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1. 发明申请

US20070107655A1 Sub-resolutional laser annealing mask 有权
标题翻译：子解决激光退火掩模
公开(公告)号：US20070107655A1
公开(公告)日：2007-05-17
申请号：US11653057
申请日：2007-01-13
申请人： Yasuhiro Mitani , Apostolos Voutsas , Mark Crowder
发明人： Yasuhiro Mitani , Apostolos Voutsas , Mark Crowder
IPC分类号： C30B23/00 , H01L21/76 , C30B28/14
CPC分类号： C30B29/06 , C30B13/00
摘要： A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension; applying a laser beam having a first energy density to a substrate region; melting a substrate region in response to the first energy density; crystallizing the substrate region; applying a diffracted laser beam to the substrate region; and, in response to the diffracted laser beam, smoothing the substrate region surface. In some aspects of the method, applying a diffracted laser beam to the substrate area includes applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region. The second energy density is in the range of 40% to 70% of the first energy density, and preferably in the range of 50% to 60% of the first energy density.
摘要翻译：提供了具有子分辨率孔径特征的掩模和使用子分辨率掩模图案来平滑退火表面的方法。该方法包括：提供具有第一波长的激光束; 向具有具有第一尺寸的孔的第一掩模部分和具有小于所述第一尺寸的具有第二尺寸的孔的第二掩模部分提供掩模; 将具有第一能量密度的激光束施加到衬底区域; 响应于第一能量密度熔化基底区域; 使衬底区域结晶; 将衍射激光束施加到所述衬底区域; 并且响应于衍射激光束，平滑基板区域表面。在该方法的一些方面中，将衍射激光束施加到衬底区域包括将具有小于第一能量密度的第二能量密度的衍射激光束施加到衬底区域。第二能量密度在第一能量密度的40％至70％的范围内，优选在第一能量密度的50％至60％的范围内。

2. 发明申请

US20050009352A1 Method for optimized laser annealing smoothing 失效
标题翻译：优化激光退火平滑的方法
公开(公告)号：US20050009352A1
公开(公告)日：2005-01-13
申请号：US10913678
申请日：2004-08-05
申请人： Mark Crowder , Yasuhiro Mitani , Apostolos Voutsas
发明人： Mark Crowder , Yasuhiro Mitani , Apostolos Voutsas
IPC分类号： B23K26/06 , H01L21/00 , H01L21/20 , H01L21/302 , H01L21/44 , H01L21/461 , H01L21/84
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026
摘要： A laser annealing mask is provided with cross-hatched sub-resolution aperture patterns. The mask comprises a first section with aperture patterns for transmitting approximately 100% of incident light, and at least one section with cross-hatched sub-resolution aperture patterns for diffracting incident light. In one aspect, a second mask section with cross-hatched sub-resolution aperture patterns has an area adjacent a vertical edge and a third mask section with cross-hatched sub-resolution aperture patterns adjacent the opposite vertical edge, with the first mask section being located between the second and third mask sections. The section with cross-hatched sub-resolution aperture patterns transmits approximately 40% to 70%, and preferably 50% to 60% of incident light energy density. In some aspects, the section with cross-hatched sub-resolution aperture patterns includes a plurality of different cross-hatched aperture patterns. The cross-hatched sub-resolution aperture patterns can be defined by horizontal gap and slits, as well as vertical gap and slits.
摘要翻译：激光退火掩模具有交叉阴影的子分辨率孔径图案。掩模包括具有用于传输大约100％的入射光的孔径图案的第一部分和具有用于衍射入射光的交叉阴影的子分辨率孔径图案的至少一个部分。在一个方面，具有交叉阴影线的子分辨率孔径图案的第二掩模部分具有与垂直边缘相邻的区域和具有与相对的垂直边缘相邻的交叉阴影的子分辨率孔径图案的第三掩模部分，第一掩模部分是位于第二和第三掩模部分之间。具有交叉阴影的子分辨率孔径图案的部分透射入射光能密度的大约40％至70％，优选地为50％至60％。在一些方面，具有交叉阴影的子分辨率孔径图案的部分包括多个不同的交叉阴影孔径图案。交叉阴影的子分辨率孔径图案可以由水平间隙和狭缝以及垂直间隙和狭缝限定。

