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1. 发明授权

US07857985B2 Metal-polishing liquid and chemical mechanical polishing method using the same 失效
标题翻译：金属抛光液和化学机械抛光方法使用相同
公开(公告)号：US07857985B2
公开(公告)日：2010-12-28
申请号：US11699406
申请日：2007-01-30
申请人： Katsuhiro Yamashita , Kenji Takenouchi , Tomoo Kato , Yoshinori Nishiwaki , Mihoko Ishima
发明人： Katsuhiro Yamashita , Kenji Takenouchi , Tomoo Kato , Yoshinori Nishiwaki , Mihoko Ishima
IPC分类号： C03C15/00 , C03C25/68
CPC分类号： C09G1/02 , C09K3/1445 , C09K3/1463 , H01L21/3212
摘要： The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.
摘要翻译：本发明提供了一种金属抛光液，其包含氧化剂和胶体二氧化硅，其中胶体二氧化硅的一部分表面被铝原子覆盖，并使用化学机械抛光方法。可以包含氨基酸，具有异噻唑啉-3-酮骨架的化合物，有机酸，钝化成膜剂，阳离子表面活性剂，非离子表面活性剂和水溶性聚合物。在半导体装置的制造中使用的化学机械抛光中使用的金属研磨液，能够使被研磨对象的低凹陷，能够进行抛光面的面内均匀性优异的抛光。

2. 发明授权

US09068153B2 Cleaning composition, cleaning process, and process for producing semiconductor device 有权
标题翻译：清洁组合物，清洁工艺和半导体器件的制造工艺
公开(公告)号：US09068153B2
公开(公告)日：2015-06-30
申请号：US12893964
申请日：2010-09-29
申请人： Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
发明人： Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
IPC分类号： C09K13/06 , C11D11/00 , C11D7/08 , C11D7/50
CPC分类号： G03F7/425 , C09K13/00 , C09K13/06 , C11D7/08 , C11D7/265 , C11D7/3209 , C11D7/3245 , C11D7/34 , C11D7/5013 , C11D11/0047 , G03F7/422 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/31133 , H01L21/32134 , H01L21/32136 , H01L21/32138 , H01L21/32139
摘要： A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.
摘要翻译：提供了用于去除形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，其包括（组分a）水，（组分b）羟胺和/或其盐，（组分c）碱性有机化合物，和（组分d）有机酸，并且具有7至9的pH。还提供了一种清洁方法和使用该清洁组合物的半导体器件的制造方法。

3. 发明授权

US06309166B1 Wafer transfer device 失效
标题翻译：晶圆转移装置
公开(公告)号：US06309166B1
公开(公告)日：2001-10-30
申请号：US09319633
申请日：1999-06-08
申请人： Tomoo Kato , Keiji Kimura
发明人： Tomoo Kato , Keiji Kimura
IPC分类号： B65G4907
CPC分类号： H01L21/67005 , H01L21/67778 , Y10S414/137
摘要： A wafer transfer apparatus for taking out a wafer from a wafer cassette having grooves on both ends for holding circumferential edges of a plurality of wafers by moving a wafer transfer arm in height directions and back and forth directions relative to the wafer cassette. The apparatus comprises a wafer pushing out mechanism for pushing out a wafer on the back of a wafer inlet/outlet side of the wafer cassette into which the transfer arm is inserted. The wafer pushing out mechanism comprises a pushing pin rotatable when it is in contact with the wafer and a driving mechanism for driving the pushing pin so as to push the wafer from the back of the wafer cassette to the wafer inlet/outlet side.
摘要翻译：一种晶片传送装置，用于从具有两端凹槽的晶片盒取出晶片，用于通过相对于晶片盒在高度方向和前后方向上移动晶片传送臂来保持多个晶片的圆周边缘。该装置包括用于推出晶片盒的插入传送臂的晶片入口/出口侧背面的晶片的晶片推出机构。晶片推出机构包括当与晶片接触时可旋转的推压销和用于驱动推销的驱动机构，以将晶片从晶片盒的后部推到晶片入口/出口侧。

4. 发明授权

US06208909B1 Wafer transport device 失效
标题翻译：晶圆输送装置
公开(公告)号：US06208909B1
公开(公告)日：2001-03-27
申请号：US09319615
申请日：1999-06-08
申请人： Tomoo Kato , Keiji Kimura
发明人： Tomoo Kato , Keiji Kimura
IPC分类号： G06F700
CPC分类号： H01L21/67265 , H01L21/67778 , Y10S414/137
摘要： Of a plurality of wafers (15) circumferential edge portions of which are held by slot grooves (14) of a wafer cassette (13), the positions of a wafer (15) to be transferred and the wafers (15) above and beneath it are detected by a first sensor (16) and a second sensor (17). A calculating unit calculates an amount of bend of each wafer (15) based on the detected information. It is determine, based on the calculation result, whether the transfer arm (18) can be inserted under the wafer (15) to be transferred without contacting with the wafer beneath (15) and whether the wafer (15) to be transferred can be lifted up by the transfer arm (18) without contacting with the wafer above (15).
摘要翻译：在晶片盒（13）的槽槽（14）保持的多个晶片（15）的圆周边缘部分中，待转印的晶片（15）和晶片（15）在其上方和下方的位置由第一传感器（16）和第二传感器（17）检测。计算单元基于检测到的信息来计算每个晶片（15）的弯曲量。基于计算结果确定传送臂（18）是否能够被插入到晶片（15）下方以便不与下面的晶片（15）接触，并且被转印的晶片（15）是否可以是由传递臂（18）提升而不与上述晶片（15）接触。

