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1. 发明授权

US06440801B1 Structure for folded architecture pillar memory cell 有权
标题翻译：折叠式立柱式记忆体结构
公开(公告)号：US06440801B1
公开(公告)日：2002-08-27
申请号：US09604901
申请日：2000-06-28
申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Howard L. Kalter , Jack A. Mandelman , Paul A. Rabidoux , Jeffrey J. Welser
发明人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Howard L. Kalter , Jack A. Mandelman , Paul A. Rabidoux , Jeffrey J. Welser
IPC分类号： H01L21336
CPC分类号： H01L27/11556 , H01L27/10808 , H01L27/10823 , H01L27/10841 , H01L27/10897 , H01L27/115
摘要： A densely packed array of vertical semiconductor devices having pillars and methods of making thereof are disclosed. The array has rows of wordlines and columns of bitlines. The array has vertical pillars, each having two wordlines, one active and the other passing for each, cell. Two wordlines are formed per pillar on opposite pillar sidewalls which are along the row direction. The threshold voltage of the pillar device is raised on the side of the pillar touching the passing wordline, thereby permanently shutting off the pillar device during the cell operation and isolating the pillar from the voltage variations on the passing wordline. The isolated wordlines allow individual cells to be addressed and written via direct tunneling, in both volatile and non-volatile memory cell configurations. For Gbit DRAM application, stack or trench capacitors may be formed on the pillars, or in trenches surrounding the pillars, respectively.
摘要翻译：公开了一种具有支柱的紧密堆叠的垂直半导体器件阵列及其制造方法。该阵列具有字线和位线列。阵列具有垂直柱，每个具有两个字线，一个有效，另一个通过每个单元格。在沿着行方向的相对的支柱侧壁上的每个柱形成两个字线。支柱装置的阈值电压在柱体侧面升高，接触通过字线，从而在电池工作期间永久地关闭支柱装置，并将支柱与通过字线上的电压变化隔离。孤立的字线允许在易失性和非易失性存储单元配置中通过直接隧道寻址和写入各个单元。对于Gbit DRAM应用，可以在支柱上或在柱子周围的沟槽中分别形成堆叠或沟槽电容器。

2. 发明授权

US6114725A Structure for folded architecture pillar memory cell 失效
标题翻译：折叠式立柱式记忆体的新型结构
公开(公告)号：US6114725A
公开(公告)日：2000-09-05
申请号：US93928
申请日：1998-06-09
申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Howard L. Kalter , Jack A. Mandelman , Paul A. Rabidoux , Jeffrey J. Welser
发明人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Howard L. Kalter , Jack A. Mandelman , Paul A. Rabidoux , Jeffrey J. Welser
IPC分类号： H01L21/8242 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/94 , H01L31/113 , H01L31/119 , H01L31/62
CPC分类号： H01L27/11556 , H01L27/10808 , H01L27/10823 , H01L27/10841 , H01L27/10897 , H01L27/115
摘要： A densely packed array of vertical semiconductor devices having pillars and methods of making thereof are disclosed. The array has rows of wordlines and columns of bitlines. The array has vertical pillars, each having two wordlines, one active and the other passing for each cell. Two wordlines are formed per pillar on opposite pillar sidewalls which are along the row direction. The threshold voltage of the pillar device is raised on the side of the pillar touching the passing wordline, thereby permanently shutting off the pillar device during the cell operation and isolating the pillar from the voltage variations on the passing wordline. The isolated wordlines allow individual cells to be addressed and written via direct tunneling, in both volatile and non-volatile memory cell configurations. For Gbit DRAM application, stack or trench capacitors may be formed on the pillars, or in trenches surrounding the pillars, respectively.
摘要翻译：公开了一种具有支柱的紧密堆叠的垂直半导体器件阵列及其制造方法。该阵列具有字线和位线列。阵列具有垂直柱，每个具有两个字线，一个有效，另一个通过每个单元格。在沿着行方向的相对的支柱侧壁上的每个柱形成两个字线。支柱装置的阈值电压在柱体侧面升高，接触通过字线，从而在电池工作期间永久地关闭支柱装置，并将支柱与通过字线上的电压变化隔离。孤立的字线允许在易失性和非易失性存储单元配置中通过直接隧道寻址和写入各个单元。对于Gbit DRAM应用，可以在支柱上或在柱子周围的沟槽中分别形成堆叠或沟槽电容器。

