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1. 发明申请

US20070107655A1 Sub-resolutional laser annealing mask 有权
标题翻译：子解决激光退火掩模
公开(公告)号：US20070107655A1
公开(公告)日：2007-05-17
申请号：US11653057
申请日：2007-01-13
申请人： Yasuhiro Mitani , Apostolos Voutsas , Mark Crowder
发明人： Yasuhiro Mitani , Apostolos Voutsas , Mark Crowder
IPC分类号： C30B23/00 , H01L21/76 , C30B28/14
CPC分类号： C30B29/06 , C30B13/00
摘要： A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension; applying a laser beam having a first energy density to a substrate region; melting a substrate region in response to the first energy density; crystallizing the substrate region; applying a diffracted laser beam to the substrate region; and, in response to the diffracted laser beam, smoothing the substrate region surface. In some aspects of the method, applying a diffracted laser beam to the substrate area includes applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region. The second energy density is in the range of 40% to 70% of the first energy density, and preferably in the range of 50% to 60% of the first energy density.
摘要翻译：提供了具有子分辨率孔径特征的掩模和使用子分辨率掩模图案来平滑退火表面的方法。该方法包括：提供具有第一波长的激光束; 向具有具有第一尺寸的孔的第一掩模部分和具有小于所述第一尺寸的具有第二尺寸的孔的第二掩模部分提供掩模; 将具有第一能量密度的激光束施加到衬底区域; 响应于第一能量密度熔化基底区域; 使衬底区域结晶; 将衍射激光束施加到所述衬底区域; 并且响应于衍射激光束，平滑基板区域表面。在该方法的一些方面中，将衍射激光束施加到衬底区域包括将具有小于第一能量密度的第二能量密度的衍射激光束施加到衬底区域。第二能量密度在第一能量密度的40％至70％的范围内，优选在第一能量密度的50％至60％的范围内。

2. 发明申请

US20050009352A1 Method for optimized laser annealing smoothing 失效
标题翻译：优化激光退火平滑的方法
公开(公告)号：US20050009352A1
公开(公告)日：2005-01-13
申请号：US10913678
申请日：2004-08-05
申请人： Mark Crowder , Yasuhiro Mitani , Apostolos Voutsas
发明人： Mark Crowder , Yasuhiro Mitani , Apostolos Voutsas
IPC分类号： B23K26/06 , H01L21/00 , H01L21/20 , H01L21/302 , H01L21/44 , H01L21/461 , H01L21/84
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026
摘要： A laser annealing mask is provided with cross-hatched sub-resolution aperture patterns. The mask comprises a first section with aperture patterns for transmitting approximately 100% of incident light, and at least one section with cross-hatched sub-resolution aperture patterns for diffracting incident light. In one aspect, a second mask section with cross-hatched sub-resolution aperture patterns has an area adjacent a vertical edge and a third mask section with cross-hatched sub-resolution aperture patterns adjacent the opposite vertical edge, with the first mask section being located between the second and third mask sections. The section with cross-hatched sub-resolution aperture patterns transmits approximately 40% to 70%, and preferably 50% to 60% of incident light energy density. In some aspects, the section with cross-hatched sub-resolution aperture patterns includes a plurality of different cross-hatched aperture patterns. The cross-hatched sub-resolution aperture patterns can be defined by horizontal gap and slits, as well as vertical gap and slits.
摘要翻译：激光退火掩模具有交叉阴影的子分辨率孔径图案。掩模包括具有用于传输大约100％的入射光的孔径图案的第一部分和具有用于衍射入射光的交叉阴影的子分辨率孔径图案的至少一个部分。在一个方面，具有交叉阴影线的子分辨率孔径图案的第二掩模部分具有与垂直边缘相邻的区域和具有与相对的垂直边缘相邻的交叉阴影的子分辨率孔径图案的第三掩模部分，第一掩模部分是位于第二和第三掩模部分之间。具有交叉阴影的子分辨率孔径图案的部分透射入射光能密度的大约40％至70％，优选地为50％至60％。在一些方面，具有交叉阴影的子分辨率孔径图案的部分包括多个不同的交叉阴影孔径图案。交叉阴影的子分辨率孔径图案可以由水平间隙和狭缝以及垂直间隙和狭缝限定。

