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1. 发明申请

US20070145017A1 SURFACE PLANARIZATION OF THIN SILICON FILMS DURING AND AFTER PROCESSING BY THE SEQUENTIAL LATERAL SOLIDIFICATION METHOD 失效
标题翻译：通过顺序方向固化方法加工后的薄硅膜的表面平面化
公开(公告)号：US20070145017A1
公开(公告)日：2007-06-28
申请号：US11671917
申请日：2007-02-06
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： B23K26/00 , B23K26/02 , G02B26/08
CPC分类号： H01L21/02686 , B23K26/06 , B23K26/0622 , B23K26/066 , B23K26/0853 , B23K26/3576 , B23K2101/40 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/302 , H01L21/32115 , H01L21/67253 , Y10S438/942
摘要： Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser for generating a plurality of xcimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a sample stage for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage with respect to the laser pulses, and a computer for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage relative to the laser pulses.
摘要翻译：公开了用于降低由顺序侧向凝固过程产生的多晶或单晶薄膜的表面粗糙度的系统和方法。在一种布置中，该系统包括用于产生预定注量的多个xCimer激光脉冲的准分子激光器，用于可控制地调制准分子激光脉冲的能量密度的能量密度调制器，使得注量低于完全熔化所需的能量密度薄膜，用于在预定平面中均匀化调制的激光脉冲的光束均质化器，用于接收均质激光脉冲以实现对应于激光脉冲的多晶或单晶薄膜的部分熔化的样品台，用于可控地平移样品台相对于激光脉冲的相对位置，以及用于将准分子脉冲产生和能量密度调制与样品台的相对位置协调的计算机，从而通过样品台的顺序转换来处理多晶或单晶薄膜相对于激光脉冲。

2. 发明申请

US20050255640A1 Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification 有权
标题翻译：使用顺序侧向凝固生产均匀的大粒度和晶界位置操纵多晶薄膜半导体的方法
公开(公告)号：US20050255640A1
公开(公告)日：2005-11-17
申请号：US11141815
申请日：2005-06-01
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： G03F7/20 , H01L21/20 , H01L21/77 , H01L21/84 , H01L29/04
CPC分类号： B23K26/0622 , B23K26/0626 , B23K26/066 , G03F7/70041 , G03F7/70725 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
摘要翻译：公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化，均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化，并可控地顺序地翻译一个关系相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

3. 发明申请

US20070202668A1 METHODS FOR PRODUCING UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS USING SEQUENTIAL LATERIAL SOLIDIFICATION 失效
标题翻译：用于生产均匀的大颗粒和颗粒边界位置的方法操作的多晶薄膜半导体使用顺序方向固化
公开(公告)号：US20070202668A1
公开(公告)日：2007-08-30
申请号：US11744493
申请日：2007-05-04
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： H01L21/20
CPC分类号： B23K26/0622 , B23K26/0626 , B23K26/066 , G03F7/70041 , G03F7/70725 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
摘要翻译：公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化，均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化，并可控地顺序地翻译一个关系相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