3. 发明授权

US06429080B2 Multi-level dram trench store utilizing two capacitors and two plates 失效
标题翻译：使用两个电容器和两个电路板的多层次的沟渠商店
公开(公告)号：US06429080B2
公开(公告)日：2002-08-06
申请号：US09793517
申请日：2001-02-27
申请人： Toshiharu Furukawa , David V. Horak , Howard L. Kalter
发明人： Toshiharu Furukawa , David V. Horak , Howard L. Kalter
IPC分类号： H01L21336
CPC分类号： G11C11/565 , G11C11/404 , H01L27/108 , H01L27/10864 , H01L27/1087 , H01L27/10882
摘要： A multi-level memory cell capable of storing two or three bits of digital data occupies only four lithographic squares and requires only one or two logic level voltage sources, respectively. High noise immunity derives from integration of the multi-level signal in the memory cell directly from logic level digital signals applied to two capacitors (as well as the bit line for the eight level mode of operation) by using capacitors having different values in order to avoid digital-to-analog conversion during writing. The capacitors can be simultaneously written and read to reduce memory cycle time. Transistor channels and capacitor connections are formed on adjacent semiconductor pillars using plugs of semiconductor material between pillars as common gate structures and connections. Opposite surfaces of the pillars also serve as storage nodes with common capacitor plates formed by conformal deposition between rows of plugs and pillars.
摘要翻译：能够存储两位或三位数字数据的多级存储器单元仅占用四个光刻平面，并且仅分别仅需要一个或两个逻辑电平电压源。通过使用具有不同值的电容器，可以直接从施加到两个电容器的逻辑电平数字信号（以及八电平工作模式的位线）将存储单元中的多电平信号集成到高抗噪声性能避免在写入过程中进行数模转换。电容器可以同时写入和读取，以减少存储周期时间。晶体管通道和电容器连接使用在柱之间的半导体材料的塞子作为公共栅极结构和连接形成在相邻的半导体柱上。支柱的相对表面还用作具有通过塞子和柱之间的共形沉积形成的公共电容器板的存储节点。

4. 发明授权

US06282115B1 Multi-level DRAM trench store utilizing two capacitors and two plates 失效
标题翻译：使用两个电容器和两个板的多级DRAM沟槽存储器
公开(公告)号：US06282115B1
公开(公告)日：2001-08-28
申请号：US09469275
申请日：1999-12-22
申请人： Toshiharu Furukawa , David V. Horak , Howard L. Kalter
发明人： Toshiharu Furukawa , David V. Horak , Howard L. Kalter
IPC分类号： G11C1124
CPC分类号： G11C11/565 , G11C11/404 , H01L27/108 , H01L27/10864 , H01L27/1087 , H01L27/10882
摘要： A multi-level memory cell capable of storing two or three bits of digital data occupies only four lithographic squares and requires only one or two logic level voltage sources, respectively. High noise immunity derives from integration of the multi-level signal in the memory cell directly from logic level digital signals applied to two capacitors (as well as the bit line for the eight level mode of operation) by using capacitors having different values in order to avoid digital-to-analog conversion during writing. The capacitors can be simultaneously written and read to reduce memory cycle time. Transistor channels and capacitor connections are formed on adjacent semiconductor pillars using plugs of semiconductor material between pillars as common gate structures and connections. Opposite surfaces of the pillars also serve as storage nodes with common capacitor plates formed by conformal deposition between rows of plugs and pillars.
摘要翻译：能够存储两位或三位数字数据的多级存储器单元仅占用四个光刻平面，并且仅分别仅需要一个或两个逻辑电平电压源。通过使用具有不同值的电容器，可以直接从施加到两个电容器的逻辑电平数字信号（以及八电平工作模式的位线）将存储单元中的多电平信号集成到高抗噪声性能避免在写入过程中进行数模转换。电容器可以同时写入和读取，以减少存储周期时间。晶体管通道和电容器连接使用在柱之间的半导体材料的塞子作为公共栅极结构和连接形成在相邻的半导体柱上。支柱的相对表面还用作具有通过塞子和柱之间的共形沉积形成的公共电容器板的存储节点。

