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1. 发明授权

US06802753B1 METHOD FOR MANUFACTURING ELECTRON BEAM DEVICE, METHOD FOR MANUFACTURING IMAGE FORMING APPARATUS, ELECTRON BEAM DEVICE AND IMAGE FORMING APPARATUS MANUFACTURED THOSE MANUFACTURING METHODS, METHOD AND APPARATUS FOR MANUFACTURING ELECTRON SOURCE, AND APPARATUS FOR MANUFACTURING IMAGE FORMING APPARATUS 失效
标题翻译：用于制造电子束装置的方法，用于制造图像形成装置的方法，电子束装置和制造装置的图像形成装置的制造方法，用于制造电子源的方法和装置以及用于制造图像形成装置的装置
公开(公告)号：US06802753B1
公开(公告)日：2004-10-12
申请号：US09722454
申请日：2000-11-28
申请人： Yoichi Ando , Keisuke Yamamoto , Hideshi Kawasaki , Tamaki Kobayashi , Satoshi Mogi , Akira Hayama
发明人： Yoichi Ando , Keisuke Yamamoto , Hideshi Kawasaki , Tamaki Kobayashi , Satoshi Mogi , Akira Hayama
IPC分类号： H01J900
CPC分类号： H01J9/027 , H01J2209/0223
摘要： In a manufacturing process of an image forming apparatus (electron beam device) using electron emission elements, particularly, surface conduction type electron emission elements, wirings on an electron source substrate on which the wirings and element electrodes are formed are opposite to electrodes for a face plate, and a given voltage is applied between the wirings and the electrodes to thereby generate a discharge phenomenon in advance, thus removing a protrusion or the like. In this way, when an electric field applying process is conducted on the electron source substrate, a factor such as a protrusion in an electron source which induces a discharge phenomenon in driving an electron beam device represented by an image forming apparatus is removed, thus realizing an image forming apparatus excellent in display characteristic with no defective pixel even in image display for a long period of time.
摘要翻译：在使用电子发射元件，特别是表面传导型电子发射元件的图像形成装置（电子束装置）的制造方法中，形成有布线和元件电极的电子源基板上的布线与面对的电极相对并且在布线和电极之间施加给定的电压，从而预先产生放电现象，从而去除突起等。以这种方式，当在电子源基板上进行电场施加处理时，去除了在驱动由图像形成装置表示的电子束装置中引起放电现象的电子源中的突起等因素，从而实现即使在长时间的图像显示中，也不会出现缺陷像素的显示特性优异的图像形成装置。

2. 发明申请

US20100060141A1 ELECTRON BEAM DEVICE AND IMAGE DISPLAY APPARATUS USING THE SAME 审中-公开
标题翻译：电子束装置和使用其的图像显示装置
公开(公告)号：US20100060141A1
公开(公告)日：2010-03-11
申请号：US12553727
申请日：2009-09-03
申请人： Ouichi Kubota , Noritake Suzuki , Hideshi Kawasaki , Tamaki Kobayashi , Toshihiko Takeda
发明人： Ouichi Kubota , Noritake Suzuki , Hideshi Kawasaki , Tamaki Kobayashi , Toshihiko Takeda
IPC分类号： H01J1/62 , H01J1/02
CPC分类号： H01J1/316 , H01J1/3046 , H01J31/127 , H01J2201/30423 , H01J2201/3165 , H01J2329/0423 , H01J2329/0489
摘要： In an electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion 30 positioned astride the outer surface of the insulating member and the inner surface of the recess portion formed in the insulating member, and the gate including a layered structure of at least two electroconductive layers. A thermal expansion coefficient of the electroconductive layer which is arranged at a part facing to the protrusion is larger than that of the other electroconductive layer.
摘要翻译：在使用电子发射器件的电子束器件中，其中设置有栅极和阴极以夹着形成在绝缘构件上的凹陷区域，电子在撞击栅极之后被散射，然后被抽出，使得可以容易地获得稳定的电子发射特性，并且即使当产生过多的热量时也防止电子发射器件由于过热而劣化或断裂。电子发射器件包括阴极，其具有跨过绝缘构件的外表面的突起30和形成在绝缘构件中的凹部的内表面，并且栅极包括至少两个导电层的层叠结构。布置在面向突起的部分处的导电层的热膨胀系数大于另一导电层的热膨胀系数。

