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1. 发明申请

US20070279404A1 SEMICONDUCTOR INTEGRATED CIRCUIT, LIQUID CRYSTAL DRIVE DEVICE, AND LIQUID CRYSTAL DISPLAY SYSTEM 审中-公开
公开(公告)号：US20070279404A1
公开(公告)日：2007-12-06
申请号：US11833728
申请日：2007-08-03
申请人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
发明人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
IPC分类号： G09G5/00
CPC分类号： G09G3/3688 , G09G3/3611 , G09G3/3696 , G09G2310/027 , G09G2310/0297 , G09G2330/02 , G09G2330/021 , G09G2330/022 , G09G2330/06 , G09G2360/02 , G09G2370/08
摘要： A liquid crystal drive device having a differential-type input circuit including a differential amplification stage for receiving a differential signal and a buffer stage for generating an output signal on the basis of an output of the differential amplification stage, the liquid crystal drive device for receiving a signal of display data via the input circuit and outputting a signal for driving a liquid crystal panel on the basis of the display data, wherein a liquid crystal driving voltage VLCD larger than a power supply voltage VCC for logic to be supplied to the operation voltage buffer stage is supplied to the differential amplification stage of the input circuit. A standby function of interrupting an operation current of the differential amplification stage in a period where no display data is received is provided.

2. 发明申请

US20070279357A1 SEMICONDUCTOR INTEGRATED CIRCUIT, LIQUID CRYSTAL DRIVE DEVICE, AND LIQUID CRYSTAL DISPLAY SYSTEM 审中-公开
公开(公告)号：US20070279357A1
公开(公告)日：2007-12-06
申请号：US11833519
申请日：2007-08-03
申请人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
发明人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
IPC分类号： G09G3/36
CPC分类号： G09G3/3688 , G09G3/3611 , G09G3/3696 , G09G2310/027 , G09G2310/0297 , G09G2330/02 , G09G2330/021 , G09G2330/022 , G09G2330/06 , G09G2360/02 , G09G2370/08
摘要： A liquid crystal drive device having a differential-type input circuit including a differential amplification stage for receiving a differential signal and a buffer stage for generating an output signal on the basis of an output of the differential amplification stage, the liquid crystal drive device for receiving a signal of display data via the input circuit and outputting a signal for driving a liquid crystal panel on the basis of the display data, wherein a liquid crystal driving voltage VLCD larger than a power supply voltage VCC for logic to be supplied to the operation voltage buffer stage is supplied to the differential amplification stage of the input circuit. A standby function of interrupting an operation current of the differential amplification stage in a period where no display data is received is provided.

3. 发明授权

US5173955A Magnetooptic device and its driving method 失效
标题翻译：磁光装置及其驱动方法
公开(公告)号：US5173955A
公开(公告)日：1992-12-22
申请号：US658328
申请日：1991-02-20
申请人： Masamichi Yamanishi , Hitoshi Oda
发明人： Masamichi Yamanishi , Hitoshi Oda
IPC分类号： G02F1/095 , G11B11/105 , G11C7/00 , H01S5/026
CPC分类号： G11C7/005 , G02F1/0955 , G11B11/10584 , G11B11/10589 , H01S5/026
摘要： There is provided a magnetooptic device including a substrate; a semiconductor layer having a quantum well structure formed on the substrate, in which the semiconductor layer is formed by alternately laminating a well layer and a barrier layer and at least the barrier layer in those layers contains magnetic ions; and electrodes to apply an electric field to the semiconductor layer. A light which was polarized in a predetermined direction is input to the semiconductor layer. A magnetic field is applied to the semiconductor layer. An electric field is applied to the semiconductor layer by the electrodes. The light which was transmitted in the semiconductor layer is extracted. A degree of leakage of a wave function of the carrier in the well layer into the barrier layer changes. An effective magnetic field which a carrier spin feels changes by an exchange interaction between the carrier spin and a magnetic moment associated with the magnetic ions. Thus, a degree of magnetooptic effect which is given to the transmission light changes. The degree of manetooptic effect can be controlled by the applied electric field. The magnetooptic device is preferably used as an optical modulator or an optical isolator in the field of optical communications or optical memories.
摘要翻译：提供了包括基板的磁光装置; 在衬底上形成有量子阱结构的半导体层，其中半导体层通过交替层叠阱层和阻挡层而形成，并且至少这些层中的势垒层包含磁离子; 以及向半导体层施加电场的电极。沿预定方向极化的光被输入到半导体层。对半导体层施加磁场。通过电极将电场施加到半导体层。提取在半导体层中透过的光。阱层中的载流子的波函数的泄漏程度变化。通过载流子自旋与与磁离子相关的磁矩之间的交换相互作用，载流子自旋感觉到的有效磁场变化。因此，给予透射光的磁光效应程度改变。电磁效应的程度可以通过施加的电场来控制。磁光装置优选地用作光通信或光存储器领域中的光调制器或光隔离器。