3. 发明授权

US06607971B1 Method for extending a laser annealing pulse 有权
标题翻译：延长激光退火脉冲的方法
公开(公告)号：US06607971B1
公开(公告)日：2003-08-19
申请号：US10136676
申请日：2002-04-30
申请人： Masao Moriguchi , Apostolos T. Voutsas , Yasuhiro Mitani
发明人： Masao Moriguchi , Apostolos T. Voutsas , Yasuhiro Mitani
IPC分类号： H01L2120
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/6675 , H01L29/78672
摘要： A method for an efficient extended pulse laser annealing process is provided. The method comprises: supplying a substrate with a thickness; selecting an energy density; selecting an extended pulse duration; laser annealing a substrate region; in response to cooling the substrate region, crystallizing the substrate region; and, efficiently extending the lateral growth of crystals in the substrate region. When the substrate has a thickness of approximately 300 Å, the energy density is selected to be in the range of 400 to 500 millijoules pre square centimeter (mJ/cm2). The pulse duration is selected to be in the range between 70 and 120 nanoseconds (ns). More preferably, the pulse duration is selected to be in the range between 90 and 120 ns. Most preferable, the pulse duration is approximately 100 ns. Then, efficiently extending the lateral growth of crystals in the substrate region includes laterally growing crystals at a rate of approximately 0.029 microns per nanosecond. Processes for 500 Å and 1000 Å substrates are also provided.
摘要翻译：提供了一种有效延长脉冲激光退火工艺的方法。该方法包括：向基板供应厚度; 选择能量密度; 选择扩展脉冲持续时间; 激光退火衬底区域; 响应于冷却所述衬底区域，使所述衬底区域结晶; 并且有效地延长晶体在衬底区域中的横向生长。当衬底具有大约的厚度时，能量密度选择在400-500毫焦耳之前的平方厘米（mJ / cm 2）的范围内。脉冲持续时间选择在70和120纳秒（ns）之间的范围内。更优选地，脉冲持续时间被选择在90和120ns之间的范围内。最优选地，脉冲持续时间约为100ns。然后，有效地延长衬底区域中晶体的横向生长包括以每纳秒约0.029微米的速率横向生长的晶体。还提供了500Å和1000Å基板的工艺。

4. 发明授权

US07804647B2 Sub-resolutional laser annealing mask 有权
标题翻译：子解决激光退火掩模
公开(公告)号：US07804647B2
公开(公告)日：2010-09-28
申请号：US11653057
申请日：2007-01-13
申请人： Yasuhiro Mitani , Apostolos T. Voutsas , Mark A. Crowder
发明人： Yasuhiro Mitani , Apostolos T. Voutsas , Mark A. Crowder
IPC分类号： G02B5/18
CPC分类号： C30B29/06 , C30B13/00
摘要： A method for smoothing an annealed surface uses a sub-resolution mask pattern. The method supplies a laser beam having a first wavelength and a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension. A laser beam having a first energy density is applied to a substrate region, melting a substrate region in response to the first energy density and crystallizing the substrate region. A diffracted laser beam is applied to the substrate region, smoothing the substrate region surface. Applying a diffracted laser beam to the substrate area may include applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region.
摘要翻译：用于平滑退火表面的方法使用子分辨率掩模图案。该方法提供具有第一波长和掩模的激光束，其具有具有第一尺寸的孔的第一掩模部分和具有小于第一尺寸的具有第二尺寸的孔的第二掩模部分。具有第一能量密度的激光束被施加到衬底区域，响应于第一能量密度熔化衬底区域并使衬底区域结晶。将衍射激光束施加到衬底区域，使衬底区域表面平滑化。将衍射激光束施加到衬底区域可以包括将具有小于第一能量密度的第二能量密度的衍射激光束施加到衬底区域。

5. 发明申请

US20080003729A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080003729A1
公开(公告)日：2008-01-03
申请号：US11896155
申请日：2007-08-30
申请人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
发明人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277
摘要： A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.
摘要翻译：具有抑制空腔制造的结晶半导体膜的半导体器件及其制造方法本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的基板上形成非晶硅膜，添加金属元素如Ni，用于促进结晶到非晶硅膜，进行热处理以使非晶硅膜结晶，从而在基板上形成晶体硅膜，去除在晶体硅膜表面形成的氧化硅膜，通过含有有机溶剂和氟化物的溶液进行热处理，并向结晶硅膜照射激光或强光。