4. 发明申请

US20050032249A1 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method 有权
标题翻译：通过顺序侧向固化方法在处理期间和之后的薄硅膜的表面平坦化
公开(公告)号：US20050032249A1
公开(公告)日：2005-02-10
申请号：US10939271
申请日：2004-09-13
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： B23K26/00 , B23K26/06 , H01L21/00 , H01L21/20 , H01L21/302 , H01L21/321 , H01L21/84
CPC分类号： H01L21/02686 , B23K26/06 , B23K26/0622 , B23K26/066 , B23K26/0853 , B23K26/3576 , B23K2101/40 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/302 , H01L21/32115 , H01L21/67253 , Y10S438/942
摘要： Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator (120) for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer (144) for homoginizing modulated laser pulses in a predetermined plane, a sample stage (170) for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage (170) with respect to the laser pulses, and a computer (110) for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage (170) to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage (170) relative to the laser pulses.
摘要翻译：公开了用于降低由顺序侧向凝固过程产生的多晶或单晶薄膜的表面粗糙度的系统和方法。在一种布置中，该系统包括用于产生预定注量的多个准分子激光脉冲的准分子激光器（110），用于可控制地调节准分子激光脉冲的能量密度的能量密度调制器（120）需要使薄膜完全熔化的光束均质化器（144），用于使预定平面中的调制激光脉冲同调化，用于接收均质化的激光脉冲以实现多晶或单晶薄膜的部分熔化的样品台（170）对应于激光脉冲，用于可控地平移样品台（170）相对于激光脉冲的相对位置的平移装置，以及用于将准分子脉冲产生和能量密度调制与样品的相对位置协调的计算机（110）（170），从而通过样品台（170）相对于其的顺序平移来处理多晶或单晶薄膜激光脉冲。

5. 发明申请

US20070010104A1 Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions 有权
标题翻译：使用线型光束的衬底上的膜区域的激光结晶处理的工艺和系统，以及这些膜区域的结构
公开(公告)号：US20070010104A1
公开(公告)日：2007-01-11
申请号：US11373772
申请日：2006-03-09
申请人： James Im , Paul van der Wilt
发明人： James Im , Paul van der Wilt
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C30B13/24 , C30B35/00 , G21K5/02 , G21K5/10 , H01L21/02678 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： Process and system for processing a thin film sample, as well as at least one portion of the thin film structure are provided. Irradiation beam pulses can be shaped to define at least one line-type beam pulse, which includes a leading portion, a top portion and a trailing portion, in which at least one part has an intensity sufficient to at least partially melt a film sample. Irradiating a first portion of the film sample to at least partially melt the first portion, and allowing the first portion to resolidify and crystallize to form an approximately uniform area therein. After the irradiation of the first portion of the film sample, irradiating a second portion using a second one of the line-type beam pulses to at least partially melt the second portion, and allowing the second portion to resolidify and crystallize to form an approximately uniform area therein. A section of the first portion impacted by the top portion of the first one of the line-type beam pulses is prevented from being irradiated by trailing portion of the second one of the line-type beam pulses.
摘要翻译：提供了用于处理薄膜样品的方法和系统，以及薄膜结构的至少一部分。辐射束脉冲可以被成形为限定至少一个线型束脉冲，其包括前导部分，顶部部分和尾部部分，其中至少一个部分具有足以至少部分地熔化膜样品的强度。辐射薄膜样品的第一部分以至少部分地熔化第一部分，并允许第一部分重新凝固并结晶以在其中形成大致均匀的区域。在照射第一部分薄膜样品之后，使用第二种线型束脉冲照射第二部分以至少部分地熔化第二部分，并允许第二部分重新凝固并结晶以形成近似均匀的区域。由第一线路型光束脉冲的顶部部分影响的第一部分的一部分被第二线路型光束脉冲的后部部分照射。

6. 发明申请

US20070010074A1 Method and system for facilitating bi-directional growth 失效
标题翻译：促进双向增长的方法和系统
公开(公告)号：US20070010074A1
公开(公告)日：2007-01-11
申请号：US11372161
申请日：2006-03-09
申请人： James Im
发明人： James Im
IPC分类号： H01L21/36 , B23K26/08
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/0268 , H01L21/02691 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： A method and system for processing at least one portion of a thin film sample on a substrate, with such portion of the film sample having a first boundary and a second boundary. One or more first areas of the film sample are successively irradiated by first beamlets of an irradiation beam pulse so that the first areas are melted throughout their thickness and allowed to re-solidify and crystallize thereby having grains grown therein. Thereafter, one or more second areas of the film sample are irradiated by second beamlets so that the second areas are melted throughout their thickness. At least two of the second areas partially overlap a particular area of the re-solidified and crystallized first areas such that the grains provided in the particular area grow into each of the at least two second areas upon re-solidification thereof.
摘要翻译：一种用于在衬底上处理薄膜样品的至少一部分的方法和系统，其中膜样品的这些部分具有第一边界和第二边界。膜样品的一个或多个第一区域被照射束脉冲的第一子束连续地照射，使得第一区域在其整个厚度上熔化并使其再固化和结晶，从而使晶粒生长在其中。此后，膜样品的一个或多个第二区域被第二子束照射，使得第二区域在其厚度上熔化。第二区域中的至少两个部分地与再固化和结晶的第一区域的特定区域重叠，使得在特定区域中提供的颗粒在其再固化时生长到至少两个第二区域中的每一个中。