5. 发明授权

US06369671B1 Voltage controlled transmission line with real-time adaptive control 有权
标题翻译：电压控制传输线具有实时自适应控制
公开(公告)号：US06369671B1
公开(公告)日：2002-04-09
申请号：US09281412
申请日：1999-03-30
申请人： Claude L. Bertin , Anthony R. Bonaccio , Howard L. Kalter , Thomas M. Maffitt , Jack A. Mandelman , Edward J. Nowak , William R. Tonti
发明人： Claude L. Bertin , Anthony R. Bonaccio , Howard L. Kalter , Thomas M. Maffitt , Jack A. Mandelman , Edward J. Nowak , William R. Tonti
IPC分类号： H01P1185
CPC分类号： G11C7/12
摘要： A semiconductor structure having a substrate, an insulator above a portion of the substrate, a conductor above the insulator; and at least two contact regions in the substrate on opposite sides of the portion of the substrate, wherein a voltage between the contact regions modulates a capacitance of the conductor.
摘要翻译：一种具有衬底的半导体结构，在衬底的一部分上方的绝缘体，绝缘体上方的导体; 以及在所述衬底的所述部分的相对侧上的所述衬底中的至少两个接触区域，其中所述接触区域之间的电压调制所述导体的电容。

6. 发明授权

US06255899B1 Method and apparatus for increasing interchip communications rates 失效
标题翻译：提高芯片间通信速率的方法和装置
公开(公告)号：US06255899B1
公开(公告)日：2001-07-03
申请号：US09388164
申请日：1999-09-01
申请人： Claude L. Bertin , Anthony R. Bonaccio , Erik L. Hedberg , Howard L. Kalter , Thomas M. Maffitt , Jack A. Mandelman , Edward J. Nowak , William R. Tonti
发明人： Claude L. Bertin , Anthony R. Bonaccio , Erik L. Hedberg , Howard L. Kalter , Thomas M. Maffitt , Jack A. Mandelman , Edward J. Nowak , William R. Tonti
IPC分类号： H01L2500
CPC分类号： H01L25/0657 , H01L24/73 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/16235 , H01L2224/17181 , H01L2224/32225 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/06517 , H01L2225/0652 , H01L2225/06555 , H01L2225/06589 , H01L2924/00014 , H01L2924/09701 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15192 , H01L2924/16152 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： An assembly is provided that includes an interposer having first and second substantially flat, opposed surfaces, and at least one speed critical signal line extending directly through the interposer from the first surface to the second surface. A first IC is coupled to the first surface of the interposer and has a first external connection mechanism coupled to the at least one speed critical signal line. A second IC is coupled to the second surface of the interposer and has a first external connection mechanism coupled to the at least one speed critical signal line. Preferably at least one non-speed critical signal line is provided within the interposer and is coupled to a second external connection mechanism of the first IC and/or the second IC for delivering non-speed critical signals thereto or for receiving such signals therefrom. A chip carrier having a cavity formed therein also may be provided wherein the second surface of the interposer is coupled to the chip carrier and the second IC is disposed within the cavity. One or more carrier signal lines may be provided within the chip carrier and coupled between the interposer and the second IC. The first and/or the second IC also may comprise control logic adapted to select a number of drivers within either IC that drive a particular signal line.
摘要翻译：提供了一种组件，其包括具有第一和第二基本上平坦的相对表面的插入件以及至少一个直线从第一表面延伸到第二表面的速度临界信号线。第一IC耦合到插入器的第一表面，并且具有耦合到至少一个速度临界信号线的第一外部连接机构。第二IC耦合到插入器的第二表面，并且具有耦合到至少一个速度临界信号线的第一外部连接机构。优选地，在插入器内提供至少一个非速度临界信号线，并且耦合到第一IC和/或第二IC的第二外部连接机构，用于向其递送非速度关键信号或用于从其接收这样的信号。还可以提供其中形成有空腔的芯片载体，其中插入器的第二表面耦合到芯片载体，并且第二IC设置在空腔内。可以在芯片载体内提供一个或多个载波信号线，并且耦合在插入器和第二IC之间。第一和/或第二IC还可以包括适于选择驱动特定信号线的IC内的多个驱动器的控制逻辑。

