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    • 2. 发明申请
    • Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
    • 使用顺序侧向凝固生产均匀的大粒度和晶界位置操纵多晶薄膜半导体的方法
    • US20050255640A1
    • 2005-11-17
    • US11141815
    • 2005-06-01
    • James ImRobert SposiliMark Crowder
    • James ImRobert SposiliMark Crowder
    • G03F7/20H01L21/20H01L21/77H01L21/84H01L29/04
    • B23K26/0622B23K26/0626B23K26/066G03F7/70041G03F7/70725H01L21/02532H01L21/0268H01L21/02686H01L21/02691H01L27/1285H01L27/1296H01L29/04
    • Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
    • 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中,一种方法包括以下步骤:产生准分子激光脉冲序列,可控制地将序列中的每个准分子激光脉冲调制成预定的注量,在预定的平面中使序列中的每个调制的激光脉冲均匀化, 均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列,以产生线图案化子束的注量控制脉冲序列,狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核 通过对应于狭缝的子束照射的薄膜样品,以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品,以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化, 并可控地顺序地翻译一个关系 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置,从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。
    • 4. 发明申请
    • METHODS FOR PRODUCING UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS USING SEQUENTIAL LATERIAL SOLIDIFICATION
    • 用于生产均匀的大颗粒和颗粒边界位置的方法操作的多晶薄膜半导体使用顺序方向固化
    • US20070202668A1
    • 2007-08-30
    • US11744493
    • 2007-05-04
    • James ImRobert SposiliMark Crowder
    • James ImRobert SposiliMark Crowder
    • H01L21/20
    • B23K26/0622B23K26/0626B23K26/066G03F7/70041G03F7/70725H01L21/02532H01L21/0268H01L21/02686H01L21/02691H01L27/1285H01L27/1296H01L29/04
    • Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
    • 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中,一种方法包括以下步骤:产生准分子激光脉冲序列,可控制地将序列中的每个准分子激光脉冲调制成预定的注量,在预定的平面中使序列中的每个调制的激光脉冲均匀化, 均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列,以产生线图案化子束的注量控制脉冲序列,狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核 通过对应于狭缝的子束照射的薄膜样品,以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品,以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化, 并可控地顺序地翻译一个关系 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置,从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。
    • 8. 发明申请
    • Sub-resolutional laser annealing mask
    • 子解决激光退火掩模
    • US20070107655A1
    • 2007-05-17
    • US11653057
    • 2007-01-13
    • Yasuhiro MitaniApostolos VoutsasMark Crowder
    • Yasuhiro MitaniApostolos VoutsasMark Crowder
    • C30B23/00H01L21/76C30B28/14
    • C30B29/06C30B13/00
    • A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension; applying a laser beam having a first energy density to a substrate region; melting a substrate region in response to the first energy density; crystallizing the substrate region; applying a diffracted laser beam to the substrate region; and, in response to the diffracted laser beam, smoothing the substrate region surface. In some aspects of the method, applying a diffracted laser beam to the substrate area includes applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region. The second energy density is in the range of 40% to 70% of the first energy density, and preferably in the range of 50% to 60% of the first energy density.
    • 提供了具有子分辨率孔径特征的掩模和使用子分辨率掩模图案来平滑退火表面的方法。 该方法包括:提供具有第一波长的激光束; 向具有具有第一尺寸的孔的第一掩模部分和具有小于所述第一尺寸的具有第二尺寸的孔的第二掩模部分提供掩模; 将具有第一能量密度的激光束施加到衬底区域; 响应于第一能量密度熔化基底区域; 使衬底区域结晶; 将衍射激光束施加到所述衬底区域; 并且响应于衍射激光束,平滑基板区域表面。 在该方法的一些方面中,将衍射激光束施加到衬底区域包括将具有小于第一能量密度的第二能量密度的衍射激光束施加到衬底区域。 第二能量密度在第一能量密度的40%至70%的范围内,优选在第一能量密度的50%至60%的范围内。
    • 9. 发明申请
    • Contamination Resistant Surfaces
    • 耐污染表面
    • US20080160215A1
    • 2008-07-03
    • US11617662
    • 2006-12-28
    • Mark CrowderChristina Haley
    • Mark CrowderChristina Haley
    • C23C16/50B05D5/06
    • C23C16/26B05D1/62B05D5/083C23C16/505
    • The invention provides a fluorocarbon coating having a reduced surface energy that has low susceptibility to molecular and particulate contamination. The fluorocarbon coating is stable and functional in vacuum. The fluorocarbon coating is stable to chemical solvents, cryogenic temperatures, and temperatures as high as 400° C. The fluorocarbon coating may be deposited as a thin film or produced as a modification to a surface of optical instruments without significant alteration of the optical characteristics. The fluorocarbon coating may reside on a textured substrate or include texturing within the process to further enhance the contamination resistant qualities of the treated surface. The fluorocarbon coating may be graded in composition throughout the coating layer. The invention can be used on surfaces that operate in aerospace environments and in dusty environments where contamination is an important consideration.
    • 本发明提供了具有降低的表面能的氟碳涂层,其对分子和颗粒污染的敏感性低。 氟碳涂层在真空中稳定和功能。 氟碳涂层对于化学溶剂,低温温度和高达400℃的温度是稳定的。氟碳涂层可以作为薄膜沉积或者作为光学仪器表面的修饰产生,而不会显着改变光学特性。 氟碳涂层可以驻留在织构化的基底上,或者包括在该方法内的纹理以进一步增强被处理表面的抗污染性质。 氟碳涂层可以在整个涂层中以组成分级分。 本发明可用于在航空航天环境中和在污染是重要考虑因素的多尘环境中工作的表面。