6. 发明授权

US06959029B2 Apparatus for performing anastomosis 失效
标题翻译：用于进行吻合的装置
公开(公告)号：US06959029B2
公开(公告)日：2005-10-25
申请号：US10897763
申请日：2004-07-22
申请人： Apostolos T. Voutsas , Mark A. Crowder , Yasuhiro Mitani
发明人： Apostolos T. Voutsas , Mark A. Crowder , Yasuhiro Mitani
IPC分类号： B23K26/06 , C30B13/24 , G03F1/00 , H01L21/20 , H01L21/268 , H01L21/768 , H01S3/08
CPC分类号： H01L21/0268 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L21/768
摘要： A wide-slit lateral growth projection mask, projection system, and corresponding crystallization process are provided. The mask includes an opaque region with at least one a transparent slit in the opaque region. The slit has a width in the range of 10X to 50X micrometers, with respect to a X:1 demagnification system, and a triangular-shaped slit end. The triangular-shaped slit end has a triangle height and an aspect ratio in the range of 0.5 to 5. The aspect ratio is defined as triangle height/slit width. In some aspects, the triangular-shaped slit end includes one or more opaque blocking features. In another aspect, the triangular-shaped slit end has stepped-shaped sides. The overall effect of the mask is to promote uniformly oriented grain boundaries, even in the film areas annealed under the slit ends.
摘要翻译：提供了宽缝侧向生长投影掩模，投影系统和相应的结晶过程。掩模包括在不透明区域中具有至少一个透明狭缝的不透明区域。狭缝相对于X：1缩小系统和三角形狭缝端部具有在10X至50X微米范围内的宽度。三角形狭缝端部具有三角形高度和宽度比在0.5至5的范围内。纵横比被定义为三角形高度/狭缝宽度。在一些方面，三角形狭缝端包括一个或多个不透明阻挡特征。在另一方面，三角形狭缝端部具有阶梯状侧面。掩模的整体效果是促进均匀取向的晶界，即使在狭缝端部退火的膜区域中也是如此。

7. 发明授权

US07192479B2 Laser annealing mask and method for smoothing an annealed surface 有权
标题翻译：激光退火掩模和平滑退火表面的方法
公开(公告)号：US07192479B2
公开(公告)日：2007-03-20
申请号：US10124826
申请日：2002-04-17
申请人： Yasuhiro Mitani , Apostolos T. Voutsas , Mark A. Crowder
发明人： Yasuhiro Mitani , Apostolos T. Voutsas , Mark A. Crowder
IPC分类号： H01L21/322
CPC分类号： C30B29/06 , C30B13/00
摘要： A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension; applying a laser beam having a first energy density to a substrate region; melting a substrate region in response to the first energy density; crystallizing the substrate region; applying a diffracted laser beam to the substrate region; and, in response to the diffracted laser beam, smoothing the substrate region surface. In some aspects of the method, applying a diffracted laser beam to the substrate area includes applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region. The second energy density is in the range of 40% to 70% of the first energy density, and preferably in the range of 50% to 60% of the first energy density.
摘要翻译：提供了具有子分辨率孔径特征的掩模和使用子分辨率掩模图案来平滑退火表面的方法。该方法包括：提供具有第一波长的激光束; 向具有具有第一尺寸的孔的第一掩模部分和具有小于所述第一尺寸的具有第二尺寸的孔的第二掩模部分提供掩模; 将具有第一能量密度的激光束施加到衬底区域; 响应于第一能量密度熔化基底区域; 使衬底区域结晶; 将衍射激光束施加到所述衬底区域; 并且响应于衍射激光束，平滑基板区域表面。在该方法的一些方面中，将衍射激光束施加到衬底区域包括将具有小于第一能量密度的第二能量密度的衍射激光束施加到衬底区域。第二能量密度在第一能量密度的40％至70％的范围内，优选在第一能量密度的50％至60％的范围内。

