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1. 发明授权

US06939661B2 Blocked isocyanate compound-containing composition for forming a radiation absorbing coating and anti-reflective coating formed therefrom 有权
标题翻译：封闭的含异氰酸酯化合物的组合物，用于形成辐射吸收涂层和由其形成的抗反射涂层
公开(公告)号：US06939661B2
公开(公告)日：2005-09-06
申请号：US10232081
申请日：2002-08-30
申请人： Wen-Bing Kang , Ken Kimura , Shoko Matsuo , Yoshinori Nishiwaki , Hatsuyuki Tanaka
发明人： Wen-Bing Kang , Ken Kimura , Shoko Matsuo , Yoshinori Nishiwaki , Hatsuyuki Tanaka
IPC分类号： C08G18/80 , C09D175/04 , G03F7/09 , G03F7/004
CPC分类号： C08G18/80 , C09D175/04 , G02B1/111 , G03F7/091 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/115 , Y10S430/151
摘要： A composition for forming a radiation absorbing coating which comprises an organic solvent, a radiation absorbing polymer or a radiation absorbing material dissolved therein and a crosslinking agent having blocked isocyanate groups. Since the isocyanate groups of the crosslinking agent have been blocked, the composition containing the crosslinking agent has excellent storage stability. When the composition applied to a substrate and then baked, crosslinking proceeds to give an antireflective coating, which does not intermix with a resist layer to be formed thereon by coating and is free from diffusion of a photo-generated acid thereinto from the resist layer. As a result, a resist image free from footing or scum can be formed.
摘要翻译：一种用于形成辐射吸收涂层的组合物，其包含溶解在其中的有机溶剂，辐射吸收聚合物或辐射吸收材料以及具有封闭的异氰酸酯基团的交联剂。由于交联剂的异氰酸酯基团已经被阻断，所以含有交联剂的组合物具有优异的储存稳定性。当将组合物施加到基底上然后烘烤时，进行交联以得到抗反射涂层，其不与通过涂覆在其上形成的抗蚀剂层混合，并且其中没有光抗蚀剂层中的光产生的酸的扩散。结果，可以形成没有基脚或浮渣的抗蚀剂图像。

2. 发明授权

US06465161B1 Method for forming resist pattern 失效
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US06465161B1
公开(公告)日：2002-10-15
申请号：US09600612
申请日：2000-07-17
申请人： Wen-Bing Kang , Shoko Matsuo , Ken Kimura , Yoshinori Nishiwaki , Hatsuyuki Tanaka
发明人： Wen-Bing Kang , Shoko Matsuo , Ken Kimura , Yoshinori Nishiwaki , Hatsuyuki Tanaka
IPC分类号： G03F700
CPC分类号： G03F7/16 , G03F7/0045 , G03F7/091
摘要： In a process for manufacturing integrated circuit elements or the like by photolithography, a method for reducing detrimental influence on resist shape due to properties of a substrate or acidity of substrate surface in case where a chemically amplified resist or the like is used as a photoresist, and a substrate-treating agent composition to be used for this method are described. The substrate-treating agent composition comprises a solution containing a salt between at least one basic compound selected from among primary, secondary and tertiary amines and nitrogen-containing heterocyclic compounds and an organic acid such as a sulfonic acid or a carboxylic acid. This composition is coated on a substrate surface having thereon a bottom anti-reflective coating such as SiON layer, baked and, if necessary washed, then a chemically amplified resist is coated on the thus-treated substrate, exposed and developed to form a resist pattern on the substrate.
摘要翻译：在通过光刻制造集成电路元件等的方法中，使用化学放大型抗蚀剂等作为光致抗蚀剂的情况下，由于基板性质或基板表面的酸度降低对抗蚀剂形状的有害影响的方法，并描述用于该方法的底物处理剂组合物。底物处理剂组合物包含含有至少一种选自伯胺，仲胺和叔胺的碱性化合物和含氮杂环化合物之间的盐和有机酸如磺酸或羧酸的溶液。将该组合物涂布在其上具有诸如SiON层的底部抗反射涂层的基底表面上，烘烤并且如果需要洗涤，然后将化学放大的抗蚀剂涂覆在如此处理的基底上，暴露并显影以形成抗蚀剂图案在基板上。