7. 发明授权

US06177818B1 Complementary depletion switch body stack off-chip driver 失效
标题翻译：互补耗尽开关体堆栈片外驱动
公开(公告)号：US06177818B1
公开(公告)日：2001-01-23
申请号：US09303508
申请日：1999-04-30
申请人： Claude L. Bertin , Anthony R. Bonaccio , Howard L. Kalter , Thomas M. Maffitt , Jack A. Mandelman , William R. Tonti
发明人： Claude L. Bertin , Anthony R. Bonaccio , Howard L. Kalter , Thomas M. Maffitt , Jack A. Mandelman , William R. Tonti
IPC分类号： H03B2100
CPC分类号： H03K19/09482 , H03K19/00361 , H03K19/018521
摘要： An off-chip driver circuit including an enhancement PFET, a depletion PFET, a depletion NFET and an enhancement NFET connected in series. The large enhancement PFET and large enhancement NFET turn off the OCD in tri-state and to turn off the unused half of the OCD to prevent overlap current when driving a ‘0’ or a ‘1’. A first gate signal is applied to the gate of the enhancement PFET and a second gate signal is applied to the enhancement NFET. A fixed voltage is connected to the gate of the depletion NFET and ground to gate of the depletion PFET. An output signal is obtained from a node between the depletion PFET and depletion NFET devices. In another embodiment, a reflection/overshoot sensor 60 is added. The output of sensor is connected to the body of a depletion PFET and an NFET. The feedback from sensor is such that the threshold voltage of the depletion devices are made more positive if the sensor detects that the output is being over-driven. A more positive threshold voltage will reduce the driver's IDS, but leaves the device in the linear mode.
摘要翻译：包括增强型PFET，耗尽型PFET，耗尽型NFET和增强型NFET的片外驱动电路。大增强型PFET和大增强型NFET在三态关闭OCD并关闭OCD的未使用的一半以防止在驱动“0”或“1”时重叠电流。第一栅极信号被施加到增强PFET的栅极，并且第二栅极信号被施加到增强NFET。固定电压连接到耗尽型NFET的栅极，并连接到耗尽PFET的栅极。从耗尽PFET和耗尽NFET器件之间的节点获得输出信号。在另一个实施例中，添加了反射/过冲传感器60。传感器的输出连接到耗尽PFET和NFET的主体。来自传感器的反馈使得如果传感器检测到输出被过驱动，则耗尽装置的阈值电压变得更为正。更正的阈值电压将减少驾驶员的IDS，但使设备处于线性模式。

8. 发明授权

US06177809B1 Redundant input/output driver circuit 失效
标题翻译：冗余输入/输出驱动电路
公开(公告)号：US06177809B1
公开(公告)日：2001-01-23
申请号：US09322470
申请日：1999-05-28
申请人： William R. Tonti , Jack A. Mandelman , Anthony R. Bonaccio , Claude L. Bertin , Howard L. Kalter , John A. Fifield
发明人： William R. Tonti , Jack A. Mandelman , Anthony R. Bonaccio , Claude L. Bertin , Howard L. Kalter , John A. Fifield
IPC分类号： H03K19094
CPC分类号： H03K19/00384 , H03K19/0005
摘要： A first, “known good” reference off-chip driver circuit actuated by an initial logic program (IPL) input signal has an output lead connected as one of the inputs to a comparator circuit for providing a reference off-chip driver output signal. A second off-chip driver circuit including a plurality of “n” separate driver circuit paths connected to input signal and produces output signals connected to a common node to provide output driver signals to the common node. The common node is connected to the second input of the comparator circuit for comparison with the reference off-chip driver output signal from the first off-chip driver circuit to determine the operating state of the second off-chip driver circuit with respect to the operating state of the first off-chip driver circuit.
摘要翻译：由初始逻辑程序（IPL）输入信号驱动的第一个“已知的良好”参考芯片外驱动电路具有作为输入端之一的输出引线连接到比较器电路，用于提供参考片外驱动器输出信号。包括连接到输入信号的多个“n”个分离的驱动器电路路径并产生连接到公共节点的输出信号以向公共节点提供输出驱动器信号的第二片外驱动器电路。公共节点连接到比较器电路的第二输入，用于与来自第一片外驱动器电路的参考芯片外驱动器输出信号进行比较，以确定第二片外驱动器电路相对于操作的运行状态状态的第一个片外驱动电路。