8. 发明授权

US5696003A Method for fabricating a semiconductor device using a catalyst introduction region 失效
标题翻译：使用催化剂引入区域制造半导体器件的方法
公开(公告)号：US5696003A
公开(公告)日：1997-12-09
申请号：US357648
申请日：1994-12-16
申请人： Naoki Makita , Takashi Funai , Yoshitaka Yamamoto , Yasuhiro Mitani , Katsumi Nomura , Tadayoshi Miyamoto , Takamasa Kosai
发明人： Naoki Makita , Takashi Funai , Yoshitaka Yamamoto , Yasuhiro Mitani , Katsumi Nomura , Tadayoshi Miyamoto , Takamasa Kosai
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12
CPC分类号： H01L21/2022 , H01L27/1277 , H01L29/66757 , Y10S148/016
摘要： Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.
摘要翻译：引入非晶硅膜，用于加速结晶的催化剂元素。在将催化剂元素引入岛状图案的非晶硅膜图案化之后，进行结晶化的热处理。因此，引入的催化剂元件仅在岛状图案化的非晶硅膜的内部有效地扩散。结果，获得了晶体生长方向在一个方向上排列并且不具有晶界的高质量晶体硅膜。使用如此形成的晶体硅膜，无论器件尺寸如何，都能在整个基板上有效地制造具有高性能和稳定特性的半导体器件。

9. 发明授权

US07276402B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07276402B2
公开(公告)日：2007-10-02
申请号：US11012171
申请日：2004-12-16
申请人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
发明人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277
摘要： A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof. A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.
摘要翻译：具有抑制空腔制造的结晶半导体膜的半导体器件及其制造方法。根据本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的衬底上形成非晶硅膜，向非晶硅膜中添加用于促进结晶的Ni等金属元素，进行热处理，使结晶非晶硅膜，使得在基板上形成结晶硅膜，通过含有机溶剂和氟化物的溶液进行热处理，除去形成在结晶硅膜表面的氧化硅膜，并照射激光或强力光结晶硅膜。

10. 发明授权

US07029961B2 Method for optimized laser annealing smoothing 失效
标题翻译：优化激光退火平滑的方法
公开(公告)号：US07029961B2
公开(公告)日：2006-04-18
申请号：US10913678
申请日：2004-08-05
申请人： Mark Albert Crowder , Yasuhiro Mitani , Apostolos T. Voutsas
发明人： Mark Albert Crowder , Yasuhiro Mitani , Apostolos T. Voutsas
IPC分类号： H01L21/3205
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/2026
摘要： A laser annealing mask is provided with cross-hatched sub-resolution aperture patterns. The mask comprises a first section with aperture patterns for transmitting approximately 100% of incident light, and at least one section with cross-hatched sub-resolution aperture patterns for diffracting incident light. In one aspect, a second mask section with cross-hatched sub-resolution aperture patterns has an area adjacent a vertical edge and a third mask section with cross-hatched sub-resolution aperture patterns adjacent the opposite vertical edge, with the first mask section being located between the second and third mask sections. The section with cross-hatched sub-resolution aperture patterns transmits approximately 40% to 70%, and preferably 50% to 60% of incident light energy density. In some aspects, the section with cross-hatched sub-resolution aperture patterns includes a plurality of different cross-hatched aperture patterns. The cross-hatched sub-resolution aperture patterns can be defined by horizontal gap and slits, as well as vertical gap and slits.
摘要翻译：激光退火掩模具有交叉阴影的子分辨率孔径图案。掩模包括具有用于传输大约100％的入射光的孔径图案的第一部分和具有用于衍射入射光的交叉阴影的子分辨率孔径图案的至少一个部分。在一个方面，具有交叉阴影线的子分辨率孔径图案的第二掩模部分具有与垂直边缘相邻的区域和具有与相对的垂直边缘相邻的交叉阴影的子分辨率孔径图案的第三掩模部分，第一掩模部分是位于第二和第三掩模部分之间。具有交叉阴影的子分辨率孔径图案的部分透射入射光能密度的大约40％至70％，优选地为50％至60％。在一些方面，具有交叉阴影的子分辨率孔径图案的部分包括多个不同的交叉阴影孔径图案。交叉阴影的子分辨率孔径图案可以由水平间隙和狭缝以及垂直间隙和狭缝限定。

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