3. 发明授权

US07189427B2 Manufacturing method of an image forming apparatus 失效
标题翻译：图像形成装置的制造方法
公开(公告)号：US07189427B2
公开(公告)日：2007-03-13
申请号：US10774583
申请日：2004-02-10
申请人： Toshihiko Takeda , Masaru Kamio , Masataka Yamashita , Yasue Sato , Hitoshi Oda , Keisuke Yamamoto , Miki Tamura , Hideshi Kawasaki , Kazuhiro Jindai
发明人： Toshihiko Takeda , Masaru Kamio , Masataka Yamashita , Yasue Sato , Hitoshi Oda , Keisuke Yamamoto , Miki Tamura , Hideshi Kawasaki , Kazuhiro Jindai
IPC分类号： B05D5/06
CPC分类号： H01J9/027
摘要： This invention provides an electron source manufacturing apparatus which can be easily downsized and operated. The electron source manufacturing apparatus includes a support member for supporting a substrate (10) having a conductor (11), a vessel (12) which has a gas inlet port (15) and a gas exhaust port (16) and covers a partial region of the surface of the substrate (10); a gas inlet unit (24) connected to the gas inlet port (15) to introduce gas into the vessel, an exhaust unit (26) connected to the gas exhaust port to evacuate the interior of the vessel, and a voltage application unit (32) for applying a voltage to the conductor.
摘要翻译：本发明提供一种电子源制造装置，其可以容易地小型化和操作。电子源制造装置包括用于支撑具有导体（11）的基板（10）的支撑构件，具有气体入口（15）和排气口（16）的容器（12），并且覆盖部分区域的基板（10）的表面; 连接到气体入口（15）以将气体引入容器的气体入口单元（24），连接到排气口以抽空容器内部的排气单元（26），以及电压施加单元（32）），用于向导体施加电压。

4. 发明授权

US06726520B2 Apparatus for producing electron source 失效
标题翻译：用于生产电子源的装置
公开(公告)号：US06726520B2
公开(公告)日：2004-04-27
申请号：US09788411
申请日：2001-02-21
申请人： Toshihiko Takeda , Masaru Kamio , Masataka Yamashita , Yasue Sato , Hitoshi Oda , Keisuke Yamamoto , Miki Tamura , Hideshi Kawasaki , Kazuhiro Jindai
发明人： Toshihiko Takeda , Masaru Kamio , Masataka Yamashita , Yasue Sato , Hitoshi Oda , Keisuke Yamamoto , Miki Tamura , Hideshi Kawasaki , Kazuhiro Jindai
IPC分类号： H01B902
CPC分类号： H01J9/027
摘要： This invention provides an electron source manufacturing apparatus which can be easily downsized and operated. The electron source manufacturing apparatus includes a support member for supporting a substrate (10) having a conductor (11), a vessel (12) which has a gas inlet port (15) and a gas exhaust port (16) and covers a partial region of the surface of the substrate (10); a gas inlet unit (24) connected to the gas inlet port (15) to introduce gas into the vessel, an exhaust unit (26) connected to the gas exhaust port to evacuate the interior of the vessel, and a voltage application unit (32) for applying a voltage to the conductor.
摘要翻译：本发明提供一种电子源制造装置，其可以容易地小型化和操作。电子源制造装置包括用于支撑具有导体（11）的基板（10）的支撑构件，具有气体入口（15）和排气口（16）的容器（12），并且覆盖部分区域的基板（10）的表面; 连接到气体入口（15）以将气体引入容器的气体入口单元（24），连接到排气口以抽空容器内部的排气单元（26），以及电压施加单元（32）），用于向导体施加电压。