9. 发明授权

US5563086A Integrated memory cube, structure and fabrication 失效
标题翻译：集成存储立方体，结构和制造
公开(公告)号：US5563086A
公开(公告)日：1996-10-08
申请号：US406284
申请日：1995-03-17
申请人： Claude L. Bertin , Wayne J. Howell , Erik L. Hedberg , Howard L. Kalter , Gordon A. Kelley, Jr.
发明人： Claude L. Bertin , Wayne J. Howell , Erik L. Hedberg , Howard L. Kalter , Gordon A. Kelley, Jr.
IPC分类号： G11C5/00 , H01L25/065 , H01L21/70
CPC分类号： H01L25/0657 , G11C5/06 , H01L2224/48091 , H01L2225/0651 , H01L2225/06551 , H01L2225/06555 , H01L2225/06572 , H01L2225/06596 , H01L2924/10253
摘要： An integrated memory cube structure and method of fabrication wherein stacked semiconductor memory chips are integrated by a controlling logic chip such that a more powerful memory architecture is defined with the functional appearance of a single, higher level memory chip. A memory/logic cube is formed having N memory chips and at least one logic chip, with each memory chip of the cube having M memory devices. The controlling logic chip coordinates external communication with the N memory chips such that a single memory chip architecture with N.times.M memory devices appears at the cube's I/O pins. A corresponding fabrication technique includes an approach for facilitating metallization patterning on the side surface of the memory subunit.
摘要翻译：一种集成的存储立方体结构和制造方法，其中堆叠的半导体存储器芯片由控制逻辑芯片集成，使得更强大的存储器架构被定义为单个更高级存储器芯片的功能外观。形成具有N个存储器芯片和至少一个逻辑芯片的存储器/逻辑立方体，其中立方体的每个存储器芯片具有M个存储器件。控制逻辑芯片协调与N个存储器芯片的外部通信，使得具有NxM存储器件的单个存储器芯片架构出现在立方体的I / O引脚处。相应的制造技术包括用于在存储器子单元的侧表面上促进金属化图案化的方法。

10. 发明授权

US4603341A Stacked double dense read only memory 失效
标题翻译：堆叠双密度只读存储器
公开(公告)号：US4603341A
公开(公告)日：1986-07-29
申请号：US530452
申请日：1983-09-08
申请人： Claude L. Bertin , Howard L. Kalter
发明人： Claude L. Bertin , Howard L. Kalter
IPC分类号： G11C17/08 , H01L21/822 , H01L21/8246 , H01L27/00 , H01L27/06 , H01L27/10 , H01L27/112 , H01L29/78 , G11C17/00
CPC分类号： H01L27/11519 , H01L21/8221 , H01L27/0688 , H01L27/112
摘要： A read only memory array of stacked IGFET devices composed of first and second sub-arrays of field effect transistors. The first sub-array of first field effect transistors is formed in a substrate. Each of the first field effect transistor devices is responsive to a polysilicon gate electrode. The second sub-array of second field effect transistors is formed in a layer of laser annealed polysilicon material which overlies the first sub-array. The gate electrodes of the first field effect transistors act as the gate electrodes of the second field effect transistors.
摘要翻译：由场效应晶体管的第一和第二子阵列组成的堆叠IGFET器件的只读存储器阵列。第一场效应晶体管的第一子阵列形成在衬底中。第一场效应晶体管器件中的每一个都响应于多晶硅栅电极。第二场效应晶体管的第二子阵列形成在覆盖在第一子阵列上的激光退火多晶硅材料层中。第一场效应晶体管的栅电极用作第二场效应晶体管的栅电极。

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