3. 发明授权

US06465148B1 Composition for light absorption film formation containing blocked isocyanate compound and antireflection film formed therefrom 有权
标题翻译：含有由其形成的封端异氰酸酯化合物和抗反射膜的吸光膜形成用组合物
公开(公告)号：US06465148B1
公开(公告)日：2002-10-15
申请号：US09486843
申请日：2000-05-23
申请人： Wen-Bing Kang , Ken Kimura , Shoko Matsuo , Yoshinori Nishiwaki , Hatsuyuki Tanaka
发明人： Wen-Bing Kang , Ken Kimura , Shoko Matsuo , Yoshinori Nishiwaki , Hatsuyuki Tanaka
IPC分类号： G03C173
CPC分类号： C08G18/80 , C09D175/04 , G02B1/111 , G03F7/091 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/115 , Y10S430/151
摘要： A composition for forming a radiation absorbing coating which comprises an organic solvent, a radiation absorbing polymer or a radiation absorbing material dissolved therein and a crosslinking agent having blocked isocyanate groups. Since the isocyanate groups of the crosslinking agent have been blocked, the composition containing the crosslinking agent has excellent storage stability. When the composition applied to a substrate and then baked, crosslinking proceeds to give an antireflective coating, which does not intermix with a resist layer to be formed thereon by coating and is free from diffusion of a photo-generated acid thereinto from the resist layer. As a result, a resist image free from footing or scum can be formed.
摘要翻译：一种用于形成辐射吸收涂层的组合物，其包含溶解在其中的有机溶剂，辐射吸收聚合物或辐射吸收材料以及具有封闭的异氰酸酯基团的交联剂。由于交联剂的异氰酸酯基团已经被阻断，所以含有交联剂的组合物具有优异的储存稳定性。当将组合物施加到基底上然后烘烤时，进行交联以得到抗反射涂层，其不与通过涂覆在其上形成的抗蚀剂层混合，并且其中没有光抗蚀剂层中的光产生的酸的扩散。结果，可以形成没有基脚或浮渣的抗蚀剂图像。

4. 发明授权

US06255405B1 Light-absorbing polymers and application thereof to anti-reflection film 有权
标题翻译：吸光聚合物及其应用于抗反射膜
公开(公告)号：US06255405B1
公开(公告)日：2001-07-03
申请号：US09424128
申请日：2000-03-23
申请人： Wen-Bing Kang , Yoshinori Nishiwaki , Ken Kimura , Syoko Matsuo , Hatsuyuki Tanaka
发明人： Wen-Bing Kang , Yoshinori Nishiwaki , Ken Kimura , Syoko Matsuo , Hatsuyuki Tanaka
IPC分类号： C08F12008
CPC分类号： G03F7/091 , C08F8/14 , C08F8/30 , C09D5/32 , C08F220/00
摘要： A high-performance anti-reflective coating which highly absorbs a given light, e.g., deep ultraviolet rays, tenaciously adheres to substrates upon coating formation, is satisfactory in covering, and eliminates the influence of standing waves in the production of integrated circuits; novel light-absorbing polymers for forming the anti-reflective coating; and a process for producing the polymers. One of the polymers is produced by esterifying a copolymer comprising carboxylic anhydride groups and/or dicarboxylic acid groups such as maleic acid as basic recurring units with a hydroxylated aromatic chromophore. The unreacted carboxylic acid groups or acid anhydride groups remaining in the esterified light-absorbing polymer may be amidated and/or imidized with an aminated aromatic compound. Each of these polymers is dissolved in an organic solvent comprising an alcohol, aromatic hydrocarbon, ketone, ester, or combination of these, and the solution is applied to a substrate and then baked to form an anti-reflective coating.
摘要翻译：在涂层形成时，高度吸收给定光（例如深紫外线）强力粘附于基材的高性能抗反射涂层在覆盖时是令人满意的，并且消除驻波在集成电路生产中的影响; 用于形成抗反射涂层的新型光吸收聚合物; 和聚合物的制造方法。其中一种聚合物是通过将包含羧酸酐基团和/或二羧酸基团如马来酸的共聚物作为碱性重复单元与羟基化芳族发色团酯化而制备的。残留在酯化光吸收聚合物中的未反应的羧酸基团或酸酐基团可以用胺化芳族化合物酰胺化和/或酰亚胺化。将这些聚合物中的每一种溶解在包含醇，芳族烃，酮，酯或它们的组合的有机溶剂中，并将溶液施加到基材上，然后烘焙以形成抗反射涂层。