5. 发明授权

US5239190A Light emitting device and method for manufacturing the same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US5239190A
公开(公告)日：1993-08-24
申请号：US975162
申请日：1992-11-12
申请人： Hideshi Kawasaki
发明人： Hideshi Kawasaki
IPC分类号： H01L33/00 , H01L33/10 , H01L33/46 , H01S5/183
CPC分类号： H01L33/10 , H01L33/0066 , H01S5/18369 , H01L33/465 , H01S2304/04 , H01S5/18341
摘要： A light emitting device comprises a substrate, a reflection mirror formed on the substrate, the reflection mirror comprising alternate lamination of amorphous or polycrystalline layers, having refractive indices different from each other; a crystal formation plane formed on the reflection mirror, the crystal formation plane comprising a nucleus non-formation plane having a low nucleus formation density and a nucleus formation plane disposed adjacent to the nucleus non-formation plane and having a higher nucleus formation density than that of said nucleus non-formation plane and a sufficiently small area to allow growth of a crystal thereon by only a single nucleus, and a light emitting area of single crystal formed on the crystal formation plane.
摘要翻译：发光装置包括基板，形成在基板上的反射镜，反射镜包括具有彼此不同的折射率的非晶或多晶层的交替叠层; 在反射镜上形成的晶体形成平面，该晶体形成平面包括具有低核形成密度的核非形成平面和邻近核非形成平面设置的具有较高核形成密度的核形成面，并且具有比其更高的核形成密度的所述核非形成平面，并且具有足够小的面积以允许仅通过单个核在其上生长晶体，并且在晶体形成面上形成单晶的发光区域。

6. 发明授权

US06313571B1 Electron source and image-forming apparatus 失效
标题翻译：电子源和图像形成装置
公开(公告)号：US06313571B1
公开(公告)日：2001-11-06
申请号：US09275437
申请日：1999-03-24
申请人： Mitsutoshi Hasegawa , Yoshiyuki Osada , Hisaaki Kawade , Yuji Kasanuki , Hideshi Kawasaki , Yoshimasa Okamura
发明人： Mitsutoshi Hasegawa , Yoshiyuki Osada , Hisaaki Kawade , Yuji Kasanuki , Hideshi Kawasaki , Yoshimasa Okamura
IPC分类号： H01J102
CPC分类号： H01J1/316 , H01J31/127
摘要： An electron source comprises a substrate, at least one row-directional wire, at least one column-directional wire intersecting the row-directional wire, at least one insulation layer arranged at the intersection of the row-directional wire and the column-directional wire, and at least one conductive film having an electron-emitting region also arranged at the intersection. The insulation layer is arranged between the row-directional wire and the column-directional wire and the conductive film is connected to both wires.
摘要翻译：电子源包括基板，至少一个行方向导线，与行向导线相交的至少一个列方向导线，布置在行向导线和列方向线之间的至少一个绝缘层并且至少一个具有电子发射区的导电膜也布置在相交处。绝缘层布置在行方向导线和列方向导线之间，并且导电膜连接到两条导线。

7. 发明授权

US5243200A Semiconductor device having a substrate recess forming semiconductor regions 失效
标题翻译：具有形成半导体区域的衬底记忆的半导体器件
公开(公告)号：US5243200A
公开(公告)日：1993-09-07
申请号：US795805
申请日：1991-11-21
申请人： Hideshi Kawasaki , Hiroyuki Tokunaga
发明人： Hideshi Kawasaki , Hiroyuki Tokunaga
IPC分类号： H01L21/02 , H01L21/20 , H01L21/205 , H01L21/329 , H01L21/36 , H01L21/76 , H01L27/12 , H01L33/00 , H01L33/16 , H01L33/30 , H01L33/34 , H01L33/40
CPC分类号： H01L33/0066 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02532 , H01L21/02538 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02645 , H01L2924/0002
摘要： A semiconductor device comprises a substrate, a recess formed on the substrate, a first conductive type semiconductor region and a second conductive type semiconductor region having an opposite conductive type to the first conductive type formed in the recess formed on the substrate, and wiring portions, wherein the surfaces of the substrate, the first conductive type semiconductor region and the second conductive type semiconductor region and are continuously on one plane, and the wiring portions connected respectively to the first conductive type semiconductor region and the second conductive type semiconductor region are formed on and in contact with the plane and are all substantially on the same plane and electrically independent from each other.