3. 发明申请

US20060054077A1 Pulse sequencing lateral growth method 有权
标题翻译：脉冲序列横向生长法
公开(公告)号：US20060054077A1
公开(公告)日：2006-03-16
申请号：US11263604
申请日：2005-10-31
申请人： Apostolos Voutsas , Robert Sposili , Mark Crowder
发明人： Apostolos Voutsas , Robert Sposili , Mark Crowder
IPC分类号： C30B15/14
CPC分类号： H01L21/02686 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/1285
摘要： A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
摘要翻译：提供横向结晶的方法用于增加横向生长长度（LGL）。将衬底的局部区域加热一段短时间。当衬底的局部区域仍被加热时，照射覆盖在衬底上的硅膜来退火硅膜，以使与加热的衬底区域热接触的一部分硅膜结晶。可以使用CO 2激光器作为加热衬底的热源，而使用UV激光或可见光谱激光来照射和结晶膜。

4. 发明申请

US20050103255A1 Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing 有权
标题翻译：通过UV和IR脉冲测序在硅膜中长晶体横向生长的工艺
公开(公告)号：US20050103255A1
公开(公告)日：2005-05-19
申请号：US10713383
申请日：2003-11-13
申请人： Apostolos Voutsas , Robert Sposili , Mark Crowder
发明人： Apostolos Voutsas , Robert Sposili , Mark Crowder
IPC分类号： C30B1/00 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/20 , H01L21/77 , H01L21/84
CPC分类号： H01L21/02686 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/1285
摘要： A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
摘要翻译：提供横向结晶的方法用于增加横向生长长度（LGL）。将衬底的局部区域加热一段短时间。当衬底的局部区域仍被加热时，照射覆盖在衬底上的硅膜来退火硅膜，以使与加热的衬底区域热接触的一部分硅膜结晶。可以使用CO 2激光器作为加热衬底的热源，而使用UV激光或可见光谱激光来照射和结晶膜。

5. 发明申请

US20050170568A1 Isotropic polycrystalline silicon 有权
标题翻译：各向同性多晶硅
公开(公告)号：US20050170568A1
公开(公告)日：2005-08-04
申请号：US11099198
申请日：2005-04-04
申请人： Masao Moriguchi , Apostolos Voutsas , Mark Crowder
发明人： Masao Moriguchi , Apostolos Voutsas , Mark Crowder
IPC分类号： H01L21/20 , H01L21/336 , H01L29/16 , H01L29/786 , H01L21/00
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2022 , H01L21/2026 , H01L29/16 , H01L29/66757 , H01L29/78675
摘要： A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.
摘要翻译：提供了高质量各向同性多晶硅（poly-Si）和制造高质量各向同性多晶硅膜的方法。该方法包括在a-Si膜的第一区域中形成非晶硅膜（a-Si）并使用MISPC工艺形成多晶硅膜。然后，该方法使用激光诱导横向生长（LILaC）过程退火包括在第一区域中的第二区域。在一些方面，使用2N射击激光照射工艺作为LILaC工艺。在一些方面，使用定向凝固方法作为LILaC方法。响应于使用MISPC膜作为前体膜，该方法在第二区域中在多晶硅中形成低角度晶界。

6. 发明申请

US20050037551A1 Isotropic polycrystalline silicon and method for producing same 有权
公开(公告)号：US20050037551A1
公开(公告)日：2005-02-17
申请号：US10640771
申请日：2003-08-13
申请人： Masao Moriguchi , Apostolos Voutsas , Mark Crowder
发明人： Masao Moriguchi , Apostolos Voutsas , Mark Crowder
IPC分类号： H01L21/20 , H01L21/336 , H01L29/16 , H01L29/786 , H01L29/04 , H01L21/00 , H01L21/84
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2022 , H01L21/2026 , H01L29/16 , H01L29/66757 , H01L29/78675
摘要： A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.

7. 发明申请

US20050255640A1 Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification 有权
标题翻译：使用顺序侧向凝固生产均匀的大粒度和晶界位置操纵多晶薄膜半导体的方法
公开(公告)号：US20050255640A1
公开(公告)日：2005-11-17
申请号：US11141815
申请日：2005-06-01
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： G03F7/20 , H01L21/20 , H01L21/77 , H01L21/84 , H01L29/04
CPC分类号： B23K26/0622 , B23K26/0626 , B23K26/066 , G03F7/70041 , G03F7/70725 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
摘要翻译：公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化，均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化，并可控地顺序地翻译一个关系相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