4. 发明授权

US4587178A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4587178A
公开(公告)日：1986-05-06
申请号：US401967
申请日：1982-07-26
申请人： Shigeo Shimizu , Toshio Kato , Hitoshi Oda , Masanobu Shigeta
发明人： Shigeo Shimizu , Toshio Kato , Hitoshi Oda , Masanobu Shigeta
IPC分类号： C25D7/00 , C23C14/06 , C23C14/14 , C23C28/02 , G11B3/70 , G11B5/66 , G11B5/84 , G11B5/851
CPC分类号： G11B5/66 , G11B5/8416 , G11B5/851 , Y10S428/90 , Y10S428/928 , Y10T428/12493 , Y10T428/12535 , Y10T428/12556 , Y10T428/12569 , Y10T428/12931 , Y10T428/265
摘要： A magnetic recording medium comprising a support, a first layer formed on the support by evaporating cobalt or its alloy by an oblique-incidence vacuum evaporation technique, and a second plated layer made of cobalt or its alloy and formed by a wet plating. The cobalt alloy for the first layer substantially consists of, aside from cobalt, up to 30 wt % of Ni, Fe, Cu, W, Cr, Ru or a mixture thereof. On the other hand, the cobalt alloy for the second layer substantially consists of up to 40 wt % of Ni, up to 8 wt % of P and the balance of Co.
摘要翻译：一种磁记录介质，包括支撑体，通过倾斜入射真空蒸发技术蒸发钴或其合金而形成在支撑体上的第一层，以及由钴或其合金制成并通过湿式电镀形成的第二镀层。用于第一层的钴合金基本上由钴除外，至多30wt％的Ni，Fe，Cu，W，Cr，Ru或其混合物。另一方面，用于第二层的钴合金基本上由至多40重量％的Ni，至多8重量％的P和余量的Co组成。

5. 发明申请

US20070279358A1 SEMICONDUCTOR INTEGRATED CIRCUIT, LIQUID CRYSTAL DRIVE DEVICE, AND LIQUID CRYSTAL DISPLAY SYSTEM 有权
标题翻译：半导体集成电路，液晶驱动器件和液晶显示系统
公开(公告)号：US20070279358A1
公开(公告)日：2007-12-06
申请号：US11833704
申请日：2007-08-03
申请人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
发明人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
IPC分类号： G09G3/36
CPC分类号： G09G3/3688 , G09G3/3611 , G09G3/3696 , G09G2310/027 , G09G2310/0297 , G09G2330/02 , G09G2330/021 , G09G2330/022 , G09G2330/06 , G09G2360/02 , G09G2370/08
摘要： A liquid crystal drive device having a differential-type input circuit including a differential amplification stage for receiving a differential signal and a buffer stage for generating an output signal on the basis of an output of the differential amplification stage, the liquid crystal drive device for receiving a signal of display data via the input circuit and outputting a signal for driving a liquid crystal panel on the basis of the display data, wherein a liquid crystal driving voltage VLCD larger than a power supply voltage VCC for logic to be supplied to the operation voltage buffer stage is supplied to the differential amplification stage of the input circuit. A standby function of interrupting an operation current of the differential amplification stage in a period where no display data is received is provided.
摘要翻译：一种具有差分型输入电路的液晶驱动装置，该差分型输入电路包括用于接收差分信号的差分放大级和用于基于差分放大级的输出产生输出信号的缓冲级，用于接收的液晶驱动装置经由输入电路的显示数据的信号，并且基于显示数据输出用于驱动液晶面板的信号，其中液晶驱动电压VLCD大于用于提供给操作电压的逻辑的电源电压VCC 缓冲级提供给输入电路的差分放大级。提供在不接收显示数据的期间中断差分放大级的工作电流的待机功能。