7. 发明申请

US20060060130A1 Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within arears in such regions and edge areas thereof, and a structure of film regions 有权
标题翻译：用于基板上的膜区域的激光结晶处理的工艺和系统，以在这些区域和边缘区域内的区域内提供基本的均匀性，以及膜区域的结构
公开(公告)号：US20060060130A1
公开(公告)日：2006-03-23
申请号：US10525283
申请日：2003-08-19
申请人： James Im
发明人： James Im
IPC分类号： C03B13/06 , H01L21/324
CPC分类号： H01L21/02686 , B23K26/066 , B23K26/067 , G03F7/70041 , G03F7/70725 , H01L21/02678 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/78675
摘要： A process and system for processing a thin film sample, as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each irradiation beam pulse may be masked to define a first plurality of beamlets and a second plurality of beamlets. The first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to at least partially melt irradiated portions of the section of the film sample. A particular portion of the section of the film sample is irradiated with the first beamlets of a first pulse of the irradiated beam pulses to melt first areas of the particular portion, the first areas being at least partially melted, leaving first unirradiated regions between respective adjacent ones of the first areas, and being allowed to resolidify and crystallize. After the irradiation of the particular portion with the first beamlets, the particular portion is again irradiated with the second beamlets of a second pulse of the irradiated beam pulses to melt second areas of the particular portion, the second areas being at least partially melted, leaving second unirradiated regions between respective adjacent ones of the second areas, and being allowed to resolidify and crystallize. The first irradiated and re-solidified areas and the second irradiated and re-solidified areas are intermingled with one another within the section of the film sample. In addition, the first areas correspond to first pixels, and the second areas correspond to second pixels.
摘要翻译：提供了一种用于处理薄膜样品的方法和系统，以及薄膜结构。特别地，可以控制光束发生器以预定的重复率发射连续的照射光束脉冲。每个照射束脉冲可以被掩蔽以限定第一多个子束和第二多个子束。每个照射脉冲的第一和第二多个子束被提供用于冲击薄膜样品并且具有足以至少部分地熔化薄膜样品部分的照射部分的强度。用所述照射束脉冲的第一脉冲的第一子束照射所述膜样品的所述部分的特定部分，以熔化所述特定部分的第一区域，所述第一区域至少部分地熔化，从而在相邻的相邻区域之间留下第一未照射区域第一个地区，被允许重新确定和结晶。在用第一子束照射特定部分之后，特定部分再次用照射束脉冲的第二脉冲的第二子束照射以熔化特定部分的第二区域，第二区域至少部分地熔化，留下在相邻的相邻的第二区域之间的第二未照射区域，并被允许再凝固和结晶。第一次照射和再固化的区域以及第二次照射和再固化的区域在膜样品的部分内彼此混合。此外，第一区域对应于第一像素，第二区域对应于第二像素。

