperature of 1300.degree. C. or higher is applied after the completion of the oxygen ion implantation to form the buried oxide film.
摘要翻译： PCT No.PCT / JP94 / 02297 Sec。 371日期：1996年6月21日 102（e）日期1996年6月21日PCT 1994年12月28日PCT PCT。 WO95 / 18462 PCT出版物日期1995年7月6日一种用于制造SOI半导体衬底的方法及其制造装置，其中一系列氧离子注入的平均注入深度和剂量连续或逐步改变，氧原子浓度的深度分布在预定深度的平面中具有单一峰均匀，最大氧原子浓度优选不大于2.25×10 22原子/ cm 3且不小于1.0×10 22原子/ cm 3，总氧剂量等于所需厚度埋入氧化膜乘以4.48×1022（离子/ cm 3），优选在1300℃或更高温度下的热处理在氧离子注入完成之后施加以形成掩埋氧化膜。

3. 发明授权

US5373804A Single silicon crystal having low OSF density induced by oxidation and method for production thereof 失效
标题翻译：通过氧化诱导的低OSF密度的单硅晶体及其生产方法
公开(公告)号：US5373804A
公开(公告)日：1994-12-20
申请号：US882242
申请日：1992-05-08
申请人： Masaharu Tachimori , Tadashi Sakon , Takayuki Kaneko , Seizou Meguro
发明人： Masaharu Tachimori , Tadashi Sakon , Takayuki Kaneko , Seizou Meguro
IPC分类号： H01L21/208 , C30B15/00 , C30B15/20 , C30B29/06 , C30B15/02
CPC分类号： C30B29/06 , C30B15/00
摘要： A single silicon crystal wafer produced by the Czochvalski method and measuring not less than 100 mm in diameter, a single silicon crystal having low OSF density induced by oxidation, wherein regarding the local resistivity measured by the spread resistance method on the surface of said wafer subjected in advance to a heat treatment for extinction of oxygen donor, the proportion of the number of points of measurement registering errors exceeding .+-.1.0% of the mean value is not more than 35% of the total number of points of measurement, and regarding the distribution of oxygen concentration in solid solution in the wafer surface, the difference between the maximum and the minimum is not more than 2.0% of the maximum, and a method for production thereof.
摘要翻译：通过Czochvalski法生产的单晶硅晶片，直径不小于100mm，由氧化引起的OSF密度低的单一硅晶体，其中通过扩展电阻法在所述晶片的表面上测得的局部电阻率提前进行氧供体灭绝的热处理时，超过平均值的+/- 1.0％的测量点数误差的比例不超过总测量点的35％，并且关于在晶片表面的固溶体中的氧浓度的分布，最大值与最小值之间的差别不大于最大值的2.0％及其制造方法。

4. 发明授权

US5189508A Silicon wafer excelling in gettering ability and method for production thereof 失效
标题翻译：吸水性优异的硅晶片及其制造方法
公开(公告)号：US5189508A
公开(公告)日：1993-02-23
申请号：US784628
申请日：1991-10-31
申请人： Masaharu Tachimori , Kazunori Ishizaka , Hideo Araki
发明人： Masaharu Tachimori , Kazunori Ishizaka , Hideo Araki
IPC分类号： H01L21/322
CPC分类号： H01L21/3221 , Y10S257/913
摘要： A silicon wafer comprising a substrate of single crystal silicon, a silicon oxide film 1 to 8 .ANG. in thickness formed on one surface of said substrate, and a polysilicon layer formed on said silicon oxide film and possessing an excellent gettering ability, is prepared by oxidizing single crystal silicon, thereby forming a silicon oxide film 1 to 8 .ANG. in thickness on said surface, and exposing said silicon oxide film to a gaseous silane at an elevated temperature, thereby forming a polysilicon layer on said silicon oxide film.
摘要翻译：通过氧化制备包括单晶硅衬底的硅晶片，形成在所述衬底的一个表面上的厚度为1至8的氧化硅膜和形成在所述氧化硅膜上并具有优异吸气能力的多晶硅层从而在所述表面上形成厚度为1至8的氧化硅膜，并在高温下将所述氧化硅膜暴露于气态硅烷，从而在所述氧化硅膜上形成多晶硅层。

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