6. 发明申请

US20050014438A1 Electron emitting device, electron source, image forming apparatus and producing methods of them 审中-公开
标题翻译：电子发射器件，电子源，成像设备及其制造方法
公开(公告)号：US20050014438A1
公开(公告)日：2005-01-20
申请号：US10915489
申请日：2004-08-11
申请人： Hitoshi Oda , Takashi Iwaki
发明人： Hitoshi Oda , Takashi Iwaki
IPC分类号： H01J1/316 , H01J9/00 , H01J9/02 , H01J63/04
CPC分类号： H01J9/027 , H01J1/316 , H01J2201/3165
摘要： In an electron emitting device, an electron source and an image forming apparatus making use of it, and producing methods of them, an organic film is present on a pair of conductive films forming the electron emitting device. This organic film is placed in an area on the conductive films. This prevents occurrence of leak paths between the conductive films, which used to occur because of change of the organic film on the substrate into a conductor where the organic film existed on the substrate outside the area of the conductive films, and prevents decrease in electron emission efficiency.
摘要翻译：在电子发射器件，电子源和使用它的成像设备及其制造方法中，有机膜存在于形成电子发射器件的一对导电膜上。将该有机膜置于导电膜的区域中。这样可以防止导电膜之间的泄漏路径的发生，这是因为由于衬底上的有机膜的变化导致导电膜的区域外的基板上存在有机膜的导体，因此导致电子发射减少效率。

7. 发明授权

US06827619B2 Electron emitting device, electron source, image forming apparatus and producing methods of them 失效
标题翻译：电子发射器件，电子源，成像设备及其制造方法
公开(公告)号：US06827619B2
公开(公告)日：2004-12-07
申请号：US10253638
申请日：2002-09-25
申请人： Hitoshi Oda , Takashi Iwaki
发明人： Hitoshi Oda , Takashi Iwaki
IPC分类号： H01J900
CPC分类号： H01J9/027 , H01J1/316 , H01J2201/3165
摘要： In an electron emitting device, an electron source and an image forming apparatus making use of it, and producing methods of them, an organic film is present on a pair of conductive films forming the electron emitting device. This organic film is placed in an area on the conductive films. This prevents occurrence of leak paths between the conductive films, which used to occur because of change of the organic film on the substrate into a conductor where the organic film existed on the substrate outside the area of the conductive films, and prevents decrease in electron emission efficiency.
摘要翻译：在电子发射器件，电子源和使用它的成像设备及其制造方法中，有机膜存在于形成电子发射器件的一对导电膜上。将该有机膜置于导电膜的区域中。这样可以防止导电膜之间的泄漏路径的发生，这是因为由于衬底上的有机膜的变化导致导电膜的区域外的基板上存在有机膜的导体，因此导致电子发射减少效率。

8. 发明授权

US06492769B1 Electron emitting device, electron source, image forming apparatus and producing methods of them 失效
标题翻译：电子发射器件，电子源，成像设备及其制造方法
公开(公告)号：US06492769B1
公开(公告)日：2002-12-10
申请号：US09471191
申请日：1999-12-23
申请人： Hitoshi Oda , Takashi Iwaki
发明人： Hitoshi Oda , Takashi Iwaki
IPC分类号： H01J130
CPC分类号： H01J9/027 , H01J1/316 , H01J2201/3165
摘要： In an electron emitting device, an electron source and an image forming apparatus making use of it, and producing methods of them, an organic film is present on a pair of conductive films forming the electron emitting device. This organic film is placed in an area on the conductive films. This prevents occurrence of leak paths between the conductive films, which used to occur because of change of the organic film on the substrate into a conductor where the organic film existed on the substrate outside the area of the conductive films, and prevents decrease in electron emission efficiency.
摘要翻译：在电子发射器件，电子源和使用它的成像设备及其制造方法中，有机膜存在于形成电子发射器件的一对导电膜上。将该有机膜置于导电膜的区域中。这样可以防止导电膜之间的泄漏路径的发生，这是因为由于衬底上的有机膜的变化导致导电膜的区域外的基板上存在有机膜的导体，因此导致电子发射减少效率。