5. 发明授权

US09202709B2 Polishing liquid for metal and polishing method using the same 有权
标题翻译：抛光液用于金属和抛光方法使用
公开(公告)号：US09202709B2
公开(公告)日：2015-12-01
申请号：US12399984
申请日：2009-03-09
申请人： Takamitsu Tomiga , Tomoo Kato , Tadashi Inaba , Masaru Yoshikawa
发明人： Takamitsu Tomiga , Tomoo Kato , Tadashi Inaba , Masaru Yoshikawa
IPC分类号： C09K13/06 , H01L21/321 , C09G1/02 , C09K3/14
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1454 , C09K3/1463
摘要： A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.
摘要翻译：提供了一种用于抛光金属的液体，其用于在制造半导体器件时用于化学和机械抛光包括铜或铜合金的导体膜，并且还提供了使用该金属抛光液的抛光方法。液体包括：（a）平均一次粒径为10nm〜25nm，平均二次粒径为50nm〜70nm的胶态二氧化硅粒子; （b）金属防腐剂; （c）至少一种选自表面活性剂和水溶性高分子化合物的化合物; （d）氧化剂; 和（e）有机酸。

6. 发明授权

US06241456B1 Wafer inspecting apparatus and method 有权
标题翻译：晶圆检查装置及方法
公开(公告)号：US06241456B1
公开(公告)日：2001-06-05
申请号：US09569262
申请日：2000-05-11
申请人： Tomoo Kato , Tatsuo Nirei
发明人： Tomoo Kato , Tatsuo Nirei
IPC分类号： B65G4907
CPC分类号： H01L21/67288 , G01N21/9501 , H01L21/6838 , H01L22/12 , Y10S414/136 , Y10S414/141
摘要： This invention provides a wafer inspecting apparatus which enables macroscopic inspection of the entire surface of a wafer. According to the wafer inspecting apparatus of this invention, the edge portion of a wafer 8 is held by suction with the distal ends of wafer holding portions 702 of a wafer holding arm 7, and first-time observation of the lower surface of the wafer 8 is performed. Then, the wafer 8 is transported onto a center table 6. The center table 6 is rotated through a predetermined angle. The edge portion of the wafer 8 is held by suction again with the distal ends of the wafer holding portions 702 of the wafer holding arm 7. Then, second-time observation of the lower surface of the wafer 8 is performed.
摘要翻译：本发明提供一种晶片检查装置，其能够对整个晶片的整个表面进行宏观检查。根据本发明的晶片检查装置，通过用晶片保持臂7的晶片保持部分702的远端进行抽吸来保持晶片8的边缘部分，并且首先观察晶片8的下表面被执行。然后，晶片8被输送到中心台6上。中心台6旋转预定的角度。晶片8的边缘部分与晶片保持臂7的晶片保持部分702的远端再次被吸力保持。然后，进行晶片8的下表面的第二次观察。

7. 发明授权

US08202445B2 Metal polishing composition and chemical mechanical polishing method 有权
标题翻译：金属抛光组合物和化学机械抛光方法
公开(公告)号：US08202445B2
公开(公告)日：2012-06-19
申请号：US12404353
申请日：2009-03-16
申请人： Sumi Takamiya , Tadashi Inaba , Atsushi Mizutani , Tomoo Kato , Toshiyuki Saie
发明人： Sumi Takamiya , Tadashi Inaba , Atsushi Mizutani , Tomoo Kato , Toshiyuki Saie
IPC分类号： C09K13/06
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409
摘要： The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring.
摘要翻译：本发明提供一种用于制造半导体器件的化学机械抛光中的金属抛光组合物，包括氧化剂，磨粒和至少一种选自下式（I）表示的化合物和下述式式（II）。本发明还提供了使用金属抛光组合物的化学机械抛光方法。在式（I）中，R 1表示氢原子或烷基，Ph表示苯基。式（II）中，R 2表示氢原子或烷基，Ph表示苯基。

8. 发明授权

US06780344B2 Garnet ferrite for low-insertion-loss non-reciprocal circuit, method for preparing the same, and non-reciprocal circuit device including the same 失效
标题翻译：用于低插入损耗不可逆电路的石榴石铁氧体，及其制备方法，以及包括其的不可逆电路装置
公开(公告)号：US06780344B2
公开(公告)日：2004-08-24
申请号：US10278311
申请日：2002-10-23
申请人： Yutaka Yamamoto , Tomoo Kato , Toshio Takahashi , Hitoshi Onishi
发明人： Yutaka Yamamoto , Tomoo Kato , Toshio Takahashi , Hitoshi Onishi
IPC分类号： H01F134
CPC分类号： C04B35/6261 , C04B35/2675 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3262 , C04B2235/3274 , C04B2235/3286 , C04B2235/764 , C04B2235/79 , H01F1/346
摘要： A garnet ferrite used for a non-reciprocal circuit device contains Fe in an amount lower than the value derived from stoichiometry by 0.5% to 5%, and more preferably by 1% to 3%. The garnet ferrite can exhibit a low insertion loss in a high-frequency band of more than 5 MHz.
摘要翻译：用于不可逆电路装置的石榴石铁氧体含有低于化学计量值0.5％至5％，更优选1％至3％的Fe。在大于5MHz的高频带中，石榴石铁氧体可能具有低插入损耗。

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