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1. 发明申请

US20060054077A1 Pulse sequencing lateral growth method 有权
标题翻译：脉冲序列横向生长法
公开(公告)号：US20060054077A1
公开(公告)日：2006-03-16
申请号：US11263604
申请日：2005-10-31
申请人： Apostolos Voutsas , Robert Sposili , Mark Crowder
发明人： Apostolos Voutsas , Robert Sposili , Mark Crowder
IPC分类号： C30B15/14
CPC分类号： H01L21/02686 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/1285
摘要： A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
摘要翻译：提供横向结晶的方法用于增加横向生长长度（LGL）。将衬底的局部区域加热一段短时间。当衬底的局部区域仍被加热时，照射覆盖在衬底上的硅膜来退火硅膜，以使与加热的衬底区域热接触的一部分硅膜结晶。可以使用CO 2激光器作为加热衬底的热源，而使用UV激光或可见光谱激光来照射和结晶膜。

2. 发明申请

US20050103255A1 Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing 有权
标题翻译：通过UV和IR脉冲测序在硅膜中长晶体横向生长的工艺
公开(公告)号：US20050103255A1
公开(公告)日：2005-05-19
申请号：US10713383
申请日：2003-11-13
申请人： Apostolos Voutsas , Robert Sposili , Mark Crowder
发明人： Apostolos Voutsas , Robert Sposili , Mark Crowder
IPC分类号： C30B1/00 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/20 , H01L21/77 , H01L21/84
CPC分类号： H01L21/02686 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/1285
摘要： A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
摘要翻译：提供横向结晶的方法用于增加横向生长长度（LGL）。将衬底的局部区域加热一段短时间。当衬底的局部区域仍被加热时，照射覆盖在衬底上的硅膜来退火硅膜，以使与加热的衬底区域热接触的一部分硅膜结晶。可以使用CO 2激光器作为加热衬底的热源，而使用UV激光或可见光谱激光来照射和结晶膜。

3. 发明申请

US20050255640A1 Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification 有权
标题翻译：使用顺序侧向凝固生产均匀的大粒度和晶界位置操纵多晶薄膜半导体的方法
公开(公告)号：US20050255640A1
公开(公告)日：2005-11-17
申请号：US11141815
申请日：2005-06-01
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： G03F7/20 , H01L21/20 , H01L21/77 , H01L21/84 , H01L29/04
CPC分类号： B23K26/0622 , B23K26/0626 , B23K26/066 , G03F7/70041 , G03F7/70725 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
摘要翻译：公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化，均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化，并可控地顺序地翻译一个关系相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

4. 发明申请

US20070145017A1 SURFACE PLANARIZATION OF THIN SILICON FILMS DURING AND AFTER PROCESSING BY THE SEQUENTIAL LATERAL SOLIDIFICATION METHOD 失效
标题翻译：通过顺序方向固化方法加工后的薄硅膜的表面平面化
公开(公告)号：US20070145017A1
公开(公告)日：2007-06-28
申请号：US11671917
申请日：2007-02-06
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： B23K26/00 , B23K26/02 , G02B26/08
CPC分类号： H01L21/02686 , B23K26/06 , B23K26/0622 , B23K26/066 , B23K26/0853 , B23K26/3576 , B23K2101/40 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/302 , H01L21/32115 , H01L21/67253 , Y10S438/942
摘要： Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser for generating a plurality of xcimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a sample stage for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage with respect to the laser pulses, and a computer for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage relative to the laser pulses.
摘要翻译：公开了用于降低由顺序侧向凝固过程产生的多晶或单晶薄膜的表面粗糙度的系统和方法。在一种布置中，该系统包括用于产生预定注量的多个xCimer激光脉冲的准分子激光器，用于可控制地调制准分子激光脉冲的能量密度的能量密度调制器，使得注量低于完全熔化所需的能量密度薄膜，用于在预定平面中均匀化调制的激光脉冲的光束均质化器，用于接收均质激光脉冲以实现对应于激光脉冲的多晶或单晶薄膜的部分熔化的样品台，用于可控地平移样品台相对于激光脉冲的相对位置，以及用于将准分子脉冲产生和能量密度调制与样品台的相对位置协调的计算机，从而通过样品台的顺序转换来处理多晶或单晶薄膜相对于激光脉冲。