9. 发明授权

US5866988A Electron beam apparatus and method of driving the same 失效
标题翻译：电子束装置及其驱动方法
公开(公告)号：US5866988A
公开(公告)日：1999-02-02
申请号：US593426
申请日：1996-01-29
申请人： Hitoshi Oda
发明人： Hitoshi Oda
IPC分类号： G09G3/20 , G09G3/22 , G09G5/393 , H01J1/316 , H01J31/12 , G09G3/10
CPC分类号： H01J1/316 , G09G3/22 , G09G2310/0267 , G09G2310/0275 , G09G2340/125 , G09G3/2011 , G09G3/2014 , G09G5/393 , H01J2329/00
摘要： An electron beam apparatus comprises an electron-emitting device, an anode separated from the electron-emitting device by a distance H (m), means for applying a voltage Vf (V) to the device, and means for applying a voltage Va (V) to the anode. The device has an electron-emitting region arranged between a lower potential side electroconductive thin film which is connected to a lower potential side electrode and a higher potential side electroconductive thin film which is connected to a higher potential side electrode. The device also has a film containing a semiconductor substance with a thickness not greater than 10 nm. The semiconductor-containing film extends on the higher potential side electroconductive thin film from the electron-emitting region toward the higher potential side electrode over a length L (m). The above Vf, Va, H and L satisfy the relationship L.gtoreq.(1/.pi.).multidot.(Vf/Va).multidot.H.
摘要翻译：电子束装置包括电子发射器件，从电子发射器件分离距离H（m）的阳极，用于向器件施加电压Vf（V）的装置，以及用于施加电压Va（V ）到阳极。该器件具有布置在连接到下电位侧电极的下电位侧导电薄膜和连接到较高电位侧电极的较高电位侧导电薄膜之间的电子发射区域。该器件还具有含有厚度不大于10nm的半导体物质的膜。含半导体的膜在高电位侧导电薄膜上从电子发射区延伸到高电位侧电极长度L（m）。上述Vf，Va，H和L满足L> / =（1 / pi）×（Vf / Va）×H的关系。

10. 发明授权

US5179532A Transfering bloch lines using perpendicular and in-plane pulse magnetic fields 失效
标题翻译：使用垂直和平面内的脉冲磁场传输布线
公开(公告)号：US5179532A
公开(公告)日：1993-01-12
申请号：US811912
申请日：1991-12-23
申请人： Takeo Ono , Fumihiko Saito , Hitoshi Oda , Kou Yoneda , Akira Shinmi , Tetsuya Kaneko , Nobuo Watanabe
发明人： Takeo Ono , Fumihiko Saito , Hitoshi Oda , Kou Yoneda , Akira Shinmi , Tetsuya Kaneko , Nobuo Watanabe
IPC分类号： G11C19/08
CPC分类号： G11C19/0816 , G11C19/0825
摘要： A Bloch line transferring method or system comprises a step of transferring only a first Bloch line of the Bloch line pair in the magnetic wall in a predetermined direction, and a step of transferring a second Bloch line of the Bloch line pair in the predetermined direction to form the Bloch line pair. It typically comprises applying a magnetic field perpendicular to a film plane of a magnetic thin film having the magnetic wall, to the magnetic thin film, and applying a magnetic field parallel to the film plane of the magnetic film, to the magnetic thin film along the magnetic wall.
摘要翻译：布洛赫线转移方法或系统包括在预定方向上仅将Bloch线对的第一布洛赫线传输到磁壁中的步骤，以及将布洛赫线对的第二布洛赫线沿预定方向转移到形成布洛赫线对。其通常包括将垂直于具有磁性壁的磁性薄膜的膜平面的磁场施加到磁性薄膜，并且将平行于磁性膜的膜平面的磁场施加到沿着磁性膜的磁性薄膜的磁性薄膜磁墙。

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