5. 发明授权

US06277750B1 Composition for bottom reflection preventive film and novel polymeric dye for use in the same 失效
标题翻译：用于底部防反射膜的组合物和用于其的新型聚合物染料
公开(公告)号：US06277750B1
公开(公告)日：2001-08-21
申请号：US09508624
申请日：2000-06-27
申请人： Georg Pawlowski , Munirathna Padmanaban , Wen-Bing Kang , Hatsuyuki Tanaka , Ken Kimura , Yoshinori Nishiwaki
发明人： Georg Pawlowski , Munirathna Padmanaban , Wen-Bing Kang , Hatsuyuki Tanaka , Ken Kimura , Yoshinori Nishiwaki
IPC分类号： H01L2100
CPC分类号： G03F7/091 , C08F8/28 , C08F2800/10 , G03F7/0382 , G03F7/0392 , C08F8/48 , C08F16/06
摘要： As a bottom anti-reflective coating material for use in photolithography, polymer dyes represented by following general formula are used. The polymer dyes are able to form a bottom anti-reflective coating having good film formation properties, good absorption properties at exposure wavelength, good step coverage, non-intermixing with photoresist and high etch rate. wherein R represents H or a substituted or non-substituted alkyl, cycloalkyl, or aryl group, R1 represents a substituted or non-substituted alkyl or aryl, or a —COOR3 group in which R3 represents an alkyl group, R2 represents a substituted or non-substituted alkyl, cycloalkyl, or aryl group, D is an organic chromophore which absorbs at the exposure wavelength (150-450 nm) and represents a substituted or non-substituted aryl, condensed aryl, or heteroaryl group, m and o are any integer above zero, and n, p and q are any integer including zero.
摘要翻译：作为用于光刻的底部抗反射涂层材料，使用由以下通式表示的聚合物染料。聚合物染料能够形成底部抗反射涂层，其具有良好的成膜性能，在曝光波长下具有良好的吸收性能，良好的步骤覆盖率，与光致抗蚀剂的非混合和高蚀刻速率。其中R表示H或取代或未取代的烷基，环烷基或芳基，R 1表示取代或未取代的烷基或芳基或其中R 3表示烷基的-COOR 3基团，R 2表示取代或未取代的烷基，环烷基或芳基，D 是在曝光波长（150-450nm）下吸收并表示取代或未取代的芳基，缩合芳基或杂芳基的有机发色团，m和o是大于零的任何整数，n，p和q是任何整数包括零。

6. 发明授权

US07857985B2 Metal-polishing liquid and chemical mechanical polishing method using the same 失效
标题翻译：金属抛光液和化学机械抛光方法使用相同
公开(公告)号：US07857985B2
公开(公告)日：2010-12-28
申请号：US11699406
申请日：2007-01-30
申请人： Katsuhiro Yamashita , Kenji Takenouchi , Tomoo Kato , Yoshinori Nishiwaki , Mihoko Ishima
发明人： Katsuhiro Yamashita , Kenji Takenouchi , Tomoo Kato , Yoshinori Nishiwaki , Mihoko Ishima
IPC分类号： C03C15/00 , C03C25/68
CPC分类号： C09G1/02 , C09K3/1445 , C09K3/1463 , H01L21/3212
摘要： The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.
摘要翻译：本发明提供了一种金属抛光液，其包含氧化剂和胶体二氧化硅，其中胶体二氧化硅的一部分表面被铝原子覆盖，并使用化学机械抛光方法。可以包含氨基酸，具有异噻唑啉-3-酮骨架的化合物，有机酸，钝化成膜剂，阳离子表面活性剂，非离子表面活性剂和水溶性聚合物。在半导体装置的制造中使用的化学机械抛光中使用的金属研磨液，能够使被研磨对象的低凹陷，能够进行抛光面的面内均匀性优异的抛光。

7. 发明申请

US20080173328A1 Cleaning liquid and cleaning method using the same 有权
标题翻译：清洗液和使用其的清洗方法
公开(公告)号：US20080173328A1
公开(公告)日：2008-07-24
申请号：US11898271
申请日：2007-09-11
申请人： Yoshinori Nishiwaki
发明人： Yoshinori Nishiwaki
IPC分类号： B08B3/08 , B08B1/00 , C11D3/20 , C11D1/22 , C11D3/37
CPC分类号： C11D11/0047 , C11D1/22 , C11D1/24 , C11D1/345 , C11D3/2082 , C11D3/2086 , C11D3/3703 , C11D3/3707 , C11D3/3765 , C11D3/378 , H01L21/02074
摘要： A cleaning liquid used in cleaning of a substrate for use in semiconductor devices conducted after chemical mechanical polishing in manufacture of semiconductor devices, comprising a polycarboxylic acid, an anionic surfactant having an aromatic ring structure in a molecule, a polymer compound having an acidic group on a side chain, and a low molecular weight polyethylene glycol, at the cleaning liquid having a pH of 5 or less, as well as a method of cleaning using the same.
摘要翻译：一种清洗液，其用于半导体装置的半导体装置的清洗中，所述基板包括多元羧酸，分子中具有芳香环结构的阴离子表面活性剂，具有酸性基团的高分子化合物侧链和低分子量聚乙二醇，在pH为5以下的清洗液中，以及使用其的清洗方法。