5. 发明申请

US20050032249A1 Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method 有权
标题翻译：通过顺序侧向固化方法在处理期间和之后的薄硅膜的表面平坦化
公开(公告)号：US20050032249A1
公开(公告)日：2005-02-10
申请号：US10939271
申请日：2004-09-13
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： B23K26/00 , B23K26/06 , H01L21/00 , H01L21/20 , H01L21/302 , H01L21/321 , H01L21/84
CPC分类号： H01L21/02686 , B23K26/06 , B23K26/0622 , B23K26/066 , B23K26/0853 , B23K26/3576 , B23K2101/40 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L21/302 , H01L21/32115 , H01L21/67253 , Y10S438/942
摘要： Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator (120) for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer (144) for homoginizing modulated laser pulses in a predetermined plane, a sample stage (170) for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage (170) with respect to the laser pulses, and a computer (110) for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage (170) to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage (170) relative to the laser pulses.
摘要翻译：公开了用于降低由顺序侧向凝固过程产生的多晶或单晶薄膜的表面粗糙度的系统和方法。在一种布置中，该系统包括用于产生预定注量的多个准分子激光脉冲的准分子激光器（110），用于可控制地调节准分子激光脉冲的能量密度的能量密度调制器（120）需要使薄膜完全熔化的光束均质化器（144），用于使预定平面中的调制激光脉冲同调化，用于接收均质化的激光脉冲以实现多晶或单晶薄膜的部分熔化的样品台（170）对应于激光脉冲，用于可控地平移样品台（170）相对于激光脉冲的相对位置的平移装置，以及用于将准分子脉冲产生和能量密度调制与样品的相对位置协调的计算机（110）（170），从而通过样品台（170）相对于其的顺序平移来处理多晶或单晶薄膜激光脉冲。

6. 发明申请

US20070202668A1 METHODS FOR PRODUCING UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS USING SEQUENTIAL LATERIAL SOLIDIFICATION 失效
标题翻译：用于生产均匀的大颗粒和颗粒边界位置的方法操作的多晶薄膜半导体使用顺序方向固化
公开(公告)号：US20070202668A1
公开(公告)日：2007-08-30
申请号：US11744493
申请日：2007-05-04
申请人： James Im , Robert Sposili , Mark Crowder
发明人： James Im , Robert Sposili , Mark Crowder
IPC分类号： H01L21/20
CPC分类号： B23K26/0622 , B23K26/0626 , B23K26/066 , G03F7/70041 , G03F7/70725 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.
摘要翻译：公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化，均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化，并可控地顺序地翻译一个关系相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

7. 发明申请

US20050158995A1 Low-fluence irradiation for lateral crystallization enabled by a heating source 有权
标题翻译：通过加热源进行横向结晶的低能量照射
公开(公告)号：US20050158995A1
公开(公告)日：2005-07-21
申请号：US11062069
申请日：2005-02-18
申请人： Robert Sposili , Mark Crowder
发明人： Robert Sposili , Mark Crowder
IPC分类号： C30B1/00 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/20 , H01L21/77 , H01L21/84
CPC分类号： H01L21/02686 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/1285
摘要： A process of lateral crystallization comprises providing a silicon film on a substrate surface, exposing a localized substrate region at the substrate surface to a laser heating source, and annealing a portion of the silicon film in thermal contact with the localized substrate region by exposing the silicon film to a low-fluence optical annealing source.
摘要翻译：横向结晶的方法包括在衬底表面上提供硅膜，将衬底表面处的局部衬底区域暴露于激光加热源，以及通过使硅暴露硅来使局部衬底区域热接触的部分硅膜退火薄膜到低能量光学退火源。

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