8. 发明授权

US06878027B1 Method for producing electron source, electron source produced thereby, method for producing image forming apparatus and image forming apparatus produced thereby 失效
标题翻译：用于制造电子源的方法，由此产生的电子源，由此制造的图像形成装置和图像形成装置的制造方法
公开(公告)号：US06878027B1
公开(公告)日：2005-04-12
申请号：US09512360
申请日：2000-02-24
申请人： Hideshi Kawasaki
发明人： Hideshi Kawasaki
IPC分类号： H01J9/02 , H01J9/00
CPC分类号： H01J9/027 , H01J2201/3165
摘要： A method for producing an electron source in which plural electron emission devices are connected in a matrix by plural row wirings and plural column wirings, the row wirings of a number m(=a×b×c) are divided into groups G1 to Ga of a number a, and the row wirings in each group are divided into sub groups SG1 to SGb of a number b, each containing the row wirings of a number c. The deposition process is executed by voltage application by selecting the row wirings of SG1 in succession and commonly to all the groups, and such deposition process is thereafter similarly executed on the sub groups starting from SG2, whereby the deposition process for all the elements is executed by executing the deposition process for each sub group by b times.
摘要翻译：一种电子源的制造方法，其中多个电子发射器件通过多个行布线和多个列布线以矩阵方式连接，数量m（= axbxc）的行布线被划分为数个a的组G1至Ga，并且每组中的行布线被划分为数字b的子组SG1至SGb，每个子组包含数量为c的行布线。沉积过程通过连续选择SG1的行布线并且共同地对所有组施加电压来执行，然后这样的沉积处理在从SG2开始的子组上类似地执行，由此执行所有元件的沉积处理通过对每个子组执行b次沉积处理。

9. 发明授权

US06409566B1 Method of manufacturing an electron source and image forming apparatus using the same 失效
标题翻译：电子源的制造方法及使用其的成像装置
公开(公告)号：US06409566B1
公开(公告)日：2002-06-25
申请号：US09945619
申请日：2001-09-05
申请人： Mitsutoshi Hasegawa , Yoshiyuki Osada , Hisaaki Kawade , Yuji Kasanuki , Hideshi Kawasaki , Yoshimasa Okamura
发明人： Mitsutoshi Hasegawa , Yoshiyuki Osada , Hisaaki Kawade , Yuji Kasanuki , Hideshi Kawasaki , Yoshimasa Okamura
IPC分类号： H01J900
CPC分类号： H01J1/316 , H01J31/127
摘要： An electron source comprises a substrate, at least one row-directional wire, at least one column-directional wire intersecting the row-directional wire, at least one insulation layer arranged at the intersection of the row-directional wire and the column-directional wire, and at least one conductive film having an electron-emitting region also arranged at the intersection. The insulation layer is arranged between the row-directional wire and the column-directional wire and the conductive film is connected to both wires.
摘要翻译：电子源包括基板，至少一个行方向导线，与行向导线相交的至少一个列方向导线，布置在行向导线和列方向线之间的至少一个绝缘层并且至少一个具有电子发射区的导电膜也布置在相交处。绝缘层布置在行方向导线和列方向导线之间，并且导电膜连接到两条导线。

10. 发明授权

US5659184A III-V compound semiconductor device with a polycrystalline structure with minimum grain size of 0.6 .mu.m and printer and display device utilizing the same 失效
标题翻译：具有最小晶粒度为0.6μm的多晶结构的III-V族化合物半导体器件和利用其的打印机和显示装置
公开(公告)号：US5659184A
公开(公告)日：1997-08-19
申请号：US262772
申请日：1994-06-20
申请人： Hiroyuki Tokunaga , Hideshi Kawasaki
发明人： Hiroyuki Tokunaga , Hideshi Kawasaki
IPC分类号： B41J2/45 , C30B25/18 , H01L21/20 , H01L21/205 , H01L27/15 , H01L33/00 , H01L33/18
CPC分类号： H01L33/18 , B41J2/45 , C30B25/18 , H01L21/0237 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L27/156 , H01L33/0066 , H01L2924/0002
摘要： A III-V compound semiconductor device comprises the use of a compound semiconductor of groups III-V of the periodic table with a polycrystalline structure of an average grain size of 0.6 .mu.m or larger.
摘要翻译： III-V族化合物半导体器件包括使用具有0.6μm或更大的平均晶粒尺寸的多晶结构的元素周期表III-V族化合物半导体。

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