8. 发明申请

US20070145017A1 SURFACE PLANARIZATION OF THIN SILICON FILMS DURING AND AFTER PROCESSING BY THE SEQUENTIAL LATERAL SOLIDIFICATION METHOD 失效
标题翻译：通过顺序方向固化方法加工后的薄硅膜的表面平面化
公开(公告)号：US20070145017A1
公开(公告)日：2007-06-28
申请号：US11671917
申请日：2007-02-06
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： B23K26/00 , B23K26/02 , G02B26/08
CPC分类号： H01L21/02686 , B23K26/06 , B23K26/0622 , B23K26/066 , B23K26/0853 , B23K26/3576 , B23K2101/40 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/302 , H01L21/32115 , H01L21/67253 , Y10S438/942
摘要： Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser for generating a plurality of xcimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a sample stage for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage with respect to the laser pulses, and a computer for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage relative to the laser pulses.
摘要翻译：公开了用于降低由顺序侧向凝固过程产生的多晶或单晶薄膜的表面粗糙度的系统和方法。在一种布置中，该系统包括用于产生预定注量的多个xCimer激光脉冲的准分子激光器，用于可控制地调制准分子激光脉冲的能量密度的能量密度调制器，使得注量低于完全熔化所需的能量密度薄膜，用于在预定平面中均匀化调制的激光脉冲的光束均质化器，用于接收均质激光脉冲以实现对应于激光脉冲的多晶或单晶薄膜的部分熔化的样品台，用于可控地平移样品台相对于激光脉冲的相对位置，以及用于将准分子脉冲产生和能量密度调制与样品台的相对位置协调的计算机，从而通过样品台的顺序转换来处理多晶或单晶薄膜相对于激光脉冲。

9. 发明申请

US20080160215A1 Contamination Resistant Surfaces 审中-公开
标题翻译：耐污染表面
公开(公告)号：US20080160215A1
公开(公告)日：2008-07-03
申请号：US11617662
申请日：2006-12-28
申请人： Mark Crowder , Christina Haley
发明人： Mark Crowder , Christina Haley
IPC分类号： C23C16/50 , B05D5/06
CPC分类号： C23C16/26 , B05D1/62 , B05D5/083 , C23C16/505
摘要： The invention provides a fluorocarbon coating having a reduced surface energy that has low susceptibility to molecular and particulate contamination. The fluorocarbon coating is stable and functional in vacuum. The fluorocarbon coating is stable to chemical solvents, cryogenic temperatures, and temperatures as high as 400° C. The fluorocarbon coating may be deposited as a thin film or produced as a modification to a surface of optical instruments without significant alteration of the optical characteristics. The fluorocarbon coating may reside on a textured substrate or include texturing within the process to further enhance the contamination resistant qualities of the treated surface. The fluorocarbon coating may be graded in composition throughout the coating layer. The invention can be used on surfaces that operate in aerospace environments and in dusty environments where contamination is an important consideration.
摘要翻译：本发明提供了具有降低的表面能的氟碳涂层，其对分子和颗粒污染的敏感性低。氟碳涂层在真空中稳定和功能。氟碳涂层对于化学溶剂，低温温度和高达400℃的温度是稳定的。氟碳涂层可以作为薄膜沉积或者作为光学仪器表面的修饰产生，而不会显着改变光学特性。氟碳涂层可以驻留在织构化的基底上，或者包括在该方法内的纹理以进一步增强被处理表面的抗污染性质。氟碳涂层可以在整个涂层中以组成分级分。本发明可用于在航空航天环境中和在污染是重要考虑因素的多尘环境中工作的表面。

10. 发明申请

US20050032249A1 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method 有权
标题翻译：通过顺序侧向固化方法在处理期间和之后的薄硅膜的表面平坦化
公开(公告)号：US20050032249A1
公开(公告)日：2005-02-10
申请号：US10939271
申请日：2004-09-13
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： B23K26/00 , B23K26/06 , H01L21/00 , H01L21/20 , H01L21/302 , H01L21/321 , H01L21/84
CPC分类号： H01L21/02686 , B23K26/06 , B23K26/0622 , B23K26/066 , B23K26/0853 , B23K26/3576 , B23K2101/40 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/302 , H01L21/32115 , H01L21/67253 , Y10S438/942
摘要： Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator (120) for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer (144) for homoginizing modulated laser pulses in a predetermined plane, a sample stage (170) for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage (170) with respect to the laser pulses, and a computer (110) for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage (170) to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage (170) relative to the laser pulses.
摘要翻译：公开了用于降低由顺序侧向凝固过程产生的多晶或单晶薄膜的表面粗糙度的系统和方法。在一种布置中，该系统包括用于产生预定注量的多个准分子激光脉冲的准分子激光器（110），用于可控制地调节准分子激光脉冲的能量密度的能量密度调制器（120）需要使薄膜完全熔化的光束均质化器（144），用于使预定平面中的调制激光脉冲同调化，用于接收均质化的激光脉冲以实现多晶或单晶薄膜的部分熔化的样品台（170）对应于激光脉冲，用于可控地平移样品台（170）相对于激光脉冲的相对位置的平移装置，以及用于将准分子脉冲产生和能量密度调制与样品的相对位置协调的计算机（110）（170），从而通过样品台（170）相对于其的顺序平移来处理多晶或单晶薄膜激光脉冲。

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