8. 发明申请

US20070232512A1 Cleaning solution for substrate for use in semiconductor device and cleaning method using the same 审中-公开
标题翻译：用于半导体器件的基板用清洗液及使用其的清洗方法
公开(公告)号：US20070232512A1
公开(公告)日：2007-10-04
申请号：US11727541
申请日：2007-03-27
申请人： Yoshinori Nishiwaki
发明人： Yoshinori Nishiwaki
IPC分类号： C11D7/32
CPC分类号： C11D11/0047 , C11D1/72 , C11D1/721 , C11D3/2075 , C11D3/3707
摘要： A cleaning solution for a substrate for use in a semiconductor device, which is used after a chemical mechanical polishing process in a semiconductor device production process, the cleaning solution containing a nonionic surfactant represented by the following formula (I), an organic acid, and a polyethylene glycol having a number average molecular weight of 5000 or less, wherein the pH of the cleaning solution 5 or less, as well as a cleaning method using the cleaning solution. In the formula (I), R1 to R6 each independently represent a hydrogen atom or alkyl group having 1 to 10 carbon atoms, X and Y each independently represent an ethyleneoxy group or propyleneoxy group, and m and n each independently represent an integer from 0 to 20.
摘要翻译：一种用于半导体器件制造工序中的化学机械研磨工序后使用的半导体装置用基板的清洗液，含有下述式（I）表示的非离子性表面活性剂的清洗液，有机酸，和数均分子量为5000以下的聚乙二醇，其中，清洗液的pH5以下，以及使用该清洗液的清洗方法。在式（I）中，R 1至R 6各自独立地表示氢原子或具有1至10个碳原子的烷基，X和Y各自独立地表示亚乙基氧基基或亚丙氧基，m和n各自独立地表示0〜20的整数。

9. 发明申请

US20070225187A1 Cleaning solution for substrate for use in semiconductor device and cleaning method using the same 审中-公开
标题翻译：用于半导体器件的基板用清洗液及使用其的清洗方法
公开(公告)号：US20070225187A1
公开(公告)日：2007-09-27
申请号：US11723536
申请日：2007-03-20
申请人： Yoshinori Nishiwaki
发明人： Yoshinori Nishiwaki
IPC分类号： C11D7/32
CPC分类号： C11D1/44 , C11D3/0047 , C11D3/2075 , C11D11/0047 , H01L21/02063 , H01L21/02074 , H01L21/3212
摘要： The invention provides a cleaning solution for use in cleaning a substrate for semiconductor device use after a chemical mechanical polishing process has been carried out in production of a semiconductor device. The cleaning solution contains a compound represented by the following formula (I) and an organic acid. In formula (1), R represents a hydrocarbon group, and n and m each independently represent an integer of 2 or more.
摘要翻译：本发明提供了在半导体器件的制造中进行化学机械抛光处理之后，用于清洁用于半导体器件使用的衬底的清洁溶液。清洗液含有下式（I）表示的化合物和有机酸。在式（1）中，R表示烃基，n和m各自独立地表示2以上的整数。

10. 发明申请

US20070072109A1 Thick film or ultrathick film responsive chemical amplification type photosensitive resin composition 审中-公开
标题翻译：厚膜或超薄膜响应化学放大型感光性树脂组合物
公开(公告)号：US20070072109A1
公开(公告)日：2007-03-29
申请号：US10575338
申请日：2004-09-14
申请人： Toshimichi Makii , Yoshinori Nishiwaki , Kazumichi Akashi
发明人： Toshimichi Makii , Yoshinori Nishiwaki , Kazumichi Akashi
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/022
摘要： [Object] To provide a chemically amplified photosensitive resin composition suitable for forming a thick film and a super thick film, which has high sensitivity, high film residual properties, good coating properties, high resolution and a good pattern shape, and which gives a pattern excellent in heat resistance, in a photosensitive resin composition requiring the formation of a thick resist pattern film such as in the formation of a magnetic pole of a magnetic head or of a bump. [Solving means] A chemically amplified photosensitive resin composition including an alkali soluble novolak resin (A), a resin or compound (B) which in itself is insoluble or slightly soluble in alkali, but becomes soluble in alkali by the action of an acid, that is acid generating agent (C), and a photosensitizing agent (D) containing a quinonediazide group, as well as, if necessary, an alkali soluble acrylic resin (E) and a crosslinking agent (F) for improving film quality.
摘要翻译：本发明提供一种适用于形成厚膜和超厚膜的化学放大感光性树脂组合物，其具有高灵敏度，高膜残留性，良好的涂布性能，高分辨率和良好的图案形状，并且具有图案在需要形成厚的抗蚀剂图案膜的感光性树脂组合物中，例如形成磁头或凸块的磁极时，耐热性优异。 [解决方案]一种化学放大型感光性树脂组合物，其含有碱溶性酚醛清漆树脂（A），树脂或化合物（B），其本身不溶或微溶于碱，但通过酸作用而溶于碱，即酸产生剂（C），以及含有醌二叠氮化物基团的光敏剂（D），以及必要时可提高膜质量的碱溶性丙烯酸树脂（E）和交联剂（F）。

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