8. 发明申请

US20050235903A1 Single scan irradiation for crystallization of thin films 失效
标题翻译：单扫描辐射用于薄膜结晶
公开(公告)号：US20050235903A1
公开(公告)日：2005-10-27
申请号：US10944350
申请日：2004-09-17
申请人： James Im , Paul van der Wilt
发明人： James Im , Paul van der Wilt
IPC分类号： C30B1/00 , C30B3/00 , C30B5/00 , C30B13/24 , G03F7/20 , H01L20060101
CPC分类号： C30B35/00 , B23K26/066 , C30B13/24 , C30B28/08 , G03F7/70041 , G03F7/70725 , Y10S117/90 , Y10T117/10 , Y10T117/1008
摘要： A method of processing a polycrystalline film on a substrate includes generating a plurality of laser beam pulses, positioning the film on a support capable of movement in at least one direction, directing the plurality of laser beam pulses through a mask to generate patterned laser beams; each of said beams having a length l′, a width w′ and a spacing between adjacent beams d′, irradiating a region of the film with the patterned beams, said beams having an intensity that is sufficient to melt an irradiated portion of the film to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating either the film or the mask, or both, a distance in the x- and y-directions, where the distance of translation in the y-direction is in the range of about 1′/n-δ, where δ is a value selected to form overlapping the beamlets from the one irradiation step to the next, and where the distance of translation in the x-direction is selected such that the film is moved a distance of about λ′ after n irradiations, where λ′=w′+d′.
摘要翻译：在衬底上处理多晶膜的方法包括产生多个激光束脉冲，将膜定位在能够在至少一个方向上移动的支撑件上，将多个激光束脉冲引导通过掩模以产生图案化的激光束; 每个所述光束具有长度l'，宽度w'和相邻光束d'之间的间隔，用图案化光束照射膜的区域，所述光束具有足以熔化膜的照射部分的强度以引起膜的照射部分的结晶，其中膜区域被照射n次; 并且在每个胶片部分照射之后，将胶片或掩模或两者都平移在x方向和y方向上的距离，其中在y方向上的平移距离在约1'/ n -delta，其中delta是选择以形成从一个照射步骤到下一个照射步骤的子束重叠的值，并且其中选择x方向上的平移距离使得膜在n之后移动约λ'的距离辐射，其中λ'= w'+ d'。

9. 发明授权

US07164152B2 Laser-irradiated thin films having variable thickness 有权
标题翻译：具有可变厚度的激光照射薄膜
公开(公告)号：US07164152B2
公开(公告)日：2007-01-16
申请号：US10754157
申请日：2004-01-09
申请人： James Im
发明人： James Im
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L21/02686 , C30B1/00 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/2026 , H01L21/268 , H01L21/84 , H01L29/04
摘要： A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.
摘要翻译：结晶膜包括具有第一膜厚度和第一晶粒结构的第一晶体区域; 以及具有第二膜厚度和第二晶粒结构的第二晶体区域。第一膜厚度大于第二膜厚度，并且选择第一和第二膜厚度以提供具有装置部件所需的结晶度和取向的结晶区域。

10. 发明授权

US07160763B2 Polycrystalline TFT uniformity through microstructure mis-alignment 有权
标题翻译：多晶TFT通过微结构不对齐均匀
公开(公告)号：US07160763B2
公开(公告)日：2007-01-09
申请号：US10487170
申请日：2002-08-27
申请人： James Im , Paul Christiaan Van Der Wilt
发明人： James Im , Paul Christiaan Van Der Wilt
IPC分类号： H01L21/00
CPC分类号： C30B29/06 , C30B13/24
摘要： Methods of making a polycrystalline silicon thin-film transistor having a uniform microstructure. One exemplary method requires receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction, and placing at least portions (410, 420) of one or more thin-film transistors on the received film such that they are tilted relative to the periodic structure of the thin film.
摘要翻译：制造具有均匀微观结构的多晶硅薄膜晶体管的方法。一种示例性方法需要接收具有在至少第一方向上周期性的晶粒结构的多晶硅薄膜，并且在接收的薄膜上放置一个或多个薄膜晶体管的至少一部分（410,420），使得它们是相对于薄膜的周期性结构倾斜。

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